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Transistor (PNP) : Unless Otherwise Noted)

This document provides specifications for a PNP transistor. It lists maximum ratings for voltage and current, then provides typical electrical characteristics including breakdown voltages, current gains, saturation voltages, and transition frequency. The transistor is marked S8S901 5502 and is complimentary to another transistor, S8050. It has a collector current of 0.5A and is packaged in an SOT-23 package.

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101 views2 pages

Transistor (PNP) : Unless Otherwise Noted)

This document provides specifications for a PNP transistor. It lists maximum ratings for voltage and current, then provides typical electrical characteristics including breakdown voltages, current gains, saturation voltages, and transition frequency. The transistor is marked S8S901 5502 and is complimentary to another transistor, S8050. It has a collector current of 0.5A and is packaged in an SOT-23 package.

Uploaded by

Stri Gunawan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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S8S901

5502

SOT-23
TRANSISTOR(PNP)
FEATURES
z Complimentary to S8050
1. BASE
z Collector current: IC=0.5A
2. EMITTER
3. COLLECTOR
MARKING : 2TY

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value Units


VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC = -100μA, IE=0 -40 V

Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V

Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V

Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 μA

Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA

Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 μA

hFE(1) VCE= -1V, IC= -50mA 120 400


DC current gain
hFE(2) VCE= -1V, IC= -500mA 50

Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V

Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V

VCE= -6V, IC= -20mA


Transition frequency fT 150 MHz
f=30MHz

CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350

１　
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５
S901
S8 550
2

２
JinYu www.htsemi.com
semiconductor

Ｄａｔｅ：２０１１／０５

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