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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC508 silicon NPN power transistor. The transistor has a TO-66 package and is intended for power switching and TV horizontal output applications. Key specifications include a collector-base breakdown voltage of 180V minimum, collector current rating of 4A, and power dissipation of 25W maximum at a case temperature of 25 degrees Celsius.

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54 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC508 silicon NPN power transistor. The transistor has a TO-66 package and is intended for power switching and TV horizontal output applications. Key specifications include a collector-base breakdown voltage of 180V minimum, collector current rating of 4A, and power dissipation of 25W maximum at a case temperature of 25 degrees Celsius.

Uploaded by

vali2daduica
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC508

DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:VCBO=180V(min)

APPLICATIONS
·For power switching and TV horizontal
output applications.

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter

3 Collector Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=? )

SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 180 V

VCEO Collector-emitter voltage Open base 60 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 4 A

PD Total power dissipation TC=25? 25 W

Tj Junction temperature 150 ?

Tstg Storage temperature -65~200 ?


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC508

CHARACTERISTICS
Tj=25? unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 60 V

V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 180 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V

VBEsat Base-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V

ICBO Collector cut-off current VCB=180V;IE=0 100 µA

IEBO Emitter cut-off current VEB=6V; IC=0 100 µA

hFE DC current gain IC=4A ; VCE=5V 20

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC508

PACKAGE OUTLINE

Fig.2 outline dimensions

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