Lab Assignment # 05: To Study The Characteristics of UJT Relaxation Oscillator
Lab Assignment # 05: To Study The Characteristics of UJT Relaxation Oscillator
Apparatus:
UJT 2N2160
Resistor Values
Capacitor C=.1 uf
Supply
CRO
Theory:
Unijunction transistor (abbreviated as UJT), also called the double-base diode is a 2-layer, 3-
terminal solid-state (silicon) switching device. The device has-a unique characteristic that when
it is triggered, its emitter current increases re generatively (due to negative resistance
characteristic) until it is restricted by emitter power supply. The low cost per unit, combined
with its unique characteristic, have warranted its use in a wide variety of applications. A few
include oscillators, pulse generators, saw-tooth generators, triggering circuits, phase control,
timing circuits, and voltage-or current-regulated supplies. The device is in general, a low-power-
absorbing device under normal operating conditions and provides tremendous aid in the
continual effort to design relatively efficient systems.
Construction of a UJT:
The basic structure of a unijunction transistor is shown in figure. It essentially consists of a
lightly-doped N-type silicon bar with a small piece of heavily doped P-type material alloyed to
its one side to produce single P-N junction. The single P-N junction accounts for the terminology
unijunction. The silicon bar, at its ends, has two ohmic contacts designated as base-1 (B 1) and
base-2 (B2), as shown and the P-type region is termed the emitter (E). The emitter junction is
usually located closer to base-2 (B 2) than base-1 (B1) so that the device is not symmetrical,
because symmetrical unit does not provide optimum electrical characteristics for most of the
applications.
The relaxation oscillator shown in figure consists of UJT and a capacitor C which is charged
through resistor RE when inter base voltage VBB is switched on. During the charging period, the
voltage across the capacitor increases exponentially until it attains the peak point voltage V P.
When the capacitor voltage attains voltage V P, the UJT switches on and the capacitor C rapidly
discharges through B1. The resulting current through the external resistor R develops a voltage
spike, as illustrated in figure and the capacitor voltage drops to the value V V. The device then
cuts off and the capacitor commences charging again. The cycle is repeated continually
generating a saw-tooth waveform across capacitor C. The resulting waveforms of capacitor
voltage VC and the voltage across resistor R (VR) are shown in figure. The frequency of the input
saw-tooth wave can be varied by varying the value of resistor R E as it controls the time constant
(T = REC) of the capacitor charging circuit. The discharge time t 2 is difficult to calculate because
the UJT is in its negative resistance region and its resistance is continually changing. However, t 2
is normally very much less than t1 and can be neglected for approximation.
The discharge of the capacitor commences at the end of charging period t 1 when the voltage
across the capacitor Vc becomes equal to VP, that is, (Ƞ VBB + VB)
VP = Ƞ VBB + VB = VBB(l-e-t/ReC)
Procedure:
CIRCUIT DIAGRAM:
Output Waveforms:
Voltage Across C1
Voltage Across R1
Conclusion:
A unijunction transistor consists of two bases (B1, B2) attached to a resistive bar of silicon, and
an emitter in the center. The E-B1 junction has negative resistance properties; it can switch
between high and low resistance. Ujt can be used for oscillators, timing circuits, and thyristor
triggering.