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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the 2SC3551 Silicon NPN Power Transistor, highlighting its features such as high voltage, high-speed switching, and reliability. It includes details on applications, pin configuration, absolute maximum ratings, thermal characteristics, and key electrical parameters. The transistor is suitable for use in switching regulators, ultrasonic generators, and general-purpose power amplifiers.

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44 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

The document provides the product specification for the 2SC3551 Silicon NPN Power Transistor, highlighting its features such as high voltage, high-speed switching, and reliability. It includes details on applications, pin configuration, absolute maximum ratings, thermal characteristics, and key electrical parameters. The transistor is suitable for use in switching regulators, ultrasonic generators, and general-purpose power amplifiers.

Uploaded by

Nguyễn Khắc Lợi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3551

DESCRIPTION
·With TO-3PN package
·High voltage ,high speed switching
·High reliability

APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers

PINNING

PIN DESCRIPTION

1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
3 Emitter

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 900 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 10 V

IC Collector current 5 A

IB Base current 3 A

PC Collector power dissipation TC=25 80 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-C Thermal resistance junction case 1.5 /W


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3551

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 10 V

VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.0 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V

ICBO Collector cut-off current VCB=900V IE=0 1.0 mA

IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA

hFE DC current gain IC=2A ; VCE=5V 10

Switching times

ton Turn-on time 1.0 µs

IC=3A; RL=100B
ts Storage time 4.0 µs
IB1=0.6A; IB2=-1.2A

tf Fall time 0.8 µs

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3551

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors


www.DataSheet4U.com
2SC3551

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