UNIT 3: PN Junction Diode and Rectifier & Filters

2 MARK QUESTIONS
1. State Ohms law and mention its limitations.
2. What is a pn junction? How is it formed?
3. Sketch the energy-band picture for
a. i} an intrinsic ii}n-type iii} a p-type semiconductor
4. Indicates the positions of the Fermi, the donor &the acceptor levels.
5. Define static and dynamic resistance of PN junction Diode
6. Define diffusion and transaction capacitance.
7. What is meant by rectifier?
8. Compare the performance measure of different filters.
9. What do you mean by potential barrier for a p-n junction?
10. Define peak inverse voltage (PIV).
11. Explain FWR working principle with circuit and waveforms.
12. What is mean by zener breakdown?
13. Explain the effect of temperature on the V-I characteristics of pn junction diode
14. What is meant by filter
15. Bridge rectifier is becoming more and more popular, why?
16. What is diode equation?
17. What is the purpose of bleeder resistance in a rectifier circuit using LC filter?
18. Write short note on Full wave rectifier (FWR) along with input output waveforms
19. What is Diffusion and Drift Currents?
20. Derive ripple factor, efficeiency,RMS current of FWR.

10 MARK QUESTIONS
1. Derive an expression for total diode current starting from Boltzmann relationship in terms of the
applied voltage.
2. Explain the operation of silicon p – n junction diode and obtain the forward bias and reverse bias
Volt – Ampere characteristics.
3. Define the following terms of a rectifier and filter:
i) Ripple Factor
ii) Regulation
iii) Rectification Efficiency
iv) Form Factor
4. Derive expressions for ripple factor of a Full Wave Rectifier with and without a capacitive filter.
5. Compute the average and RMS load currents, TUF of an unfiltered centre tapped Full Wave
Rectifier specified below.
 Input voltage to transformer = 220 V/50 Hz.
Step down ratio of centre tapped transformer = 4:1(Primary to each section secondary).
Sum of transformer secondary winding in each secondary segment and diode forward resistance =
100Ω. Load resistance, RL= 220Ω.

6. Difference between
i) Static and dynamic resistances of a p – n diode.
ii) Transition and Diffusion capacitances of a p – n diode.
iii) Volt – Ampere characteristics of a single silicon p – n diode and two identical silicon p- n diodes
connected in parallel.
iv) Avalanche and zener break down mechanisms
7. Define the following terms for a PN diode
i. Load line
ii. Difference capacitance
iii. Reverse saturation current
8. Define Ripple factor and form factor. Establish a relation between them.
9. Explain the necessity of a bleeder resistor in an L – section filter used with a Full Wave filter
10. List out the merits and demerits of Bridge type Full Wave rectifiers over centre tapped type Full
Wave rectifiers.
11. Draw the circuit of full-wave rectifier with capacitor filter. Explain its operation with necessary
equations.
12. Explain operation , working & VI characteristic of Zener Diode
13. What do you understand by depletion region at p-n junction? What is the effect of forward and
reverse biasing of p-n junction on the depletion region? Explain with necessary diagrams
14. Explain Zener and avalanche breakdown mechanisms in detail.
15. Define the following terms and derive the equations with respect to half-wave rectifier: i) Ripple
factor ii) Peak inverse voltage iii) Rectification efficiency iv) % Regulation.
16. Draw the circuit diagram of full-wave rectifier with inductor filter. Explain its operation with
necessary equations.
17. A HWR circuit supplies 100mA DC current to a 250Ω load. Find the DC output voltage, PIV
rating of a diode and the r.m.s. voltage for the transformer supplying the rectifier
18.Explain the temperature dependence of VI characteristics of PN diode.
19.Draw the circuit of full-wave rectifier with capacitor filter. Explain its operation with necessary
equations.
20. Draw the circuit of full-wave rectifier with L-section filter and derive expression for its ripple factor
 UNIT 4:BJT & Transistor configuration & H-Parameters
2 MARK QUESTIONS
1. Why Transistor is called Current Controlled Device?
2. What is early effect? How does it modify the V-I characteristics of a BJT?
3. What is meant by operating point? Explain its significance
4. What is the condition for thermal stability and thermal resistance?
5. What are the three regions of a Transistor?
6. What is thermal runway? How can it avoid?
7. What is faithful amplification?
8. How α, β and γ are related to each other?
9. Write B.J.T specifications
10. Explain how transistor acts as an Amplifier?
11. What is meant by stabilization
12. Why hybrid parameters are called so? Define those
13. What factors are to be considered for selecting the operating point Q for an amplifier?
14. Why does potential divider method of biasing become universal?
15. What is the major difference between a BJT and FET?
16. Define reverse leakage current in C.E configuration
17. Compare CB, CE and CC configurations.
18. Define the four- h parameters
19. Compare ideal and practical diodes.
20. Explain NPN transistor with near diagram

10 MARK QUESTIONS

1. With the help of input & output characteristics, explain the operation of a BJT in Common Emitter
Configuration.
2. Compare the characteristics of a BJT in CB, CE and CC configurations.
3. Explain how self biasing can be done in a BJT with relevant sketches and waveforms
4. Describe the functioning of a BJT in common base configuration.
5. How do you identify the region of operation of a BJT to be saturation region from the values of
various circuit currents?
6. Justify statement “Potential divider bias is the most commonly used biasing method” for BJT
circuits. Explain how bias compensation can be done in such biasing through diodes.
7. Define all the four hybrid parameters of a BJT in CE configuration. Draw the circuit and its
equivalent circuit.
8. Draw a fixed bias circuit and explain its operation. Calculate the Stability factor
9. Draw the low frequency hybrid equivalent circuit for C.E .C.B and CC
10. With neat sketches and necessary waveforms, explain the input and output characteristics of a BJT
in CB configuration. Also derive expression for output current.
11. With neat sketches and necessary waveforms, explain the input and output characteristics of a BJT
in CE configuration. Also derive expression for output current.
12. Explain the basic requirements of transistor biasing. Verify these requirements in collector to base
bias circuit.
13. What is thermal runaway in transistors? Obtain the condition for thermal stability in transistors.
 UNIT 5 : Junction Field Effect Transistor
2 MARK QUESTIONS
1. Explain when a FET acts as a voltage variable resistor.
2. Define the pinch off voltage (Vp) sketch the depletion region before and after pinchoff?
3. Derive Expression for saturation drain current
4. Explain the drain and transfer characteristics of a JFET in details
5. State the application of JFET
6. Draw the symbols of JFET ( N Channel/P channel ) MOSFET (Depletion MOSFET (n-
channel/p-channel)and Enhancement MOSFET (n-channel/p-channel)

10 MARK QUESTIONS
1. Detail the construction of an n-channel MOSFET of depletion type. Draw and explain its characteristics.
2. With the help of a neat schematic, explain the functioning of a common source amplifier.
3. Bring out the differences between BJT and FET. Compare the three configurations of JFET
amplifiers.

4. Differentiate between enhancement and depletion modes of a MOSFET with the help of its
characteristics and construction.
5. Establish a relation between the three JFET parameters, μ, rd and gm.
6. Explain the construction & operation of an N-channel enhancement and depletion MOSFET with
the help of static drain characteristics and transfer characteristics.
7. Define pinch-off voltage and transconductance in field effect transistors.
8. Write short notes on applications of FET as a voltage variable resistor.
9. Explain the principle of CS amplifier with the help of circuit diagram. Derive the expressions for
A , input impedance and output impedance.
V

10. Discuss the high frequency response of CD Configuration.

ii) Depletion mode. Draw the necessary diagrams and graphs.