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Re Transistor Model

The document summarizes the re transistor model and its application to three BJT amplifier configurations: common base, common emitter, and common collector. For each configuration, the summary provides the input impedance (Zi), output impedance (Zo), voltage gain (Av), current gain (Ai), and output signal phase based on the re model. It also assigns designing an re model and calculating the parameters for the common collector configuration as an assignment.

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Umar Khan
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© © All Rights Reserved
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749 views

Re Transistor Model

The document summarizes the re transistor model and its application to three BJT amplifier configurations: common base, common emitter, and common collector. For each configuration, the summary provides the input impedance (Zi), output impedance (Zo), voltage gain (Av), current gain (Ai), and output signal phase based on the re model. It also assigns designing an re model and calculating the parameters for the common collector configuration as an assignment.

Uploaded by

Umar Khan
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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re Transistor Model

1
re Transistor Model
 BJTs are basically current controlled devices, therefore the re model uses
a diode and a current source to duplicate the behavior of the transistor.
 One disadvantage to this model is its sensitivity to the DC level. This
model is designed for specific circuit conditions.
 Current controlled current source is the one in which the parameters of
the current source are controlled by a current.
 The re transistor model will be investigated for the following
three configurations of the BJT amplifiers.
i. Common Base Configuration.
ii. Common Emitter Configuration.
iii. Common Collector Configuration.

2
Common – Base Configuration
Using a PNP transistor the Common-Base configuration and the re model:

The emitter is the input and the collector is the output.


3
This model indicates: Ic = Ie
Common-Base re Model
The diode in the previously shown re model can be replaced by the resistor re.

4
Common – Base Configuration
26mV
re 
IE
• The subscript e of re was chosen to emphasize that it is the dc level of emitter
current that determines the ac level of the resistance of the diode.
• where IE is the DC current.
• Due to the isolation that exists between input and output circuits, it should be
fairly obvious that the input impedance Zi for the common-base configuration
of a transistor is simply re.
• For the common-base configuration, typical values of Zi range from a few ohms
to a maximum of about 50 .
• For the output impedance, if we set the signal to zero, then Ie= 0A and Ic=α Ie
(0 A) =0A, resulting in an open-circuit equivalence at the output terminals.
• For the common-base configuration, typical values of Zo are in the mega-ohm
range.
• The output resistance of the common-base configuration is determined by the
slope of the characteristic lines of the output characteristics.
5
• In general, for the common-base configuration the input impedance is relatively
small and the output impedance quite high.
6
Impedance in Common-Base Configuration

The re model indicates:

The input impedance (Zi) is quite small:

Zi  re
The output impedance (Zo) is quite large:

Zo  

7
Gain calculations for the Common-Base
using the re model
Voltage Gain:
RL RL
Av  
re re
Current Gain:

Ai    1
The phase relationship between input and output is 0 degrees.

8
NPN Common-Base Configuration

• The npn transistor will use the same calculation..

• The fact that the polarity of the voltage Vo as determined by the current Ic is
the same as defined (i.e., the negative side is at ground potential) reveals that
Vo and Vi are in phase for the common-base configuration. For an npn
transistor in the common-base configuration, the equivalence would appear.

9
Common-Emitter Configuration

10
Impedance in Common-Emitter Configuration

The input impedance (Zi):

Zi  re

The output impedance (Zo):

Zo  ro
Zo  

11
Gain calculations for the Common-Emitter
using the re model

RL
Av  
Voltage Gain (Av): re
Current Gain (Ai): 12
Ai  
ro  
13
ASSIGNMENT

Design a re equivalent model for common collector


configuration and also calculate its parameters i.e (Zi, Zo, Av,
Ai) and output signal phase.

14
REFERENCE
Section 7.5
Robert L. Boylestad,
Electronic Devices and Circuit Theory,
7th Edition,
Pearson Education Inc, ISBN: 81-7808-590-9.

15

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