Electronics 2
4. Metal-Oxide-Semiconductor
Field Effect Transistor (MOSFET)
Dr. Abdessattar Bouzid
Electrical Engineering Department
Faculty of Engineering & Islamic Architecture
Umm – Al Qura University
[email protected]
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 1
Chapter Outline
• The MOSFET.
• MOSFET Characteristics and Parameters.
• MOSFET Biasing.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 2
Chapter Objectives
• Explain the operation of MOSFETs.
• Discuss and apply MOSFET parameters.
• Describe and analyze MOSFET bias circuits.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 3
MOSFET
• The MOSFET (metal oxide semiconductor field-effect
transistor) is another category of field-effect transistor.
• The MOSFET, different from the JFET, has no pn junction
structure; instead, the gate of the MOSFET is insulated from the
channel by a silicon dioxide (SiO2) layer.
• The two basic types of MOSFETs are enhancement mode (E-
MOSFET) and depletion mode (D-MOSFET).
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 4
Enhancement MOSFET (E-MOSFET)
• The E-MOSFET has no structural channel.
• For an n-channel device, a positive gate voltage above a
threshold value induces a channel by creating a thin layer of
negative charges in the substrate region adjacent to the SiO2
layer.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 5
E-MOSFET Schematic Symbols
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 6
E-MOSFET Transfer Characteristic
• The E-MOSFET uses only channel enhancement. Therefore, an
n-channel device requires a positive gate-to-source voltage, and a
p-channel device requires a negative gate-to-source voltage.
• There is ideally no drain current until VGS reaches a certain
nonzero value called the threshold voltage, VGS(th).
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 7
E-MOSFET Transfer Characteristic
• The equation for the E-MOSFET transfer characteristic curve is:
I D K (VGS − VGS(th) )
2
=
• The constant K depends on the particular MOSFET and can be
determined from the datasheet by taking the specified value of ID,
called ID(on), at the given value of VGS and substituting the values
into the transfer characteristic equation.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 8
Enhancement MOSFET (E-MOSFET)
The datasheet for a 2N7002 E-MOSFET gives ID(on) = 500
mA (minimum) at VGS = 10V and VGS(th) = 1V. Determine
the drain current for VGS = 5 V.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 9
E-MOSFET Bias
• Because E-MOSFETs must have a VGS greater than the
threshold value, VGS(th), zero bias cannot be used.
• Two ways to bias an E-MOSFET: the voltage-divider bias and
the drain-feedback bias.
• In either the voltage-divider or drain-feedback bias
arrangement, the purpose is to make the gate voltage more
positive than the source by an amount exceeding VGS(th).
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 10
E-MOSFET Bias
Voltage-divider bias:
• Equations for the analysis of the
voltage-divider bias are as follows:
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 11
E-MOSFET Bias
Drain-feedback bias:
• In the drain-feedback bias circuit,
there is negligible gate current and,
therefore, no voltage drop across RG.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 12
E-MOSFET Bias
Determine VGS and VDS for the E-MOSFET circuit in the
Figure below. Assume this particular MOSFET has
minimum values of ID(on) = 200 mA at VGS = 4 V and VGS(th)
= 2 V.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 13
E-MOSFET Bias
Determine the amount of drain current in the Figure below.
The MOSFET has a VGS(th) = 3 V.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 14
Depletion MOSFET (D-MOSFET)
• The drain and source are diffused into the substrate material and
then connected by a narrow channel adjacent to the insulated
gate.
• The D-MOSFET can be operated in either of two modes, the
depletion mode or the enhancement mode.
• Since the gate is insulated from the channel, either a positive or
a negative gate voltage can be applied.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 15
Depletion MOSFET (D-MOSFET)
Depletion Mode:
• With a negative gate voltage, the
negative charges on the gate repel
conduction electrons from the
channel, leaving positive ions in
their place.
• Thereby, the n channel is depleted
of some of its electrons, thus
decreasing the channel conductivity.
• The greater the negative voltage on
the gate, the greater the depletion of
n-channel electrons.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 16
Depletion MOSFET (D-MOSFET)
Enhancement Mode:
• With a positive gate voltage, more
conduction electrons are attracted
into the channel, thus increasing
(enhancing) the channel
conductivity.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 17
D-MOSFET Schematic Symbols
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 18
D-MOSFET Transfer Characteristic
• The D-MOSFET can operate with either positive or negative
gate voltages.
• The point on the curves where VGS = 0 corresponds to IDSS.
• The point where ID = 0 corresponds to VGS(off).
2
VGS
I D ≅ I DSS 1 −
V
GS(off)
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 19
Depletion MOSFET (D-MOSFET)
For a certain D-MOSFET, IDSS = 10 mA and VGS(off) = -8 V.
(a) Is this an n-channel or a p-channel?
(b) Calculate ID at VGS = -3V.
(c) Calculate ID at VGS = 3 V.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 20
D-MOSFET Bias
• D-MOSFETs can be operated with either positive or negative
values of VGS. A simple bias method is to set VGS = 0 so that an ac
signal at the gate varies the gate-to-source voltage above and
below this 0 V bias point.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 21
D-MOSFET Bias
Determine the drain-to-source voltage in the circuit of the
Figure below. The MOSFET datasheet gives VGS(off) = -8 V
and IDSS = 12 mA.
Umm Al-Qura
Electrical Engineering Department
Faculty of Engineering and Islamic Architecture
Electronics 2 – Dr. Abdessattar Bouzid 22
