IPB06N03LA G

OptiMOS®2 Power-Transistor
Product Summary
Features
V DS 25 V
• Ideal for high-frequency dc/dc converters
R DS(on),max (SMD version) 5.9 mΩ
• Qualified according to JEDEC1) for target applications
ID 50 A
• N-channel - Logic level

• Excellent gate charge x R DS(on) product (FOM)

• Very low on-resistance R DS(on)

PG-TO263-3-2
• Superior thermal resistance

• 175 °C operating temperature

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type Package Marking

IPB06N03LA G PG-TO263-3-2 06N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C2) 50 A

T C=100 °C 50

Pulsed drain current I D,pulse T C=25 °C3) 350

Avalanche energy, single pulse E AS I D=45 A, R GS=25 Ω 225 mJ

I D=50 A, V DS=20 V,
Reverse diode dv /dt dv /dt di /dt =200 A/µs, 6 kV/µs
T j,max=175 °C

Gate source voltage4) V GS ±20 V

Power dissipation P tot T C=25 °C 83 W

Operating and storage temperature T j, T stg -55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

1)
J-STD20 and JESD22

Rev. 1.6 page 1 2006-05-10

 IPB06N03LA G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 1.8 K/W

SMD version, device on PCB R thJA minimal footprint - - 62

6 cm2 cooling area5) - - 40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1.2 1.6 2

V DS=25 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 µA
T j=25 °C

V DS=25 V, V GS=0 V,
- 10 100
T j=125 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA

V GS=4.5 V, I D=30 A,
Drain-source on-state resistance R DS(on) - 7.6 9.5 mΩ
SMD version

V GS=10 V, I D=30 A,
- 4.9 5.9
SMD version

Gate resistance RG - 1.2 - Ω

|V DS|>2|I D|R DS(on)max,

Transconductance g fs 29 58 - S
I D=30 A

2)
Current is limited by bondwire; with an
R thJC=1.8 K/W the chip is able to carry 91
3)
See figure 3
4)
T j,max=150 °C and duty cycle D <0.25 for
V GS<-5 V
5)
Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm2 (one layer, 70

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 IPB06N03LA G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss - 2093 2653 pF

V GS=0 V, V DS=15 V,
Output capacitance C oss - 800 1064
f =1 MHz
Reverse transfer capacitance Crss - 98 147

Turn-on delay time t d(on) - 11 16 ns

Rise time tr V DD=15 V, V GS=10 V, - 30 38

Turn-off delay time t d(off) I D=25 A, R G=2.7 Ω - 30 45

Fall time tf - 4.4 6.6

Gate Charge Characteristics 6)

Gate to source charge Q gs - 6.7 9.0 nC

Gate charge at threshold Q g(th) - 3.3 4.2

Gate to drain charge Q gd V DD=15 V, I D=25 A, - 4.6 6.9

Q sw V GS=0 to 5 V
Switching charge - 8.0 11

Gate charge total Qg - 17 22

Gate plateau voltage V plateau - 3.2 - V

V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 15 19 nC
V GS=0 to 5 V

Output charge Q oss V DD=15 V, V GS=0 V - 17 22

Reverse Diode

Diode continous forward current IS - - 50 A

T C=25 °C
Diode pulse current I S,pulse - - 350

V GS=0 V, I F=50 A,
Diode forward voltage V SD - 0.94 1.2 V
T j=25 °C

V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs

6)
See figure 16 for gate charge parameter definition

Rev. 1.6 page 3 2006-05-10

 IPB06N03LA G
1 Power dissipation 2 Drain current
P tot=f(T C) I D=f(T C); V GS≥10 V

90 60

80

70

60 40

50
P tot [W]

I D [A]
40

30 20

20

10

0 0
0 50 100 150 200 0 50 100 150 200
T C [°C] T C [°C]

3 Safe operating area 4 Max. transient thermal impedance

I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p)
parameter: t p parameter: D =t p/T

1000 10

1 µs

limited by on-state
resistance 0.5
10 µs 1

100 0.2

0.1
Z thJC [K/W]

100 µs
I D [A]

DC 0.05
0.1
0.02

1 ms 0.01 single pulse

10 10 ms

0.01

1 0.001
-6 -5
0.1 1 10 100 010 10
0 100-4 10-30 10-20 10-1 0 100 1
V DS [V] t p [s]

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 IPB06N03LA G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C
parameter: V GS parameter: V GS

100 25
10 V 4.5 V 3.2 V 3.5 V 3.8 V 4.1 V
90
4.1 V 3V

80 20

70

3.8 V 15

R DS(on) [mΩ]
60
I D [A]

50

40 3.5 V 10
4.5 V

30

3.2 V
20 5 10 V

3V
10
2.8 V

0 0
0 1 2 3 0 20 40 60 80 100
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
parameter: T j

100 100

90 90

80 80

70 70

60 60
g fs [S]
I D [A]

50 50

40 40

30 30

20 20
175 °C
10 25 °C 10

0 0
0 1 2 3 4 5 0 20 40 60 80
V GS [V] I D [A]

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 IPB06N03LA G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS
parameter: I D

12 2.5

11

10
2
9

8 400 µA

98 %
R DS(on) [mΩ]

7 1.5

V GS(th) [V]
40 µA
6 typ

5
1
4

3
0.5
2

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

11 Typ. Capacitances 12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD)
parameter: T j

10000 1000

25 °C

Ciss

Coss
1000 100
175 °C 175°C 98%
C [pF]

I F [A]

Crss
100 10
25°C 98%

10 1
0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0
V DS [V] V SD [V]

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 IPB06N03LA G
13 Avalanche characteristics 14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed

parameter: Tj(start) parameter: V DD

100 12

15 V
25 °C
10
100 °C 5V 20 V
150 °C

V GS [V]
I AV [A]

10 6

1 0
1 10 100 1000 0 10 20 30 40
t AV [µs] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

29
V GS
28
Qg

27

26
V BR(DSS) [V]

25

24
V g s(th)

23

22

Q g(th) Q sw Q g ate
21

Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [°C]

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 IPB06N03LA G

Package Outline PG-TO263-3-2

PG-TO263-3-2: Outline

Footprint Packaging

Rev. 1.6 page 8 2006-05-10

 IPB06N03LA G

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.

Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Rev. 1.6 page 9 2006-05-10