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2SC1096 NPN Transistor Specifications

This document provides product specifications for the SavantIC Semiconductor 2SC1096 silicon NPN power transistor. It has a TO-202 package, is intended for audio frequency power amplification and low speed switching up to 3-5 watts. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 3A, and transition frequency of 65MHz. It is suitable for output stages in car audio systems.

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108 views3 pages

2SC1096 NPN Transistor Specifications

This document provides product specifications for the SavantIC Semiconductor 2SC1096 silicon NPN power transistor. It has a TO-202 package, is intended for audio frequency power amplification and low speed switching up to 3-5 watts. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 3A, and transition frequency of 65MHz. It is suitable for output stages in car audio systems.

Uploaded by

ade abang
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1096

DESCRIPTION
·With TO-202 package
·Low breakdown voltage
·High current
·High fT

APPLICATIONS
·For audio frequency power amplifier
and low speed switching applications
·Suitable for output stages of 3 to 5 watts
car radio sets and car stereo

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-202) and symbol
3 Emitter

Absolute maximum ratings (Ta=25? )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 40 V

VCEO Collector-emitter voltage Open base 30 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 3 A

ICM Collector current-peak 6 A

IB Base current 0.6 A

Ta=25? 1.2
PC Collector power dissipation W
TC=25? 10

Tj Junction temperature 150 ?

Tstg Storage temperature -55~150 ?


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1096

CHARACTERISTICS
Tj=25? unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V

VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 30 V

ICBO Collector cut-off current VCB=30V;IE=0 1.0 µA

IEBO Emitter cut-off current VEB=3V; IC=0 1.0 µA

hFE-1 DC current gain IC=20mA ; VCE=5V 20

hFE-2 DC current gain IC=1.0A ; VCE=5V 40 250

COB Output capacitance IE=0; VCB=10V;f=1.0MHz 55 pF

fT Transition frequency IC=0.1A ; VCE=5V 65 MHz

u hFE-1 classifications
N M L K

40-60 50-100 80-160 120-250

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1096

PACKAGE OUTLINE

Fig.2 outline dimensions

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