VDRM = 4500 V Asymmetric Gate turn-off

ITGQM = 4000 A
ITSM = 25×103 A
Thyristor
VT0 = 2.1 V 5SGA 40L4501
rT = 0.58 mΩ
VDclink = 2800 V
Doc. No. 5SYA1208-02 March 05

• Patented free-floating silicon technology

• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating

Blocking
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state VDRM VGR ≥ 2 V 4500 V
voltage
Repetitive peak reverse VRRM 17 V
voltage
Permanent DC voltage for VDC-link Ambient cosmic radiation at sea level 2800 V
100 FIT failure rate in open air.
Characteristic values
Parameter Symbol Conditions min typ max Unit
Repetitive peak off-state IDRM VD = VDRM, VGR ≥ 2 V 100 mA
current
Repetitive peak reverse IRRM VR = VRRM, RGK = ∞ Ω 50 mA
current

Mechanical data
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H 25.6 26.1 mm
Weight m 1.5 kg
Surface creepage distance Ds Anode to Gate 33 mm
Air strike distance Da Anode to Gate 14 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur

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 5SGA 40L4501
GTO Data
On-state
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Max. average on-state IT(AV)M Half sine wave, TC = 85 °C 1000 A
current
Max. RMS on-state current IT(RMS) 1570 A
3
Max. peak non-repetitive ITSM tp = 10 ms, Tvj = 125°C, sine wave 25×10 A
surge current After Surge: VD = VR = 0 V
6
Limiting load integral I2t 3.1×10 A2s
3
Max. peak non-repetitive ITSM tp = 1 ms, Tvj = 125°C, sine wave 40×10 A
surge current After Surge: VD = VR = 0 V
3
Limiting load integral I2t 800×10 A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT IT = 4000 A, Tvj = 125°C 4.4 V
Threshold voltage V(T0) Tvj = 125°C 2.1 V
Slope resistance rT IT = 400...5000 A 0.58 mΩ
Holding current IH Tvj = 25°C 100 A

Turn-on switching
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on- diT/dtcr 500 A/µs
Tvj = 125°C, f = 200 Hz
state current
IT = 4000 A, IGM = 50 A,
Critical rate of rise of on- diT/dtcr diG/dt = 40 A/µs 1000 A/µs
f = 1 Hz
state current
Min. on-time ton VD = 0.5 VDRM, Tvj = 125 °C 100 µs
IT = 4000 A, di/dt = 300 A/µs,
IGM = 50 A, diG/dt = 40 A/µs,
CS = 6 µF, RS = 5 Ω
Characteristic values
Parameter Symbol Conditions min typ max Unit
Turn-on delay time td VD = 0.5 VDRM, Tvj = 125 °C 2.5 µs
Rise time tr IT = 4000 A, di/dt = 300 A/µs, 5 µs
IGM = 50 A, diG/dt = 40 A/µs,
Turn-on energy per pulse Eon CS = 6 µF, RS = 5 Ω 3.3 J

Turn-off switching
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Max. controllable turn-off ITGQM VDM ≤ VDRM, diGQ/dt = 40 A/µs, 4000 A
current CS = 6 µF, LS ≤ 0.3 µH
Min. off-time toff VD = 0.5 VDRM, Tvj = 125 °C 100 µs
VDM ≤ VDRM, diGQ/dt = 40 A/µs,
ITGQ = ITGQM,
RS = 5 Ω, CS = 6 µF, LS = 0.3 µH
Characteristic values
Parameter Symbol Conditions min typ max Unit
Storage time tS VD = 0.5 VDRM, Tvj = 125 °C 27 µs
Fall time tf VDM ≤ VDRM, diGQ/dt = 40 A/µs, 3 µs
ITGQ = ITGQM,
Turn-on energy per pulse Eoff RS = 5 Ω, CS = 6 µF, LS = 0.3 µH 14 J
Peak turn-off gate current IGQM 1100 A

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Doc. No. 5SYA1208-02 March 05 page 2 of 9
 5SGA 40L4501

Gate
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Repetetive peak reverse VGRM 17 V
voltage
Repetetive peak reverse IGRM 50 mA
VGR = VGRM
current
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage VGT Tvj = 25°C, 1.2 V
Gate trigger current IGT VD = 24 V, RA = 0.1 Ω 4 A

Thermal
1)
Maximum rated values
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj -40 125 °C
Storage temperature range Tstg -40 125 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction to case Rth(j-c) Double side cooled 11 K/kW
Rth(j-c)A Anode side cooled 20 K/kW
Rth(j-c)C Cathode side cooled 25 K/kW
Thermal resistance case to heatsink Rth(c-h) Single side cooled 6 K/kW
(Double side cooled) Rth(c-h) Double side cooled 3 K/kW

Analytical function for transient thermal

impedance:

n
Zth(j - c)(t) = ∑ Ri(1 - e - t/τ i )
i =1
i 1 2 3 4
Ri(K/kW) 7.313 1.974 1.218 0.501
τi(s) 0.5400 0.0939 0.0117 0.0036

Fig. 1 Transient thermal impedance, junction to case

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Doc. No. 5SYA1208-02 March 05 page 3 of 9
 5SGA 40L4501

Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs.

average on-state current

Fig. 4 Surge current and fusing integral vs. pulse

width

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Doc. No. 5SYA1208-02 March 05 page 4 of 9
 5SGA 40L4501

Fig. 5 Forward blocking voltage vs. gate-cathode Fig. 6 Static dv/dt capability; forward blocking
resistance voltage vs. neg. gate voltage or gate cathode
resistance

Fig. 7 Forward gate current vs. forard gate voltage Fig. 8 Gate trigger current vs. junction temperature

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Doc. No. 5SYA1208-02 March 05 page 5 of 9
 5SGA 40L4501

Fig. 9 Turn-on energy per pulse vs. on-state current Fig. 10 Turn-on energy per pulse vs. on-state current
and turn-on voltage and current rise rate

Common Test conditions:

diG/dt = 40 A/µs
CS = 6 µF
RS =5Ω
Tj = 125 °C

Definition of Turn-on energy:

20 µ s
E on = ∫V
0
D ⋅ ITdt (t = 0, IG = 0.1 ⋅ IGM )

Definition of Turn-off energy:

40 µ s

E off = ∫V
0
D ⋅ ITdt ( t = 0, IT = 0.9 ⋅ ITGQ )

Fig. 11 Turn-on energy per pulse vs. on-state current

and turn-on voltage

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Doc. No. 5SYA1208-02 March 05 page 6 of 9
 5SGA 40L4501

Eoff [J] QGQa [A] Eoff [J]

18 18000 14
Conditions: Conditions:
16 VD = ½⋅VDRM 16000 VD = ½ VDRM , VDM = VDRM
12
di GQ/dt = 40 A/ µs diGQ /dt =40 A/µs
14 CS = 6 µF, R S = 5 Ω VDM = VDRM 14000 RS = 5 Ω CS = 6µF
Tj = 125°C 10 T j = 125 °C
12 12000

10 10000 8

8 ¾ VDRM 8000 6
6 6000
QGQa ½ VDRM 4
4 4000
2
2 2000

0 0 0
0 500 1000 1500 2000 2500 3000 3500 4000 0 500 1000 1500 2000 2500 3000 3500 4000
ITGQ [A] ITGQ [A]

Fig. 12 Turn-off energy per pulse vs. turn-off current Fig. 13 Turn-off energy per pulse vs. turn-off current
and peak turn-off voltage, extracted gate and snubber capacitance
charge vs. turn-off current

C s [µF] Eoff [J],ts [µs] IGQM [A]

6 22 55 1100
Condition: IGQM
20 50 1000
VD = ½⋅VDRM , VDM = VDRM
5 diGQ /dt = 40 A/µs 18 45 900
RS = 5 Ω, LS ≤ 300 nH 16 40 800
14 35 700
4
Eoff
12 30 600
10 25 500
3
8 20 tS 400
6 15 300
2 Condition: VD = ½ VDRM , VDM = VDRM
4 10 200
ITGQ = 4000 A, diGQ /dt = 40 A/µs
2 5 Tj = 125 °C 100
1
0 0 0
1000 1500 2000 2500 3000 3500 4000
-10 0 10 202530 40 50 60 707580 90 100 110 120
125
IGQM [A] Tj [°C]

Fig. 14 Required snubber capacitor vs. max Fig. 15 Turn-off energy per pulse, storage time and
allowable turn-off current peak turn-off gate current vs. junction
temperature

ts [s] IGQM [A] ts [s] IGQM [A]

60 1200 60 1200
55
IGQM
50 1000 50 1000
IGQM
45
40 800 40 800
35
30
tS 600 30 600
tS
25
20 400 20 400
15 Conditions:
Conditions:
10 ITGQ = 3000 A 200 10 200
diGQ/dt =40 A/µs
5 T j = 125 °C
T j = 125 °C
0 0 0 0
0 10 20 30 40 50 60 0 500 1000 1500 2000 2500 3000 3500 4000
diGQ /dt [A/µs] ITGQ [A]

Fig. 16 Storage time and peak turn-off gate current Fig. 17 Storage time and peak turn-off gate current
vs. neg. gate current rise rate vs. turn-off current

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Doc. No. 5SYA1208-02 March 05 page 7 of 9
 5SGA 40L4501

Fig. 18 General current and voltage waveforms with GTO-specific symbols

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Doc. No. 5SYA1208-02 March 05 page 8 of 9
 5SGA 40L4501

Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise

Reverse avalanche capability

In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR =
10… 15 V.

Related documents:
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2046 Cosmic Ray
5SZK 9104 Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory
5SZK 9105 Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact
factory
Please refer to http://www.abb.com/semiconductors for actual versions.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1208-02 March 05

Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306
Email [email protected]
Internet www.abb.com/semiconductors