HWL30YRA
L-Band GaAs Power FET
Autumn 2002 V1
Features Outline Dimensions
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Typical 16.5 dB Gain
• 5V to 10V Operation
Description
The HWL30YRA is a Medium Power GaAs FET
designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS Drain to Source Voltage +15V
VGS Gate to Source Voltage -5V
ID Drain Current IDSS RA Package (Ceramic)
IG Gate Current 3 mA
TCH Channel Temperature 175°C
TSTG Storage Temperature -65 to +175°C
*
PT Power Dissipation 6W
* mounted on an infinite heat sink.
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol Parameters & Conditions Units Min. Typ. Max.
IDSS Saturated Current at VDS=3V, VGS=0V mA 500 600 900
VP Pinch-off Voltage at VDS=3V, ID=30mA V -3.5 -2.0 -1.5
gm Transconductance at VDS=3V, ID=300mA mS - 300 -
Rth Thermal Resistance °C/W - 15 25
P1dB Power Output at Test Points dBm 30 31 -
VDS=10V, ID=0.5IDSS
G1dB Gain at 1dB Compression Point dB 15 16.5 -
VDS=10V, ID=0.5IDSS
PAE Power-Added Efficiency (POUT = P1dB) % 35 45 -
VDS=10V, ID=0.5IDSS
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRA
L-Band Power GaAs FET
Autumn 2002 V1
Typical Performance at 25°°C
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm) PAE (%)
40 60
50
30 Po
40
Gain
20 30 Eff
Gain 20
10
10
0 0
0 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm) PAE (%)
40 60
50
30 Po
40
Gain
20 30 Eff
Gain 20
10
10
0 0
0 5 10 15 20 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRA
L-Band Power GaAs FET
Autumn 2002 V1
Power Derating Curve
7
Total Power Dissipation,PT (W) 6
(25,6)
1
(175,0)
0
0 50 100 150 200
Case Temperature,TC (℃)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
HWL30YRA
L-Band Power GaAs FET
Autumn 2002 V1
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5IDSS
(GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG
0.5 0.889 -90.882 10.672 121.778 0.015 37.028 0.185 -85.008
0.6 0.880 -101.517 9.739 114.753 0.016 33.933 0.202 -90.976
0.7 0.898 -111.715 8.957 107.828 0.018 25.758 0.221 -96.978
0.8 0.887 -119.853 8.230 101.908 0.019 22.178 0.236 -101.966
0.9 0.892 -127.305 7.598 95.905 0.020 17.975 0.257 -107.921
1.0 0.899 -133.797 7.057 90.171 0.021 13.021 0.277 -111.564
1.1 0.895 -139.819 6.556 85.468 0.021 11.448 0.289 -114.434
1.2 0.898 -145.143 6.121 80.722 0.020 6.972 0.305 -117.853
1.3 0.900 -149.874 5.719 76.230 0.022 1.280 0.320 -119.915
1.4 0.901 -154.299 5.402 71.953 0.021 -0.177 0.333 -122.220
1.5 0.902 -158.403 5.083 67.875 0.022 -4.225 0.351 -124.725
1.6 0.901 -162.158 4.805 63.682 0.022 -5.998 0.363 -126.712
1.7 0.901 -165.838 4.561 59.797 0.021 -8.293 0.373 -128.530
1.8 0.902 -169.285 4.335 56.201 0.023 -12.529 0.385 -130.724
1.9 0.904 -172.511 4.138 52.683 0.022 -13.387 0.398 -133.037
2.0 0.903 -175.577 3.952 49.148 0.022 -16.242 0.407 -134.993
2.1 0.900 -178.634 3.787 45.369 0.022 -17.751 0.419 -136.790
2.2 0.895 178.286 3.628 41.830 0.022 -20.360 0.429 -138.518
2.3 0.901 175.281 3.489 38.489 0.022 -20.631 0.441 -141.024
2.4 0.900 172.423 3.366 35.215 0.022 -24.775 0.449 -143.021
2.5 0.898 169.702 3.240 31.933 0.021 -26.487 0.460 -144.842
2.6 0.897 166.614 3.122 28.419 0.021 -27.431 0.465 -146.932
2.7 0.891 163.692 3.012 24.887 0.021 -29.193 0.472 -148.847
2.8 0.891 160.887 2.917 21.710 0.022 -30.270 0.480 -151.545
2.9 0.892 158.151 2.826 18.353 0.021 -33.867 0.490 -153.496
3.0 0.889 154.976 2.728 14.989 0.021 -34.591 0.495 -155.778
3.1 0.886 152.192 2.639 11.818 0.021 -36.992 0.499 -158.293
3.2 0.891 149.216 2.570 8.229 0.021 -39.301 0.509 -160.827
3.3 0.886 146.548 2.482 5.061 0.021 -41.369 0.513 -163.193
3.4 0.888 143.721 2.408 1.817 0.021 -43.313 0.520 -165.544
3.5 0.888 141.215 2.334 -1.350 0.021 -44.600 0.529 -168.143
3.6 0.885 138.428 2.261 -4.672 0.020 -46.532 0.534 -170.993
3.7 0.887 136.197 2.198 -7.464 0.021 -45.714 0.543 -172.808
3.8 0.880 133.751 2.128 -10.759 0.020 -48.349 0.547 -176.029
3.9 0.885 131.629 2.072 -13.887 0.020 -48.967 0.555 -178.609
4.0 0.882 129.363 2.012 -16.900 0.019 -50.990 0.562 178.634
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
