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Silicon NPN Power Transistor 2SD551: Description

This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

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167 views2 pages

Silicon NPN Power Transistor 2SD551: Description

This document provides information on the ISC 2SD551 silicon NPN power transistor. It has a collector-emitter breakdown voltage of 150V minimum and is intended for use in audio power amplifier applications such as output stages for 80W amplifiers. Key specifications include a continuous collector current of 12A, collector power dissipation of 100W, and DC current gain of 40-140.

Uploaded by

Ondalis Lobayna
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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isc Silicon NPN Power Transistor 2SD551

DESCRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Complement to Type 2SB681
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·For AF power amplifier applications.
·Recommended for use in output stage of 80 watts power
amplifier .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 150 V

VCEO Collector-Emitter Voltage 150 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 12 A

IE Emitter Current-Continuous 12 A

Collector Power Dissipation


PC 100 W
@TC=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature -65~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SD551

ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.5 V

VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V

ICBO Collector Cutoff Current VCB= 100V; IE= 0 0.1 mA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA

hFE DC Current Gain IC= 1A ; VCE= 5V 40 140

fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 15 MHz

COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 250 pF

 hFE Classifications

R O

40-80 70-140

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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