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VLSI Design Assignment Problems

The document provides instructions and constants for solving problems related to VLSI design. It includes 5 problems assessing understanding of MOSFET threshold voltage, drain current, and mode of operation. Constants are provided for permittivity, temperature, work functions, intrinsic carrier concentration, and other parameters. Units and conversions are specified. Problems cover MOS capacitors, NMOS and PMOS transistors, and calculating drain current under various bias conditions.

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Bhavani Bhagyasree
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169 views2 pages

VLSI Design Assignment Problems

The document provides instructions and constants for solving problems related to VLSI design. It includes 5 problems assessing understanding of MOSFET threshold voltage, drain current, and mode of operation. Constants are provided for permittivity, temperature, work functions, intrinsic carrier concentration, and other parameters. Units and conversions are specified. Problems cover MOS capacitors, NMOS and PMOS transistors, and calculating drain current under various bias conditions.

Uploaded by

Bhavani Bhagyasree
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EEPC24 VLSI DESIGN

Assignment problems

Please use the following data/hints for solving the problems :

1. If the unit of any parameter/constant is expressed in metre, convert it into centimetre while
substituting in the formula.
2. Value of constants : Permittivity of SiO2 is εox = 3.9 x 8.854 x 10-14 F/cm.
Permittivity of silicon is εsi = 11.9 x 8.854 x 10-14 F/cm.
Note that the values 3.9 and 11.9 are the dielectric constant of SiO2 and Si respectively.
These values are multiplied by the permittivity of vacuum to get the actual permittivity of the
respective material.
3. Temperature is to be expressed in kelvin for solving problems. Consider room temperature
for all the below problems. So T = 300 K.
4. Other constants are : Boltzmann constant k = 1.38 x 10-23 J/K; work function of aluminium
metal Φm = 4.1 V; (qΦm would be 4.1 eV); electron affinity of silicon χ = 4.05 V; (qχ would
be 4.05 eV). Intrinsic concentration of silicon ni = 1.5 x 1010 cm-3;
5. Please express the drain current in µA, so that it is easy to verify the answer.
6. Please memorize the value of the above constants as it will not be given during exams.

Problems : (total – 20 marks)

(1) (a) Assuming that the flatband voltage (VFB) is zero, find the threshold voltage for a MOS
capacitor with substrate doping concentration NA = 1016 cm-3 and gate oxide thickness tox =
100 nm. (2 marks)

(b) If the above MOS capacitor has aluminium metal gate, find the threshold voltage
considering the difference in metal-semiconductor workfunction. (2 marks)

(c) Repeat the same for MOS capacitor with n+ polysilicon gate instead of aluminium gate. (2
marks)

(d) Repeat the same with p+ polysilicon gate. (2 marks)

(2). Assume N-MOSFET structure is created using the MOS capacitor mentioned in 1(a).
Find the threshold voltage of NMOS for (i) VSB = 0 V (ii) VSB = 2 V. (3 marks)

(3) An n-channel MOSFET has the following specifications : channel width = 5 µm, channel
length = 1 µm, gate oxide thickness = 50 nm, electron mobility = 800 cm2/V.s, threshold
voltage = 1 V. Find the drain current flowing through the device for V GS = 2 V, VDS = 0.5 V.
(3 marks)
(4) Determine the mode of operation (saturation, linear or cutoff) and drain current of NMOS
with VGS = 2.5 V, VDS = 2.5 V (i) without CLM (ii) with CLM. What is your inference on the
current magnitude. Use the following tranistor data : βn = 115 µA/V2, VTn = 0.43 V, λ = 0.06
V-1. (4 marks)

(5) Find the drain current of PMOS for VGS = -2.5 V, VDS = -1.8 V. Use the following
transistor data : βp = 30 µA/V2, VTp = -0.4 V, λ = -0.1 V-1. (2 marks)

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