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Assignment 3 Solution

This document contains the solutions to 11 questions regarding BJT and MOSFET circuit analysis. The key results are: - Question 3.1 calculates a collector current of 384.6 μA for a given BJT circuit. - Question 3.7 calculates the input resistance of a MOSFET circuit as 12.5 kΩ. - Question 3.11 calculates the gain bandwidth product of a BJT as 3846 Hz.

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Yogendra Singh Rajpoot
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67 views4 pages

Assignment 3 Solution

This document contains the solutions to 11 questions regarding BJT and MOSFET circuit analysis. The key results are: - Question 3.1 calculates a collector current of 384.6 μA for a given BJT circuit. - Question 3.7 calculates the input resistance of a MOSFET circuit as 12.5 kΩ. - Question 3.11 calculates the gain bandwidth product of a BJT as 3846 Hz.

Uploaded by

Yogendra Singh Rajpoot
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Assignment -3 Solutions

(Q 3.1)
Ans: c) 384.6 µA
IC βIB 100×10µ
transconductance, gm = = =
VT VT 26m

1
⇒ gm = A/V
26

∴ ⃒ ic ⃒ = gm.vin
1
ic = × 10m = 384.615 µA ≈ 384.6 µA
26

(Q 3.2)

Ans: a) 2.6 kΩ
β 100
rп = = = 2.6 kΩ
gm 1/26

(Q 3.3)
Ans: b) 0.47 V
1
|𝑣𝑜𝑢𝑡 | = gm Rc ∙ vin = (4.7k) × 2.6m = 0.47 V
26

(Q 3.4)
Ans: d) 158

1 Ic 100 106
go = = ⇒ ro = = Ω
r0 VA 100(13µ) 13

β β ∙VT VT 26m
rп = = = = = 2 kΩ
gm IC IB 13µ
IC βIB 100 ×13µ
gm = = = = 50mS
VT VT 26m

vout = – (r0 ⫽ 3.3k) gm vbe


𝑉𝑜𝑢𝑡 106
⃒ ⃒ =[ ⫽ 3.3k](50m) = 158.21 ≈ 158
𝑉𝑏 13

(Q 3.5)
Ans: d) 1.054 V
106
|𝑣𝑜𝑢𝑡 | = [ ⫽ 3.3k](50m) vb
13

106 rп
=[ ⫽ 3.3k] (50m) [ ] ×vin
13 rп +1k

106 2k
=[ ⫽ 3.3k] × 50m × [ ] ×10m
13 2k+1k

∴ |𝒗𝒐𝒖𝒕 |= 1.054 V

(Q 3.6)
Ans: b) 1.2

Assume, MOS is in saturation,


KW 2 1m
ISD = (VSG − |Vthp |) = (6 – 3 – 1)2 = 2mA
2 L 2

VSD = 6 – 2 = 4 ≥ [VSG – |Vthp |] ⇒ So, MOS is in saturation region as we assumed.


KW
∴ gm = [VSG – |Vthp |] = 1m × (6 – 3 – 1) = 2 m℧
L

7.5k
vout = (– gmvgs) = – 2 vgs = – 2 vin ( )
7.5k+5k

𝐯𝐨𝐮𝐭
∴ |Av| = | | = 1.2
𝐯𝐢𝐧
(Q 3.7)

Ans: c) 12.5 kΩ

⇒ vtest = 5k (itest) + 7.5k (itest)


𝐯𝐭𝐞𝐬𝐭
⇒ Rin = = 12.5 kΩ
𝐢𝐭𝐞𝐬𝐭

(Q 3.8)
Ans: e) (7 V, 1 mA)
15k
VG = 10 ( ) = 3V
15k+35k

Assume, MOS is operating in saturation region,


kW VS
IDS = (VGS – Vthn)2 =
2 L 1kΩ

2m VS
⇒ (3 – VS – 1)2 =
2 1k

⇒ (2 – VS)2 = VS

⇒ 4 + VS2 – 4VS – VS = 0

⇒ 4(1 – VS) – VS (1 – VS) = 0

⇒ VS = 1 or 4 ⇒ VS = 1V
𝐕𝐒
∴ IDSQ = = 1mA
𝟏𝐊

VD = Vdd – 2k (IDSQ) = 10 – 2 = 8V
i. e, VD ≥ VG – Vthn ⇒ MOSFET is operating in saturation region as we assumed.

∴ VDSQ = VD – VS = 8 – 1 = 7V
(Q 3.9)
Ans: b) (2.53 V, 2 mA)

Apply the KVL in outer loop, we have

10.7 = 2k (IC + IB) + 45k IB + 0.7 + 2k (IC + IB)


IC IC
⇒ 10 = 4k (IC + ) + 45k ( )
49 49

⇒ 10 = (4k) IC + (1k) IC = 5k IC

∴ ICQ = 2mA

VC = 10.7 ‒ 2k (IC + IB)


IC
= 10.7 ‒ (2k) IC ‒ (2k)
49

= 6.7 ‒ 0.0816

∴ VC = 6.618 V
IC
And also, VE = 2k (IC + IB) = (2k) IC + (2k) = 4.0816 V
49

∴ VCE = VC – VE = 2.5367 V ≈ 2.53 V

(Q 3.10)
Ans: a) 637 Ω
β VT 26m
rп = = = = 637Ω
gm IB 2 m/49

(Q 3.11)

Ans: e) 3846
IC 2m 1
gm = = = A/V
VT 26m 13

VA 100
ro = = = 50kΩ
IC 2m

50k
∴ g m ∙ ro = = 3846.15 ≈ 3846
13

******************* THE END *********************

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