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Isc 2SD2253: Silicon NPN Power Transistor

The 2SD2253 is a silicon NPN power transistor designed for color TV horizontal output applications. It has a high breakdown voltage of 1700V, high switching speed, and low saturation voltage of 5V. It also has a built-in damper diode and minimum lot-to-lot variations for robust and reliable performance. The transistor has absolute maximum ratings including a collector-emitter voltage of 600V, collector current of 12A pulses and 6A continuous, and junction temperature of 150°C.

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Francisco Meza Benavidez
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41 views2 pages

Isc 2SD2253: Silicon NPN Power Transistor

The 2SD2253 is a silicon NPN power transistor designed for color TV horizontal output applications. It has a high breakdown voltage of 1700V, high switching speed, and low saturation voltage of 5V. It also has a built-in damper diode and minimum lot-to-lot variations for robust and reliable performance. The transistor has absolute maximum ratings including a collector-emitter voltage of 600V, collector current of 12A pulses and 6A continuous, and junction temperature of 150°C.

Uploaded by

Francisco Meza Benavidez
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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isc Silicon NPN Power Transistor 2SD2253

DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for color TV horizontal output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1700 V

VCEO Collector-Emitter Voltage 600 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current- Continuous 6 A

ICP Collector Current- Pulse 12 A

IB Base Current- Continuous 3 A

Collector Power Dissipation


PC 50 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


isc Silicon NPN Power Transistor 2SD2253

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V

ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 μA

IEBO Emitter Cutoff Current VEB= 5V; IC= 0 66 200 mA

hFE DC Current Gain IC= 1A ; VCE= 5V 8 28

VECF C-E Diode Forward Voltage IF= 5A 2.0 V

fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz

COB Output Capacitance IE= 0 ; VCB= 10V;ftest=1.0MHz 250 pF

Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.

isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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