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NCE20TD60B

600V, 20A, Trench FS II Fast IGBT

General Description:
Using NCE's proprietary trench design and advanced FS (Field Stop) second
generation technology, the 600V Trench FSII IGBT offers superior conduction and
switching performances, and easy parallel operation;

Features
⚫ Trench FSII Technology Offering
⚫ Very low VCE(sat)
⚫ High speed switching
⚫ Positive temperature coefficient in VCE(sat)
⚫ Very tight parameter distribution
⚫ High ruggedness, temperature stable behavior
Schematic diagram

Application
⚫ Air Condition
⚫ Inverters
⚫ Motor drives

Package Marking and Ordering Information

Device Device Package Device Marking
NCE20TD60B TO-220 NCE20TD60B

TO-220
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 600 V
VGES Gate- Emitter Voltage ±30 V
Collector Current 40 A
IC
Collector Current @TC = 100 °C 20 A
ICplus Pulsed Collector Current，tp limited by Tjmax 60 A
- turn off safe operating area，VCE=600V，Tj=150°C 60 A
IF Diode Continuous Forward Current @TC = 100 °C 20 A
IFM Diode Maximum Forward Current 60 A
Power Dissipation @ TC = 25°C 135 W
PD
Power Dissipation @TC = 100 °C 67.5 W
TJ,Tstg Operating Junction and Storage Temperature Range -55 to +175 °C
TL Maximum Temperature for Soldering 260 °C
Short circuit withstand time VGE=15V, VCC≤400V,
tsc Allowed number of short circuits<1000Time between 5 us
short circuits:≥1.0s,Tj≤150°C

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NCE20TD60B
Thermal Characteristic
Symbol Parameter Value Units
RθJC Thermal Resistance, Junction to case for IGBT 1.11 °C/W
RθJC Thermal Resistance, Junction to case for Diode 1.92 °C/W
RθJA Thermal Resistance, Junction to Ambient 62 °C/W

Electrical Characteristics (TC=25°C unless otherwise noted)

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
Static Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage VGE=0V,ICE=1mA 600 -- -- V
ICES Collector-Emitter Leakage Current VGE =0V,VCE=600V -- -- 4 uA
IGES(F) Gate to Emitter Forward Leakage VGE=+30V,VCE=0V -- -- 100 nA
IGES(R) Gate to Source Reverse Leakage VGE=-30V,VCE =0V -- -- 100 nA
IC=20A Tj=25°C -- 1.7 1.9 V
VCE(sat) Collector-Emitter Saturation Voltage
VGE=15V Tj=100°C -- 1.9 -- V
VGE(th) Gate Threshold Voltage IC=1mA,VCE=VGE 4.0 -- 6.0 V
Dynamic Characteristics
Cies Input Capacitance -- 2580 --
VCE=25V,VGE=0V,
Coes Output Capacitance -- 48 -- pF
f=1MHz
Cres Reverse Transfer Capacitance -- 26 --
Qg Total Gate Charge -- 97 --
VCC=480V, IC=20A
Qge Gate to Emitter Charge -- 17 -- nC
VGE=15V
Qgc Gate to Collector Charge -- 37 --
Short circuit collector current Max.1000
VGE=15V,VCC≤400V,
IC(SC) short circuits Time between short circuits: -- 130 -- A
tSC≤5us,Tj≤150°C
≥1.0s
Switching Characteristics
td(ON) Turn-on Delay Time -- 18 --
tr Rise Time -- 16 --
ns
td(OFF) Turn-Off Delay Time VCC=400V,IC=10A -- 164 --
tf Fall Time VGE=0/15V, Rg=25Ω -- 15 --
Eon Turn-On Switching Loss Inductive Load -- 0.43 --
Eoff Turn-Off Switching Loss -- 0.17 -- mJ
Ets Total Switching Loss -- 0.60 --

Electrical Characteristics of the Diode(TC= 25°C unless otherwise specified)：

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VFM Diode Forward Voltage IF=20A -- 1.45 1.7 V
Trr Reverse Recovery Time -- 182 -- ns
IRRM Diode Peak Reverse Recovery Current IF=20A, di/dt=200A/us -- 5.3 -- A
Qrr Reverse Recovery Charge -- 0.5 -- uC
Pulse width ttp≤380µs,δ≤2%

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NCE20TD60B
Test Circuit
1) Gate Charge Test Circuit 2) Switch Time Test Circuit

Switching characteristics
1) Definition of switching times 2) Definition of switching losses

3) Definition of diode switching characteristics

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NCE20TD60B

Typical Electrical and Thermal Characteristics

Figure 1 Output Characteristics Figure 2 Transfer Characteristics

60A
VGE = 19V 60A
17V VCE = 20V
50A
15V 50A
IC, Collector Current

13V
40A

IC, Collector Current

11V 40A

30A TJ = 150℃
9V
30A
7V
25℃
20A
20A

10A
10A

0A
0V 1V 2V 3V 4V 0A
VCE, Collector-Emitter Voltage 5V 6V 7V 8V 9V 10V 11V
VGE, Gate-Emitter Voltage

Figure 3 VCEsat vs. Case Temperature Figure 4 Saturation Voltage vs. VGE
5 32
VCE, Collector-Emitter Saturation Voltage (V)
VCE, Collector-Emitter Saturation Voltage (V)

VGE=15V 28
IC=40A
4
24

20 40A
3
IC=20A
16
10A 20A
2 12

8
IC=10A
1
4

0 0
0 25 50 75 100 125 150 4 8 12 16 20 24

TJ, Junction Temperature (°C) VGE, Gate-Emitter Voltage (V)

Figure 5 Capacitance Characteristics Figure 6 Gate charge waveform

10000 15

12
VGE, Gate-Emitter Voltage (V)

1000 Ciss
VCC=480V
Capacitance (pF)

100 Coss
6

10 Crss
3

1 0
0 5 10 15 20 25 30 35 40 0 20 40 60 80 100

VCE, Collector-Emitter Voltage (V) QG, Total Gate Charge (nC)

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NCE20TD60B

Typical Electrical and Thermal Characteristics（continued）

Figure 7 Forward Characteristics Figure 8 VF vs. Temperature
120 2

100 IF=40A
1.5

VF, Forward Voltage (V)

IF, Forward Current (A)

80 20A

60 1
10A
150°C
40
25°C
0.5

20

0 0
0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175

VF, Forward Voltage (V) TJ, Junction Temperature (°C)

Figure 10 Gate-emitter Threshold Voltage as a

Figure 9 Forward Bias Safe Operating Function of Junction Temperature
area 5
100
VGE(th), Gate-emitter Threshold Voltage (V)

IC=1mA
IC, Collector Current (A)

tp=1us 4.5

10

1
3.5

3
0.1
25 50 75 100 125 150 175
1 10 100 1000

VCE, Collector-Emitter Voltage (V) TJ, Junction Temperature (°C)

Figure 11 Typical Switching Times as a Figure 12 Typical Switching Times as a

Function of Gate Resistor Function of Junction Temperature
1.0 0.7

Eoff Eoff
E, Switching Energy Losses (mJ)

Eon
E, Switching Energy Losses (mJ)

Eon 0.6
0.8 Ets Ets
0.5

0.6 0.4

0.3
0.4

0.2

0.2
0.1

0.0 0.0
0 10 20 30 40 50 25 50 75 100 125 150 175

RG, Gate Resistor (Ω) TJ, Junction Temperature (°C)

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NCE20TD60B
Typical Electrical and Thermal Characteristics（continued）

Figure 13 Power Dissipation as a

Figure 14 Current Derating
Function of Case Temperature
150 35

30
120
Ptot, Power Dissipation (W)

25

IC, Collector Current (A)

90
20

15
60

10
30
5

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150

TC, Case Temperature (°C) TC, Collector-Emitter Case Temperature (°C)

Figure 15 Typical Collector-emitter Saturation

Voltage as a function of Collector Current
3.5

VGE=15V
VCE, Collector-Emitter Voltage (V)

2.5

1.5

1
10 20 30 40 50 60

IC, Collector Current (A)

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NCE20TD60B

TO-220-3L-C Package Information

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 9.70 10.20 0.38 0.40
B 6.30 6.70 0.25 0.26
C 9.00 9.47 0.35 0.37
D 12.78 13.38 0.50 0.53
G 2.65 REF 0.104 REF
H 3.00 3.40 0.12 0.13
I 1.25 1.40 0.05 0.06
J 2.40 2.70 0.09 0.11
K 5.00 5.15 0.20 0.20
L 2.20 2.60 0.09 0.10
M 1.25 1.45 0.05 0.06
N 0.45 0.60 0.02 0.02
O 0.70 0.90 0.03 0.04
Φ 3.6 REF 0.142 REF

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NCE20TD60B
Attention:

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
■ NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
■NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
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events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
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production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
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■ Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
■ This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

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