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Schottky Rectifier Specs

This document provides information on the INCHANGE Semiconductor Schottky Barrier Rectifier MBRF2060CT. It lists the key features of the rectifier including that it uses a Schottky barrier chip, has low power loss and high efficiency. It also includes guard rings for transient protection and can operate at high temperatures. The document provides the absolute maximum ratings and thermal/electrical characteristics of the rectifier and states that its intended applications include use in high frequency rectifiers, switching mode power supplies, DC-DC converters and polarity protection.

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Manoel Bernárdez Vaccari
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64 views2 pages

Schottky Rectifier Specs

This document provides information on the INCHANGE Semiconductor Schottky Barrier Rectifier MBRF2060CT. It lists the key features of the rectifier including that it uses a Schottky barrier chip, has low power loss and high efficiency. It also includes guard rings for transient protection and can operate at high temperatures. The document provides the absolute maximum ratings and thermal/electrical characteristics of the rectifier and states that its intended applications include use in high frequency rectifiers, switching mode power supplies, DC-DC converters and polarity protection.

Uploaded by

Manoel Bernárdez Vaccari
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

Schottky Barrier Rectifier MBRF2060CT

FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VRRM Peak Repetitive Reverse Voltage


VRMS RMS Voltage 60 V
VR DC Blocking Voltage

IF(AV) Average Rectified Forward Current 20 A

Nonrepetitive Peak Surge Current


IFSM 8.3ms single half sine-wave superimposed on 150 A
rated load conditions

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc website：[Link] 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

Schottky Barrier Rectifier MBRF2060CT

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 4.0 ℃/W

ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP MAX UNIT

IF= 10A ; Tj= 25℃ 0.85

Maximum Instantaneous Forward IF=10A ; Tj= 125℃ 0.75


VF V
Voltage
IF= 20A ; Tj= 25℃ 0.95

IF= 20A ; Tj= 125℃ 0.85

VR= VRWM;Tj= 25℃ 150 uA


Maximum Instantaneous Reverse
IR
Current
VR= VRWM;Tj= 125℃ 150 mA

isc website：[Link] 2 isc & iscsemi is registered trademark

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