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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC1501 silicon NPN power transistor. It includes maximum ratings, characteristics, and applications. The 2SC1501 has a TO-126 package, is designed for medium power amplifier applications, and can dissipate up to 10W of power with a junction temperature of 150°C. Key electrical characteristics include a collector-emitter breakdown voltage of 300V, saturation voltage of 5V or less, and DC current gains ranging from 30 to 200 depending on operating currents and conditions.

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42 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides product specifications for the SavantIC Semiconductor 2SC1501 silicon NPN power transistor. It includes maximum ratings, characteristics, and applications. The 2SC1501 has a TO-126 package, is designed for medium power amplifier applications, and can dissipate up to 10W of power with a junction temperature of 150°C. Key electrical characteristics include a collector-emitter breakdown voltage of 300V, saturation voltage of 5V or less, and DC current gains ranging from 30 to 200 depending on operating currents and conditions.

Uploaded by

Stuxnet
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1501

DESCRIPTION
·With TO-126 package
·High breakdown voltage
·Large power dissipation

APPLICATIONS
·For medium power amplifier applications

PINNING

PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 300 V

VCEO Collector-emitter voltage Open base 300 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 0.1 A

ICM Collector current-peak 0.15 A

PC Collector power dissipation TC=25 10 W

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1501

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 300 V

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 300 V

V(BR)EBO Emitter-base breakdown voltage IE=100µA; IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=100mA IB=10m A 5.0 V

VBE Base-emitter on voltage IC=50mA ; VCE=10V 1.2 V

hFE-1 DC current gain IC=10mA ; VCE=10V 30

hFE-2 DC current gain IC=50mA ; VCE=10V 30 200

ICBO Collector cut-off current VCB=300V ; IE=0 100 µA

COB Output capacitance IE=0; VCB=30V;f=1MHz 8 pF

fT Transition frequency IE=20mA ; VCB=30V 55 MHz

hFE-2 classifications

P Q R S

30-60 50-100 80-150 100-200

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC1501

PACKAGE OUTLINE

Fig.2 outline dimensions

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