SEMICONDUCTOR MPSA13/14

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATIONS.

DARLINGTON TRANSISTOR.
B C

A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
D 0.45

J
MAXIMUM RATING (Ta=25ᴱ) E
F
1.00
1.27
G 0.85
CHARACTERISTIC SYMBOL RATING UNIT H 0.45
H J _ 0.50
14.00 +
Collector-Base Voltage VCBO 30 V F F K 0.55 MAX
L 2.30
Collector-Emitter Voltage VCES 30 V M 0.45 MAX
N 1.00
Emitter-Base Voltage VEBO 10 V 1 2 3

C
L

M
Collector Current IC 500 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC 625 mW 3. COLLECTOR

Junction Temperature Tj 150 ᴱ

Storage Temperature Range Tstg -55ᴕ150 ᴱ TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage VCES IC=0.1mA 30 - - V
Emitter Cut-off Current ICBO VCB=30V - - 100 nA
Emitter Cut-off Current IEBO VEB=10V - - 100 nA
MPSA13 5,000 - -
IC=10mA, VCE=5V
MPSA14 10,000 - -
DC Current Gain hFE -
MPSA13 10,000 - -
IC=100mA, VCE=5V
MPSA14 20,000 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=0.1mA - - 1.5 V
Base-Emitter Voltage VBE IC=100mA, VCE=5V - - 2.0 V
Current Gain Bandwith Product fT IC=10mA, f=100MHz, VCE=5V 125 - - MHz

2000. 2. 26 Revision No : 3 1/2

 MPSA13/14

h FE - I C f T - IC
200K 500

TRANSITION FREQUENCY f T (MHz)

VCE =5V VCE =5V
100K 300
DC CURRENT GAIN h FE

50K
30K

100

10K
50
5K
3K 30
1 3 10 30 100 300 1K 1 3 5 10 30 50 100

COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (mA)

V BE (sat), VCE (sat) - I C I C - V BE

COLLECTOR-EMITTER SATURATION

5 200
VOLTAGE VBE (sat), VCE (sat) (V)

COLLECTOR CURRENT I C (mA)

I C =1000I B VCE =5V

3 100

50
30
VBE (sat)

1 VCE (sat)
10

0.5 5
3
0.3

0.2 1
5 10 30 50 100 300 500 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)

2000. 2. 26 Revision No : 3 2/2