Lecture 4

Analysis and design of a

boost dc-dc converter
• Basic operating principles
• Steady-state analysis and waveforms
• Average model
• Design methods
 Schematic and basic operation of boost converter

Buck converter Boost converter

Vin
L L
Vin C R Vo
C R

For unidirectional
power flow iC Io +
qA D1
DTS (1-D)TS iL
1 L
A C
0 + vL _ + R
Vo Vo
vA Vin
qA + vA
S1 _
0 _

D
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 Equivalent circuits in the sub-intervals
iD DTS (1-D)TS
iC Io 1
iL D1 +
L 0
A C Vo
+ vL _ R Vo vA
+
Vin +
qA vA
_ _ 0
D S1

L +
L +
C C R
R Vo Vin Vo
Vin
_ _
• vL =Vin -Vo
• vL = Vin
• iL and energy stored in L decrease,
• iL and energy stored in L increase
energy fed to C and R
• C supports load and discharges
• iC positive and C charges up
• C large enough to maintain voltage
• C large enough to maintain voltage
almost constant (small ripple)
almost constant (small ripple)
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 Input-output voltage relationship

iC Io +
D1
iL
L
A C
+ vL _ + R Vo
Vin
qA + vA
S1 _
_

qA
DTS
v A  Vin since vL  0
(1-D)TS
1
0
v A  1 D Vo (from waveform)
vA Vo
Vo 1 Input-output
(1-D)Vo  relationship for
Vin 1 D
0
boost converter

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 Input-output voltage relationship

Ideal

Vo
Vin

With resistances of L
and MOSFET considered

D
Vo 1 • Resistances of inductor and MOSFET, and voltage
 drop across diode affect voltage conversion ratio
Vin 1 D • Effect is dominant at high D
• Difficult to achieve large conversion ratios ( > 10)
Ideal input-output
• No power transfer at D = 1
relationship
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 Boost converter waveforms
(1 − D)TS
iD qA DTS

iC Io + 1 qA = D
D1
iL t
L 0 VO
A C vA
Vin + vL _ + R Vo v A= (1 − D)Vo

qA + vA 0 t
S1 _ Vin Small ripple approximation
_ vL

D 0 Vin − Vo t
ON interval iL
Io Vin − Vo
i= I= m1 =
Vin
m2 =
(1 − D)
L in
L L
0 t
Volt-sec balance for L
By power balance:
OFF interval Vin DTs  Vin Vo 1 D Ts  0
Vin I in Vo I o
V I Vin  D  1 D   Vo 1 D 
I in  o I o  o Vo 1
Vin 1 D 
Vin 1 D
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 Boost converter waveforms
qA DTS (1 − D)TS
x
iD 1 qA = D
iC Io +
D1 0 VO t
iL vA
L
A C
_ + v A= (1 − D)Vo
Vin + vL R Vo
0 t
qA + vA vL Vin
S1 _
_
0 Vin − Vo t
D
iL
Vin Vin − Vo
Io m1 = m2 =
i= I= L L
(1 − D)
L in
0 t
Average KCL at node x iD iD = I o
iD = iC + I o = I o
0
t
KCL at node x instantaneously iC
iC= iD − I o 0 −Io t

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 Selection of L
vL Vin

0
DTS Vin-Vo
iL Iin Peak-peak ripple
Io  I L in inductor current
iL  I in 
1 D
0

•L selected to limit peak-peak

Consider the TON interval
inductor current ripple to a chosen value
 IL
• For example, 10-20% of max. Iin L  Vin Vo 1 D 
• Specifications on input current ripple DTS
• CCM considerations Vo D 1 D TS
• Choice of L does not significantly L
affect capacitor selection  IL
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 Selection of L
• Design for worst case condition VoTs / 4 L
 IL
Vo D 1 D TS
L
 IL
D
Worst case condition for constant
output voltage applications

dL  D  Vo TS
 1 2 D  0
dD  IL

 D  0.5 (or closest to 0.5 in the

operating range of D)

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 Design parameters for inductor
iL
Iin
Io  IL
iL  Iin 
1 D
0

Vo D 1 D TS I o,max

L DC bias : I in,max 
 IL 1 Dmax

 IL I L 
2
I L, peak  I in,max  I L, RMS  I in,max 
2
2 12

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 Selection of C
• Capacitor selection dictated mostly by the RMS current requirement
(which can be larger than the maximum load current)
iC Iin-Io
0 t
-Io Considering the inductor current ripple
Neglecting the inductor current ripple D 1 D I 2
2
IC ,RMS  I o 1
1 D D 12 I o2
I C , RMS  I o2 D   I in  I o  1 D 
2 2
0% Iripp le
20% Iripp le
50% Iripp le
I 1.5

substitute, I in  o I C , RMS
1 D 1
Io
D
IC ,RMS  I o
0.5

1 D 0
0 0.2 0.4 0.6
D
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 Selection of C
• Choose C based on RMS current requirement
• Worst case condition is max. load and max. D
• Verify if Vo specification is satisfied with the chosen C and ESR
iC Iin-Io
0
-Io
t

Vo due to capacitive impedance iD

D1 iC Io +
Consider the ON interval iL
A C
I o DTS L
Vo  Vin R Vo
C qA +

S1 _
ESR limit
Vo Vo D
ESR  
I Co , max I in, pk Voltage rating: Vo
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 Switch ratings
+
iL D1

Vin Vo
+
S1 _

MOSFET Diode
Voltage rating: Vo
Voltage rating: Vo
Peak current rating: Peak current rating:
I L
isw, pk  iL, pk  I in,max  I L
2 iD , pk  iL, pk  I in,max 
2
RMS current rating: Average current rating:
D iD ,avg  I o,max
isw, RMS  I in,max D  I o,max
1 D
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