POSTAL Study Package 2021 Electronics Engineering Electronic Devices and Circuits |. Topic oe Page No. 1. Semiconductor Physics 2-20 2. PN Junction and Special Diodes ~ wane see 21-38 3. Bipolar Junction Transistors (BUTS) .........ssssssssessssescsssensssnnsnnnenseen sesseeee BQ - 47 4, Field Effect Transistors (FETs) ........... 7 oe esssenassassescarsecrsorsseee 4B - BB MADE EASY met Publications Nota Ths book contains copyright sdbject matt may be reproduced, sored In [MADE EASY Publatons, New Deh. Mo pant of ths book form or by any meansst Tria a1 a2 as a4 Qs Qé A conductor carries a current of 4 A and if magnitude of charge of an electron e = 1.6 x 10" Coulomb, then the number of electrons which flow past the cross-section per second is (a) 25x 10 (c) 64x10" (b) 1.6 x 10" (2) 04x10" Long wavelength threshold for Si at room temperature is (@ 1.13mm © 1mm (b) 1.73mm, (4) 1.21mm Given that the band gap of cadmium sulphide is. 2.5 eV, the maximum photon wavelength, for electron-hole pair generation will be (@) 4968 um (b) 496 um (©) 4968A (@) 496A Doping of semiconductors is (@) the process of purifying semiconductor materials (b) the process of adding certain impurities to the semiconductor material (c) the process of converting a pure semiconductor material into some form of an active device like diode, transistor, FET etc. (d) one of the processes used in the fabrication of ICs ‘A semiconductor material with impurities added is (@) anextrinsic semiconductor (b) an intrinsic semiconductor (c) an type semiconductor (0) a Ptype semiconductor Boron and Indium are two commonly used trivalent impurities used for doping of semiconductors. Another is (a) Arsenic (b) Phosphorus (©) Aluminium, (A) none of these ase oe ircuits Semiconductor Physics 7. The conductivity of a semiconductor crystal due toany current carrier is NOT proportional to (a) mobility of the carrier (b) effective density of states in the conduction band (©) electronic charge (d)_ surface states in the semiconductor Q.8 Consider the following statements for an n-type semiconductor: 1. Donor level ionization decreases with temperature 2. Donor level ionization increases with temperature. 3. Donor level ionization in independent of temperature, 4. Donor level ionization increases as E, (donor energy) moves towards the conduction band ata given temperature. Which of these statement(s) is/are correct? (@) tonly (©) 2only (©) 2and4 (@) 3only Electron mobility and life-time in a semiconductor atroom temperature are respectively 0.36 m?/(V-s) and 340 ys. The diffusion length is (@) 3.13mm () 1.77mm (©) 355mm () 313m ag Q.10 The ratio of minority to majority diffusion coefficient D,/ D, for germanium is approximately (@ 2 (b) 05 ©3 (6) 033 Q.11 The concentration of minority carriers in an extrinsic semiconductor under equilibrium is (@) directly proportional to the doping ‘concentration (b) inversely proportional to the doping concentration (©) directly proportional to the intrin: concentration (4) inversely proportional to the intrinsic concentrationMADE EASY Electronic Devices and Circuits {Q.12 The bonding forces in compound semiconductor, such as GaAs, arises from (a) Ionic bonding (b) Metallic bonding (©) Covalent bonding (d) Combination of ionic and covalent bonding Q.13 Mobility » varies as T~” over a temperature range of 100 to 400° k. For silicon, m= __for holes. (@ 25 (b) 27 (©) 166 (@) 233 Q.14 The ratio of mobility to the diffusion coefficient in S.C. has the unit @v (b) com- V4 (©) V-om4 (@) V-sec .15 Assertion (A): Galium arsenide is a direct band semiconductor having faster switching capabilities and high temperature operating capabiliies, Reason (R): A substance for which the width of the forbidden energy region is relatively small is called a semiconductor. (@) Both A and R are true and R is the correct explanation of A. (©) Both A and R are true but Riis not the correct, explanation of A. (©) Ais true but Ris false. (@) Ais false but Ris true, Q.16 In an n-type silicon, mobility is found to be a function of electric field intensity. If electric field intensity (E) applied is in the range: R, : 500 V/cm - 883 V/cm and FR, : 500 V/cm — 8830 V/cm, then for the above ranges R, and R,, the mobility varies as (@) constant, constant (b) EV, E* ©) ELE (d) constant, EV Q.17 The intrinsic carrier concentration of siicon sample at 300 K is 1.5 x 10°%/m®. If after doping, the ‘number of majority carriers is 5 x 10%%m?, the minority carrier density is (@) 450x 10"? (b) 3.33 x 10¢/m? (©) 5.00x 102%? (d) 3.0.x 10-5/m? Q.18 Consider the following statements: Impurity diffusion is used in semiconductor to control the conductivity. The nature of the impurity profile should be such that the Objective Practice Sets | 3 1. impurity concentration decreases with diffusion depth 2. profile results in an internal electric ield 3. impurity concentration is homogeneous with no internal electric field. Which of these statements are correct? (@) 1,2and3 () 1and3. (©) 2and3 (@ 1and2 Q.19 The drift velocity of electrons in silicon varies with applied electric field in which one of the ways? {@) It monotonically increases with increasing field (b) It first increases linearly, then sub linearly increases and finally attains saturation with increasing field (c) It first increases, then decreases showing a negative differential region, again increases and finally saturates (d) The drift velocity remains unchanged with increase in field Q.20 The number of holes in an N-type silicon with intrinsic value 1.5 x 10'%/cm? and doping concentration of 10""/om®, by using mass-action lawis (@) 667x10%cc —(b) 4.44 10-5fo0 (©) 18x10%ec — d) 2.25 x 10%/ec Q.21 In degenerately doped mtype semiconductor, the Fermi evel lies in conduction band when {@) concentration of electrons in the conduction band exceeds the density of states in the valence band. (b) concentration of electrons in the valence band exceeds the density of states in the conduetion field (©) concentration of electrons in the conduction band exceeds the product of the density of states in the valence band and conduction band. (d) None of the above Q.22 A Ge sample at room temperature has intrinsic carrier concentration n, = 1.5 x 10"3 cr and is uniformly doped with acceptor of 3 x 10° cms and donor of 2.6 x 10'S cm, Then, the minority charge cartier concentration is (a) 0918 x 10% cmr3 (b) 0.818 x 10° cm? (©) 0.918 10" cmr3 (d) 0,818 x 10% cm?4 | Electronics Engineering Q.23 Assertion (A): At low temperature, the conductivity of a semiconductor increases with increase in the temperature. Reason (R): The breaking of the covalent bonds increases with increase in the temperature, generating increasing number of electrons and holes. (a) Both A and R are true and R is the correct explanation of A (b) Both A and Rare true but Ris NOT the correct explanation of A (©) Ais true but Ris false (@) Ais false but Ris true Q.24 The electrical resistivity of sodium silicate glass is 10° Gm whereas that of pure silicate glass is 107 Om. This vast difference of 12 orders of magnitude is due to which one of the following reasons? (@) The loosely-bound sodium ions in the silicate (b) The impurities in silica (c) The difference in the crystal structures (6) The presence of free electrons in the silicate Q.25 In an type Si sample, the drift velocity of electrons is 50 m/s. Then the time taken for the electrons to travel 20 um distance in the Si sample is equal to (@) 0.4ys (b) 08us (©) 2ps @) 4us Q.26 Find the maximum speed with which the photoelectrons will be emitted when the radiation of wavelength 5893 A® falls upon a caesium surface with work function of 1.8 eV. (a) 1.8 x 105 m/s () 3.27 x 105 m/s (©) 134x108 m/s (d) 3.24 105 m/s .27 An mtype semiconductor has a conductivity of 2 (Q-cm)*. If the dielectric constant of the Semiconductor is ey = 1.03 x 10-"2 Fem, then the value of dielectric relaxation time constantis equalto @ 2.06 ps (©) 1.61 ps (©) 0.10ps (6) 0.515 ps 0.28 In a degenerate semiconductor, the majority carriers are controlled by (a) Fermi-Dirac statistics (b) Maxwell-Boltzmann statistics (©) Bose-Einstein (B-E) statistics (@) Pauls exclusion principle Postal Study Package EXP] oo MADE ERsy Q.29 Consider the following statements for an n.typg ‘semiconductor: 1. Eglies below E,at a room temperature (7) 2. E,lies above Eyas T+0 3. E,= Epatsome intermediate temperature 4. E, is invariant with temperature Where E; is Fermi energy and E, is donor leva energy. Which of these statement(s) is/are corect? (@) 1and2 () 2and3 (©) 4only (@) 1,2and3 Q.30 Diffusion current of holes in S.C. is proportional to @P ap 8 oF © gp oP OF Oo Where, P= conc. of holes per unit volume. Q.31 Fermi Dirac distribution function is plotted for four different temperatures (7) as curves labelled 1104. 10] fe) os. & Match List-! with List-II and select the correct answer using the code given below the lists: List-! Ust-ll A. OK 1. Cunet B. 50K 2. Cune2 Cc. 300k 3. Cures D. 400k 4. Cuve-4 Codes: ABCD @1 23 4 &)1 3 4 2 @4 3 21 @4 123 Q.32 Along specimen of p-type semiconductor material (@) is positively charged (b) is electrically neutral (c) has an electric field directed along its length (d) acts as a dipolePublications Q.33 The conductivity of a semiconductor crystal due to any current carrier is NOT proportional to (@) mobility of the carrier (b) effective density of states in the conduction band (©) electronic charge (¢) surface states in the semiconductor Q.34 The position of the intrinsic Fermi level of an undoped semiconductor (E,) is given by Ec -Ey @ a ATO, Ne coQuaNs Fe+Ey kT Ny &) “> 2 ONG Eco+Ey kT, N, @ tinge Q.35 The probability that an electron ina metal occupies the fermi level at any temperature (> O°K). @o () 1 (©) 0s (@) 0.4 Q.36 The resistivity at room temperature of intrinsic silicon is 2.3 x 10 m and that of an n-type extrinsic silicon sample is 8.33 x 10-2 Qm. A bar of this extrinsic silicon sample is 3 mm long and has a rectangular cross-section 50 x 100mm and a steady current of 1 A exists in the bar. The voltage across the bar is found to be 50 mV. If the same bar is of intrinsic silicon, the voltage across the bar will be about (@) 1400V () 140V © 14Vv @ 14V Q.37 Match List-I (Material) with List-II (Energy Level) and select the correct answer using the code given below the lists: List-1 A. p-type semiconductor at 0° K B. Intrinsic semiconductor at 0° K temperature C. mtype semiconductor at room temperature D. ptype semiconductor at room temperature Ust-l! 1. Donor energy level is closed to the conduction band 2. Acceptor energy levelis closed to the valence band Electronic Devices and Circuits Objective Practice Sets | 5 3. Fermi-level is very closed to valence band 4. Fermi-level is halt-way between the valence band and the conduction band Codes: ABCD @123 4 ()3 4 1 2 (Cletiiqaegia, @3 21 4 Q.38 The tree electron density in a conductor is (1/1.6) x 10% cm, The electron mobility is 10 cm?/Vs. What is the value of its resistivity? (a) 104Qm (b) 16x 1027 Qm (©) 10420m (d) 10*mhoom* Q.39 Assertion (A) : The semiconductor devices like 8UTs have a maximum temperature of operation beyond which they do not function. Reason (R) : Extrinsic, p-type and n-type semiconductors behave as intrinsic beyond that temperature and the effect of doping is lost. (@) Both A and R are true and R is the correct explanation of A (b) Both A and R are true but Ris not a correct explanation of A (©) Ais true but Ris false (0) Ais false but Ris true Q.40 Consider the following statements: The conductivity of a metal has negative temperature coefficient since: 1. The electron concentration increases with temperature, 2. The electron mobility decreases with temperature. 3. The electron-lattice scattering rate increases with temperature. Which of the above statements is/are correct? (@) 1only () 1and2 (©) 2and3 (2) only Q.41 In an n-type Si sample, the concentration of electrons varies linearly from (10° to 7 x 10") cnr over a distance of 0.1 cm and diffusion coefficient of electrons is 0, = 225 cm/s. Then the electron diffusion current density is equal to (a) 108 Nom? (c) 210 Alem? (b) 110A/cm? (@) 228 Alem?6 | Electronics Engineering semiconductor B have energy band gap of 1 eV and 2 eV respectively. Except energy band gap, all other parameters are same for both the materials. The ratio of the intrinsic carrier concentrations of the two materials (i¢., ny//g) at room temperature will be (Assume that, kT = 0.026 eV at room temperature] (a) 1.25x 108 (b) 225% 108 (6) 045 x 104 (©) 08x 10% Q.43 The diffusion potential across a p-n junction (@) decreases withincreasing doping concentration (b) increases with decreasing doping concentration (c) does not depend on doping concentration (d) increases with increasing in doping ‘concentration Q.44 Consider two samples of silicon semiconductors identical in all respects except that one is uniformly doped with 10° cm? donor impurity atoms (sample A) and the other is non-uniformly doped with donors from one side Consider the following statements: 1. Sample A will not have any current at equilibrium but current will flow out of sample B. Both samples will have built-in electric field. 3. Sample A will have zero built-in electric field whereas sample B will have a constant built- in electric field, 4. No current will flow at equilibrium from either sample A or sample B. Which of these statements are correct? (@) 1and2 (b) tand3 (©) 1and4 (d) 3and4 n Q.45 Match List-! with List-II and select the correct answer using the code given below the lists: List-1 A. Thermal vollage 8. Current fow due to concentration gradient of charge carrier C. Rate of change of carrier concentration D. Electric field intensity in terms of charge density Liet-t1 Continuity equation Poisson's equation Einstein equation Diffusion equation aene eee Q.42 At room temperature, semiconductor A and Q.46 The electron concentration ina MRoE Ens, Codes: ABCoD @3 41 2 (oe) 1 4 2 3 (3 1 4 2 @O1 23 4 Sample of ung oped n-type silicon at 300k varies nen 2” 10"/em? at x = 0 at 6 x 10 fom? at x = Assume a situation that electrons are ay to keep this concentration gradient cons time, Electronic charge is 1.6 x 10-19 ang, diffusion constant O, = 35 cms. no elegy, field is present, the current density in the g « (a) zero (b) +0560 Alem? (©) +#1.120Alem® — (4) ~ 1.120 Ajome tly fr 4mm Pie tant Q.47 Consider the following statements: During an electron transition across the ener Gap in an indirect energy gap material ike siz, 1. the momentum of the electron changes 2. the direction of motion of the electron changer 3. the potential energy ofthe electron changes 4. the kinetic energy of the electron changes Which of the statements given above are correct (@ 1,2and3 (b) 2,.3and4 (©) 1,3and4 (0) 1,2and4 Q.48 Consider the following statement for an n-type Sc. 1. Erlies below E, at a room temperature 2. Eplies above E, as T+ 0, 3. E= Epat some intermediate temperature 4. Eis invariant with temperature. Correct statements are (@) 1and2 (&) 2and3 (©) 4only @ 1.2.3 Q.49 In switching devices, gold doping is used (@) Improve bonding (©) Reduce storage time (c) Increase the mobility of the carrier (0) Protect the terminals against corrosion Q.50 I in intrinsic semiconductor Germanium at 300K (27°C) the charge concentration and mobilities of {ree electrons and holes are 2.5 x 10" per CC. 3.8 x 10? cm? / v-sec and 1.8 x 10° cmiv-sec respectively, then its resistivity at 300K is (a) 230x10%cm ——(b) 100em (©) 44.6cm (&) 223mma~ve EASY @.51 Consider the following statements: 4. Current due to carrier diffusion exists in both semiconductors and metals. 2. Current due to carrier drift occurs in both semiconductors and metals. 3. The intrinsic concentration of carriers is independent of temperature. 4. Metals are unipolar while semiconductors have bipolar nature. Which of the above statements is/are correct? (@) 3and 4 only () 2and 4 only (©) 1,2and3only (4) 4only Q52 In a p-n diode, hole diffuse from p-region to mregion because (@) there is higher concentration of holes in p- region (b) holes are positively charged (©) holes are urged to move by the barrier potential (d) the free electrons in the region attract the holes Q.53 Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the (a) diffusion current (b) drift current (©) recombination current (@) induced current Q.54 Match List-I with List-II select the correct answer using the codes given below the Lists: List-! List-lI A. Driftcurrentcharge 1. Lawot conservation B. Einstein's equation 2, Electric field C. Diffusion current 3, Thermal voltage D. Continuity equation 4. Concentration gradient Codes: ABCD @2 14 3 ()4 3 2 1 @©4 1 2 3 @23 41 Q.55 Consider the following statements: If an electric field is applied to an n-type semiconductor bar, the electrons and holes move in opposite directions due to their opposite charges. The net current is Electronic Devices and Circuits Objective Practice Sets | 7 1. due to both electrons and holes with electrons as majority carriers. 2. the sum of electron and hole currents. 3. the difference between electron and hole current Which of these statements is/are correct? {a) 1alone (b) 1and2 (c) 2alone (d) Salone Q.56 Assertion (A): The transport of charges in a semiconductor may be accounted for by a mechanism called diffusion, not ordinarily encountered in metals. Reason (R): It is possible to have a non-uniform concentration of particles in a metal (@) Both A and Rare true and R is the correct explanation of A (b) Both A and R are true but Ris not the correct explanation of A. (©) Ais true but R is false. (d) Ais false but R is true. Q.57 A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with Np = 10" per cm. If the access electron concentration in the steady state is An = 10'S per cm and if, = 10 y sec (minority carrier life time) the generation rate due to irradiation (@) is 107 e-h pairsicm3/sec (b) is 10% e-h pairsicm?/sec (©) is 10° e-h parsicm*/sec (@) cannot be determined as the given data is insufficient Q.58 Ina semiconductor itis observed that three quarter of the current is carried by electrons and one quarter by holes. If at this temperature the drift speed of electrons is three times that of the holes, the ratio of electrons to holes in the semiconductor would be (@ 3 (1 ot 2 Q.59 The electron and hole concentrations in a intrinsic semiconductor a’e n, and p, respectively. When doped with a p-type material, these change ton and p, respectively. Then (@) n+p=n+p, (b) n+n,=p+p, (©) np,=n,p (d) np = np,Postal Study Package BLP4I Q.66 Which of the following statements relate to the 8 | Electronics Engineering MADE ERSY Q.60 Inahomogeneously doped n-type semiconductor bar, holes are injected at one end of the bar. How will the holes flow to the other end? {@) By drift mechanism only () By diffusion mechanism only (©) By combination of drift and diffusion mechanisms (6) By recombination mechanism Q.81 Diffusion of impurities in a serniconductoris carried out in a furnace through which a steady stream of impurity atoms is passed during the entire diffusion Hall effect ? 1. Apotential difference is developed across a current-carrying metal strip when the strip is placed in a transverse magnetic field. 2. The Hall effect is very weak in metals but is large in semiconductors. 3. The Hall effect is very weak in semiconductors but is large in metals. 4. It is applied in the measurement of the magnetic field intensity. process. What would be the type of profile of the (@ 1,2and3 (b) 2and4 impurity atoms inside the semiconductor? (© 1,3and4 (@) 1,2and4 (@) Linear (©) Gaussian Q.67 The doping concentrations on the p-side and (©) Complementary error function nside of a silicon diode are 1x10" cm and (d) Exponential 1x 10"? cnr, respectively. A forward bias of 0.3 V Q.62 fin intrinsic germanium at 300K (27°C) the charge concentration and mobilities of free electrons and holes are 2.5 x 103 per cm?, 3.8 x 10 cm?/V-sec and 1.8 x 10° cm?/V-sec respectively, then its resistivity at 300 K is (a) 230x107 Q-cm —(b) 1002-cm (0) 44.62-cm (6) 2232-cm Q.63 In a Hall effect experiment, a p-type semiconductor sample with hole concentration p, is used. The measured value of the Hall voltage is V,,. If the p-type sample is now replaced by another p-type sample with hole concentration p, where p, = 2p,, what is the new Hall voltage Vig? () iq (©) 4M, (©) (1/2) Vig, (D) (1/4) iy, Q.64 In a ptype semiconductor, p = 10'€/cm?, and hy = 400 cm?/V-s. If a magnetic field (B) of 5 x 10 Weber/cm? is applied in the x-direction, is applied to the diode. At T= 300K, the intrinsic carrier concentration of silicon n, = 1.5% 10'° cr? and KZ. 26 mv. The electron concentration at q tne edge of the depletion region on the p-side is (@) 23x 10% cms (b) 1x 10" coms (©) 1x10 cmr$ (0) 2.25 x 10% cms Q.68 In an extrinsic semiconductor, the Hall coefficient Ry (@) increases with increase of temperature (b) decreases with increase of temperature (©) isindependent of the change of temperature (d) changes with the change of magnetic field Q.69 An n-type semiconductor is illuminated by a steady flux of photons with energy greater than the band gap energy. The change in conductivity and an electric field of 2000 Vicm is applied in +y Ac obeys which relation? direction. The value of electric field caused due (@) ao=0 tothe “Hall effect” is (0) Ao=e(u,+,) An (a) -400 V/em in -z direction (0) Ao = e(u, An—p, Ap) (b) -200 Vim in +z direction (©) -200 V/cm in -z direction (6) -400 V/cm in +z direction Q.65 The hall constant in P-Si bar is given by 5 x 10° cm*/q. The hole concentration in bar is given by (@ 1x 10° fem (©) 15x 10° Jom? (b) 1.25 x 1018 fom? (d) 1.6 x 10'S fom? (d) Ao=ey,An Q.70 A four-point probe method is used to evaluate the sheet resistance of a semiconductor epitaxial layer. If @ probe current of 10 mA produces 2 voltage drop of 0.22 V between the inner probes, then the sheet resistance of the layer is (@) 1009/square —_(b) 215 Q/square (©) 572.Q/square —(d) 1000 Q/square_awauseseetete maoe EASY Q.71 Assertion (A): Hall crystal can be uses as a mutipler of two sgna’s Reason (R): Hall voltage 's proportional to the curents or voltages applied 9 perencicuiar rections across the Hall crystal (@) Bot A and R ae tue and Ris the correct explanation of A (©) Bon Aand Rare tue but Ris NOT the correct expienaion of A (© Ais tue but Ris false @ Ass false but Ris tue @.72 Asirp of copper is placed in a uniform magnetic Seid of magnitude 0.3 T. The Hall electric field is measured to be 15 x 10° Vim. Assume that n= 8x10 electrons/m? and cross-sectional area of the stip is 5 x 10% m2. Then the current in the simp is equal to (@ 110A (0) 230A (0) 320A (@) 415A Q.73 Which one of the following expressions may be used to correctly describe the temperature (7) variation of the intrinsic carrier density (n,) of a semiconductor? (2) n{T) = (AIT) exp (-E JKT?) (0) n{T) = AEyRT)® (©) n{T) = A exp (-EJ2xT) (8) n(T) = AT exp (-EJ2kT) E, is the band gap, A is pre-factor, k is Boltzmann constant. Q.74 The electrical conductivity and electron mobility for aluminium are 3.8 x 107 (ohm-m)" and 0.0012 m/V-s, respectively. What is the Hall voltage for an aluminium specimen that is 15 mm wide for a current of 25 A and a magnetic field f 0.6 Tesla (imposed in a direction perpendicular to the current) for the given value of Hall coefficient, R,,as -3.16 x 10-"" V-m/A-Tesla? (2) -316x10%V —(b) -3.16 x 107 V (9) 316x10%V (316 x 10%V Q.75 The semiconductor in a Hall experiment has magnetic field (B) = 0.5 Wb/m?, width (W) = 0.1 m, current (/) = 10 mA and Hall Coefficient (R,,) = 3.8 x 10-4 m?/C. Then the type of the semiconductor and Hall voltage are respectively (2) mtype and 1.94V (b) ptypeand 1.9 pV (©) mtypeand 19 nV (d) ptype and 19 uV Electronic Devices and Circuits Objective Practice Sets | 9 Q.76 At T= 300 K the hole mobility of a semiconductor diffusion constant D,, in cm/s is Q.77 The cut-of wavelength (in um) of fight that can be used for intrinsic excitation of a semiconductor material of bandgap E,=1.1eVis____ Q.78 Consider a silicon sample doped with No = 1x 10'/em® donor atoms. Assume that the intrinsic carrier concentration n, = 15x10"/em®. If the sample is additionally doped with N,=1x10"/em? acceptor atoms, the approximate number of electrons/cm® in the sample, at T= 300K, will be. Q.79 A silicon sample is uniformly doped with donor type impurities with a concentration of 10°/em®, ‘The electron and hole mobilities in the sample are 1200 cm?/V-s and 400 cm#/V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 x 10-8 C. The resistivity of the sample (in Q-cm) is, Q.80 A piece of silicon is doped uniformly with Mobily (em? V-t 8-4) Q.e1 phosphorous with a doping concentration of 10°9/om®. The expected value of mobility versus doping versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is 1.6 x 10-9 C. The conductivity (in Serr") ofthe silicon sample at 300K is Hole and Slectron Mobily in Siicon at 300K NETS 1E6t4 1Ee1S 1018 LES tT 1E+18 1619 1420 Doping Concentration (er3) ‘An n-type silicon sample is uniformly illuminated with light which generates 10” electron-hole pairs per cm® per second. The minority carrier lifetime in the samples 1 us. Inthe steady state, the hole concentration in the sample is approximately 10%, where x is an integer. The value of x is.10 Q.62 Q.83 Q.84 as Q.86 Q.87 Q.e8 | Electronics Engineering A de voltage of 10 V is applied across an mtype silicon bar having a rectangular cross-section and length of 1 cmas shown in figure. The donor doping concentration N, and the mobility of electrons 1, are 10° cm and 1000 cm? V-'s"', respectively. The average time (in jis) taken by the electrons to move from one end of the bar toother endis__ (| Ina degenerate semiconductor, the Fermi energy level (E,) is positioned at the edge of the conduction band (E,), at a given temperature T. At this temperature, the probability of finding an electron in a state which is located at (E, + kT) is {kis Boltzmann constant] An average hole drift velocity of 10° cm/sec results when 2 V is applied across a 1 cm long semiconductor bar. The hole mobility inside the bar is om/V-sec. In an n-type semiconductor, the thermal equilibrium electron concentration (n,) = 10'S cm-S and the intrinsic carrier concentration (n)) = 10"? crv. The mean life time of minority carriers is 1 us. The steady state excess hole concentration due to constant light illumination 's 8p = 4 x 10° crv. Under illumination, the total electron-hole recombination rate in steady state is, cmins. An intrinsic light is incident at one end of a 10 om long semiconductor sample. If 15% of the light incident on the sample is absorbed per centimeter, then the absorption coefficient of the light in the material is m. For an N-type semiconductor having doping ‘concentration = 5 x 10'9/cm? and n,= 1.5.x 10'%crn3, shift in the Fermi level with respect to the intrinsic. Fermi evel will be _ eV. [Assume kT = 0.025 eV} For a p-type semiconductor having dopant concentration = 6 x 10"7 cnr3& n,=2.5 x 10% ons, shift in Fermi level with respect to the intrinsic level in upward direction will be ev. [Assume kT = 0.026 eV] Postal Study Package PUP3] rng Engy Q.89 The equilibrium and steacy state and after illumination of es characterised by the oe ener shown in the figure below. ©” 22° al © ctor 9 a 89am, Before illumination er iain After illumination Assume that, T = 300 K, n, = 10" cms h, = 1350 cm2/V-sec, y, = 460 cmNV-see q = 1.6 x 10° C and AT = 0.026 eV. Thy Percentage increment in the conductivity of he ‘semiconductor due to illumination is Q.90 The energy gap at T= 177°C for Siif B, = 3.6 x 10“ eV/K will be equal to__ev Q.91 What will be Fermi level (in eV) in intrinsic semiconductor at T= 300 K if the value of densiy, of states in CB = 2 x 10'9/cm? while density o states in VB = 1 x 10'8/om® it is also given that the valance band is situated at 1.2 eV. Q.92 The figure below shows the doping distributionin ‘a p-type semiconductor in log scale. 108 10" paeed 1 2 Position (um) The magnitude of the electric field (in kV/om) inte semiconductor due to non uniform doping is — N, (om) a Q.93 As shown, a uniformly doped Silicon (Si) a length L = 0.1 wm with a donor oon . Np = 10°S crv is illuminated at x = 0 aoe electron and hole pairs are generated attheADE EASY a-60(1-F} OsxsL, where Gi, = 10" ems", Hole lifetime is 10 s, electronic charge q= 1.6 x 10-9, hole diffusion coefficient D, = 100 cm/s and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes toOatx= L, the magnitude of the diffusion current density at x = L/2, in Alm? is ght ADH |_Suitp= 10” am) ————— «20 L=0.4 um Q.94 The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n= 1 x 10'© crn and electronic charge q= 1.6x 10°C. fabias of Vis applied across a 1 ym region of this semiconductor, the resulting current density in this region, inkAjom?, is Drif velocity (ons) ex 10° Electric eld (Vio) GEEEEEEN semiconductor Physics 1. 10. 19. 28. 37. 46. 55. 64, 73, 82, 90. @ 2. (a) 3. (c) 4. (b) 5. (b) 11. (b) 12. (©) 13. (b) 14. (b) 20. (d) 21. (b) «22. (b) 28. @ 28.) 30. (b) 31. ©) 82, (b) 38. (c) 39. (b) 40. (c) 41. (b) 47. (c) 48. (d) 49. (b) 50. (&) 56. (©) 57. @) 58. (b) 59. @) 65. (b) 66.) «67. @) S68. @) 74, (b) 75. (d) 76. (13) TT. (100) 83. (0.27) 84. (500) 85. (500) 86. (1.048) 91. (1.627) - (a) @ @ (b) @ © () © (1.42) 78, (225.2)79. (16.25) 87. (0.318) BB. (-0.262) 92. (1.198) 93. (16) Q.96 For a semiconductor having n,= Electronic Devices and Circuits Objective Practice Sets | 11 Q.95 Consider a uniformly doped n-type silicon semiconductor, which is connected toa DC voltage source as shown in the figure below: ‘type semiconductor | | (Length = 1 cm) ns \v | Te ra 0 tom ® The doping concentration in the sample is |p = 10°6 donor atoms/om®, the intrinsic carrier concentration n, = 10"° cnr? and kTIq= 26 mV. Ec is the lowest energy level of the conduction band and E, is the Fermi energy level in the sample. The values of E,and E,at extreme points of the bar are given by, at x= 0, Eo= Eq and E,= atx tom, E,= Eg, and Ep= Ep For the given circuit arrangement of the semiconductor, the value of the difference (Eg — Ec,) will be ev. [Assume that the energy gap of silicon as 1.1 eV] 5x 10" om? and hole mobility = 500 crr?/V.sec while e~ mobility = 1300 cm?/Vsec. Then the value of minimum conductivity will be x 10-6 (Q-cm). 6. (©) 7. @) 8. (c) 9. (0) 15. (b) 16. @) 17. @) = 18. (@) 24. (bo) 25. (@) 26. (b) 27. (A) 33.) 34. ©) 35. ©) 36. (@) 42. (b) 43. @) 44. @) 45. (@) 51.) 52. @) 53. @) 54.) 60. (o) 61. (©) 62. ©) «63. (©) 69. (b) 70. (@) «71. ©) = 72. ©) . (0.52) BO. (1.92) 81. (14) 89. (134) 94. (1.6) 95. (0.81) 96. (387)12 | Electronics Engineering Enno Semiconductor Physics we Teo = 25% 10sec x 42 eV-ym Bey = 0-4968 um = 4968 A Doping is process of adding impurities to the pure ssc. Itincreases carrier concentration and therefore increases the conductivity. Ee ‘Semiconductor material with impurities is known as extrinsic semiconductor and without impurities (pure) - intrinsic. Kae Trivalen/Acceptor impurities - B, Al, Ga, In Pentavalent / donar - P, As, Sb, Bi Ew Conductivity, o = ngu, 4, : Mobility of carrier qelectron charge ‘n: effective density of states in conduction band Ele oor Donar energy level is a energy discrete energy level and | og | vet is created just below the _| L conduction band. Donar energy level [ip represents the energy level of all pentavalent atoms added to the pure se. Donar level ‘onisation Postal Study Package BIP3] mrog Eng Donar level ionisation increases with Italso increases if donar energy in Generally, E, = 0.01 eV for Ge = 0.05 eV tor si Ew temper eases L, = JO, Vy * D, = Uy Vy 0.36 x 0.025 0.36 x0.025 x 340x107 = 177mm cy) o Since |F a.constant Dep Dp Hp _ 1800 ForGe Fpai® = sop ~OS ow ‘According to mass action law np =n2 Majority carrier conc. ©. minority carrier cone, = 1 Majority carrier cone. 12. IG) The bonding in GaAs is covalent bonding. Eo ForGe: m= 1.66fore- — m=2,33fortoes Fors: m=25fore —m=2,7 or hoes Ea Einstein equation, D mie > Bed x ory DeymAapE EASY 1s. 1) * Both assertion and reason are correct statements. However, the reason for GaAsto have faster switching capability is due to its higher electron mobility (1,). The operating temperature of GaAs is higher (> 200°C) compared to Geand Si «semiconductor has the small width of the forbidden energy region i.e. around 1 eV. aa pvs Egraph: np =F _ FR _ 5x10" n 5x10” = 45x 10"/ms Ei The impurity concentration is non-homogeneous in diffusion. The diffusion hole-current density Up is proportional to the concentration gradient, and is given by dp p= Doze where 0, is called the diffusion constant for holes. A similar equation exists for diffusion electron- current density. EA» Vg we The mobility is a function of electric field intensity as given below: ifE < 108 Vicm = constant Bee if 10° < E< 10* V/cm weet if E> 10* Vem For higher fields, the carrier speed approaches the constant value of 107 cm/s. Electronic Devices and Circuits Objective Practice Sets | 13 Ew 1n, = 1.8.x 10" / cc Ny = 10" oc By mass action law, _ OP _ 2.25x 10” 2a Nore aenlO = 2.25 x 10%/cc Ea For a degenerated n type semiconductor lo for degenerated semiconductor E,-Ee= KT wo He) Ne cet No where, N; = density of states in conduction band Ny = Concentration of electrons in valance band Elo Ptype compensated semiconductor Minority carrier concentration fe (1.5x 109? = 3210 25x 10%) a-Np (3x10 -2.5x 10%) (15x10) 2.75x10"° =0.81818x 10"°/om? Ese Reason is correct explanation of assertion. ® On doping impurities in the pure semiconductor, the resistivity decreases very rapidly. Ea Given:Drift velocity, v= 50 m/sec and Length, L=20um Time taken to travel 20 um distance, L ona Ey Ex oedm?, 92180V14 | Electronics Engineering J mv? =03ev 7 0.3e\ = 3.27 x 105 m/sec Ea« 12 fs 10x17 = 0515x107 -0515ps o Ea In a doped semiconductor the majority carriers are controlled by Fermi-Dirac distribution function. Ela E; is variant with temperature. For an n-type semiconductor, the concentration of electrons in conduction band is n= Ng erfc~Eevhr where, No = effective density of states o ook =-In(nINc) or E, = Eo+ kTin(niNg) Ego Ege T. gtoaTT n, (Ego ~Ega)/24T = 2 W/2x0026 1/0052 = 2,25 x 108 ie Diffusion potential increases with increasing in doping concentration. aw At equilibrium no current flows. For uniform doped semiconductor built in EF will be zero. While non uniformly doped SC will be having constant built in EF due to concentration gradient. ie Thermal voltage - Einstein equation, 2, Pn Op ey Hn Bp Objective Practice Sets | 15 Current concn. gradient = Diffusion equation Rate of change of carrier concn. = Continuity equation Electric field intensity in terms of charge density ~ Poisson equation an v= DG 107 -6x 10'S 4-0 35 x 1.6 x 10°19 0.560 A/cm? @ During an electron transition across the energy gap in an indirect energy gap material, both momentum and energy of electron change. Ew Eo Gold doping is used to reduce storage time by introducing additional trap levels in material. | so. IC) ao FUYn + Hp) 1 = ee eee OM, 1.6x 10" x2.5x 10 x 5600 aw * Diffusion current due to concentration gradient exists only in semiconductor. Hence, ‘statement-1 is not correct. + Dritcurrent due to applied electric field occurs both in metals and semiconductors. Hence, statement-2 is correct. The intrinsic concentration of carrersis given by Af = AgT6 Fo" (T= temperature and Ay = constant) Hence, statement-3 is not correct. The current in semiconductor is due to both hole and electron flow due to which it is bipolar in nature while the current in metals is due to flow of electrons only due to which it is unipolar. Hence, statement-4 is correct.16 | Electronics Engineering Under low level injection, diffusion is there ne “= ifthe conc. of majorty camiers is far greater than the ‘Conc. of minority camiers, itis called low level injection. Einstein Equation 2 T 71600 V,: thermal voltage Continuity equation : law of conservation Diffusion current : due to existence of concentration gradient Drift current : due to electric field Exo Current carrying mechanism hth aa Iy> Ip @ ty?) In the sc, the free es will be moving in CB and contribute the current but at the same time, holes will be moving in the VB and will contribute the current, so the total current T=1,41, Ls< Since it is possible to have a non-uniform concentration of particles in a semiconductor (concentration gradient) but, not in a metal, therefore there is diffusion current in a semiconductor but, not present in a metal. Ea op a 105 at ~ 10x10* = 10” e— hpairsicm'/s Hence, the ratio of electrons to holes or: the semiconductor is unity Ex According to mass acton law. fo = for intmnsic In a SC, under thermal equilibrium, th g is always 2 constant Ei» The diffusion current is due to 2 non, concentration gradient Since the holes are neces at one end of a homogeneous ‘Semuconduce:, there will be a concentration Gradient which rests in a diffusion current. Hae Itis an complementary function. oI) o=ra(u,+u) = 25x 10% x 1.6.x 1079 (3B x 105 + 18x10 = 25x 1.6 x 10 (5.6) x 10° o= 224x105 /Q-cm 1_1¢ P= D=p5q =4460-onmADE EASY we The force acting on a charge qplaced in a magnetic field B and an electric field Eis given by F=qvxB The velocity of the hole placed in an electric field is V= Vg= HE Given, B= (Sx 10],) Wo/om? and E = (2000 j,) Viem So, F=q(u,6)xB = (400 x 2000 i, ) x (5 x 1047, ) = -qx 400 i, Viem (i) Now, F=4+qE wlll) (+q= charge on a hole) ‘Comparing equations (i) and (ii), the electric field due to the Hall effect will be ~400 V/cm in +z direction. Be Hall coefficient, 4 5x10°x1.6x1 = 1.25 x 10%/om3 Ew Hall effect: 91 1 TI TI Wy b2 b2 Metal and Neype SC Paype sc Va lEl-d BIR, and = aon Wea Hall voltage is less for metal and high for SC. Used in hall effect multiplier, Magnetofield meter. ® The electron concentration at the edge of the depletion region on the p-side is given by V; = Mey oxo| 4] Electronic Devices and Circuits Objective Practice Sets | where, No, = Ns (1.5x 10°)? 7 My. = ge = 225 10% ems We then have 03 n= 10° eres Ip = 2.25% on aS] 25 x 10* x 1.025 x 105 306 x 10° cm Ego For extrinsic semiconductor 1 Charge x Carrier concentration In extrinsic semiconductor, carrier concentration is majority carrier concentration and it is independent of temperature and thus A,, is independent of temperature. EAw When the semiconductor is illuminated by a ‘steady flux of photons, the number of new hole- electron pairs is proportional to the number of incident photons. os ‘An= Ap Therefore, change in conductivity do = c(h, +H,)AN f@ Bay For four-point method v 0.22 = 453x— = 4: ———, 7 RT = 488 X05 * R= 1002 @ Hall voltage is proportional to current and magnetic field in which specimen is placed. @ Currentin strip, = neAv, where, vis drift velocity = 5 15%10° _ 510° msec 03 2+ Current, 1= 8x 107 x 1.6 x 10°19 x5 x 10° x5 x 109 ‘ 1= 320A18 | Electronics Engineering He a (T) = AT? exp(-E,/kT) or 1,(T) = AT®exp(-E,/2kT) where A’ & Aare constants. () Given, N, = 3.8 x 107 Bim hi, = 0.0012 m?/V-sec t= 15mm 1=25A B=06T Ry = — 3.16 x 10-11 Vin/AT we have to find Vy=? Vj eae tes pt qxNpxt BxIxRy t 0.6 x25 x(-3.16 x10") 15x10 -3.16 x 10°V " @ Since, the given Hall coefficient is positive, ie, Ry = 38x 104 mC The given semiconductor is p-type. Hall voltage, = Publ _ 38x10 x0.5x10x10% y _ ,, Vy = Ee OO = 19HV 113) Py, as Dy = bp Vy = 500 x 26 x 10-9 0, = 1304s (1.12) we am = 124 en Fey” = 444 1.12um (225.2) For a compensated p-type semiconductor, the minority carrier electron concentration is given by oe (Na - Np) n, = 225x10” ~ (0% =108) Postal Study Package ELYaI) EB os 1 poo * FOR XT.Ex 10 x 1200 22cm, Ea os) As per the graph, mobility of electrons at y, concentration 10'°/cm?is 1200 cme/Vig, So, pj, = 12006mA/V-s Oy = No QP = 1098 x 1.6 x 10°19 x 1200 = 1.92 § om Ea The concentration of hole-electron par i 1 psec = 10 x 10% = 10cm? So, the power of 10 is 14. x=4 Ey (100) Electric field inside semiconductor bar, E=10V/cm Velocity of electron, V= WE= 1 x 1U* cm/sec The average time (in us) taken by the electrons io move from one end of the bar to other end is 4 < = 100psec 7 us Eg 027) The probability of finding an electron in a stat located at Eis, 48) = erat te Given that, , = E, and E= E, + kT. il —.027 SOMO = TL GRREM “Te EER (500) Drift velocity, v, = u,£= 103 cm/sec Electricfield, = ¢ = 2 viem=2 vlem Vg 108 Hole mobility, yw, = t-z: 500 cmr?/V-sec Recombination rate (R) = % Pao + 8FmADE EASY 10% - = Foret 4x 10°) om : =5x 108m Py _5x10® ee = 5x10" om s! = 500cm“/ns Ed 1525) ‘The power absorbed per centimeter length of the sample can be given by, Pram = Preenlt 6°) Foss = [4 — atte) = 0.45 Preldent ealtom) — 0.95 @ = -1n(0.85) om = 16.25 mt Ea 0318) We know that shift = «7 in No " ° S § & = e 8 = > ale Q le 5 x 10%/om? ; Ny =6 x 107/om? Shift in Fermi level in downward direction For upward direction shift = -T ina ” 6x10" “1a Bxi0 0.262 eV Ed oss) Before illumination, ny = ERENT = {03/0026 x 1010 ory = 1x 10% om? py= La _ 408 cen 7% 10' Since py << ny, Frio = MO Ay Electronic Devices and Circuits Objective Practice Sets | 19 10" x 1.6 x 10""9 x 1350 Blom 0.216 Biem Atter illumination, n= ngEFerEIAT 61031810026) 5 4610 opp = 2x10" cm? P= neErFVAT _ (0.310028) 4610 goad = 1x 10 cms Satter = My + PA, = (1.6 x 104) (2 x 1350 + 460) Blom = 0.5056 W/cm oo. OE) We know that Exe = Exoxy~ Bol T= 177°C = 177 +273 = 450K a= 1.21-3.6 x 104 x 450 E, = 1.210.162 = 1.048 eV Es 0.27 Weknow, E,= Fexfy kT ine E,=12eV Es E,+E,=12+1.11=231eV 19 g,= 124281 _0.0250,, 2x10) 2 2 1x 1078 3.51_ 0.0259 =~ sIn(20000) 1.755 —0.128 E,= 1.627 eV (1.198) —_ Nem) to" | 3224 dOsceseaeer 1 2 0.001 0.01 m(og scale) Applying the current density equation J = dou + You J=0vy Sininatol In(10"®) - in(10"*) oe Hf (2=)x10 =0 ove 3-223) 1x10 = 1198.6 V/cm 4.198 kV/em Eg no Net hole density varying in the direction of x is, Prle) = Pho + BP = Popo + Git p maa) " pat 7: -00,.2 = -00,|=S2%| 1.610"? x100x10" x10 2 = fom 0.1x10 a = 16 Alem? Egos e-< 10" Viem Slope of the curve, = y=mx 20x E=20x5 x 104 10° Viem = nev, = 1x 10" x 1.6 x 10°19 x 108 = 1.6 x 109 A/cm? = 1.6 kA/om? Postal Study Package BUy4) om mrAoe ERgy Ea 081) The energy band diagram for the give arrangement can be drawn as follows, ‘type semiconductor = | N chew, x=1em (Em~ Eos) = (Eon Eo) ~ (Ey- Eq) (Egy - Ec) is due to the applied voltage (Ec. - Ep) Is due to the doping $0, (Egy Eg,) = 1eV & (Eay-En)= ()-6ro-6) (Em-&) = re( 2) = 0.026In(105) = 0.36 ev $0, (EE) = +f Ea sn We know that for the minimum conductivity by bn nf; p=n Pe Hence, o=,b,+ dehy Ip bn = Qn) | Unf + bp, LE wns fife -oe nn = 971 [2yfPndp | Sri = 24M, Un Up pa = 2X 1,6x 10" x 1,5x 10"? V1300x50 3x1.6 10° x V5 x10? Bx 10-7 x 806 = 3.87 x 10° (Q-cm)a4 a2 a3 Q4 as The depletion region in a semiconductor p-n junction diode has (@) Electrons and holes (0) Positive and negative ions on either side (©) Neither electrons nor ions (6) Noholes If the current of Ge diode with V; = 26 mV is increased two times then increase in forward voltage drop is (@ -18.02mV (©) 36.04mv (b) 18.02mv (d) -36.04mVv Inan unbiased p-n junction, zero current implies that (@) the potential barrier has disappeared. (0) number of holes diffusing from n-side equals the number of electrons diffusing from n-side to p-side. (©) nocarrier across the junction. (@) total current crossing the junction from p-side ton-side equals the total current crossing the junction from n-side to p-side. In many commercial applications, temperatures of electronic circuits can vary from -50°C to 125°C. ‘Tomaintain a constant current in a diode over this temperature range, by how much will the diode voltage have to change? @ 11V () 0.89V (© 044 (@) 0.65V Peak Inverse Voltage (PIV) of a semiconductor diode is the (@) maximum voltage the diode can withstand in the forward biased condition (b) maximum voltage the diode can withstand in the reverse biased condition () the voltage across the diode in the reverse biased condition (4) the voltage across the diode in the forward biased condition PN Junction and Special Diodes Q.6 Refer to the diode’s V-I characteristics shown in Fig. The static resistance of the forward biased diode would be (a) (Aviai) (©) (avin) (b) (Vi) (d) (vrai) Q.7. The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of (@) log svs log V (©) Ivs log V (b) logzvs V (@ IvsV Q.8 Consider the following statements regarding the formation of P-N junctions: 1. Holes diffuse across the junction from P-side toNside. 2. The depletion layer is wiped out. 3. There is continuous flow of current across the junction. 4, Abarrier potential is set up across the junction, Which of the above statements are correct? (@) 1and3 (bo) 2and3 (©) 1and4 () 2and4 Q.9 The acresistance of a forward-biased p-njunction diode operating at a bias voltage 'V' and carrying current ‘J’ is (@) zero (©) aconstant value independent of Vand 1 v OF Vv o *i,” 3 MADE Engg Q.15 The most common commercially availaty 22 | Electronics Engin Q.10 In an abrupt p-n junction the doping tn concentrations on the p-side and n-side are diodes are made from mel N, = 10'7/em$ and Ny = 10'%/cm? respectively. (a) Silicon (©) Gallium Arsenigg The p-n junction is reverse biased and total (c) Germanium (9) any of the above depletion width is 3 um. The depletion width on the p-side is (a) 27pm (b) 0.3nm (c) 0.27 4m (d) 0.75 ym Q.11 Statement (|): The width of depletion layer of a P-N junction is increased under reverse bias. Statement (II): Junction breakdown occurs under reverse bias. (2) Both Statement | and Statement II are individually true and Statement Ilis the correct explanation of Statement | (b) Both Statement | and Statement II are individually true but Statement II is not the correct explanation of Statement | (c) Statement | is true but Statement Il is false (d) Statement | is false but Statement Il is true Q.12 The built-in potential (diffusion potential) in a p-n junction 1. is equal to the difference in the Fermi-level of the two sides, expressed in volts. 2. increases with the increase in the doping levels of the two sides. 3. increases with the increase in temperature. 4. is equal to the average of the Fermi-levels of the two sides. Which of the above statements are correct? (a) 1 and 2only (b) 1 and 3only (©) 1,2and3 (0) 2.3and4 Q.13 Depletion capacitance in a diode depends on 1. Applied junction voltage 2. Junction built-in potential 3. Current through junction 4, Doping profile across the junction Select the correct answer using the codes given below (a) 1and2 (b) tand3 (©) 1,2and4 (d) 2,3and4 Q.14 When a junction diode is used in switching applications, the forward recovery time is (@) Of the order of the reverse recovery time (©) Negligible in comparison to the reverse recovery time (©) Greater than the reverse recovery time (d) Equal to the mean carrier life time + for the excess minority carriers .16 Assertion (A): The dynamic resistance of ag, is constant. Reason (R): Dynamic resistance of a diage used for small-signal operation and is define, the reciprocal of the slope of the vott amp characteristic. e (@) Both A and R are true and R is the corey explanation of A (b) Both A and A are true but Ris not the core explanation of A. (0) Ais true but R is false. (d) Ais false but Ris true. ode Q.17 Given that Cp at forward current of 1 maig 0.8 uF. Its value for a current of 4 mA is (@) 0.8 pF () 0.2nF (c) 0.4 pF (d) 3.2pF Q.18 A Silicon PN junction diode under reverse bias has depletion region of width 10 um. The relative permittivity of Silicon, e, = 11.7 and the permittivity of free space €, = 8.85% 10-7 Fim, The depletion capacitance of the diode per square meter is (a) 100pF (b) 10 pF (©) 1pF (@) 20nF Q.19 Consider an abrupt p-n junction. Let V, be the built-in potential of this junction and V, be the applied reverse bias. If the junction capacitance (C)) is 1 pF for (Vo - V4) = 1 V then for (Vo- Vi) = 16V, C,will be (@) 16pF (b) 4pF (©) 0.25 pF () 05 pF Q.20 Consider the following statements: 1. Ina forward-biased po-n junction, the injected hole currenttin n-region is proportionalto the ttt charge Qof the injected minority carrier holes 2. Ifa p-njunction is heavily doped, breakdown voltage will reduce. 3. InaZener diode, pand nmaterials are heavl doped. 4, A Zener diode has characteristics similar° that of an ideal current source. 5. Potential barrier decreases at high temperat® Which of these statements are correct? (a) 1,2,3and5 (b) 2,4and5 (c) 1,2,4and5 (d) 2,3and5_— Al ications nae gitusion capacitance of a p-njunction diode ai the .s exponentially with forward bias (a) Increase’ voltage (0) Decreases exponentially wih forward bias voltage (c) Decrea’ (d) Increast ses linearly with forward bias voltage 1s linearly with forward bias voltage 4.20 Avalanche breakdown ina semiconductor diode ‘occurs when {@) the potential barriers reduced to zero (&) forward current exceeds a certain value (©) forward bias exceeds a certain value (@) reverse bias exceeds a certain value 1.23 For a PN junction diode, width of space charge region increases as? (@) Forward bias voltage increases (0) Reverse bias voltage increases (©) Forward bias voltage reduces (@) Reverse bias voltage reduces 0.24 AZener diode, (a) has ahigh forward voltage ratina (0) has a sharp breakdown at low reverse voltage (©) isuseful as an amplifier (@) has a negative resistance 0.25 Statement 1:Zener breakdown voltage decreases with temperature. Statement 2: The value of the avalanche voltage must increase with increased temperature. (@) If statement 1 is TRUE & statement 2 is, FALSE (0) If statement 1 is FALSE & statement 2 is TRUE (©) Both the statements are TRUE (@) Both the statements are FALSE Q.26 The junction capacitance of linearly graded PN junction varies with the applied reverse bias V, as @ v7 (b) v- @ vz" @ v2 Q.27 In a step-graded p-n junction under thermal equilibrium, the magnitude of peak electric field is 4 x 105 Vicm and the width of the depletion region on n-side is 2 um. Then the donor Concentration on m-side is equal to [Assume eg, = 1 x 10-1? F/cm] (@) 10% cms (b) 1.25 x 10" cm? (© 2x 10'%cm3 (d) 25 x 10'% cms Electronic Devices and Circuits Objective Practice Sets | 23 Q.28 In step-graded p-n junction diode, whatis the ratio of depletion-region penetration depths into pand n regions (if the ratio of acceptor to donor impurity atoms' densities is 1:2)? (a) 2:1 (© 1:2 Q.29 In a p-n junction diode, the built-in voltage Vy = 2 V, applied reverse bias voltage V,= 5 V and corresponding width of the depletion region is 7 um. Then the maximum electric field at the junction is (@) 10Vium (©) 10kV/om (b) 4:1 (1:4 (b) 20 V/um (d) 20kV/cm Q.30 Inan opto-electronic communication system, the system component in which free electrons are involved in its operation is (a) Laser (b) Optical fibre (c) Photo detector (4) Coupling device employed with the optical fibre Q.31 The dynamic resistance of a semiconductor diode in forward biased is (a) same as its static resistance (b) much larger than its static resistance (c) much smaller than its static resistance (d) typically few ohms Q.32 The temperature coefficient of the break down voltage of zener diodes in the avalanche breakdown is (@) negative (b) positive (c) near zero (d) very high Q.33 In auniformly doped GaAs junction at T= 300 K, at zero bias, only 20% of the total space charge regionis in p-region. The ratio of impurity doping concentrations Nto N, i.e, (Ng/N,) is (a) 025 (b) 05 (©) 04 4 Q.34 A breakdown that occurs in the reverse bias conditions in narrow junction diodes is (@) based on zener breakdown effect (b) based on avalanche breakdown effect (©) independent of temperature (d) avery strong function of temperature24 | Electronics Engineering Common Data For Questions 35 and 36: The current 7 in a forward biased P-N junction shown in figure (1) is entirely due to diffusion of holes fromx = Otox= L, The injected hole concentration distribution in the rregion is linear as shown in figure (2) with P(0) = 10" om? and L = 10cm. P10) Pte LH rote density x oS. 7 - Figure (1) Figure (2) Determine : Q.35 The current density in the diode assuming that the diffusion coefficient of holes is 120m?/sec. (a) 19.2 A/cm? (0) 21.8mA/cm? (©) 1.92mAlcm? ——(d)_ 2.18 mAJom? Q.36 The velocity of holes in the n-region at x = 0 (@) 12x10? cm/sec (b) 12x 10° cm/sec (©) 9x10? cm/sec (a) 9x 10° cm/sec Q.37 Atunnel diode (@) is acurrent controllable device (0) isa voltage controllable device (C) has a cut-in voltage of 0.2V (d) none of these Q.38 The light emitting diode (LED) emits light of a Particular colour because (@) Itis fabricated from a fluorescent material (©) Transition between energy levels of the carriers takes place while crossing the p-n junction (C) Heat generated in the diode is converted into light (d) The band gap of the semi-conductor material used in the fabrication of the diode is equal to the energy hv of the light photon. 2.39 In a ptn junction diode under reverse bias, the magnitude of electric field is maximum at (@) the edge of depletion region on p-side (b) the edge of depletion region on n-side (c) the p*n junction (d) the centre of the depletion region on n-side Postal Study Package BUY4l @.40 The main reason why electrons can tunnel iy Q.41 Which one of the following is not LED Q.43 The circuit in figure shows Zener-re, Q.44 Match List-! (Diode type) with List-II (Impors: — ERgy a p-njunction is that (@) barrier potential is very low (b) they have high energy (©) impurity level is low (@) depletion layer is extremely thin Matera (a) GaAs (©) GaP — () SiC (9) sio, Q.42 An LED using GaAs emits radiation in (@) Visible region (©) Ultraviolet (©) Infrared region (@) Microwave frequency region ulated 5 Power supply. The Zener-diode is ideal 1, minimum value of R, down to which th Out, voltage remains constant is 27a 2av sv SR, (@) 272 () 459 (©) 159 (@) 249 Properties) and select the correct answer u the code given below the lists: List- Zener Diode Gunn Diode Schottky Diode Tunnel Diode List-II 1. Negative resistance device fabricated us semiconductors like Si, Ga, As, Ge ete. c be operated at a frequency of 10 GHz 2. Quantum mechanical tunnelling with very depletion layers under reverse bias operat as a reference voltage sources. 3. Negative conductance device, operates on" Principle of transfer of electron from onereg° of conduction band to another. 4. Metal-semiconductor diode, have rectfcat properties. g9om>Codes: Ave oD @24 31 13 4 2 @23 41 @1 4 3 2 Q.45 Match List-I with List-ll and select the correct answer using the code given below the lists: List-1 List-II A, LED 1. Electrical isolator B, LCD 2. Forward biased C. Optocouplers 3. Light reflectors/ transmitters D. Photodiode 4. Reverse biased wos+0 42800 anano Q.46 Consider the following statements : ‘A semiconductor to be used in optoelectronic devices should have 1, direct energy band gap. 2. indirect energy band gap 3. any value of forbidden energy band gap. 4, rightvalue of band gap corresponding to light wavelength. Which of these statements is/are correct? (@) only (b) 1and4 (© 2and3 (d) 2and4 Q.47 Which of the following parameter of Si Schottky diode is higher than that of a corresponding PN junction diode (@) forward voltage drop (b) reverse recovery current (c) reverse recovery time (@) reverse leakage current Q.48 At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435, whereas a certain silicon diode requires forward bias of 0.718 V. Under the conditions Stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is @1 () 5 © 4x 103 (d) 8x 108 Electronic Devices and Circuits Objective Practice Sets | 25 Q.49 Assertion (A) : When light falls at the junction of a p-n photodiode, its P side becomes positive and Nside becomes negative. Reason (R) : When a photodiode is short- circuited, the current in the external circuit flows from the P-side to the N-side. (a) Both A and R are true and R is the correct explanation of A (b) Both A and R are true but R is not a correct explanation of A (©) Ais true but Ris false (d) Ais false but Ris true Q.50 Match List-! (Devices) with List-II (Property) and select the correct answer using the codes given below the lists List-1 List-II A, Silicon diode 1. High frequency applications B. Germanium diode 2. Very low reverse bias saturation current C. LED bias voltage 3. Low forward voltage D. PINdiode 4, Cut-off wavelenath Codes: A 6. CD Gm 1 23 G4 2) 3 Oia 1 2 4 Oe 64 1 Q.51 Consider the following statements: 1. Zener voltage Vz does not vary with temperature. 2. Regulation of the Zener diode is adversely affected at the knee current Ipimiq due to limited power dissipation capacity. 3. Ina simple Zener diode regulator circuit, amplification is not possible. Which of the above statements is/are correct? (@) tand2only —(b) Zand only (©) 3only (d) 1 and 3 only Q.52 Recognize the device represented by figure listo (@) LED (b) Optocoupler (©) Opto-NAND (d) Isolated NAND.26 | Electronics Engineering Q.53 Refer to the photodiode |-V characteristics shown in Fig, The characteristics have been divided into three regions (i) Region AB (ii) Region BC and (ii) Region CD. Name the relevant part of the Characteristics if the photodiode is being used in the photo conductive mode. A (a) Region AB (b) Region BC (©) Region ABor BC (d) Region ABor CD Q.54 Recognise the device from the circuit symbol of figure S 1 (p) Photo-transistor (d) none of these (@) Darlington (©) Photo-darlington Q.55 The advantage of ILD over LED is. (a) ILD emits incoherent light whereas LED emits coherent light (©) In ILD itis difficult to couple light whereas in LED it is easy to couple light (©) In ILD coupling loss is more whereas in LED coupling loss is less (4) ILD emits coherent light whereas LED emits incoherent light Q.56 A Zener diode has a Zener resistance of 5 Q. If the current through the Zener diode changes from 10 mA to 20 mA, the change of voltage across the Zener diode will be (a) 0.05V (co) O.1V (b) 0.075V (d) 05V Q.57 Which one of the following semiconductor junction diodes has a relatively much higher dopant concentration (@) Varactor (©) Zener diode (b) Tunnel diode (d) Schottky barrier diode Pret dite ol 2021] MADE Engy Q.58 A solar cell is (@) a thermal detector based on pyroeiq, effect = (b) a quantum detector based on pps, conductive effect - (6) a quantum detector based on Photovors, effect (d) aquantum detector based on charge, coupe concept @.59 Consider the following statements in respecte, solar cell: 1. Asolar cell is a large area p-n junction, 2. Inasolarcellthe p-njunctionis near the sy 3. Asolarcellisa photovoltaic device Which of the statements given above are corregy (@) 1,2and3 () tand2 (© 2and3 (d) tand3 Q.60 Avalanche photodiodes are preferred over py diodes in optical communication systems because of (2) speed of operation (©) higher sensitivity (©) larger bandwidth (d) larger power handling capacity Q.61 The series resistance in a solar cell contributesia which one of the following? (@) Reduction in the open circuit voltage (b) Reduction in the short circuit current densiy (©) Enhancement in the fil factor of the cell (d) Anincrease in the overall efficiency of the cel Q.62 Statement (I): Current limiting resistor is usedin series with the light emitting diode (LED) to imi current and light output. Statement (II): The light output of a light emitting diode (LED) is approximately proportional to the current passing throught (@) Both Statement (1) and Statement (I) 22 individually true and Statement (II) is correct explanation of Statement (1). (b) Both Statement (1) and Statement (|) #@ individually true but Statement (tt) is not correct explanation of Statement (!: (©) Statement (!) is true but Statement (I!) is fa (d) Statement (I) is false but Statement (I) IS?1 following statements used in respect ‘enon—Population Inversion: ot mmo population ina higher state is higher i than that ina lower state >, nis observed under thermal equilorium = inereases the rate of spontaneous emission Increases the rate of stimulated emission 4 i : Winich ofthe statements given above are correct? (@ 1,2,3and4 (b) 2and 3 only (@ tand3 only (@) 1nd 4 only The efficiency of the solar cell depends upon {@ incident ight intensity (0) the junction capacitance (©) minority carrier lifetimes (@ majority carrier lifetimes 2.64 3.65 Consider the following statements associated with various types of special diodes: 4. Thetunnel diode is widely used as a rectifier. 2. Schottky diode is a unipolar device because ‘of absence of minority carriers in reverse direction. 3. Avaractor diode is optimised for its variable capacitance. 4. AZener diode has sharp breakdown voltage at low reverse voltage. 5. PIN diodes are used at high frequencies (more than 300 MHz). Which of these statements are correct? (@) 1,2,3and5 (b) 2,3,4and5 (©) 1,3and5 (@) 2,3and4 0.66 Match List-I (Optical devices) with List-l (Electrical optical characteristics) and select the correct answer using the codes given below the lists: List-1 LASER Solar cell Photo diode LeD Lst-Il Emits monochromatic light of low intensity Consumes electrical power due to the incident light 3. Delivers power to aload 4. Emits monochromatic light of high intensity Codes: gomp> yo ABCD @4 3 4 2 3 4 2 4 ©4 3 24 3-44 6 Electronic Devices and Circuits Objective Practice Sets | 27 Q.67 Match List-l (Operating pointon the I-V characteristic) with List-II (Devices) and select the correct answer using the codes given below the lists: List-1 Ist quadrant 2nd quadrant 3rd quadrant 4th quadrant List-t1 Solar cell Photodetector with high sensitivity Photodetector with low sensitivity 4, Rectifier diode Codes: A @ 4 (b) 3 © 3 @4 3 gom> ero hoo D 1 1 2 -4nn0 2 Q.68 4 mW of 0.5 micron radiation falls on a photo detector. If the quantum efficiency is 80 percent, the number of free charge carriers (electrons) generated per second would be (a) 8x 10" (b) 8x 1076 (c) 8x 104 (d) 8x 10° Q.69 Photons of energy 1.53 x 101? Joule are incident on a photodiode which has a responsivity of 0.65 AW. If the optical power level is 10 wW, what is the photo current generated? (@) 64pA (b) 1.5 pA (c) 2.1pA (d) 6.5 pA Q.70 The following table gives the forward characteristics a7 of a Si diode. Estimate the temperature of a diode junction. (Given: In(0.2) = -1.609) UG) o6| 7 0.65 5 (@) 240K (b) 360K (c) 400K (d) 470K Ina photo diode, the width of the depletion layer Wis 1 um, generation rate of excess carriers is 10” cr sec, the diffusion length of electrons and holes are 20 um and 10 um respectively. Then the steady state photo current density of the photo diode is (a) 25.5mAlem? (©) 49.6 mA/cm? (0) 36.3 mAom? (a) 60.1 mAlom?