To all our customers

Regarding the change of names mentioned in the document, such as Mitsubishi

Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.

Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.

Renesas Technology Corp.

Customer Support Dept.
April 1, 2003
 MITSUBISHI POWER MOSFET

MIN ARY FY4AEJ-03

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Notice parame
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HIGH-SPEED SWITCHING USE
Som
Nch/Pch POWER MOSFET

FY4AEJ-03 OUTLINE DRAWING Dimensions in mm

➇ ➄

6.0
4.4
➀ ➃

1.8 MAX.
5.0

➀ ➂ SOURCE
0.4 ➁ ➃ GATE
➄ ➅ ➆ ➇ DRAIN
1.27

➆➇ ➂

➁
● 4V DRIVE
● VDSS ............................................................................... ±30V ➀ ➄➅
● rDS (ON) (MAX) ........................................................ 30/80mΩ
● ID ......................................................................................... ±4A SOP-8

APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc

MAXIMUM RATINGS (Tc = 25°C)

Ratings
Symbol Parameter Conditions Unit
n-ch p-ch
VDSS Drain-source voltage VGS = 0V 30 –30 V
VGSS Gate-source voltage VDS = 0V ±20 ±20 V
ID Drain current 4 –4 A
IDM Drain current (Pulsed) 28 –28 A
IDA Avalanche current (Pulsed) L = 10µH 4 –4 A
IS Source current 1.7 –1.7 A
ISM Source current (Pulsed) 6.8 –6.8 A
PD Maximum power dissipation 1.6 1.6 W
Tch Channel temperature –55~+150 °C
Tstg Storage temperature –55~+150 °C
— Weight Typical value 0.07 g

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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

N-ch
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V 30 — — V
IGSS Gate-source leakage current VGS = ±20V, VDS = 0V — — ±0.1 µA
IDSS Drain-source leakage current VDS = 30V, VGS = 0V — — 0.1 mA
VGS (th) Gate-source threshold voltage ID = 1mA, VDS = 10V 1.0 1.5 2.0 V
rDS (ON) Drain-source on-state resistance ID = 4A, VGS = 10V — 23 30 mΩ
rDS (ON) Drain-source on-state resistance ID = 2A, VGS = 4V — 40 55 mΩ
y fs Forward transfer admittance ID = 4A, VDS = 10V — 8 — S
Ciss Input capacitance — 550 — pF
Coss Output capacitance VDS = 10V, VGS = 0V, f = 1MHz — 220 — pF
Crss Reverse transfer capacitance — 115 — pF
td (on) Turn-on delay time — 12 — ns
tr Rise time — 20 — ns
VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 40 — ns
tf Fall time — 40 — ns
VSD Source-drain voltage IS = 1.7A, VGS = 0V — 0.75 1.10 V
Rth (ch-a) Thermal resistance Channel to ambiet — — 78.1 °C/W
trr Reverse recovery time IS = 1.7A, dis/d t = –50A/µs — 100 — ns

P-ch
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
V (BR) DSS Drain-source breakdown voltage ID = 1mA, V GS = 0V –30 — — V
IGSS Gate-source leakage current VGS = ±20V, VDS = 0V — — ±0.1 µA
IDSS Drain-source leakage current VDS = –30V, VGS = 0V — — –0.1 mA
VGS (th) Gate-source threshold voltage ID = –1mA, VDS = –10V –1.5 –2.0 –2.5 V
rDS (ON) Drain-source on-state resistance ID = –4A, V GS = –10V — 60 80 mΩ
rDS (ON) Drain-source on-state resistance ID = –2A, V GS = –4V — 115 180 mΩ
y fs Forward transfer admittance ID = –4A, V DS = –10V — 6 — S
Ciss Input capacitance — 680 — pF
Coss Output capacitance VDS = –10V, VGS = 0V, f = 1MHz — 180 — pF
Crss Reverse transfer capacitance — 90 — pF
td (on) Turn-on delay time — 10 — ns
tr Rise time — 15 — ns
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
td (off) Turn-off delay time — 50 — ns
tf Fall time — 30 — ns
VSD Source-drain voltage IS = –1.7A, VGS = 0V — –0.88 –1.20 V
Rth (ch-a) Thermal resistance Channel to ambiet — — 78.1 °C/W
trr Reverse recovery time IS = –1.7A, dis/d t = 50A/µs — 70 — ns

Aug. 1999
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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

PERFORMANCE CURVES (N-ch)

POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
2.0 5
3 tw = 10µs
POWER DISSIPATION PD (W)

2
1.6

DRAIN CURRENT ID (A)

101 100µs
7
5
3 1ms
1.2 2
100 10ms
7
0.8 5 100ms
3 TC = 25°C
2 Single Pulse
0.4
10–1
7
5 DC
0 3
0 50 100 150 200 2 3 5 7 100 2 3 5 7 101 2 3 5

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS =10V,8V,6V,5V VGS = 10V,8V,6V,5V
20 10
4V 4V

16 8
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

Tc = 25°C
12 6
Pulse Test
3V

8 4

PD = 1.6W
3V
4 2
PD = 1.6W

0 0
0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 0.3 0.4 0.5

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
1.0 100
Tc = 25°C Tc = 25°C
Pulse Test Pulse Test
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)

0.8 80
VOLTAGE VDS (ON) (V)

0.6 60
VGS = 4V

0.4 40

ID = 8A 10V
0.2 20
4A
2A
0 0
0 2 4 6 8 10 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

Aug. 1999
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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
20 102
7
5
16
DRAIN CURRENT ID (A)

ADMITTANCE yfs (S)

FORWARD TRANSFER
3
2
12

Tc = 25°C 101
VDS = 10V 7
8
Pulse Test 5 VDS =10V
Pulse Test
3
4 TC = 25°C,75°C,125°C
2

0 100 0
0 2 4 6 8 10 10 2 3 5 7 101 2 3 5 7 102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
2 2

103 102 tf
7
SWITCHING TIME (ns)

7 Ciss
Ciss, Coss, Crss (pF)

5 td(off)
5
CAPACITANCE

3
3 Coss tr
2
2
101 td(on)
102 7
Crss 5
7
5 Tch = 25°C Tch = 25°C
3
VGS = 0V VGS = 10V
2
3 f = 1MHZ VDD = 15V
RGEN = RGS = 50Ω
2 100
10–1 2 3 5 7 100 2 3 5 7 101 2 10–1 2 3 5 7 100 2 3 5 7 101

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 20
VGS = 0V
GATE-SOURCE VOLTAGE VGS (V)

Pulse Test
SOURCE CURRENT IS (A)

8 16

TC =
VDS =
6 12 125°C
15V 75°C
20V 25°C
4 8
25V

2 4
Tch = 25°C
ID =4A

0 0
0 4 8 12 16 20 0 0.4 0.8 1.2 1.6 2.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

Aug. 1999
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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 4.0
7

GATE-SOURCE THRESHOLD
5
3.2

VOLTAGE VGS (th) (V)

VDS = 10V
3
ID = 1mA
2 Pulse Test
2.4
100
7 VGS = 10V 1.6
5 ID = 4A
Pulse Test
3
0.8
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 102
7 D = 1.0
5
3 0.5
1.2
2

101 0.2
1.0 7
5 0.1

VGS = 0V 3 0.05
PDM
ID = 1mA 2
0.8 0.02
Pulse Test
100 0.01
tw
7 T
5 Single Pulse
0.6 D= tw
3 T
2

0.4 10–1 –4
–50 0 50 100 150 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Aug. 1999
 MITSUBISHI POWER MOSFET

MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

PERFORMANCE CURVES (P-ch)

POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA
tw =
2.0 –5
–3 10µs
POWER DISSIPATION PD (W)

–2
1.6

DRAIN CURRENT ID (A)

–101 100µs
–7
–5
–3 1ms
1.2
–2
–100 10ms
–7
0.8 –5 100ms
–3 TC = 25°C
–2 Single Pulse
0.4
–10–1
–7
–5 DC
0 –3
0 50 100 150 200 –2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5

CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

(TYPICAL) (TYPICAL)
VGS =–10V –8V –6V VGS = –10V,–8V,–6V,–5V
–20 –10
PD = 1.6W PD = 1.6W

–4V
–16 –8
DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

–5V

Tc = 25°C
–12 –6
Pulse Test
Tc = 25°C
–4V
Pulse Test
–8 –4

–3V

–4 –2
–3V

0 0
0 –0.4 –0.8 –1.2 –1.6 –2.0 0 –0.2 –0.4 –0.6 –0.8 –1.0

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)

ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS.

GATE-SOURCE VOLTAGE DRAIN CURRENT
(TYPICAL) (TYPICAL)
–2.0 200
Tc = 25°C VGS =–4V
Pulse Test
DRAIN-SOURCE ON-STATE

DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)

–1.6 160
VOLTAGE VDS (ON) (V)

–1.2 120
Tc = 25°C
Pulse Test
–0.8 80
ID =–8A
–10V
–0.4 40
–4A
–2A
0 0
0 –2 –4 –6 –8 –10 –10–1 –2 –3 –5 –7–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

Aug. 1999
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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

FORWARD TRANSFER ADMITTANCE

TRANSFER CHARACTERISTICS VS.DRAIN CURRENT
(TYPICAL) (TYPICAL)
–20 102
7
5
–16
DRAIN CURRENT ID (A)

ADMITTANCE yfs (S)

FORWARD TRANSFER
3
2
–12

Tc = 25°C 101
VDS = –10V 7
–8
Pulse Test 5

3 VDS = –10V
–4 Pulse Test
2
TC = 25°C 75°C 125°C
0 100 0
0 –2 –4 –6 –8 –10 –10 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102

GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)

CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
2 2

103 102
Ciss 7
td(off)
SWITCHING TIME (ns)

7
Ciss, Coss, Crss (pF)

5
5
CAPACITANCE

3 tf
3 2
Coss tr
2 td(on)
101
102 Crss 7
5
7
5 Tch = 25°C 3 Tch = 25°C
VGS = 0V VGS = –10V
2 VDD = –15V
3 f = 1MHZ
RGEN = RGS = 50Ω
2 100
–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7–101 –2 –10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7 –101

DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE SOURCE-DRAIN DIODE

VS.GATE CHARGE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
–10 –20
GATE-SOURCE VOLTAGE VGS (V)

VDS =
–10V TC =
SOURCE CURRENT IS (A)

–8 –16 125°C
–20V
75°C
–25V 25°C
–6 –12

–4 –8
VGS = 0V
Pulse Test
–2 –4
Tch = 25°C
ID = –4A

0 0
0 4 8 12 16 20 24 0 –0.4 –0.8 –1.2 –1.6 –2.0

GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V)

Aug. 1999
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MIN ARY FY4AEJ-03

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HIGH-SPEED SWITCHING USE

Som
Nch/Pch POWER MOSFET

ON-STATE RESISTANCE VS. THRESHOLD VOLTAGE VS.

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)

CHANNEL TEMPERATURE CHANNEL TEMPERATURE

(TYPICAL) (TYPICAL)
101 –4.0
7

GATE-SOURCE THRESHOLD
5
–3.2

VOLTAGE VGS (th) (V)

3 VDS = –10V
ID = –1mA
2
–2.4
100
7 VGS = –10V –1.6
5 ID = –4A
Pulse Test
3
–0.8
2

10–1 0
–50 0 50 100 150 –50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)

TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)

CHANNEL TEMPERATURE TRANSIENT THERMAL IMPEDANCE

(TYPICAL) CHARACTERISTICS
1.4 102
7 D = 1.0
5
3 0.5
1.2
2

101 0.2
1.0 7
5 0.1

VGS = 0V 3 0.05
PDM
ID = –1mA 2
0.8 0.02
100 0.01
tw
7 T
5 Single Pulse
0.6 D= tw
3 T
2

0.4 10–1 –4
–50 0 50 100 150 10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103

CHANNEL TEMPERATURE Tch (°C) PULSE WIDTH tw (s)

Aug. 1999
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