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Understand MOSFET datasheet-TaiwanSemicon 4

This document introduces the key parameters for MOSFET devices, including absolute maximum ratings like drain-source voltage, gate-source voltage, continuous and pulsed drain current. It explains that these maximum ratings define the operational limits for the device. The document then describes some of the most important parameters in more detail, such as drain-source voltage representing the maximum voltage stress between drain and source, gate-source voltage being the operating driver voltage, and continuous drain current calculated based on junction temperature, case temperature, on-resistance, and thermal resistance.

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34 views1 page

Understand MOSFET datasheet-TaiwanSemicon 4

This document introduces the key parameters for MOSFET devices, including absolute maximum ratings like drain-source voltage, gate-source voltage, continuous and pulsed drain current. It explains that these maximum ratings define the operational limits for the device. The document then describes some of the most important parameters in more detail, such as drain-source voltage representing the maximum voltage stress between drain and source, gate-source voltage being the operating driver voltage, and continuous drain current calculated based on junction temperature, case temperature, on-resistance, and thermal resistance.

Uploaded by

Cata
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Taiwan Semiconductor

MOSFET datasheet parameters introduction

Introduction
When choosing a MOSFET, parameters that are focused on by most engineers intuitively are VDS,
RDS(on), ID. However, in power systems, it is significant to pick up a suitable MOSFET based on
different applications. In this application note, Taiwan Semiconductor (TSC) introduces the definition
of every single parameter of a MOSFET, and from chapter 3, TSC also explains how each parameter is
realized, hoping this would help designers on the power projects.

1. Absolute Maximum Ratings


ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT Notes
Drain-Source Voltage VDS 30 V 1.1
Gate-Source Voltage VGS ±20 V 1.2
(Note 1) TC = 25°C 39
Continuous Drain Current ID A 1.3
TA = 25°C 11
Pulsed Drain Current IDM 156 A 1.4
(Note 2)
Single Pulse Avalanche Current IAS 15.6 A 1.5
(Note 2)
Single Pulse Avalanche Energy EAS 36.5 mJ 1.6
TC = 25°C 33
Total Power Dissipation PD W
TC = 125°C 6.6
1.7
TA = 25°C 2.6
Total Power Dissipation PD W
TA = 125°C 0.5
Operating Junction and Storage Temperature range TJ, TSTG - 55 to +150 °C 1.8

1.1 Drain-Source Voltage (VDS )


VDS represents MOSFET absolute maximum voltage between Drain and Source. In operations,
voltage stress of Drain-Source should not exceed maximum rated value.

1.2 Gate-Source Voltage ( VGS )


VGS represents operating driver voltage between Gate and Source. In operations, voltage stress of
Gate-Source should not exceed maximum rated value.

1.3 Continuous Drain Current ( ID )


ID represents MOSFET’s continuous conduction current and could be calculated by below equation.
TJ  TC
ID 
TJ = Junction Temperature RJC  RDS (ON )  K
TC = Case Temperature
RDS(ON) = Drain-Source On-State Resistance
RθJC = Junction to Case Thermal Resistance
K = On-Resistance vs. Junction Temperature

3 Version: A1611

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