C o ntrol In t eg ra t ed P Owe r

Sys te m (C IPOS™)

I GCM 06B 60GA

Datasheet

For Power Management Application 1 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Table of Contents
CIPOS™ Control Integrated POwer System ........................................................................................................ 3
Features .............................................................................................................................................................. 3
Target Applications ........................................................................................................................................... 3
Description ......................................................................................................................................................... 3
System Configuration ....................................................................................................................................... 3
Pin Configuration .................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ....................................................................................................................................................... 5
Pin Description .................................................................................................................................................. 5
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12) ................................................ 5
VFO (Fault-output and NTC, Pin 14) ................................................................................................................. 6
ITRIP (Over current detection function, Pin 15) ................................................................................................ 6
VDD, VSS (Low side control supply and reference, Pin 13, 16) ....................................................................... 6
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) ............................................................................... 6
N (Low side common emitter, Pin 17) ............................................................................................................... 6
W, V, U (High side emitter and low side collector, Pin 18 - 20)......................................................................... 6
P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24) ......................................................... 6
R, S (Single phase diode bridge rectifier input pins, Pin 22, 23) ....................................................................... 6
Absolute Maximum Ratings................................................................................................................................... 7
Module Section .................................................................................................................................................. 7
Inverter Section.................................................................................................................................................. 7
Rectifier Diode Section ..................................................................................................................................... 7
Control Section .................................................................................................................................................. 8
Recommended Operation Conditions .................................................................................................................. 8
Static Parameters ................................................................................................................................................... 9
Dynamic Parameters ............................................................................................................................................ 10
Bootstrap Parameters .......................................................................................................................................... 10
Thermistor ............................................................................................................................................................. 11
Mechanical Characteristics and Ratings............................................................................................................ 11
Circuit of a Typical Application ........................................................................................................................... 12
Switching Times Definition .................................................................................................................................. 12
Electrical characteristic ....................................................................................................................................... 13
Package Outline .................................................................................................................................................... 14

Datasheet 2 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 6A

Features Description
Fully isolated Dual In-Line molded module The CIPOS™ module family offers the chance for
integrating various power and control components
• Infineon reverse conducting IGBTs with
to increase reliability, optimize PCB size and system
monolithic body diode costs.
• Optimized diodes for single phase diode bridge It is designed to control three phase AC motors and
rectifier permanent magnet motors in variable speed drives
• Rugged SOI gate driver technology with stability for applications like a refrigerator and a dish
washer. The package concept is specially adapted
against transient and negative voltage
to power applications, which need good thermal
• Allowable negative VS potential up to -11V for conduction and electrical isolation, but also EMI-
signal transmission at VBS=15V save control and overload protection.
• Integrated bootstrap functionality The features of Infineon reverse conducting IGBT
• Over current shutdown are combined with an optimized SOI gate driver for
excellent electrical performance.
• Temperature monitor
• Under-voltage lockout at all channels
• Low side common emitter System Configuration
• Cross-conduction prevention
• 3 half bridges with reverse conducting IGBT
• All of 6 switches turn off during protection
• Single phase diode bridge rectifier
• Lead-free terminal plating; RoHS compliant
• 3Φ SOI gate driver
• Thermistor
Target Applications
• Pin-to-heasink creepage distance typ. 1.6mm
• Dish washers
• Refrigerators
• Fans
• Low power motor drives

Datasheet 3 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Pin Configuration
Bottom View

Figure 1: Pin configuration

Internal Electrical Schematic

Figure 2: Internal schematic

Datasheet 4 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Pin Assignment
Pin Number Pin Name Pin Description
1 VS(U) U-phase high side floating IC supply offset voltage
2 VB(U) U-phase high side floating IC supply voltage
3 VS(V) V-phase high side floating IC supply offset voltage
4 VB(V) V-phase high side floating IC supply voltage
5 VS(W) W-phase high side floating IC supply offset voltage
6 VB(W) W-phase high side floating IC supply voltage
7 HIN(U) U-phase high side gate driver input
8 HIN(V) V-phase high side gate driver input
9 HIN(W) W-phase high side gate driver input
10 LIN(U) U-phase low side gate driver input
11 LIN(V) V-phase low side gate driver input
12 LIN(W) W-phase low side gate driver input
13 VDD Low side control supply
14 VFO Fault output / Temperature monitor
15 ITRIP Over-current shutdown input
16 VSS Low side control negative supply
17 N Low side common emitter
18 W Motor W-phase output
19 V Motor V-phase output
20 U Motor U-phase output
21 P Positive bus input voltage
22 S Single phase diode bridge rectifier S input
23 R Single phase diode bridge rectifier R input
24 NR Negative bus voltage

Pin Description
Schmitt-Trigger
HIN(U,V,W) and LIN(U,V,W) (Low side and high HINx INPUT NOISE
FILTER
side control pins, Pin 7 - 12) LINx ≈ 5kΩ UZ=10.5V
SΩITCH LEVEL
These pins are positive logic and they are VIH; VIL

responsible for the control of the integrated IGBT.

The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility Figure 3: Input pin structure
down to 3.3V controller outputs. Pull-down resistor
of about 5kΩ is internally provided to pre-bias inputs a) tFILIN b) tFILIN
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitt- HIN
LIN
HIN
LIN
trigger and noise filter provide beneficial noise
high
rejection to short input pulses. HO HO
LO low LO
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4. Figure 4: Input filter timing diagram

Datasheet 5 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

It is recommended for proper work of CIPOS™ not The IC shuts down all the gate drivers’ power
to provide input pulse-width lower than 1us. outputs, when the VDD supply voltage is below
VDDUV- = 10.4V. This prevents the external power
The integrated gate drive provides additionally a
switches from critically low gate voltage levels
shoot through prevention capability which avoids
during on-state and therefore from excessive power
the simultaneous on-state of two gate drivers of the
dissipation.
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3
and LO3). When two inputs of a same leg are VB(U,V,W) and VS(U,V,W) (High side supplies,
activated, only former activated one is activated so
Pin 1 - 6)
that the leg is kept steadily in a safe state.
VB to VS is the high side supply voltage. The high
A minimum deadtime insertion of typically 380ns is side circuit can float with respect to VSS following
also provided by driver IC, in order to reduce cross- the external high side power device emitter voltage.
conduction of the external power switches.
Due to the low power consumption, the floating
VFO (Fault-output and NTC, Pin 14) driver stage is supplied by integrated bootstrap
The VFO pin indicates a module failure in case of circuit.
under voltage at pin VDD or in case of triggered The under-voltage detection operates with a rising
over current detection at ITRIP. A pull-up resistor is supply threshold of typical VBSUV+ = 12.1V and a
externally required to bias the NTC. falling threshold of VBSUV- = 10.4V.
VS(U,V,W) provide a high robustness against
VDD negative voltage in respect of VSS of -50V
RON ,FLT
transiently. This ensures very stable designs even
VFO from ITRIP -Latch under rough conditions.
>1
from uv - detection N (Low side common emitter, Pin 17)
VSS
Thermistor The low side common emitter is available for current
CIPOS™ measurement. It is recommended to keep the
connection to pin VSS as short as possible in order
Figure 5: Internal circuit at pin VFO to avoid unnecessary inductive voltage drops.

The same pin provides direct access to the NTC, W, V, U (High side emitter and low side collector,
which is referenced to VSS. An external pull-up Pin 18 - 20)
resistor connected to +5V ensures, that the resulting These pins are motor U, V, W input pins
voltage can be directly connected to the
microcontroller P, NR (Positive bus input voltage and negative
bus voltage, Pin 21, 24)
ITRIP (Over current detection function, Pin 15)
The high side IGBT are connected to the bus
CIPOS™ provides an over current detection
voltage. It is noted that the bus voltage does not
function by connecting the ITRIP input with the
exceed 450 V. The bus voltage is referenced to NR
motor current feedback. The ITRIP comparator
ground.
threshold (typ. 0.47V) is referenced to VSS ground.
An input noise filter (typ: tITRIPMIN = 530ns) prevents R, S (Single phase diode bridge rectifier input
the driver to detect false over-current events.
pins, Pin 22, 23)
Over current detection generates a shut down of all Rectifier input pins for connecting to the grid line.
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.

VDD, VSS (Low side control supply and

reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.

Datasheet 6 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Absolute Maximum Ratings

(VDD = 15V and TJ = 25°C, if not stated otherwise)

Module Section

Value
Description Condition Symbol Unit
min max
Storage temperature range Tstg -40 125 °C
Insulation test voltage RMS, f = 60Hz, t = 1min VISOL 2000 - V
Operating case temperature range Refer to Figure 6 TC -40 100 °C

Inverter Section
Value
Description Condition Symbol Unit
min max
Max. blocking voltage IC = 250µA VCES 600 - V
DC link supply voltage of P-N Applied between P-N VPN - 450 V
DC link supply voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V
TC = 25°C, TJ < 150°C -6 6
Output current IC A
TC = 100°C, TJ < 150°C -4 4
Maximum peak output current less than 1ms IC -12 12 A
1
Short circuit withstand time VDC ≤ 400V, TJ = 150°C tSC - 5 µs
Power dissipation per IGBT Ptot - 19.3 W
Operating junction temperature range TJ -40 150 °C
Single IGBT thermal resistance,
RthJC - 6.47 K/W
junction-case

Rectifier Diode Section

Value
Description Condition Symbol Unit
min max
Maximum repetitive reverse voltage VRRM 900 - V
RMS forward current TC = 100°C, TJ < 150°C IFRM - 10 A
50Hz, Non repetitive
- 130
Peak surge forward current TC = 25°C IFSM A
110
TC = 125°C
tp = 10ms
84
I2t - value TC = 25°C I2t - A2s
60
TC = 125°C
Operating junction temperature range TJ(RD) -40 150 °C
Single Diode thermal resistance,
RthJC(RD) - 6.2 K/W
junction-case

1
Allowed number of short circuits: <1000; time between short circuits: >1s.

Datasheet 7 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Control Section
Value
Description Condition Symbol Unit
min max
Module supply voltage VDD -1 20 V
High side floating supply voltage
VBS -1 20 V
(VB vs. VS)
VIN -1 10
Input voltage LIN, HIN, ITRIP V
VITRIP -1 10
Switching frequency fPWM - 20 kHz

Recommended Operation Conditions

All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.

Value
Description Symbol Unit
min typ max
DC link supply voltage of P-N VPN 0 - 400 V
High side floating supply voltage (VB vs. VS) VBS 13.5 - 18.5 V
Low side supply voltage VDD 14.0 16 18.5 V
ΔVBS, -1 1
Control supply variation - V/µs
ΔVDD -1 1
VIN 0 5
Logic input voltages LIN,HIN,ITRIP - V
VITRIP 0 5
Between VSS - N (including surge) VSS -5 - 5 V

Figure 6: TC measurement point 1

1
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.

Datasheet 8 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)

Value
Description Condition Symbol Unit
min typ max

Iout = 4A
- 1.6 2.0
Collector-Emitter saturation voltage TJ = 25°C VCE(sat) V
- 1.8 -
150°C

Iout = -4A
- 1.75 2.2
Emitter-Collector forward voltage TJ = 25°C VF V
- 1.8
150°C

Iin= -10A
- 1 1.4
Rectifier diode forward voltage 25°C VFR V
- 0.95 -
150°C
-
Collector-Emitter leakage current VCE = 600V ICES - 1 mA
-
Logic "1" input voltage (LIN,HIN) VIH - 2.1 2.5 V

Logic "0" input voltage (LIN,HIN) VIL 0.7 0.9 - V

ITRIP positive going threshold VIT,TH+ 400 470 540 mV
ITRIP input hysteresis VIT,HYS 40 70 - mV

VDD and VBS supply under voltage VDDUV+

10.8 12.1 13.0 V
positive going threshold VBSUV+
VDD and VBS supply under voltage VDDUV-
9.5 10.4 11.2 V
negative going threshold VBSUV-
VDD and VBS supply under voltage VDDUVH
1.0 1.7 - V
lockout hysteresis VBSUVH
Input clamp voltage
Iin = 4mA VINCLAMP 9.0 10.1 12.5 V
(HIN, LIN, ITRIP)
Quiescent VBx supply current
HIN = 0V IQBS - 300 500 µA
(VBx only)
Quiescent VDD supply current
LIN = 0V, HINX = 5V IQDD - 370 900 µA
(VDD only)
Input bias current VIN = 5V IIN+ - 1 1.5 mA

Input bias current VIN = 0V IIN- - 2 - µA

ITRIP input bias current VITRIP = 5V IITRIP+ - 65 150 µA

VFO input bias current VFO = 5V, VITRIP = 0V IFO - 60 - µA
VFO output voltage IFO = 10mA, VITRIP = 1V VFO - 0.5 - V

Datasheet 9 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)

Value
Description Condition Symbol Unit
min typ max
Turn-on propagation delay time ton - 650 - ns
Turn-on rise time VLIN,HIN = 5V; Iout = 4A, tr - 20 - ns
Turn-on switching time VDC = 300V tc(on) 100 ns
Reverse recovery time trr 130 ns
Turn-off propagation delay time toff - 680 - ns
VLIN,HIN = 0V; Iout = 4A,
Turn-off fall time tf - 180 - ns
VDC = 300V
Turn-off switching time tc(off) 220 ns
Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1420 - ns
Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns
Input filter time at LIN, HIN for turn
VLIN,HIN = 0V & 5V tFILIN - 290 - ns
on and off
Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs
Deadtime between low side and high
DTPWM 1.0 - - µs
side
Deadtime of gate drive circuit DTIC 380 ns
VDC = 300V, IC = 4A,
IGBT turn-on energy (includes - 75 -
TJ = 25°C Eon µJ
reverse recovery of diode) - 130 -
150°C
VDC = 300V, IC = 4A,
- 120 -
IGBT turn-off energy TJ = 25°C Eoff µJ
- 190 -
150°C
VDC = 300V, IC = 4A,
- 40 -
Diode recovery energy TJ = 25°C Erec µJ
- 70 -
150°C

Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)

Value
Description Condition Symbol Unit
min typ max
Repetitive peak reverse
VRRM 600 V
voltage
VS2 or VS3 = 300V, TJ= 25°C 35
Bootstrap resistance of VS2 and VS3 = 0V, TJ = 25°C 40
RBS1 Ω
U-phase 1 VS2 or VS3 = 300V, TJ = 125°C 50
VS2 and VS3 = 0V, TJ = 125°C 65
Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS 50 ns
Forward voltage drop IF = 20mA, VS2 and VS3 = 0V VF_BS 2.6 V

1
RBS2 and RBS3 have same values to RBS1.

Datasheet 10 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Thermistor
Value
Description Condition Symbol Unit
min typ max
Resistor TNTC = 25°C RNTC - 85 - kΩ
B-constant of NTC
B(25/100) - 4092 - K
(Negative temperature coefficient)

Figure 7: Thermistor resistance – temperature curve and table

(For more information, please refer to the application note ‘AN CIPOS-mini 1 Technical description’)

Mechanical Characteristics and Ratings

Value Unit
Description Condition
min typ max
Mounting torque M3 screw and washer 0.59 0.69 0.78 Nm
Flatness Refer to Figure 8 -50 - 100 µm
Weight - 6.15 - g

Figure 8: Flatness measurement position

Datasheet 11 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Circuit of a Typical Application

NR (24)

(1) VS(U)

R (23)

(2) VB(U) HO1

VB1

VS1
S (22)
(3) VS(V) RBS1

(4) VB(V) HO2

VB2

VS2
RBS2 P (21)
(5) VS(W)

HO3
(6) VB(W)
VB3

VS3 U (20)

RBS3

(7) HIN(U) HIN1 LO1

(8) HIN(V) HIN2

V (19) 3-ph AC
Micro (9) HIN(W) HIN3 Motor
(10) LIN(U)
Controller (11) LIN(V)
LIN1
LO2
LIN2
(12) LIN(W)
LIN3 W (18)
VDD line (13) VDD
VDD
(14) VFO VFO
5 or 3.3V line (15) ITRIP
LO3
ITRIP
N (17)
(16) VSS VSS

Thermistor

Figure 9: Application circuit

Switching Times Definition

HINx
2.1V
LINx
0.9V
trr
toff ton
10%
iCx
90% 90%

tf tr
10% 10%
10% 10%
vCEx
tc(off) tc(on)

Figure 10: Switching times definition

Datasheet 12 Ver. 1.3, 2014-06-01

 CIPOS™ IGCM06B60GA

Electrical characteristic

12 12 12
TJ=25℃ VDD=15V
11 11 11

Ic, Collector - Emitter current [A]

Ic, Collector - Emitter current [A]

10 10 10

IF, Anode - Cathode current [A]

9 9 9
8 8 8
7 7 7
6 6 6
5 5 5
VDD=13V
4 VDD=15V 4 4
VDD=20V TJ=25℃ RC IGBT @TJ=25℃
3 3 3
TJ=150℃ RC IGBT @TJ=150℃
2 2 2
Rectifier @TJ=25℃
1 1 1 Rectifier @TJ=150℃
0 0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE(sat), Collector - Emitter voltage [V] VCE(sat), Collector - Emitter voltage [V] VF, Forward voltage [V]
Typ. Collector – Emitter saturation voltage Typ. Collector – Emitter saturation voltage Typ. Anode - Cathode forward voltage

1.0 0.40 200

VDC=300V VDC=300V
Eoff, Turn off switching energy loss [mJ]
Eon, Turn on switching energy loss [mJ]

Erec, Reverse recovery energy loss [uJ]

0.9 High side @TJ=25℃dd 180 VDD=15V
VDD=15V 0.35
High side @TJ=150℃d
0.8 Low side @TJ=25℃dd 160 High side @TJ=25℃dd
0.30
Low side @TJ=150℃d High side @TJ=150℃d
0.7 High side @TJ=25℃dd 140
Low side @TJ=25℃dd
High side @TJ=150℃d 0.25
0.6 120 Low side @TJ=150℃d
Low side @TJ=25℃dd
0.5 Low side @TJ=150℃d 0.20 100

0.4 80
0.15
0.3 60
0.10
0.2 40
0.05
0.1 VDC=300V 20
VDD=15V
0.0 0.00 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]
Typ. Turn on switching energy loss Typ. Turn off switching energy loss Typ. Reverse recovery energy loss

900 400 1800

VDC=300V VDC=300V VDC=300V
toff, Turn off propagation delay time [ns]
ton, Turn on propagation delay time [ns]

VDD=15V VDD=15V VDD=15V

tc(on), Turn on switching time [ns]

350
850 High side @TJ=25℃dd 1600
High side @TJ=25℃dd High side @TJ=25℃
300 High side @TJ=150℃d
High side @TJ=150℃d High side @TJ=150℃
800 Low side @TJ=25℃dd 1400
Low side @TJ=25℃dd Low side @TJ=25℃
250 Low side @TJ=150℃d
Low side @TJ=150℃d Low side @TJ=150℃
750 200 1200

150
700 1000

100

650 800
50

600 0 600
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]
Typ. Turn on propagation delay time Typ. Turn on switching time Typ. Turn off propagation delay time

1100 500 10
ZthJC, RC-IGBT transient thermal resistance [K/W]

VDC=300V VDC=300V
1000
tc(off), Turn off switching time [ns]

VDD=15V 450 VDD=15V

900
trr, Reverse recovery time [ns]

400 High side @TJ=25℃dd 1

800 High side @TJ=150℃d
High side @TJ=25℃ 350 Low side @TJ=25℃ddd
700
High side @TJ=150℃
300
Low side @TJ=150℃d
0.1 D : duty ratio
600 Low side @TJ=25℃ D=50%
500 Low side @TJ=150℃ 250 D=20%
D=10%
400 200 0.01 D=5%
300 D=2%
150
Single pulse
200
100 1E-3
100
50
0
0 1 2 3 4 5 6 7 8 9 10 11 12
0 1E-4
Ic, Collector current [A] 0 1 2 3 4 5 6 7 8 9 10 11 12 1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100
Ic, Collector current [A] tP, Pulse width [sec.]
Typ. Turn off switching time
Typ. Reverse recovery time IGBT transient thermal resistance at all
six IGBTs operation

Datasheet 13 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Package Outline

Datasheet 14 Ver. 1.3, 2014-06-01

CIPOS™ IGCM06B60GA

Revision History
Previous Version: Datasheet Ver. 1.2
Major changes since the last revision
Page or Reference Description of change
8 Figure 6 updated
14 Package Outline updated

Datasheet 15 Ver. 1.3, 2014-06-01

Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™,
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POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
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Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™
of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of
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Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design
Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.

Last Trademarks Update 2014-07-17

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The information given in this document shall in no event be and conditions and prices please contact your nearest Infineon
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