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2SA1248/2SC3116: 160V/700mA Switching Applications

1) The document provides specifications for the 2SA1248/2SC3116 PNP/NPN epitaxial planar silicon transistors that are suitable for 160V/700mA switching applications such as color TV sound output and converters. 2) The transistors have a high breakdown voltage of 180V and can handle a large current capacity of 700mA, utilizing an MBIT process. 3) Key electrical characteristics include a DC current gain ranging from 100 to 400, depending on the model, and a gain-bandwidth product of up to 120MHz.

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0% found this document useful (0 votes)
78 views

2SA1248/2SC3116: 160V/700mA Switching Applications

1) The document provides specifications for the 2SA1248/2SC3116 PNP/NPN epitaxial planar silicon transistors that are suitable for 160V/700mA switching applications such as color TV sound output and converters. 2) The transistors have a high breakdown voltage of 180V and can handle a large current capacity of 700mA, utilizing an MBIT process. 3) Key electrical characteristics include a DC current gain ranging from 100 to 400, depending on the model, and a gain-bandwidth product of up to 120MHz.

Uploaded by

Gonzalo Rojas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Ordering number:ENN1032B

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1248/2SC3116

160V/700mA Switching Applications

Uses Package Dimensions


· Color TV sound output, converters, inverters. unit:mm
2009B
Features [2SA1248/2SC3116]
· High breakdown voltage. 8.0
2.7
4.0
· Large current capacity.
· Using MBIT process

11.0
3.0

7.0
1.5
1.6

3.0
0.8
0.8
0.6
0.5

15.5
1 2 3
1 : Emitter

1.2
2 : Collector
( ) : 2SA1248 3 : Base
2.4
4.8 SANYO : TO-126
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)180 V
Collector-to-Emitter Voltage VCEO (–)160 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)0.7 A
Collector Current (Pulse) ICP (–)1.5 A

Pc 1 W
Collector Dissipation
Tc=25˚C 10 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)120V, IE=0 (–)1.0 µA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1.0 µA
hFE1 VCE=(–)5V, IC=(–)100mA 100* 400*
DC Current Gain
hFE2 VCE=(–)5V, IC=(–)10mA 90
Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA 120 MHz
* : 2SA1248/2SC3116 are classified by follows according to hFE at 100mA. Continued on next page.
Rank R S T
hFE 100 to 200 140 to 280 200 to 400

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/5137KI/D222KI, TS No.1032-1/4
2SA1248/2SC3116
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
8
Common Base Output Capacitance Cob VCB=(–)10V, f=1MHz pF
(11)
0.12 0.4
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)250mA, IB=(–)25mA V
(–0.2) (–0.5)
Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)250mA, IB=(–)25mA (–)0.85 (–)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CEO IC=(–)10µA, IE=0 (–)180 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ (–)160 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)10µA, IC=0 (–)6 V
Turn-ON Time ton See Specified Test Circuit (60)50 ns
(900)
Storage Time tstg See Specified Test Circuit ns
1000
Fall Time tf See Specified Test Circuit (60)60 ns

Switching Time Test Circuit


IB1
PW=20µs
D.C.≤1% IB2

INPUT RB
VR 333Ω

50Ω
+ +

100µF 470µF

--5V 100V
20IB1=--20IB2=IC=300mA
(For PNP, the polarity is reversed.)

IC -- VCE IC -- VCE
--800 800
From top 2SA1248 From top 2SC3116
--200mA Pulse 100mA Pulse
--700
--180mA 120mA
-- 700
90mA 50mA
--100mA
Collector Current, IC – mA

Collector Current, IC – mA

--160mA 80mA
--600
--80mA 600 40mA
--140mA 70mA
--500 --60mA 500 60mA 30mA
--40mA 20mA
--400 400

--20mA
--300 300 10mA

--200 200

--100 100
IB=0 IB=0
0 0
0 --200 --400 --600 --800 --1000 0 200 400 600 800 1000
Collector-to-Emitter Voltage, VCE – mV ITR03053 Collector-to-Emitter Voltage, VCE – mV ITR03054

IC -- VCE IC -- VCE
--800 1000
2SA1248 2SC3116
A
--700 --5.0m Pulse Pulse
A A
--4.5m 4.0m
A 800 3.5mA
Collector Current, IC – mA

Collector Current, IC – mA

--4.0 m
--600
--3 .5 m A 3.0mA
--500 -- 3 .0 m A
600 2.5mA
--2.5mA
--400 2.0mA
--2.0mA
--300 400 1.5mA
--1.5mA
--200 --1.0mA 1.0mA
200
--100
--0.5mA 0.5mA
IB=0 IB=0
0 0
0 --10 --20 --30 --40 --50 --60 --70 --80 0 10 20 30 40 50 60 70 80
Collector-to-Emitter Voltage, VCE – V ITR03055 Collector-to-Emitter Voltage, VCE – V ITR03056

No.1032-2/4
2SA1248/2SC3116
IC -- VBE VCE(sat) -- IC
1000 10
VCE=5V IC / IB=10
5

Saturation Voltage, VCE (sat) – V


800 3
Collector Current, IC – mA

1.0
600

116

Collector-to-Emitter
5

8
124
2SC3
3
48

2SA
400
2
A 12
2S
0.1 6
311
200 2SC
5
For PNP, minus sign is
3 For PNP, minus sign is omitted.
omitted.
0 2
0 0.2 0.4 0.6 0.8 1.0 1.2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2
Base-to-Emitter Voltage, VBE – V ITR03057 Collector Current, IC – mA ITR03058
hFE -- IC hFE -- IC
1000 1000
7 2SA1248 7 2SC3116
Common Emitter DC Current Gain, hFE

Common Emitter DC Current Gain, hFE


5 Pulse 5 Pulse
3 3
2 2

VC

10V
V CE

100 100
--10V

5V
E
7 7
--5V

=2
=--

5 5

V
2V

3 3
2 2

10 10
7 7
5 5

3 3
3 5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2
Collector Current, IC – mA ITR03059 Collector Current, IC – mA ITR03060
fT -- IC fT -- IC
5 5
2SA1248 2SC3116
Gain-Bandwidth Product, fT – MHz

Gain-Bandwidth Product, fT – MHz

3 3

2 2
VCE=5V VCE=10V

10V 5V
100 100

7 7

5 5

3 3

2 2

10 10
5 7 --10 2 3 5 7 --100 2 3 5 7 --1000 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC – mA ITR03061 Collector Current, IC – mA ITR03062
Cob -- VCB ASO
100 3
Common Base Output Capacitance, Cob – pF

f=1MHz 2 2SA1248 / 2SC3116


7

5 1.0
1m

DC
s
10

5
Collector Current, IC – A

3 op
ms

3 era
2 DC tio
10

2 n
op
0m

2SA era
Tc

0.1 tio
s

124
=2

10 8 nT
a=

5 25
7 2SC °C
C

311 3
5
6
2
3 0.01

2 5

For PNP, minus sign is omitted. 3 For PNP, minus sign is omitted.
1.0 2
1.0 2 3 5 7 10 2 3 5 7 100 2 1.0 2 3 5 7 10 2 3 5 7 100 2 3
Collector-to-Base Voltage, VCB -- V ITR03063 Collector-to-Emitter Voltage, VCE – V ITR03064

No.1032-3/4
2SA1248/2SC3116
PC -- Ta
12
2SA1248 / 2SC3116

10
Collector Dissipation, PC – W

Id
ea
6 lr
ad
iat
io
n
4

2
No heat sink

0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C ITR03065

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2002. Specifications and information herein are subject to
change without notice.

PS No.1032-4/4

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