Tunnel Diode

• A Tunnel diode is a heavily doped p-n junction diode in which the electric current decreases as the voltage increases.
• In tunnel diode, electric current is caused by “Tunneling”. The tunnel diode is used as a very fast switching device in computers. It
is also used in high-frequency oscillators and amplifiers.
• If a small number of impurities are added to the p-n junction diode (p-type and n-type semiconductor), a wide depletion region is
formed. On the other hand, if large number of impurities are added to the p-n junction diode, a narrow depletion region is
formed.
• In tunnel diode, the p-type and n-type semiconductor is heavily doped which means a large number of impurities are introduced
into the p-type and n-type semiconductor. This heavy doping process produces an extremely narrow depletion region. The
concentration of impurities in tunnel diode is 1000 times greater than the normal p-n junction diode.
• Approximately a tunnel diode is doped 1000 times as heavily as a normal diode.
• Due to this, large number of majority carriers are available in the semiconductor layers.
• As a result, in tunnel diode the depletion layer is very narrow (The initial recombination is occurred using carriers near to junction
itself).
• Compare to normal PN junction, the depletion layer of tunnel diode is 100 times narrower.
• The width of depletion layer will be of the order of 10-6cm.
• The depletion layer of tunnel diode is very small. It is in nanometers. So the electrons can directly tunnel across the small
depletion region from n-side conduction band into the p-side valence band.
• In tunnel diodes, the electrons need not overcome the opposing force from the depletion layer to produce electric current. The
electrons can directly tunnel from the conduction band of n-region into the valence band of p-region. Thus, electric current is
produced in tunnel diode.
V – I characteristics of Tunnel diode
• As the forward voltage starts to increase, the diode current
raises rapidly due to tunnel effect.
• After the point VP, the tunnel effect is reduced and current
flow starts to decrease even though increase in voltage( ie
negative resistance region).
• After the point VV, the tunnel diode behaves as a normal
diode.
• When the forward voltage applied across the tunnel diode
increased from zero, electrons from n- region tunnel through
the potential barrier to the p- region.
• When the forward voltage (VP) increases, the diode current
increases till the peak-point (IP). (ie, positive resistance)
• When voltage increased beyond VP, the diode current
decreases till valley point (VV). The tunnel diode exhibits
negative resistance from VP to VV.
• When the forward voltage increased beyond valley point, the
tunnel diode behaves as a normal diode( exhibiting positive
resistance).
• Advantages of tunnel diodes
• Long life
• High-speed operation
• Low noise
• Low power consumption
• Disadvantages of tunnel diodes
• Tunnel diodes cannot be fabricated in large numbers
• Being a two terminal device, the input and output are not isolated from one another.
• Applications of tunnel diodes
• Tunnel diodes are used as logic memory storage devices.
• Tunnel diodes are used in relaxation oscillator circuits.
• Tunnel diode is used as an ultra high-speed switch.
• Tunnel diodes are used in FM receivers.
Breakdown Diodes

• Operated in breakdown region

• Constant voltage devices or voltage references
Two breakdown diodes – 1) Zener Diodes
2) Avalanche Diodes
AVALANCHE DIODE
• The avalanche breakdown occurs when a high reverse voltage is applied across the diode. As we
increase the applied reverse voltage, the electric field across the junction increases.
• This electric field exerts a force on the electrons at the junction and frees them from covalent
bonds. These free electrons start moving with high velocity across the junction and collide with
the other atoms, thus creating more free electrons. This results in a rapid increase in net current.
• When the applied voltage reaches the breakdown region, the accelerated charge carriers will
collide with the atoms present generating free electrons. The free electrons generated can
further collide with other atoms resulting in more free electrons, this collision continues and
hence there will be a drastic increase in charge carriers in the depletion region. Due to these
increased charge carriers, we will see a sudden jump in the reverse saturation current.
• This effect is known as the Avalanche effect and the voltage after which the avalanche effect is
noticed is known as the breakdown voltage. The avalanche breakdown effect is a result of impact
ionization.
• Avalanche diode has a positive temperature coefficient, that is breakdown voltage increases
when temperature rises.
ZENER BREAKDOWN
 ZENER DIODE
• A Zener diode is similar to the normal diode which allows current to flow from
anode to cathode, but Zener diode operates in reverse bias mode.
• When the reverse voltage is increased across the PN junction diode, then the
electric field across the diode junction increases.
• This will result in a force of attraction on a negatively charged electron across the
junction. The force from this junction will free electron from its covalent bond.
When the electric field increases with the applied voltage, more and more covalent
bond break.
• This will result in drifting the electrons across the junction and electron hole
recombination occurs.
• Finally, net current will flow and it will increase with increase in the electric field.
• Zener diode occurs in a PN junction diode with thin junction and heavy doping.
• Zener diode has negative temperature coefficient that is breakdown voltage
decreases when temperature rises.
V-I characteristics of breakdown diodes
V-I characteristics of breakdown diodes
• Here, breakdown diodes receive positive voltage across its
cathode to anode terminals. In this region, diode will be in
reverse bias.
• Initially, when receiving reverse voltage, the current is very
small. Leakage current is also called as small current which will
be flowing through the diode.
• The moment the breakdown of diode occurs that is reverse
voltage reaches PIV, the current increases suddenly. This
current is called avalanche current.
• This is used in the application of voltage regulation.