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Lab 5 Solid State Physics 2 (Norah)

This lab experiment aims to determine the energy band gap of a semiconductor using a PN junction diode. When a PN junction is reverse biased, current flows due to minority carriers (electrons in P and holes in N). The concentration of these carriers depends on the energy gap. The experiment measures the current through the diode at different temperatures while reverse biased at set voltages. From the graph of ln(current) vs 1/temperature, the slope is determined, and using the given formula, the energy band gap is calculated as 0.39574 eV. The expected band gap for germanium is 0.68-0.72 eV.

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ضياء بن احمد الكباري
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185 views

Lab 5 Solid State Physics 2 (Norah)

This lab experiment aims to determine the energy band gap of a semiconductor using a PN junction diode. When a PN junction is reverse biased, current flows due to minority carriers (electrons in P and holes in N). The concentration of these carriers depends on the energy gap. The experiment measures the current through the diode at different temperatures while reverse biased at set voltages. From the graph of ln(current) vs 1/temperature, the slope is determined, and using the given formula, the energy band gap is calculated as 0.39574 eV. The expected band gap for germanium is 0.68-0.72 eV.

Uploaded by

ضياء بن احمد الكباري
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© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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LAB 5: ENERGY GAP OF

SEMICONDUCTOR
Done by: Norah Alghamedi
Lab 5: Energy gap of semiconductor Solid State Physics 2

Objective
To determine the Energy Band Gap of a Semiconductor by using PN Junction
Diode.

Theory

A semi-conductor always possesses an energy gap between its valence and conduction bands.
For the conduction of electricity, a certain amount of energy is to be given to the electron so
that it can jump from the valence band to the conduction band. The energy so needed is the
measure of the energy gap (Eg) between the top and bottom of valence and conduction bands,
respectively. In case of insulators, the value of Eg varies from 3 to 7 eV. However, for
semiconductors, it is quite small.
When a p-n junction is reverse biased the current through the junction is due to minority
carriers i.e., due to electrons in P and holes in N section. The concentration of these carriers
depends upon the energy gap E.
https://www.youtube.com/watch?v=h9QIwefSrrI

The set-up of experiment


Tools
1- Semiconductor diode
2- Ammeter
3- Voltmeter
4- Thermometer
5- Power supply
6- heater

Experiment procedure:
1. Insert the thermometer in the hole of the oven.
2. Switch ON the instrument using ON/OFF toggle switch provided on the front panel.
3. Keep the temperature control switch to the high side.
4. Adjust the voltage at 1V DC.
5. Switch ON the oven using ON/OFF toggle switch provided on the front panel.
Temperature starts increasing and the reading of microammeter also starts increasing.
6. When temperature reaches to 90℃ or 100℃, switch OFF the oven and note down the
reading of microammeter (µA).
7. As the temperature starts falling, note down the readings of microammeter after
every 5℃ or 10℃ drops in temperature.
8. Repeat the whole procedure for 2V and 3V DC. 9. Plot graph between ln(Is )and
103 /T for different voltages.
Calculations

T (K) Current (IS)


T (0C) V(v) 103/T Ln (IS)
+273 (µA) x10-6

80 353 1 2.832861 24 1.380211

75 348 1 2.873563 20 1.30103

70 343 1 2.915452 18 1.255273

65 338 1 2.95858 14 1.146128

60 333 1 3.003003 11 1.041393

55 328 1 3.04878 9 0.954243

50 323 1 3.095975 8 0.90309

45 318 1 3.144654 6 0.778151

40 313 1 3.194888 4 0.60206

35 308 1 3.246753 4 0.60206

Taking 103 / T along X-axis and ln( Is) along Y-axis, plot a graph
between ln(Is) and 103 / T. The graph will be a straight line with a
negative slope as shown:

The graph between ln(Is) and 10^3/T


1.6

1.4

1.2
ln(Is) (micro A)

0.8

0.6

0.4

0.2

0
2.8 2.9 3 3.1 3.2 3.3

10^3/T ( K)
the slope of straight line from the previous graph is:
(slope = -1.992964024 = |-1.992964024 | = 1.992964024)
Now we can calculate band gap using formula:
𝑠𝑙𝑜𝑝𝑒 1 ∙ 992964024
𝐵𝑎𝑛𝑑 𝑔𝑎𝑝 (𝐸𝑔 ) = = = 0 ∙ 39574
5 ∙ 036 5 ∙ 036
The calculated value of energy band gap for germanium diode is:
0 ∙ 39574 𝑒𝑉
The energy band gap of germanium diode varies from 0.68 eV -0.72

Result: The band gap (Eg) of the given semiconductor is found to be


__0 ∙ 39574 𝑒𝑉 ____ eV.

Precautions
The following precautions should be taken while performing the experiment:

1. The diode must be reverse biased.


2. Do not exceed the temperature of the oven above 100℃ to avoid over
heating of the diode.

3. The voltmeter and ammeter reading should initially be at zero mark.

4. Bulb of the thermometer should be inserted well in the oven.


5. Readings of microammeter should be taken when the temperature is
decreasing.

6. Readings of current and temperature must be taken simultaneously.

‫هاجر الغامد ي‬

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