DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3108
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE

DESCRIPTION
The 2SK3108 is N channel MOS FET device that features a ORDERING INFORMATION
low on-state resistance and excellent switching characteristics, PART NUMBER PACKAGE
and designed for high voltage applications such as DC/DC 2SK3108 Isolated TO-220
converter.

FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Avalanche capability rated
•Built-in gate protection diode
•Isolated TO-220 package

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 200 V

Gate to Source Voltage (VDS = 0 V) VGSS ±30 V

Drain Current(DC) (TC = 25°C) ID(DC) ±8.0 A

Note1
Drain Current(pulse) ID(pulse) ±24 A

Total Power Dissipation (TA = 25°C) PT1 2.0 W

Total Power Dissipation (TC = 25°C) PT2 25 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −55 to +150 °C

Note2
Single Avalanche Current IAS 8.0 A
Note2
Single Avalanche Energy EAS 51 mJ

Note1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13331EJ1V0DS00 (1st edition) The mark ★ shows major revised points. © 1998,2000
Date Published January 2000 NS CP (K)
Printed in Japan
 2SK3108

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Drain Leakage Current IDSS VDS = 200 V, VGS = 0 V 100 µA
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V
Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 1.5 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 4.0 A 0.32 0.4 Ω
Input Capacitance Ciss VDS = 10 V 400 pF
Output Capacitance Coss VGS = 0 V 110 pF
Reverse Transfer Capacitance Crss f = 1 MHz 55 pF
Turn-on Delay Time td(on) VDD = 100 V, ID = 4.0 A 12 ns
Rise Time tr VGS(on) = 10 V 25 ns
Turn-off Delay Time td(off) RG = 10 Ω 40 ns
Fall Time tf 20 ns
★ Total Gate Charge QG VDD = 160 V 18 nC
Gate to Source Charge QGS VGS = 10 V 3.5 nC
Gate to Drain Charge QGD ID = 8.0 A 10 nC
Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 250 ns
Reverse Recovery Charge Qrr di/dt = 50 A/µs 1.0 µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME

D.U.T. D.U.T. VGS

RG = 25 Ω L RL
VGS 90 %
10 % VGS(on)
Wave Form
RG 0
PG. 50 Ω VDD PG.
VDD
VGS = 20 → 0 V ID 90 %
90 %
VGS ID
BVDSS 10 % 10 %
0 ID 0
IAS Wave Form

ID VDS τ td(on) tr td(off) tf

VDD
τ = 1 µs ton toff
Duty Cycle ≤ 1 %
Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.
IG = 2 mA RL

PG. 50 Ω VDD

2 Data Sheet D13331EJ1V0DS00

 2SK3108

★ TYPICAL CHARACTERISTICS (TA = 25°C)

DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE
100
30 Pulsed

25 VGS = 30 V 10

ID - Drain Current - A
ID - Drain Current - A

20 1
VGS = 10 V
15
0.1

10 Tch =125˚C
75˚C
0.01 25˚C
5 -25˚C
VDS = 10 V
Pulsed 0.001
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs. FORWARD TRANSFER ADMITTANCE vs.

|yfs| - Forward Transfer Admittance - s

CHANNEL TEMPERATURE DRAIN CURRENT
VGS(off) - Gate to Source Cut-off Voltage - V

5.0 10
VDS = 10 V VDS =10 V
ID = 1 mA Pulsed
4.5

1 Tch = -25˚C
4.0
Tch = 25˚C
Tch = 75˚C
3.5 Tch = 125˚C
0.1
3.0

2.5
0.01
2.0 0.01 0.1 1 10 100
− 50 − 25 0 25 50 75 100 125 150
Tch - Channel Temperature - ˚C ID- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE

RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω

GATE TO SOURCE VOLTAGE RESISTANCE vs. DRAIN CURRENT

1.0 1.0
Pulsed Pulsed

0.8 0.8
VGS = 10 V
ID = 8.0 A 0.6
0.6 4.0 A
1.6 A

0.4 0.4 VGS = 30 V

0.2 0.2

0 0
0 2 4 6 8 10 12 14 16 18 20 0.1 1 10 100
VGS - Gate to Source Voltage - V ID - Drain Current - A

Data Sheet D13331EJ1V0DS00 3

 2SK3108

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
RDS(on) - Drain to Source On-state Resistance - Ω

1.2 FORWARD VOLTAGE

100
Pulsed
1.0

ISD - Diode Forward Current - A

ID = 8.0 A
0.8
10

0.6 ID = 4.0 A

VGS = 10 V
0.4 1 VGS = 0 V

0.2
VGS = 10 V
Pulsed
0 0.1
− 50 − 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V

CAPACITANCE vs. DRAIN TO

SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10000 1000
VGS = 0 V
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF

f = 1 MHz
tr

1000 100

tf
Ciss
td(off)
100 td(on)
10

Coss VDD = 100 V

VGS = 10 V
Crss RG = 10 Ω
10 1
0.1 1 10 100 1000 0.1 1 10 100
VDS - Drain to Source Voltage - V ID - Drain Current - A

REVERSE RECOVERY TIME vs.

DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000 200 16
ID = 8.0 A VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns

14

150 VDD = 160 V 12

100 V
100 40 V 10

100 8

6
10
50 VDD = 160 V 4
100 V
40 V 2
di/dt = 50A / µs
1 VGS = 0 V
0 0
0.1 1 10 100 0 5 10 15 20

ID - Drain Current - A QG - Gate Charge - nC

4 Data Sheet D13331EJ1V0DS00

 2SK3108

DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs.

SAFE OPERATING AREA CASE TEMPERATURE
40
dT - Percentage of Rated Power - %

PT - Total Power Dissipation - W

100
30
80

60 20

40
10
20

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C TC - Case Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

100

ID(pulse) PW
ited =
Lim 10
ID - Drain Current - A

S(o
n) 10
0 µs
10 RD µs

ID(DC) 1
Po m
s
we 10 3 m
r D 10 m s
iss 0 m s
ip s
at
io
1 n
Li
m
ite
d

TC = 25 ˚C
0.1 Single Pulse
1 10 100 1000
VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1 000
rth(t) - Transient Thermal Resistance - ˚C/W

100 Rth(ch-A) = 62.5˚C/W

10 Rth(ch-C) = 5˚C/W

0.1

Single Pulse
0.01
10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

Data Sheet D13331EJ1V0DS00 5

 2SK3108

SINGLE AVALANCHE ENERGY vs. SINGLE AVALANCHE ENERGY

INDUCTIVE LOAD DERATING FACTOR
100
VDD = 100 V VDD = 100 V
IAS - Single Avalanche Energy - A

VGS = 20 V 0 V VGS = 20 V 0 V
RG = 25 Ω 100 RG = 25 Ω

Energy Defrating Factor - %

Starting Tch = 25˚C IAS 8.0 A

80

10 IAS = 8.0 A 60
EA
S
=5
1m 40
J

20

1 0
0.01 0.1 1 10 25 50 75 100 125 150
L - Inductive Load - mH Starting Tch - Starting Channel Temperature - ˚C

6 Data Sheet D13331EJ1V0DS00

 2SK3108

PACKAGE DRAWING(Unit : mm)

Isolated TO-220 (MP-45F)

10.0±0.3 4.5±0.2
φ 3.2±0.2
2.7±0.2

EQUIVALENT CIRCUIT

Drain
15.0±0.3

3±0.1
12.0±0.2

Body
Gate Diode
4±0.2
13.5 MIN.

Gate
Protection Source
Diode

0.7±0.1 1.3±0.2 2.5±0.1

1.5±0.2 0.65±0.1
2.54 TYP. 2.54 TYP.
1.Gate
2.Drain
3.Source
1 2 3

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.

Data Sheet D13331EJ1V0DS00 7

 2SK3108

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M7 98. 8