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P-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY FEATURES
VDS (V) -30 • TrenchFET® Gen IV p-channel power MOSFET
RDS(on) max. () at VGS = 10 V 0.0050 • Enables higher power density
RDS(on) max. () at VGS = 4.5 V 0.0080 • 100 % Rg and UIS tested
Qg typ. (nC) 27
ID (A) 18
Configuration Single

SO-8 Single
APPLICATIONS
D S
• Battery management in mobile devices
D 5
D 6 • Adapter and charger switch
D 7 G
• Battery switch
8
• Load switch

4 D
3 G P-Channel MOSFET
2 S
1 S
S
Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -30
V
Gate-source voltage VGS ± 20
TC = 25 °C -18
TC = 70 °C -13
Continuous drain current (TJ = 150 °C) ID
TA = 25 °C -11
TA = 70 °C -8
A
Pulsed drain current (t = 100 μs) IDM -145
TC = 25 °C -5
Continuous source-drain diode current IS
TA = 25 °C -2.8 b, c
Single pulse avalanche current IAS -25
L = 0.1 mH
Single pulse avalanche energy EAS 31.2 mJ
TC = 25 °C 5.6
TC = 70 °C 3.6
Maximum power dissipation IP W
TA = 25 °C 3.1 b, c
TA = 70 °C 2 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150
°C
Soldering recommendations (peak temperature) c 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t  10 s RthJA 34 40
°C/W
Maximum junction-to-case (drain) Steady state RthJF 18 22
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bo ttom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 85 °C/W
g. TC = 25 °C

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -30 - - V
VDS temperature coefficient VDS/TJ ID = -10 mA - -17 -
mV/°C
VGS(th) temperature coefficient VGS(th)/TJ ID = -250 μA - 5.5 -
Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA -1 - -2.2 V
Gate-source leakage IGSS VDS = 0 V, VGS = +16 / -20 V - - 100 nA
VDS = -30 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS μA
VDS = -30 V, VGS = 0 V, TJ = 70 °C - - -15
On-state drain current a ID(on) VDS  -10 V, VGS = -10 V -40 - - A
VGS = -10 V, ID = -15 A - 0.0050 -
Drain-source on-state resistance a RDS(on) 
VGS = -4.5 V, ID = -10 A - 0.0080 -
Forward transconductance a gfs VDS = -15 V, ID = -15 A - 81 - S
Dynamic b
Input capacitance Ciss - 3490 -
Output capacitance Coss VDS = -15 V, VGS = 0 V, f = 1 MHz - 1420 - pF
Reverse transfer capacitance Crss - 70 -
VDS = -15 V, VGS = -10 V, ID = -10 A - 56 84
Total gate charge Qg
- 27 41
nC
Gate-source charge Qgs VDS = -15 V, VGS = -4.5 V, ID =-10 A - 9.4 -
Gate-drain charge Qgd - 8.2 -
Gate resistance Rg f = 1 MHz 1.5 3.5 6 
Turn-on delay time td(on) - 15 30
Rise time tr VDD = -15 V, RL = 1.5 , ID  -10 A, - 6 12
Turn-off delay time td(off) VGEN = -10 V, Rg = 1  - 39 78
Fall time tf - 10 20
ns
Turn-on delay time td(on) - 34 68
Rise time tr VDD = -15 V, RL = 1.5 , ID  -10 A, - 86 172
Turn-off delay time td(off) VGEN = -4.5 V, Rg = 1  - 31 62
Fall time tf - 22 44
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS TC = 25 °C - - -5
A
Pulse diode forward current ISM - - -150
Body diode voltage VSD IS = -5 A, VGS = 0 V - -0.73 -1.1 V
Body diode reverse recovery time trr - 44 88 ns
Body diode reverse recovery charge Qrr - 41 82 nC
IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C
Reverse recovery fall time ta - 19 -
ns
Reverse recovery rise time tb - 25 -
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

150 10000 150 10000

VGS = 10 V thru 5 V
120 VGS = 4 V 120
ID - Drain Current (A)

ID - Drain Current (A)

1000 1000
90 90

2nd line

2nd line
1st line

1st line
2nd line

2nd line
TC = 25 °C
60 60
100 100

30 VGS = 3 V 30
TC = 125 °C
TC = -55 °C
VGS = 2 V
0 10 0 10
0 1 2 3 4 5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
2nd line 2nd line

Output Characteristics Transfer Characteristics

Axis Title Axis Title

0.015 10000 4500 10000

Ciss
RDS(on) - On-Resistance (Ω)

0.012 3600
C - Capacitance (pF)

1000 1000
0.009 2700
2nd line

2nd line
1st line

1st line
2nd line
2nd line

VGS = 4.5 V
Coss
0.006 1800
100 100

0.003 VGS = 10 V 900

Crss

0 10 0 10
0 20 40 60 80 100 0 6 12 18 24 30
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
2nd line 2nd line

On-Resistance vs. Drain Current and Gate Voltage Capacitance

Axis Title Axis Title

10 10000 1.6 10000
RDS(on) - On-Resistance (Normalized)

ID = 15 A
VGS - Gate-to-Source Voltage (V)

ID = 10 A
8 1.4
VGS = 10 V
1000 1000
6 1.2
2nd line

2nd line
1st line

1st line
2nd line

2nd line

VGS = 4.5 V
4 1.0
VDS = 10 V, 15 V, 20 V 100 100

2 0.8

0 10 0.6 10
0 12 24 36 48 60 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
2nd line 2nd line

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title Axis Title

100 10000 1.0 10000

10 0.7 ID = 250 μA
IS - Source Current (A)

TJ = 150 °C

VGS(th) - Variance (V)

1000 1000
1 TJ = 25 °C 0.4

2nd line

2nd line
1st line

1st line
2nd line

2nd line
ID = 5 mA
0.1 0.1
100 100

0.01 -0.2

0.001 10 -0.5 10
0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150
VSD - Source-to-Drain Voltage (V) TJ - Temperature (°C)
2nd line 2nd line

Source-Drain Diode Forward Voltage Threshold Voltage

Axis Title Axis Title

0.020 10000 150 10000

ID = 15 A
RDS(on) - On-Resistance (Ω)

0.016 120

1000 1000
Power (W)

0.012 90
2nd line

2nd line
2nd line
1st line

1st line
2nd line

TJ = 125 °C
0.008 60
100 100

0.004 TJ = 25 °C 30

0 10 0 10
0 2 4 6 8 10 0.001 0.01 0.1 1 10
VGS - Gate-to-Source Voltage (V) Time (s)
2nd line 2nd line

On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient

Axis Title
1000 10000
IDM limited

100
ID - Drain Current (A)

ID limited
100 μs1000
10
2nd line
1st line
2nd line

1 ms
Limited by RDS(on) (1) 10 ms
1
100 ms100
1s
0.1 10 s
TA = 25 °C DC
Single pulse BVDSS limited
0.01 10
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
(1) VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
32.0 10000

25.6

ID - Drain Current (A)

1000
19.2

2nd line
1st line
2nd line
12.8
100

6.4

0 10
0 30 60 90 120 150
TC - Case Temperature (°C)
2nd line

Current Derating a

Axis Title Axis Title

7.0 10000 2.0 10000

5.6 1.6

1000 1000
Power (W)

Power (W)

4.2 1.2
2nd line

2nd line
2nd line

2nd line
1st line

1st line
2.8 0.8
100 100

1.4 0.4

0 10 0 10
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)
2nd line 2nd line

Power, Junction-to-Case Power, Junction-to-Ambient

Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title
1 10000
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

Notes: 1000
0.2

2nd line
1st line
PDM
0.1 0.1
t1
0.05 t2
t 100
1. Duty cycle, D = t1
0.02 2
2. Per unit base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA (t)
Single pulse
4. Surface mounted
0.01 10
0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Ambient

Axis Title
1 10000
Duty Cycle = 0.5
Normalized Effective Transient

0.2
Thermal Impedance

0.1 1000

2nd line
1st line
0.1
0.05
100
0.02

Single pulse
0.01 10
0.0001 0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
2nd line

Normalized Thermal Transient Impedance, Junction-to-Case

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SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)

(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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