Si2351DS

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

MOSFET PRODUCT SUMMARY FEATURES

• Halogen-free Option Available
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.)
• TrenchFET® Power MOSFET
0.115 at VGS = - 4.5 V - 3.0 • PWM Optimized
- 20 3.2 nC RoHS
0.205 at VGS = - 2.5 V - 2.2 • 100 % Rg Tested COMPLIANT

TO-236
(SOT-23)

G 1

3 D

S 2

Top View
Si2351DS (G1)*
* Marking Code

Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)

Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS ± 12
TC = 25 °C - 2.8
TC = 70 °C - 2.4
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C - 2.2b, c
TA = 70 °C - 1.8b, c A
Pulsed Drain Current IDM - 10
TC = 25 °C - 2.0
Continuous Source-Drain Diode Current TA = 25 °C IS
- 0.91b, c
TC = 25 °C 2.1
TC = 70 °C 1.5
Maximum Power Dissipation PD W
TA = 25 °C 1.0b, c
TA = 70 °C 0.7b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d ≤5s RthJA 90 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 73702 www.vishay.com

S-80642-Rev. C, 24-Mar-08 1
Si2351DS
Vishay Siliconix

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VDS = 0 V, ID = - 250 µA - 20 V
VDS Temperature Coefficient ΔVDS/TJ - 16.7
ID = - 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.1
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA
VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10
On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 4.5 V - 10 A
VGS = - 4.5 V, ID = - 2.4 A 0.092 0.115
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 2.5 V, ID = - 1.8 A 0.164 0.205
Forward Transconductancea gfs VDS = - 10 V, ID = - 2.4 A 5.5 S
Dynamicb
Input Capacitance Ciss 250
Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz 80 pF
Reverse Transfer Capacitance Crss 55
VDS = - 10 V, VGS = - 5.0 V, ID = - 2.4 A 3.4 5.1
Total Gate Charge Qg
3.2 5
nC
Gate-Source Charge Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 2.4 A 0.5
Gate-Drain Charge Qgd 1.4
Gate Resistance Rg f = 1 MHz 8.5 13 Ω
Turn-On Delay Time td(on) 9 14
Rise Time tr VDD = - 10 V, RL = 5.26 Ω 30 45
ns
Turn-Off Delay Time td(off) ID ≅ - 1.9 A, VGEN = - 4.5 V, RG = 1 Ω 32 48
Fall Time tf 16 24
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 2.0
A
Pulse Diode Forward Currenta ISM - 10
Body Diode Voltage VSD IS = - 2.0 A - 0.8 - 1.2 V
Body Diode Reverse Recovery Time trr 17 26 ns
Body Diode Reverse Recovery Charge Qrr 5 8 nC
IF = - 2.0 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 14
Reverse Recovery Rise Time tb 3 ns

Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com Document Number: 73702

2 S-80642-Rev. C, 24-Mar-08
 Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 5
VGS = 5 thru 3 V

8 4
ID - Drain Current (A)

I D - Drain Current (A)

VGS = 2.5 V
6 3

4 2

VGS = 2 V
TC = 25 °C
2 1
TC = 125 °C
VGS = 1.5 V
TC = - 55 °C
0 0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.30 500

0.25
R DS(on) - On-Resistance (m )

VGS = 2.5 V
400
C - Capacitance (pF)

0.20
300 Ciss

0.15

200
VGS = 4.5 V
0.10
Coss
100
0.05
Crss

0.00 0
0 2 4 6 8 10 0 4 8 12 16 20

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

5 1.6

ID = 3.0 A VGS = 4.5 V, ID = 2.4 A

VG S - Gate-to-Source Voltage (V)

4 1.4
R DS(on) - On-Resistance
(Normalized)

3 VDS = 10 V 1.2

VGS = 2.5 V, ID = 1.8 A

2 VDS = 16 V 1.0

1 0.8

0 0.6
0 1 2 3 4 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

Document Number: 73702 www.vishay.com

S-80642-Rev. C, 24-Mar-08 3
Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

10 0.36

R DS(on) - Drain-to-Source On-Resistance (Ω)

ID = 2.4 A

0.28
I S - Source Current (A)

TA = 150 °C

0.20
1 TA = 25 °C

TA = 125 °C

0.12

TA = 25 °C
0.1 0.04
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.2 10

1.1 8

1.0 TA = 25 °C
VGS(th) (V)

6
Power (W)

Single Pulse
ID = 250 µA
0.9

4
0.8

2
0.7

0.6 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100

Limited by RDS(on)*
10

10 ms
I D - Drain Current (A)

1 100 ms
1s

0.1 10 s
DC
TA = 25 °C
Single Pulse
0.01

0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which R DS(on) is specified
Safe Operating Area

www.vishay.com Document Number: 73702

4 S-80642-Rev. C, 24-Mar-08
 Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4 2.4

3 1.8
I D - Drain Current (A)

Power (W)
2 1.2

1 0.6

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating* Power Derating, Junction-to-Foot

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

Document Number: 73702 www.vishay.com

S-80642-Rev. C, 24-Mar-08 5
Si2351DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 130 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?73702

www.vishay.com Document Number: 73702

6 S-80642-Rev. C, 24-Mar-08
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2019 1 Document Number: 91000