SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

CONCEPTUAL BASED QUESTIONS 8. In semiconductors at a room temperature

1) The valence band is partially empty and the
INTRINSIC AND EXTRINSIC
conduction band is partially filled.
SEMICONDUCTORS 2) The valence band is completely filled and the
1. Which property makes the crystalline solids conduction band is partially filled
to have sharp melting point? 3) The valence band is completely filled
1) Equal strength of all the interatomic bonds 4) The conduction band is completely empty
2) anisotropic 9. Identify the property which is not characteristic
3) long range order 4) short range order
for a semiconductor?
2. Which of the following is not a property of
1) at a very low temperatures, it behaves like an
crystalline substance
insulator
1) sharp melting point 2) bounded by flat surface
2) at higher temperatures two types of charge
3) isotropic 4) long range order
3. A strip of copper and another of germanium carriers will cause conductivity
are cooled from room temperature to 80K. The 3) the charge carriers are electrons and holes in the
resistance of: valence band at higher temperatures
1) each of these decreases 4) the semiconductor is electrically neutral.
2) copper strip decreases and that of germanium 10. Carbon, silicon, and germanium have four
decreases valence electrons each. At room temperature,
3) copper strip decreases and that of germanium which one of the following statements is most
increases appropriate?
4) each of these increases 1) The number of free conduction electrons is
4. The difference in the variation of resistance negligibly small in all the three.
with temperature in a metal and a 2) The number of free electrons for conduction is
semiconductor arises essentially due to the significant in all the three.
difference in the : 3) The number of free electrons for conduction is
1) crystal structure significant only in Si and Ge but small in C.
2) variation of the number of charge carriers with 4) The number of free conduction electrons is
temperature significant in C but small in Si and Ge
3) type of bonding 11. The relation between number of free electrons
4) variation of scattering mechanism with (n) in a semiconductor and temperature (T) is
temperature given by
5. The manifestation of band structure in solids 1) n  T 2) n  T 2 3) n  T 4) n  T 3/2
is due to :
1) Heisenberg’s uncertainty principle 12. An electrically neutral semi conductor has
2) Pauli’s exclusive principle 1) equal amounts of negative and positive charges
3) Bohr’s correspondence principle 2) no minority charge carriers
4) Boltzman’s law 3) no majority charge carriers 4) no free charges
6. A solid which is not transparent to visible light 13. There is no hole current in conductors because
and whose conductivity increases with they have
temperature is formed by: 1) high conductivity 2) high electron density
1) ionic bonding 2) covalent bonding 3) no valence band
3) vander Wall’s bonding 4) metallic bonding 4) overlapping of valence and conduction bands.
7. To a germanium sample, traces of gallium are 14. In the insulators
added as an impurity. The resultant sample 1) the valence band is partially filled with electrons
would behave like : 2) the conduction band is partially filled with
1) A conductor 2) A p-type semiconductor electrons
3) A n-type semiconductor 4) An insulator 3) the conduction band is partially filled with
electrons and valence band is empty
4) the conduction band is empty and the valence

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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
band is filled with electrons. donor atoms
15. In semiconductors the forbidden energy gap 24. Which of the following statements is not true?
between V.B. and C.B. is of the order of 1) the resistance of intrinsic semiconductors
1) 1eV 2) 5eV 3) 1 keV 4) 1MeV decreases with increase of temperature.
16. The level formed due to impurity atom, in the 2) doping pure Si with trivalent impurities give p-
forbidden energy gap, very near to the valence type semiconductors
band in a p-type semicoductor is called 3) the majority charge carries in n-type
1) acceptor level 2) donar level semiconductors are holes
3) conduction level 4) forbidden level 4) a p-n junction can act as a semiconductor diode
17. The bond in semiconductors is 25. p-type semi conductor is
1) covalent 2) ionic 3) metallic 4) hydrogen 1) negatively charged 2) positively charged
18. On increasing temperature, the conductivity 3) neutral 4) may be positive or negative
of pure semiconductors 26. n-type semi conductor is
1) negatively charged 2) positively charged
1) decreases 2) increases
3) neutral 4) may be positive or negative
3) remains unchanged 4) becomes zero
27. An electric field is applied across a semi
19. The mobility of free electrons is greater than
conductor. Let n be the number of charge
that of free holes because
carriers. As temperature increases, n will
1) they carry negative charge 1) increase 2) decrease
2) they are light 3) does not change 4) may increase or decrease
3) their mutual collisions are less 28. In a n - type semiconductor , the fermi energy
4) they require low energy to continue their motion level lies
20. A semiconductor at 0 K behaves as 1) in the forbidden energy gap nearer to the
1) conductor 2) insulator conduction band.
3) super conductor 4) extrinsic semiconductor 2) in the forbidden energy gap nearer to the valence
21. Carbon, Silicon, and Germanium have four band.
valence electrons each. These are 3) in the middle of forbidden energy gap
characterised by valence and conduction bands 4) outside the forbidden energy gap
separated by energy band gap respectively 29. An n-type and p-type silicon can be obtained
by doping pure silicon with
equal to  Eg C ,  Eg S i and  Eg Ge .Which of the 1) Arsenic and phosphrous 2) Indium and aluminium
following statement is true? 3) Phosphorous and indium 4) aluminium and boron
30. The width of forbidden gap in silicon crystal is
1)  Eg  S i   Eg Ge   Eg C 1.1 ev. When the crystal is converted into a n-
type semiconductor the distance of fermi level
2)  Eg C   Eg Ge   Eg  S i from conduction band is
1) Greater than 0.55eV 2) Equal to 0.55 eV
3)  Eg C   Eg  S i   Eg Ge 3) lesser than 0.55eV 4) Equal to 1.1 eV
31. In extrinsic semiconductors
4)  Eg C   Eg  S i   Eg Ge 1) the conduction band and valence band overlap
22. The valency of impurity element for making 2) the gap between conduction band and valence
p-type semiconductor is band is near about 16eV
3) the gap between conduction band and valence
1) 5 2) 4 3) 3 4) 7
band is near about 1eV
23. In n-type semiconductors the electron
4) The gap between conduction band and valence
concentration is equal to
band will be 100eV and more
1) density of donor atoms
32. The element that can be used as acceptor
2) density of acceptor atoms impurity to dope silicon is
3) density of both type of atoms 1) Antimony 2) Arsenic
4) neither density of acceptor atoms nor density of
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3) Boron 4) phosphorous 1) 1:1 2) 1: 2 3) 2 :1 4) 1 : 3

33. Among the following, the wrong statement in 42. To obtain n-type extrinsic semiconductor, the
the case of semiconductor is impurity element to be added to germanium
1) Resistivity is in between that of a conductor and should be of valency
insulator 1) 2 2) 5 3) 4 4) 3
2) Temperature coefficient of resistance is negative 43. The majority carriers in a p-type semi-
3) Doping increases conductivity conductor are........
4) At absolute zero temperature it behaves like 1) Electrons 2) Holes 3) Both 4) Impurities
a condutor 44. The objective of adding impurities in the
34. The value indicated by fermi energy level in extrinsic semiconductor is
an intrinsic semiconductor is 1) to increase the conductivity of the semiconductor
1) the average energy of electrons and holes 2) to increase the density of total current carries
2) the energy of electrons in conduction band 3) to increase the density of either holes or electrons
3) the energy of holes in valence band but not both
4) the energy of forbidden region 4) to eliminate the electron -hole pairs produced in
35. The conduction band and valency band of a intrinsic semiconductor.
good conductors are 45. In intrinsic semiconductor conductivity is
1) well separated 2) just touch 1) low 2) average 3) high 4) very low
3) very close 4) overlap 46. In intrinsic semiconductor conductivity is due
36. Two pieces one of germinium and the other of to
aluminium are cooled from T1K to T2K. The 1) doping 2) breaking of covalent bonds
resistance of 3) free electrons 4) holes
1) aluminium increases and that of germanium 47. When the conductivity of a semi conductor is
decrease only due to breaking of covalent bonds, the
2) each of them decreases semi conductor is called
3) aluminium decreases and that of germanium 1) n-type 2) p-type 3) intrinsic 4) extrinsic
increases 48. Assertion (A) : C,Si and Ge have 4 Valancy
4) each of them increases each but C is an insulator where as Si and Ge
37. In intrinsic semiconductor at room are semi conductors
temperature the no. of electrons and holes are Reason (R) : Energy gap is least for Ge, less
1) equal 2) zero 3) unequal 4) infinite for Si compared to C, So that free electrons
38. Band gap in insulator is of the order for conduction in Ge and Si are significant but
1) 6 eV 2) 0.60 eV 3) –6 eV 4) 0eV negligible small for C.
39. In p-type semiconductor conduction is due to 1) A, R are true and R explains A correctly
1) greater number of holes and less number of 2) A, R are true and R do not explain A correctly
electrons 3) A is true, but R is false 4) R is true, but A is false
2) only electrons 3) only holes JUNCTION DIODE
4) greater number of electrons and less number
49. The potential barrier at PN junction is due to
of holes
1) fixed acceptor and donor ions on either side of
40. In an intrinsic semiconductor, the fermi nergy
the junction
level is
2) minority carriers on either side of the junction
1) nearer to valence band than conduction band
3) majority carriers on either side of the junction
2) equidistant from conduction band and valence
4) both majority and minority carriers on either side
band
of junction
3) nearer to conduction band than valence band
50. A PN junction diode cannot be used
4) bisecting the conduction band
1) as rectifier
41. With increase in temperature in an intrinsic
2) for converting light energy to electric energy
semiconducter the ratio of conduction
3) for getting light radiation
electrons and holes is

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4) for increasing the amplitude of an ac signal 3) amplifier 4) an off switch
51. A full wave rectifier along with the output is 59. The main cause of avalenche breakdown is
shown in fig. the contributions from the diode 1) collision by ionisation
(2)are 2) high doping
1 D 3) recombination of electrons and holes
AC O/P
4) low doping
 C 60. The main cause of Zener breakdown is
1) the base semiconductor being germanium
D
2) production of electron - hole pairs due to thermal
2

exitation
Full Wave Rectifier
3) low doping 4) high doping
61. When p-n junction is foward biased, the current
Vi
across the junction is mainly due to
1) diffusion of charges 2) drifting of charges
3) both diffusion and drifting of charges
I/P
4) holes only
62. The current through any p-n junction is due to
A B C D
a) drift of charge carriers
V
0 b) diffusion of charge carriers
O/P c) different concentrations of same type of
charge carriers in different regions
1) C 2) A,C 3) B, D 4) A,B,C,D d) same concentrations of same type of charge
52. A full-wave rectifier is used to convert ‘n’ carriers in different regions
Hz a.c into d.c,then the number of pulses per 1) a,b and c 2) a and b only
second present in the rectified voltage is. 3) only d 4) a,b,c,d
1) n 2) n/2 3)2n 4)4n 63. The thickness of depletion layer is
53. If the input frequency of half-wave rectifier approximately
is n Hz ac, then its output is 1) 1  m 2) 1mm 3) 1cm 4) 1m
1) a constant dc 2) n/2 Hz pulsating dc 64. The depletion region is
3) n Hz pulsating dc 4) 2n Hz pulsating dc 1) region of opposite charges
54. p-n junction diode acts as
2) neutral region
1) ohmic resistance 2) non-ohmic resistance
3) region of infinite energy
3) both 1 and 2 4) amplifier
4) region of free current carriers
55. The process of converting alternating current
into direct current is known as 65. The diffusion current in a p-n junction is greater
1) modulation 2) amplification than the drift current when the junction is
3) detection 4) rectification 1) forward biased
56. On increasing reverse voltage in a p-n junction 2) reverse biased
diode the value of reverse current will 3) un biased
1) gradually increases 4) both forward and reverse biased
2) first remains constant and then suddenly increase 66. Germanium diode
3) remains constant 4) gradually decrease 1) may be used as rectifier because it offers a
57. In forward bias the depletion layer behaves relatively low resistance for forward bias and very
like high resistance for reverse bias.
1) an insulator 2) a conductor 2) may be used as a rectifier because it offers a
3) a semiconductor 4) capacitor relatively high resistance for forward bias and very
58. p-n junction in reverse bias behaves like low resistance for reverse bias.
1) an inductor 2) a condenser 3) cannot be used as a rectifier

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4) may be used as an amplifier 3) C1  C2 4) C1  C2  0

67. The output of the given circuit in Fig. 72. Consider the following statements A and B and
R identify the correct answer
1) : Germanium is preferred over silicon in the
vm sin t  construction of zener diode.
2) : Germanium has high thermal stability than
silicon in the construction of Zener diode
1) would be zero at all times 1) Both 1 & 2 are true 2) Both 1 & 2 are false
2) would be like a half-wave rectifier with positive 3) 1 is true but 2 is false 4) 1 is false but 2 is true
cycles in output 73. A Zener diode when used as a voltage regulator
is connected
3) would be like a half-wave rectifier with negative
(a) in forward bias (b) in reverse bias
cycles in output
(c) in parallel to the load
4) would be like that of a full-wave rectifier (d) in series to the load
68. Diode is forward biased and the applied voltage 1) (a) and (b) are correct 2) (b) and (c) are correct
is greater than the potential barrier then 3) (a) only is correct 4) (d) only is correct
I) resistance of the junction in the forward bias 74. Consider the following statements A and B and
decreases identify the correct answer
II) potential barrier remains same (A) A Zener diode is always connected in reverse
III) width barrier remains decreases bias to use it as voltage regulator
IV)p-type is at higher potential than the n-type (B) The potential barrier of a p - n junction lies
1) all are true 2)all are false between 0.1 to 0.3V, approximately
3) I,III,IV are true 4)I,II, III are true 1) A and B are correct 2) A and B are wrong
69. When a junction diode is reverse biased, the 3) A is correct but B is wrong
4) A is wrong but B is correct
current called drift current is due to
75. Consider the following statements A and B
1) majority charge carriers of both n&p sides
identify the correct of the give answer.
2) minority charge carriers of both n&p sides A) The width of the depletion layer in a p-n
3) holes of both n &p sides junction diode increases in forward bias.
4) conduction band electrons of n-side only B) In an intrinsic semiconductor the fermi
70. Among the following one statement is not energy level is exactly in the middle of the
correct when a junction diode is in forward bias forbidden gap
1) the width of depletion region decreases 1) A is true and B is false 2) Both A and B are false
2) free electron on n- side will move towards the 3) A is false and B is true 4) Both A and B are true
junction 76. The potential in the depletion layer due to
3) holes on p -side move towards the junction 1) Electrons 2) Holes
4) electron on n- side and holes on p-side will move 3)Ions 4) Forbidden band
away from junction 77. Pickout the incorrect statement regarding
71. Consider a.p-n junction as a capacitor, formed reverse saturation current in the p-n junction
diode
with p and n material acting as thin metal
1) this current doubles for every 1000C rise of
electrodes and depletion layer width acting as
temperature
seperation between them. Basing on this
2) this current is due to minority carriers
assume that a n-p-n transistor is working as 3) the current carriers are produced by thermal
an amplifier in CE configuration. If C1 and C2 agitation
are base-emiter and collector emitter junction 4) reverse saturation current is also known as
capacitances, then : leakage current
78. When the p-n junction diode is reverse biased,
1) C1  C2 2) C1  C2
the thickness of the depletion layer

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1) increases 2) decreases 2) Resistance of deplection layer becomes less
3) becomes zero 4) remains constant 3) Due to high doping 4) Due to less doping
79. p-n junction diode can be used as 86. Application of a forward bias to a p-n junction:
1) amplifer 2) detector 3) oscillator 4) capacitor 1) increases the number of donors on the n-side
80. A p-n junction diode is reverse biased.Then 2) increases the electric field in the depletion zone
1) more current flows 3) increases the potential difference across the
2) the barrier potential decreases depletion zone
3) the barrier potential increases 4) widens the depletion zone
4) resistance offered is low 87. In a p-n junction diode, not connected to any
81. In the middle of the depletion layer of reverse circuit
biased p-n junction, the : 1) the potential is the same everywhere
1) electric field is zero 2) potential is maximum 2) the p-type side is at a higher potential than the n-
3) electric field is maximum 4) potential is zero type side.
82. When p-n junction diode is forward biased then 3) there is an electric field at the junction directed
1) the depletion region is reduced and barrier height from the n-type side to the p-type side.
is increased 4) there is an electric field at the junction directed
2) the depletion region is widened and barrier height from the p-type side to the n-type side.
is reduced 88. Select the correct statement from the following:
3) both the depletion region and barrier height are 1) A diode can be used as a rectifier
reduced
2) A triode cannot be used as a rectifier
4) both the depletion region and barrier height are
increased 3) The current in a diode is always proportional to
83. In a p-n junction photo cell, the value of the the applied voltage
photo electromotive force produced by 4) The linear portion of the I -V characteristic of a
monochromatic light is proportional to triode is used for amplification without distortion
1) The barrier voltage at the p-n junction. 89. When a p-n junction diode is forward-biased,
2) The intensity of the light falling on the cell energy is released at the junction due to the
3) The frequency of the light falling on the cell. recombination of electrons and holes. This
4) The voltage applied at the p-n junction energy is in
84. In Fig. V0 is the potential barrier across a 1) Visible region 2) Infrared region
p-n junction, when no battery is connected 3) UV region 4) X-ray region
across the junction: 90. In Fig. assuming the diodes to be ideal:
1 D1
2 A R
-10V
3

V0 D2

1) 1 and 3 both correspond to forward bias of

junction 1) D1 is forward biased and D2 is reverse biased
2) 3 corresponds to forward bias of junction and 1 and hence current flows from A to B
corresponds to reverse bias of junction
3) 1 corresponds to forward bias and 3 2) D2 is forward biased and D1 is reverse biased
corresponds to reverse bias of junction and hence no current flows from B to A and vice
4) 3 and 1 both correspond to reverse bias and 3 versa
corresponds to reverse bias of junction
3) D1 and D2 are both forward biased and hence
85. There is a sudden increase in current in zener
diode is current flows from A to B
1) Due to rupture of bonds
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4) D1 and D2 are both reverse biased and hence semiconductor

C) p-type G) Immobile ions
no current flows from A to B and vice-versa semiconductor
91. A Si and a Ge diode has identical physical D) Depletion layer H) Fermi energy
dimensions.The band gap in Si is larger than levels is at the
that in Ge.An identical reverse bias is applied centre of forbidden
across the diodes. energy gap
1)The reverse current in Ge is larger than that in Si I) Fermi energy level
2)The reverse current in Si is larger than that in Ge is near the conduction
3)The reverse current is identical in the two diodes band
4)The relative magnitude of the reverse currents A B C D A B C D
cannot be determined from the given data only 1) F E,G H I 2) H E,I F G
92. The correct curve between potential(V) and 3) E F G H,I 4) I H G E,F
distance(d) near p-n junction is 98. Match the following
1) V V
LIST - I LIST - II
n n a. Antimony e. P - type impurity
P P
b. Indium f. N - type impurity
c. Carbon g. not semiconductor
1) d 2) d
d. Silicon h. semiconductor
1)a-f, b-e, c-g, d-h 2)a- e, b- g, c- h, d- f
3) a-g, b-h, c-f, d-e 4) a-h, b-f, c-e, d- g
V V
TRANSISTORS
P n P n 99. The correct relation between current gains 
and  is
3) d 4) d
  1
1)   2)   3)    1    4)  
1 1 
93. The graph given below represents the I-V 100. Transistors are made of
characterstics of a zener diode.Which part of 1) insulators 2) conductors
the characterstics curve is most relavant for 3) alloys 4)doped semi-condcutors
its operation as a voltage regulator. 101. In n-p-n transistor the arrow head on emitter
represents that the conventional current flows
I(mA) from
Forward bias 1) base to emitter 2) emitter to base
Reverse bias
3) emitter to collector 4) base to collector
a
Vz 102. In a junction transistor the emitter, base and
d c b V(V) collector are made of
e 1) extrinsic semi conductors
Current 2) intrinsic semi conductors
3) both 1 and 2 4) metal
I(A) 103. In a transistor
1)ab 2)bc 3)cd 4)de 1) both emitter and the collector are equally doped
2) base is more heavily doped than collector
1) A, R are true and R explains A correctly 3) collector is more heavily doped than the emitter
2) A, R are true and R do not explain A correctly 4) the base is made very thin and is lightly doped
3) A is true, but R is false 104. In a transistor
4) R is true, but A is false 1) length of emitter is greater than that of collector
97. Match List-I with List-2 2) length of collector is greater than that of emitter
LIST-1 LIST-2 3) both emitter and collector have same length
A) Intrinsic E) Donor level 4) any one of emitter and collector can have greater
semiconductor length
B) N-type F) Acceptor level 105. In transistor the emitter current is
1) slightly more than the collector current
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2) slightly less than the collector current base and emitter]
3) equal to the collector current 1)change in I C as I B and VBB are changed
4) equal to the base current
106. In the use of transistor as an amplifier 2)Changes in I C with changes in VCE ( I B  cosntant)
1) the emitter - base junction is reverse biased and 3)changes in I B with changes in VCE
the collector base junction is also reverse biased
2) the emitter - base junction is forward biased and 4)Change in I C as VBE is changed
the collector - base junction is reverse biased 113. In a transistor the base is made very thin and
3) both the junctions are forward biased is lightly doped with an impurity, because
1) to enable the collector to collect about 95% of
4) any of the two junctions may be forward biased.
the holes or electrons coming from the emitter side
107. One way in which the operation of an npn 2) to enable the emitter to emit small number of
transistor differ from that of a pnp transistor holes or electrons
is that 3) to save the transistors from high current effects
1) the emitter junction is reverse biased in npn 4) to enable the base to collect about 95% of holes
2) the emitter junction injects minority carriers intoor electrons coming from the emitter side
the base region of the pnp. 114. A p-n-p transistor is said to be in active region
3) the emitter injects holes into the base of the pnp of operation, When
and electrons into the base region of npn 1) Both emitter junction and collector junction are
4) the emitter injects holes into the base of npn forward biased
108. npn transistors are preferred to pnp transistors 2) Both emitter junction and collector junction are
because they have reverse biased
1) low cost 2) low dissipation energy 3) Emitter junction is forward biased and collector
3) capable of handling large power junction is reverse biased
4) electrons have high mobility than holes and hence 4) Emitter junction is reverse biased and collector
high mobility of energy junction is forward biased
109. A CE transistor amplifies a weak current 115. An n-p-n transistor power amplifier in C-E
signal because collector current is configuration gives
1)  times Ib 2)  times IC 1) Voltage amplification only
3)  times Ib 4)  times IC 2) Current amplification only
110. When a positive voltage signal is applied to 3) Both current and voltage amplification
the base of a common emitter npn amplifier 4) Only power gain of unity
1) The emitter current decreases 116. When n-p-n transistor is used as an amplifier:
2) The collector voltage becomes more positive 1) electrons move from base to collector
3) The collector voltage becomes less positive 2) holes moves from emitter to base
4) The collector current decreases 3) holes move from collector to base
111. In case of common emitter p-n-p transistor 4) holes move from base to emitter
input characteristic is a graph drawn 117. The part of a trasistor which is heavily doped
1) With IC on y-axis and VCE on x-axis keeping IB to produce large number of majority carriers
constant is :
2) With IB on y-axis and VBE on x-axis keeping 1) emitter 2) base
VCE constant 3) collector 4) can be any of the above three
3) With IC on y-axis and IB on x-axis keeping VCE118. When n-p-n transistor is used as an amplifier
constant 1) electrons move from collector to base
2) holes move from collector to base
4) With VBE on y-axis and VCE x-axis keeping IB 3) electrons move from base to emitter
constant 4) holes move from base to emitter
112. The output characterstics of an n-p-n transistor 119. A n-p-n transistor conducts when
represent,[ I C  Collector current, VCE  1) both collector and emitter are positive with
potential difference between collector and respect to the base
2) collector is positive and emitter is negative with
emitter, I B  Base current, VBB  voltage given respect to the base
base; VBE  the potential difference between 3) collector is positive and emitter is at same
potential as the base
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4) both collector and emitter are negative with is forward biased

respect to the base 2) Collector being reverse biased attracts more
120. In a common -base amplifier, the phase electrons
difference between the input signal voltage and 3) Some electrons are lost in base
output voltage is : 4) Collector side is forward biased and emitter side
  is reverse biased.
1) 2)  3) zero 4) 131. When a transistor amplifier having current
4 2
gain of 75 is given an input signal,
121. In a common emitter amplifier, the phase
difference between the input signal voltage and VI  2sin(157t   / 2) , the output signal is
output voltage is found to be VO  200sin(157t  3 / 2) . The
  transistor is connected as:
1) 2) 0 3)  4) 1) A common collector amplifier
2 4
2) A common base amplifier
122. When n-P-n transistor is used as an amplifer
3) A common emitter amplifier 4) An oscillator
1) Electrons move from emitter to collector
132. An oscillator is an amplifier with
2) Holes move from emitter to base
1) A large gain 2) Negative feedback
3) Electrons move form collector to base
3) Positive feedback 4) No feedback
4) Holes move from base to collector
133. In which of the transistor configurations, the
123. In a PNP transistor the base is the N-region.
voltage gain is highest?
Its width relative to the P-region is
1) Common-base 2) Common-emitter
1) smaller 2) larger 3) same 4) not related
3) Common-collector 4) Same in all threee
124. A three terminal device with one terminal
134. A working transistor with its three legs marked
common to both the output and input is called
P, Q, and R is tested using a multimeter to R
1) rectifier 2) transistor 3) diode 4) triode
and the other (positive) terminal to P or Q.
125. Input and output signal of an amplifier in CE
Some resistance is seen on the multimeter.
configuration are always
Which of the following is true for the
1) Equal 2) Inphase
3) Having a phase difference 4) Out of phase transistor?
126. Ge transistor can be operated at a 1) It is a pnp transistor with R as emitter
temperature 2) It is an npn transistor with R as collector
1) upto 900C 2) upto 400C 3) It is an npn transistor with R as base
3) upto 100 C0 0
4) upto 20 C 4) It is pnp transistor with R as collector
127. Transistor amplifier circuit with a feed back 135. Match the following Column I with Column II
circuit is called
1) oscillator 2) detector Column I Column II
3) modulator 4) all n-p-n transistor A
128. A pulsating voltage is a mixture of an a.c
componet and a d.c component. the circuit used
to seperate a.c and d.c component is called
1) an oscillator 2) an amplifier N
p-n-p transistor B
3) a rectifier 4) a filter
129. The  and  of a transistor are always
E C
1)  > 1 ,  <1 2)  < 1 ,  >1 Light emmitting
diode
3)  =  4)   1 C B
130. In case of NPN transistor, emitter current is
always greater than collector current,
Zener diode E C
because: D
1) Collector side is revese biased and emitter side B

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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
1) I-A,II-B,III-C, IV-D 2) I-D, II-A, III-B, IV-C 141. Among the following is not the function of NOT
3) I-C, II-D, III-B, IV-A 4) I-B, II-A, III-C, IV-D gate is
136. Match List-I with List-2 1) stop a signal 2) invert an input signal
List-1 List-2 3) complement a signal
A) Emitter E) Transistor 4) change the logic in a digital circuit
B) Base F) Moderately doped 142. Digital circuit can be made by repetitive use of
C) Collector G) lightly doped 1) OR gates 2) AND gates
D) Transfer of H) Heavily doped 3) NOT gates 4) NAND gates
resistance 143. Among the following one gives output 1 in the
AND gate
I) Largest physical size
1) A = 0, B = 0 2) A = 1, B = 1
A B C D A B C D 3) A = 1, B = 0 4) A = 0, B = 1.
1) F E H,I G 2) G F,I E H 144. Person who use Boolean algebra for describing
3) H G F,I E 4) E H,I G F the operation of logic gates first was
137. Match the following for C E transistor amplifier 1) Boole 2) Shannon 3) Schottky 4) Zener
LIST - I LIST - II 145. NAND and NOR gates are called universal
gates because they
I c 1) are universally available
a. Current gain e. I
b 2) can be combined to produce OR, AND and
NOT gates
I c RL 3) are widely used in the Integrated circuits
b. Voltage gain f. I R
b i 4) can be easily manufactured.
2 146. In positive logic, the logic state 1 corresponds
 I c  RL to
c. Power gain g.  
Ri 1) positive voltage 2) zero voltage
 I b 
3) lower voltage level 4) higher voltage level.
RL 147. In Boolean algebra A + B = Y implies that :
d. Resistance gain h. R 1) sum of A and B is Y
i
1) a-e, b-f, c-g, d-h 2) a- f, b- g, c- h, d-e 2) Y exists when A exists or B exists or both A and
3) a-g, b-h, c-e, d-f 4) a- h, b- e, c- f, d- g B exist
3) Y exists only when A and B both exist
1) If both A and R are correct and R is the correct 4) Y exists when A or B exist but not when both A
explanation of A and B exist.
2) If both A and R are correct and R is not the 148. In the Boolean algebra, the following one is
correct explanation of A wrong
3) If ‘A’ is correct and ‘R’is incorrect 1) 1+0 = 1 2) 0+1=1 3) 1+1=1 4) 0+0 =1
4) If ‘A’ is incorrect and ‘R’is correct 149. In Boolean algebra A.B = Y implies that:
138. Assertion (A) :- Common emiter mode of a 1) product of A and B is Y
transistor is widely used 2) Y exists when A exists or B exists
Reason (R) :-Current gain, voltage gain, and 3) Y exists when both A and B exist but not when
power gain are maximum in C.E mode of a only A or B exists
transistors. 4) Y exists when A or B exists but not both A and B
139. Assertion (A) :- Transistor in C.E. mode can exist.
be used as amplifier 150. In the Boolean algebra, the following one is
Reason (R) :- A small wrong
change in base current produces a relatively 1) 1.0 = 0 2) 0.1 = 0 3) 1.1 = 0 4) 1.1 = 1
large change in collector current 151. The following truth table is for
LOGIC GATES A B Y
140. In the Binary number system the number 100 1 1 0
represents : 1 0 1
1) one 2) three 3) four 4) hundred 0 1 1
0 0 1
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1) NAND gate 2) AND gate NOR) gates can produce all the basis or
3) XOR gate 4) NOT gate complicated gates.
152. The output of a 2-input OR gate is zero only 163. Statement-1: NOT gate is also called invertor
when its circuit
1) both inputs are 0 2) either input is 1 Statement-2: NOT gate inverts the input order.
3) both inputs are 1 4) either input is zero. 164. Match the quantities of column I with the
153. Boolean algebra is essentially based on
column II when A=1 and B=0
1) symbols 2) logic 3) truth 4) numbers
Column - I Column - II
154. The value of A  A in the Boolean algebra is
1) A 2) A 3) 0 4) 1 a)  A.B   A (p) A
155. The value of A.A in Boolean algebra is
 
b) A.B  A (q) B
1) 0 2) 1 3) A 4) A
156. The following is NOT equal to 0 in the Boolean c)  A  B  . A (r) A + B
algebra is
1) A.0 2) A.A 3) A.0 4) A  A d)  A  B  .B (s) A.B
157. An AND gate is followed by a NOT gate in 1) a-q,s ; b-p,r ; c-q,s ; d-q,s
series. With two inputs A & B, the Boolean 2) a-p,s ; b-p,s ; c-q,r ; d-r,q
expression for the out put Y will be : 3) a-q,r ; b-p,s ; c-q,r ; d-s,p
1) A.B 2) A + B 3) A+B 4) A.B 4) a-r,s ; b-p,r ; c-q,s ; d-p,s
158. NOR gate is the series combination of CONCEPTUAL BASED QUESTIONS
1) NOT gate followed by OR gate - KEY
2) OR gate followed by NOT gate
01)1 02)3 03)3 04)2 05)2 06)2 07)2
3) AND gate followed by OR gate
4) OR gate followed by AND gate 08)1 09)3 10)3 11)4 12)1 13)4 14)4
159. The gate that has only one input terminal 15)1 16)1 17)1 18)2 19)4 20)2 21)3
1) NOT 2) NOR 3) NAND 4) XOR 22)3 23)1 24)3 25)3 26)3 27)1 28)1
160. AND gate: 29)3 30)3 31)3 32)3 33)4 34)1 35)4
1) It has no equivalence to switching circuit. 36)3 37)1 38)1 39)1 40)2 41)1 42)2
2) It is equivalent to series switching circuit.
43)2 44)3 45)1 46)2 47)3 48)1 49)1
3) It is equivalent to parallel switching circuit
4) It is a mixture of series and parallel switching 50)4 51)3 52)3 53)3 54)2 55)4 56)2
circuit 57)2 58)4 59)1 60)4 61)1 62)1 63)1
161. The gate that can act as a building block for 64)4 65)1 66)1 67)3 68)3 69)2 70)4
the digital circuits is 71)1 72)2 73)2 74)3 75)3 76)3 77)1
1) OR 2) NOT 3) AND 4) NAND
78)1 79)2 80)3 81)3 82)3 83)2 84)2
1) Statement -1 is false, statement -2 is true 85)1 86)1 87)3 88)1 89)2 90)2 91)3
2) statement 1-is true statement -2 is true 92)1 93)4 97)2 98)1 99)1 100)4 101)1
statement -2 is correct explanation of 102)1 103)4 104)2 105)1 106)2 107)3 108)4
statement-1.
3) statement 1-is true statement -2 is true 109)1 110)3 111)2 112)2 113)1 114)3 115)3
statement -2 is not correct explanation of 116)1 117)1 118)4 119)2 120)3 121)3 122)1
statement-1. 123)1 124)2 125)4 126)1 127)1 128)4 129)2
4) statement 1-is true statement -2 is false 130)3 131)3 132)3 133)2 134)3 135)3 136)3
162. Statement -1: NAND or NOR gates are called 137)1 138)1 139)1 140)3 141)1 142)4 143)2
digital building blocks.
144)2 145)2 146)4 147)2 148)4 149)3 150)3
Statement-2: The repeated use of NAND (or
151)1 152)1 153)2 154)4 155)1 156)1 157)4
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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES

158)2 159)1 160)2 161)4 162)2 163)2 164)1 TRANSISTORS

LEVEL-I A 8. In a P-N-P transistor, the collector current is
10 mA. If 90% of the holes reach the collector,
INTRINSIC, EXTRINSIC
then emitter current will be:
SEMICONDUCTORS AND DIODES 1) 13 mA 2) 12 mA 3) 11 mA 4) 10 mA
1. The electrical conductivity of a semiconductor 9. A transistor has a base current of 1mA and
increases when electomagnetic radiation of emitter current 100mA. The current transfer
wavelength shorter than 2480nm is incident on ratio will be
it. The band gap in (eV) for the semiconductor 1) 0.9 2) 0.99 3) 1.1 4) 10.1
is 10. When the base -emitter voltage of a transistor
1) 0.7eV 2) 0.5eV 3) 2.5eV 4) 1.2eV connected in the common -emitter mode is
2. Pure Si at 300 K has equal electron changed by 20 mV the collector current is
changed by 25 mA. Find the transconductance.
 ni  concentrations of 1.5 1016 m 3 . Doping by 1) 1.25 1 2) 2.501 3) 0.5   1 4) 5.5   1
indium increases nh 4.5  1022 m 3 . ne in the 11. In a transistor circuit the base current changes
doped Si is from 30  A to 90  A . If the current gain of
1) 5  109 2) 7  109 3) 9  109 4) 8  109 the transistor is 30, the change in the collector
current is
3. In a p-n junction the depletion region is 400nm
1) 4 mA 2) 2 m A 3) 3.6 mA 4) 1.8 mA
wide and electric field of 5  105 Vm 1 exists in 12. The current gain of transistor in a common
it. The minimum energy of a conduction emitter circuit is 40. The ratio of emitter
electron, which can diffuse from n-side to the current to base current is
p-side is
1) 4eV 2) 5eV 3) 0.4eV 4) 0.2eV 1) 40 2) 41 3) 42 4) 43
4. The reverse bias in a junction diode is changed 13. In a common base configuration the emitter
from 5V to 15V then the value of current current changes by 5mA when emitter voltage
changes from 38  A to 88  A. The resistance is changed by 200 mV at a fixed collector to
of junction diode will be base voltage. The input resistance is
1) 4 x 105  2) 3 x105  3) 2 x 105  4) 106  1) 40  2) 1000  3) 2.5  4) 4 
5. A diode made of silicon has a barrier potential 14. For a common base amplifier, the values of
of 0.7V and a currrent of 20mA passes through resistance gain and voltage gain are 3000 and
the diode when a battery of emf 3V and a 2800 respectively. The current gain will be
resistor is connected to it. The wattage of the
1) 0.93 2) 0.83 3) 0.73 4) 0.63
resistor and diode are
1) 0.046W, 0.014W 2) 4.6W, 0.14W 15. In a transistor amplifier  =62,RL= 5000 
3) 0.46W, 0.14W 4) 46W, 14W and internal resistance of the transistor
6. In a half wave rectifier output is taken across is 500  . Its power amplification will be
a 90 ohm load resistor. If the resistance of diode 1) 25580 2) 33760 3) 38440 4)55280
in forward biased condition is 10ohm, the
efficiency of rectification of ac power into dc LOGIC GATES
power is 16. Decimal number 15 is equivalent to the binary
1) 40.6% 2) 81.2% 3) 73.08 % 4) 36.54% number:
7. In a full wave rectifier output is taken across
1) 110001 2) 000101 3) 101101 4) 001111
a load resistor of 800 ohm. If the resistance of
diode in forward biased condition is 200 ohm, 17. Binary number 1001001 is equivalent to the
the efficiency of rectification of ac power into decimal number:
dc power is 1) 37 2) 73 3) 41 4) 32
1) 64.96% 2) 40.6% 3) 81.2% 4) 80% 18. In the Binary number system 1+1=
1)2 2)1 3)10 4)100

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

19. If A = B = 1, then in terms of Boolean algebra 0.812 RL

the value of A.B + A is not equal to 7. 
rf  RL
1) B.A+B 2) B+A 3) B 4) A.B 90 10
8. IC  I E  I E  IC
20. In the Boolean algebra, the following one 100 9
which is not equal to A is
Ic
1) A.A 2) A + A 3) A. A 4) A  A 9.   I , Ie  Ib  Ic
e
21. The logic expression which is NOT true
I c 25  103
in Boolean algebra is g
10. m    1.25 1
VBE 20  103
1) 1  1 .1  0 2) 1  0  .1  0
IC
11. I B  I E  IC and   I
3) 1  0  .1  0 4) 1  1 .1  0 B

IC I E IC  I B IC
12.   I and I  I  1   1
IB
LEVEL-I A - KEY B B B

1) 2 2) 1 3) 4 4) 3 5) 1 6) 4 7) 1 13. VBE = I e Ri
8) 3 9) 2 10) 1 11) 4 12) 2 13) 1 14) 1 14. Av  AR 
15) 3 16) 4 17) 2 18) 3 19) 4 20) 3 21) 4 2 L R
LEVEL-I A - HINTS 15. AP   R
i

hc 6.6  1034  3  10 8 2 15
1. Eg    0.5eV
 
2480  109  1.6  1019  271

2. We know that ofr a doped semiconductor in thermal 2 3 1

16. 1510  1111 2
equilibrium, we have ne nh  ni2 2 1 1
0 1
As per given data, ni  1.5  1016 m 3
6 5 43 2 1 0
nh  4.5  10 22 m 3 17. 10 010 01 2   1 26  0  25  0  2 4  1 23
2
 0  22  0  21  1 20  73
ni2 1.5 10  m
16 6

Thus ne    5.0 109 m 3 18. 1+1=10 in binary number system

nh 4.5 1022 m 3 19. If A=B=1; then A.B+A=1.1+1=1
3. W  Vq =Edq then A.B  1.1  0.1  0
20. A  A  0
 5  105  400  10 9  1.6  10 19 J
21. logic, OR and AND operation
5 105  400 109 1.6 1019 J
 eV
1.6 1019 LEVEL-I B
= 2000 X 10-4 eV = 0.2 eV
V 15  5 10 INTRINSIC, EXTRINSIC
4. R   SEMICONDUCTORS AND DIODES
I  88  38  10 6 50  10 6
1. The electrical conductivity of a semi
106 10 conductor increases when electromagnetic
   105  2  105 
5 5 radiation of wavelength shorter than 1240
5. P = VI (for resistor) nm is incident on it. The forbidden band
energy for the semi conductor is (in eV)
  3  0.7  20  10 3  2.3  20  10 3
1) 0.5 2) 0.97 3) 0.7 4) 1.1
 46  10 3  0.046W
for diode, P  0.7  20  10 3  0.014W
0.406 RL
6. 
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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
12. For a common emitter amplifier, current gain
2. A semiconductor is known to have an electron
is 70. If the emitter current is 8.4mA, then the
concentration of 5  1013 / cm3 and hole base current is
concentration of 8  1012 / cm3 . The 1) 0.236mA 2) 0.118mA 3) 0.59mA 4) 8.3mA
semiconductor is 13. The base current of a transistor is 105  A and
1) n-type 2) p-type 3) intrinsic 4) insulator the collector current is 2.05mA. Then  of the
3. A potential barrier of 0.5V exists across a p-n transistor is
junction. If the width of depletion layer is 10- 1) 1.952 2)19.52 3) 195.2 4) 1952
6
m, then intensity of electric field in this region 14. For a transistor the value of  is 0.9. Its 
will be
value is
1) 1 x 106 V/m 2) 5 x 105 V/m
4 1) 9 2) 0.9 3) 0.09 4) 90
3) 4 x 10 V/m 4) 2 x 106 V/m
15. For a transistor the current amplification factor
4. A p - n junction diode has breakdown voltage
is 0.8. The transistor is connected in common
of 28V. If applied external voltage in reverse
emitter configuration, the change in collector
bias is 40V the current through it is
current when the base current changes by 6mA
1) Zero 2) infinite 3) 10 A 4) 15A
is
5. The value of current in the following diagrams
1) 6mA 2) 4.8mA 3) 24mA 4) 8mA
is (diode assumed to be ideal one)
16. A change of 400mV in base-emitter voltage
-4V 3 -1V causes a change of 200 A in the base current.
1) 0.1 amp 2) 0.01amp 3) 1 amp 4) zero The input resistance of the transistor is
6. A half -wave rectifier is used to convert 1) 1K 2) 6K 3) 2K  4) 8K
50Hz A.C. to D.C. voltage. The number 17. In a common base circuit, if the collector base
of pulses per second in the rectified voltage is changed by 0.6V, collector current
voltage are changes by 0.02mA. The output resistance will
1) 50 2) 25 3) 100 4) 75 be
7. If a full wave rectifier circuit is operating 1) 104  2) 2 x 104  3) 3 x 104  4) 4 x 104 
f r o m 5 0 H z ma i n s , t h e f u n d a me n t a l 18. A common emitter transistor amplifier has a
frequency in the ripple will be current gain of 50. If the load resistance is
1) 25 Hz 2) 50 Hz 3) 70.7 Hz 4) 100 Hz 4k  , and input resistance is 500  , the
TRANSISTORS voltage gain of amplifier is
8. In an npn transistor the base and collector 1) 100 2) 200 3) 300 4) 400
currents are 100  A and 9mA respectively.. LOGIC GATES
Then the emitter current will be 19. Equivalent of decimal number 8 in the binary
1) 9.1mA 2) 18.2mA 3) 3.91  A 4)18.2  A number is
9. A change of 8mA in the emitter current brings 1)10 2)101 3)1000 4)1011
a change of 7.9mA in the collector current. The 20. The equivalent of 110in the decimal number is
change in base current required to have the 1)2 2)4 3)8 4)6
same change in the collector current is 21. If A = 1, B = 0 then the value of A  B in terms
1) 0.01mA 2) 1A 3) 10mA 4) 0.1mA of Boolean algebra is
10. For a p-n-p transistor in CB configuration, the
emitter current IE is 1mA and  = 0.95. The 1) A 2) B 3) B + A 4) A.B
base current and collector current are 22. In the Boolean algebra : A + B =
1) 0.95 mA, 0.05mA 2) 0.05mA, 0.95mA 1) A  B 2) A.B 3) A  B 4) A  B
3) 9.5mA, 0.5mA 4) 0.5mA, 9.5mA 23. The following one represents logic addition is
11. If a change of 100  A in the base current of 1) 1 + 1 = 2 2) 1 + 1 = 10
an n-p-n transistor in CE causes a change of 3) 1 + 1 = 1 4) 1 + 1 = 11
10mA in the collector current, the ac current
24. In the Boolean algebra : A.B = ......
gain of the transistor is
1) 10 2) 100 3) 1000 4)10000 1) A  B 2) A.B 3) A  B 4) A + B

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25. In the Boolean algebra, which gate is 21. If A=1, B=0 then A  B  1  0  0  0  0  B
expressed as Y  A  B
22. A  A and B  B
1) OR 2) NAND 3) AND 4) NOR
26. The truth table for NOT gate is 23. acording to Boolean algebra, 1+1=1
24. According to Demorgon’s theorem
1 1  1 0  1 0  0 1
1)   2) 0 0  3) 0 1  4) 1 1 A B  A B
0 0       
25. Y  A  B is the output of NOR gate
LEVEL-I B - KEY LEVEL-II A
1) 2 2) 1 3) 2 4) 2 5) 4 6) 1 7) 4
INTRINSIC,EXTRINSIC
8) 1 9) 4 10) 2 11) 2 12) 2 13) 2 14) 1
SEMI CONDUCTORS AND DIODES
15) 3 16) 3 17) 3 18) 4 19) 3 20) 4 21) 2
1. Mobilities of electrons and holes in a sample
22) 3 23) 3 24) 1 25) 4 26) 3 of intrinsic germanium at room temperature
LEVEL-I B - HINTS are 0.36m2 / Vs and 0.17 m 2 / Vs .The electron
hc 12000 and hole densities are each equal to 2.5
1. E   e  2. ne  nh
v
 1019 m 3 .The electrical conductivity of
0
 12400 A

V 1024 germanium is
3. E ;  106 4. Since Va  Vb
d 1018 1) 0.47 S / m 2) 5.18 S / m
5. diode does not conduct in reverse bias as V p  Vn 3) 2.12 S / m 4) 1.09 S / m
6. n Hz 7. 2n Hz 8. I e = I b + I c 2. In a p-n junction diode the thickness of
deplection layer is 2 10 6 m and barrier
Ic
9. I B  I E  IC 10.   I , Ie  Ib  Ic potential is 0.3V. The intensity of the electrical
e field at the junction is
Ic Ic 1) 0.6  106 Vm 1 from n to p side
11.   I 12. 
I b and I e  I b  I c
b 2) 0.6  106 Vm 1 from p to n side
Ic  3) 1.5  105Vm 1 from n to p side
13.   I 14. 
b 1  4) 1.5  105Vm 1 from p to n side
 I c 3. A potential barrier V volts exists across a P-N
15.   and   I junction. The thickness of the depletion region
1  b
is ‘d’. An electron with velocity ' v ' approches
16. VBE  I e  Ri 17. VCB  I C  Rout P-N junction from N-side. The velocity of the
RL electron acrossing the junction is
18. AV   R
i 2Ve 2Ve
1) v2  2) v2 
m m
28
2 40 2Ve
3) v 4)
2 20 m
19.  810  1000 2 4. In the following , reverse biased diode is
2 1 0
0 1 +10
-12V R
R
21 0 1) 2)
20. 110 2   1 22  1 21  0  20  6
+5V -10

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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
D1 150

+5V
D2 50
R
3) R 4)
-10V
6V 100
5. Two similar p-n junctions can be connected in 1) 0.01A 2) 0.02A 3) 0.03A 4) 0.04A
three different ways as shown in the figures. 9. 4 ideal diodes are connected as shown in the
The two connections across which the potential circuit the current through 50  is
difference is same are
P N N P
a)
50

P N P N 5V

b)

N P N P 1) 0.1 A 2) 0.5 A 3) 0.6 A 4) 1 A

c) 10. Find the effective resistance between A &
B
1) circuits a and b 2) circuits b and c
3) circuits a and c 4) all the circuits 2R
R
6. If V1 > V2, r is resistance offered by diode in
forward bias then current through the diode is A B
R

V1 V2 2R R

V1  V2 V1  V2 2 3R 2R
1) 0 2) 3) 4) None 1) 2) 3) 4) R
Rr Rr 3R 2 3
7. A PN junction diode when forward biased has 11 The equivalent resistance of the circuit across
a drop of 0.5V which is assumed to be AB is given by
independent of current. The current in excess 2 4
of 10mA through the diode produces large
joule heating which damages the diode. If we
A 5 B
want to use a 1.5V battery to forward bias the
diode, the resistor used in series with the diode
so that the maximum curent does not exceed 4 8
5mA is
P N

0.5V
1) 4 2)13
R 3) 4 or 13 4) 4 zero
1.5V
12. The equivalent resistance between A and B is
 
2
1) 2 x 10  2) 2 x 105  36
3
3) 2 x 10  4) 2 x 104  A B
8. The circuit shown in figure (1) Contains two
diodes each with a forward resistance of 50
ohm and with infinite reverse resistance. If the 18
battery voltage is 6 V, the current through the
100 ohm resistance is.

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

16. The I-V characteristic of an LED is

1) 36 if VA  VB 2) 18 if VA  VB
I
3) Zero if VA  VB and 54 if VA  VB B
G
4) Zero if VA  VB and 54 if VA  VB Y I
R
13. A junction diode is connected to a 10 V source
and 103  rheostat. The slope of load line on
O V O V
the characteristic curve of diode by (in A/V)
V O
1) 10-1 2) 10-2 3) 10-3 4) 10-4 R Y G B

14. A p–n junction (D) shown in the figure can act R I

as a rectifier. An alternating curent source (V) Y
is connected in the circuit G
B I O V

D 17. In the figure shown, the potential drop

V  R across each capacitor is (assume diodes
to be ideal)
C1=4F
I

1) 
E=24V C2=8F
t 
I

2) 1) 12V, 12V 2) 16V, 8V

t 3) zero, 24V 4) 8V, zero
I 18. From the circuit shown below, the maximum
and minimum values of zener diode current are
3)
t
5K IL
I
10K
IZ
4) 80-120V
t 50V
15. In the figure, the input is across terminals A
and C and the output is across B and D. Then 1) 6mA, 5mA 2) 14mA, 5mA
the output is 3) 9 mA, 1mA 4) 3mA, 2mA
B
TRANSISTORS
19. In an n-p-n transistor circuit, the collector
A
current is 10mA. If 90% of the electrons
C emitted reach the collector.
1) the emitter current , the will be 9mA
D 2) the base current will be 1 mA
1) Zero 2) Same as the input 3) the emitter current will be 11mA
3) Full wave rectified 4) Half-wave rectified 4) both 2 & 3
20. The constant  of a transistor is 0.9. What
would be the change in the collector current
corresponding to a change of 4 mA in the base
current in a common emitter arrangement ?
1) 30mA 2) 63mA 3)36 mA. 4) 3.6 mA
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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
21. A voltage amplifier operated from a 12 volt 28. The combinatin of gates shown below yields
battery has a collector load 6k . Calculate the A
maximum collector current in the circuit. X
1) 0.5mA 2) 1 mA 3) 3 mA 4) 2mA B
22. In a transistor circuit shown here the base 1) NAND gate 2) OR gate
curent is 35 A The value of the resistor Rb is 3) NOT gate 4) XOR gate
29. The logic gate having an output of 1 is
E C
0 0
B 1 1
(i) (ii)
RB RL
0 0
+ - 1 1
9V (iii) (iv)

1)124k 2) 257k 1)(iv) 2)(i) 3)(ii) 4)(iii)

30. In a given circuit as shown the two input wave
3) 352k 4) None of these forms A and B are applied simultaneously
23. In a single state transistor amplifier, when the
signal changes by 0.02 V, the base current A
change by 10A and collector current by 1mA.
Y
If collector load RC  2k and RL  10k ,
Calculate Current Gain, Input impedance, B
Effective a.c.load, Voltage gain and Power
gain. The resultant wave form at Y is
1)50, 2k  ,1.66k  , 83, 8300 1) 3)
2) 100, 1k  ,1.66k  , 83, 8300
3) 100, 2k  ,1.66k  , 83, 830
4) 100, 2k  ,1.66k  , 83, 8300 2) 4)

LOGIC GATES 31. The output of the combination of the gates

24. On subtracting 010101 from 101010, we get: shown in the figure below is
1) 001011 2) 001100 3) 010101 4) 011111 A
Y
25. The minimum number of gates required to
realise this expression Z  DABC  DABC is B
1) One 2) Two 3) Eight 4) Five
1) A + A. B 2)  A  B  A  B
26. In the circuit below, A and B represent two
inputs and C represents the output, the circuit
reperesents  
3)  A.B   A.B 4)  A  B   A.B 
A
32. The expression of Y in following circuit is
A Y1
C D
Y2
B B
C Y
1) NOR gate 2) AND gate 3) gate 4) OR gate 1) ABCD 2) A+BCD
27. In the following circuit the output Y becomes 3) A +B+C+D 4) AB+CD
zero for the inputs 33. How many NAND gates are used in an OR
A gate ?
B
1) four 2) two 3) three 4) Five
Y

1) A  1, B  0, C  0 2) A  0, B  1, C  1
3) A  0, B  0, C  0 4) A  1, B  1, C  0
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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

LEVEL-II A - KEY resistance in this case becomes 4 ,if VA  VB the

1) 3 2) 3 3) 2 4) 4 5) 2 6) 2 7) 1 diodes are reveres biased in that case 4,5 and
8) 2 9) 1 10) 2 11) 3 12) 4 13) 3 14) 3 4 are in series
15) 3 16) 4 17) 2 18) 3 19) 4 20) 3 21) 4 12. During FB, diode conducts and during RB, diode
does not conduct.
22) 2 23) 4 24) 3 25) 1 26) 4 27) 4 28) 2
I
29) 4 30) 1 31) 1 32) 3 33) 3 13. Slope =
V
LEVEL-II A - HINTS 14 Given figure is halfwave rectifier
1 15. The given question is based on Bridge Rectifier.
1.   e( e ne   h nh ) This is the most widely used full-wave rectifier. It

makes use of four diodes D1 , D2 , D3 , D4
v 0.3
2.. E  5 1 connected in the four arms of a bridge. Bridge
d 2 106  1.5  10 Vm rectifier does not require a centre-tapped
Its direction from n to p side. transformer.
3. v 2  u 2  2as 17. The diode connected parallel to the battery is
4. For reverse biasing of an ideal diode, the potential reverse bias. so current will not pass through
of n-side should be higher then potential of p-side. it. so total emf divided among C 1 and C 2 and
Only option (4) is satisfying the criterion for reverse in the inverse ratio of their capacities
biasing. q V1  C2 VC2 VC1
5. In (1) one is forward biased and the other one is V ; V1  ,V2 
reverse biased.In (2) both are forward biased C V2 C1 C1  C 2 C1  C2

In (3) both are reverse biased 18. V  iR

total P.D 90 10
6. i 19. I C  I E  I E  I C and I e = I b + I c
total resistence 100 9
E  Vb 1.5  0.5 1   I C 
7. R  3
 3 20.   But    I B 
i 5  10 5 10 1  VCE
3 2
=0.2 ´ 10 = 2´ 10 W  IC   B  9  4mA
8. As per given circuit, diode D1 is forward biased
and offers a resistance of 50 ohm. Diode D2 is Vcc
21. I c  R
reverse biased and as its corresponding resistance L
is infinite, no current flows through it. Thus the
equivalent circuit is as shown in Figure(2). As all 22. V  i R  RB  V  9
 257 k 
the three resistances are in series, the current b b ib 35  10 6
through then is ic
6V 23. (i) Current Gain   i
I b
 50  150  100  
V
BE
D1 150
(ii) Input impedance Ri  i
b
50

6 R R
C L
 A  0.02 A (iii) Effective (ac) load RAC  R  R
300 C L

6V 100
ACR
V 5 (iv) Voltage gain Av   R
in
9. i 
R 50
10. current does not flow through the diode. (v) Power gain, Ap  Av  
11 If VA  VB both the junction diodes are forward
biased and the given circuit diagram becomes a
balanced Wheatestone bridge The equivalent
SR.INTER - IIT ADVANCED - VOL - 4 112
 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES

1 1 1 1) All Ec , Eg & Ev decrease

1 1 01 1 01 1 0
2) All Ec , Eg & Ev increase
24.  0 1 0 10 1
3) Ec and Ev increase, but Eg decrease
0 1 0 10 1
4) Ec and Ev decrease but Eg increase
25. Z = DABC + DA BC
2. A Ge specimen is doped with Al. The

= DA BC + BC = DA 1  concentration of acceptor atoms is

= DA i.e One AND gate.

10 21 atoms / m 3 . Given that the intrinsic
26. It is diode-diode logic ckt of OR gate concentration of electron -hole pairs is
27. Here Y   A.B  .C   A.B   C  A  B  C 1 0 1 9 / m 3 , the concentration of electrons in
the specimen is
Y  0 if A  1, B  1 and C  0 1) 1017 / m3 2) 1015 / m3 3) 10 4 / m3 4) 10 2 / m3
28. X  A.B  A  B  A  B . It is OR gate 3. The following data are for intrinsic germanium
29. Y  A.B  1.0  1  NAND at 300 K. ni  2.4  1019 / m 3 ,
30. Logic of A is 1010, Logic of B is 1001 e  0.39m2 / Vs, h  0.19m2 / Vs. Calculate the
Logic of Y is 0111 conductivity of intrinsic germanium.
31. The input to OR gate is A and A.B. Hence 1) 4.3 Sm 1 2) 1.21Sm1 3) 2.22 Sm 1 4) 4.22 Sm 1
Y = A + BA 4. The diagram correctly represent the
32. Y1  A  D, Y2  A  D  B , direction of flow of charge carriers in the
Y  A D  B C forward bias of p-n junction is
33. For this purpose we use NAND gate in manner as P -- +
+ N P -- +
+ N
1) - + 2) - +
shown. The first two NAND gates are operated as - + - +
NOT gates adn their output are fed to the third The
resulting circuit is OR gate. Here, there gates are P -- + N P -- + N
+ +
used 3) - + 4) - +
- + - +
A A
5. In the figurs shown below
+10V 0V -5V -2V
Y=(A.B)
=A+B Fig. a Fig. b
B
B 1) In both Fig a and Fig b the diodes are
forward biased
2) In both Fig, a and Fig b the diodes are
reverse biased
3) In Fig a the diode is foward biased and in
LEVEL-II B Fig b, the diode is reverse biased
4) In Fig a the diode is reverse biased and in
INTRINSIC,EXTRINSIC fig b, it is forward biased
SEMI CONDUCTORS AND DIODES 6. A P-N junction diode can withstand currents
1. If the lattice constant of this semiconductor up to 10 mA. Under forward bias, The diode
is decreased, then which of the following is has a potential drop of 0.5 V across it which is
correct? assumed to be independent of current.The
Ec Conduction band gap maximum voltage of the battery used to
forward bias the diode when a resistance of
Eg Forbidden band gap 200 is connected in series with it is
1) 2.5V 2) 2.6V 3) 2.7V 4) 2.8V
Ev Valence band gap

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

7. A cell of emf 4.5V is connected to a junction 13. A 220V ac supply is connected between points
diode whose barrier potential is 0.7V. If the A and B (Fig). What will be the potential
external resistance in the circuit is 190  , the difference V across the capacitor?
current in the circuit is A 1) 220V 2) 110V
1) 20 mA 2) 2m A 3) 23mA 4) 200mA 220V ac C V
8. VA and VB denote potentials of A and B, then B 3) 0V 4) 220 2V
the equivalent resistance between A and B in 14 In the circuit shown (Fig). if the diode forward
the adjoining circuit is(ideal diode) voltage drop is 0.3V, the voltage difference
30
between A and B is :
A B A
0.2mA 1) 1.3V
30
5K
2) 2.3V
1) 15 if VA  VB 2) 30 if VA  VB
3) Both 1 and 2 4) neither 1 nor 2 C
3) 0
9. Two ideal junction diodes D1, D2 are connected
5K
as shown in the figure. A 3V battery is
connected between A and B. The current B 4) 0.5V
supplied by the battery if its positive terminal TRANSISTORS
is connected to A is 15. In a n-p-n transistor 1010 electron enter the
D1
10 emitter in 10 -6s. If 2% of the electrons are
lost in the base, the current transfer ratio
20
and the current amplification factor are
D2
1) 0.98, 49 2) 0.49, 49 3) 0.98, 98
A B
4) 0.49, 98
1) 0.1A 2) 0.3 A 3) 0.9 A 4) 90 A 16. In a common base mode of transistor, collector
10. Find the effective resistance between A and B current is 5.488 mA for an emitter current of
2 4
5.60mA. The value of the base current
amplification factor () will be:
A B
1) 48 2) 49 3) 50 4) 51
3 6 17. Current amplification factor of a common base
configuration is 0.88. Find the value of base
1) 5/18  2) 9/5  3) 18/5  4) 5/9  current when the emitter current is 1 mA.
11. The peak voltage in the output of a half-wave 1) 0.12 mA.2)0.1 mA 3) 0.5 mA 4) 0.2 mA
diode rectifier fed with a sinusoidal signal 18. For a transistor    and I B  25A . Find the
without filter is 10V. The d.c. component of the value of IE .
output voltage is 1) 1mA 2) 1.025mA 3) 2mA 4) 1.2 mA
1) 10 / 2 V 2) 10 /  V IC IC
19. In a transistor if I   and I   , If  varies
3) 10 V 4) 20 /  V E B

12. In the figure shown the potential drop across 20 100

the series resistor is between and ,then the value of  lied
21 101
between
2K 1)1-10 2)0.95-0.99 3)20-100 4)200-300
120V 90V 20K 1 1
20. For a transistor x   & y   where  &  are
current gains in common base and common
1) 30 V 2) 60 V 3) 90 V 4) 120 V emitter configuration. Then
1) x  y  1 2) x  y  1
3) 2 x  1  y 4) x  y  0

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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
here, the correct ones are
21. A voltage amplifier operated from a 12 volt
Input Output
battery has a collector load 6k . Calculate the A A B Y
maximum collector current in the circuit. Y 1 0 1 0
2 1 0 0
1) 0.5mA 2) 1 mA 3) 3 mA 4) 2mA B 3 1 1 1
22. A CE amplifier is designed with a transistor 4 0 0 1
having   0.99 . Input impedance is 1 k and 1) All 2) 1 and 2 only
load is 10 k . Voltage gain will be: 3) 1, 2 and 3 only 4) 1, 3 and 4 only
1) 9900 2) 99000 3) 99 4) 990 31. A Truth table is given below. The logic gate
23. In a common emitter amplifier the load having following truth table is
resistance of the output circuit is 792 times the A B Y
resistance of the input circuit. If  = 0.99, 0 0 1
the voltage gain is 1 0 0
1) 79200 2) 39600 3) 7920 4) 3960 0 1 0
24. In a transistor amplifier  = 62, RL = 5000  1 1 0
and internal resistance of the transistor is 1)NAND gate 2)NOR gate
500  . Its power amplification will be 3)AND gate 4)OR gate
1) 25580 2) 33760 3) 38440 4) 55760 32. For a logic 0101 the waveform is
25. The tuned collector oscillator circuit used in
1) 2)
the local oscillator of a radio receiver makes
use of a tuned circuit with L = 60  H and C =
400 pF. Calculate the frequency of oscillations. 3) 4)
1) 1.03 KHz 2) 1.03 Hz
3) 1.03 GHz 4)1.03 MHz 33. For the given combination of gates, if the
logic states of inputs A, B, C are as follows
LOGIC GATES A=B=C=0 and A=B=1, C=0 then the logic
26. When we add binary numbers 111 and 111 we states of output D are
get the binary number:
1) 222 2) 1000 3) 1110 4) 000 A
27. If A= B=C=1 and X  ABC  BCA  C AB , B
then X=
1) 0 2) 1 3) 100 4) 110 Y
28. The input of A and B for the C

 _______   _______  1) 0,0 2) 0,1 3) 1, 0 4) 1,1

Boolean expression  A  B  .  A.B   1 is 34. Identify the gate represented by the block
  
1) 0,0 2) 0, 1 3) 1,0 4) 1, 1 diagram as shown in fig.
29. Write the name of the follwoing gate that the circuit A
shown in figure. Y
B
+5V 1) AND gate 2) NOT gate
3) NAND gate 4) NOR gate
D1
35. The Boolean expression for the gate
0 V circuit shown below is

D2
A Y
1)AND gate 2)OR gate 3)NOR gate 4)XOR gate
30. Consider a two-input AND gate of figure below.
1) A  A  1 2) A  1  1
Out of the four entries for the Truth Table given

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

3) A  A  A 4) A  0  A Vm 10
36. The output Y of the gate circuit shown in the 11. Vdc   volt
 
figure below is
12. Vin  V  VZ
A
Y 13. Capacitor once gets charged upto maximum
B potential .After that for any other lesser value
1) A.B 2) A.B 3) A.B 4) A  B of p.d across A and B diode is reverse biased
and it does not allow charge to flow in opposite
LEVEL-II B - KEY direction.
1) 4 2) 1 3) 3 4) 3 5) 3 6) 1 7) 1 Vmax
FromVrms 
8) 3 9) 2 10) 3 11) 2 12) 1 13) 4 14) 2 2
15) 1 16) 2 17) 1 18) 2 19) 3 20) 2 21) 4  Vmax  Vrms 2  220 2 volts
22) 4 23) 1 24) 3 25) 4 26) 3 27) 1 28) 1
29) 1 30) 3 31) 2 32) 1 33) 4 34) 4 35) 1 VA  0.2  103  5  103  0.3
3 3
36) 2 14. 0.2  10  5  10  VB  0
LEVEL-II B - HINTS  VA  VB  2.3 volt
2. When Ge specimen is doped with Al, then
concentration of acceptor atoms is also called 15.   Ic , Ic  98 Ie ,   
Ie 100 1 
concentration of holes. Using formula, ni 2  n0 p0
IC
where 16. I e  I b  I c and   I
B
n1  concentration of electron hole pair = 1019 m 3 17. In a common-base arrangement, the current
n0  concentration of electron amplifica-tion factor.
IC
p0  concentration of holes = 1021 atom m3   I C   E  0.88  1  0.88mA.
IE
19 2
 10   1021  n0  n0  1017 m 3 and I B  I E  IC
3.  i  ni e( e   h ) CI
18.   I  IC   B  40  25  106 and I E  I B  I C
B
4. In forward bias holes move from P to n, side
electrons move from n to P 
19.  
5. for forward bias, V p  Vn , and for reverse 1
I c I c
bias V p  Vn 20.   I ,   I
e b
E  Vb
6. i Battery voltage 12 volt
R 21. I  Collector load  =
6k
V RAC
7. V =4.5- 0.7=3.8V ; R  190 , i = 22.  

and Av   R
R 1  in
8. R   in the case of reversebias
R
9. If positive terminal is connected to A, D1 is in 23.    , AV   L
forward bias and D2 is in reverse bias. So 20W is 1  Ri
ineffective. 2 RL
24. AP   R
V 3 i
i    0.3 A
R 10 1
10. Use Wheat stones bridge principle 25.  
2 LC

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 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES

111 0.048m 2 / Vs , respectively, If the voltage

 111 applied across it is 2V and the intrinsic charge
26. 1 11
concen-tration is ni  1.5  106 m 3 , then the
1110 total current flowing through the crystal is.
27. Check the value of x by substituing A=B=C=1 1) 8.78  10 17 A 2) 6.25  1017 A
28. A  B  1 , A.B  1 3) 7.89  10 17 A 4) 2.456  10 17 A
A  B  0 , A.B  0
4. Find the current produced at room temperature
30. Check the truth table
in a pure germanium plate of area 2  10 4 m 2
31. Y  A  B
and of thickness 1.2 10 3 m when a potential
A B Y
of 5 V is applied across the faces.
1 1 1
1 0 0 Concentration of carriers in germanium at room
33. 1 0 temperature is 1.6  106 per cubic metre. The
0
0 0 0 mobilities of electrons and holes are
34. The boolean expression of this gate is 0.4m 2V 1s 1 and 0.2m 2V 1s 1 respectively..
Y=(A+B).(A+B) = (A+B) + (A+B) = (A+B) The heat energy generated in the plate in 100
which is for NOR gate. second is
35. The input of OR gate is A & A 1) 2.4 1011 J 2) 3.4 1011 J
Y  A A 1 3) 5.4  1011 J 4) 6.4  1011 J
36. The input of AND gate is A and B  Y  A.B 5. An n-type semiconductor has impurity level
20meV below the conduction band. In a
thermal collision, transferble energy is KT.
LEVEL-III The value of T for which electrons start to jump
in conduction band is :
1. If the ratio of the concentration of electrons to 1) 232 K 2) 348 K 3) 400 K 4) 600 K
7 6. Assume that the number of hole-electron pair
that of holes in a semi-conductors is and in an intrinsic semiconductor is proportional
5
to e E / 2 KT . Here E = energy gap and
7
the ratio of currents is , then the ratio of k  8.62  105 eV / kelvin
4 The energy gap for silicon is 1.1eV. The ratio
drift velocities is of electron hole pairs at 300K and 400 K is :
1) 5/8 2) 4/5 3) 5/4 4) 4/7 1) e 5.31 2) e 5 3) e 4) e2
2. If the resistivity of copper is 1.7  10 6  cm,
7. In the circuit shown in figure (1), the V0,I1, I D1 ,
then the mobility of electrons in copper, if each
atom of copper contributes one free electron and I D3 are respectively
for conduction, is [The atomic weight of copper 0.33 k
is 63.54 and its density is 8.96 g/cc]: + lD1
+
l1 l1 lD2
+ +
1) 23.36cm 2 / Vs 2) 503.03cm 2 / Vs 10V
D1 Si D2 Si
v0 = 10V 0.7V – – 0.7V
v0

– –
3) 43.25cm 2 / Vs 4) 88.0cm 2 / Vs
(A) (B)
3. A pure silicon crystal of length l  0.1m  and 1) 0.5V, 25 mA , 15 mA
area A 10 m  has the mobility of electron
4 2 2)0.7V, 28.18 mA , 14.09 mA
3) 0.4V, 15 mA , 20 mA
 e  and holes  h  as 0.135m2 / Vs and 4) 0.3V, 15.06 mA , 20.18 mA

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

8. For a junction diode , the ratio of forward 3) 7.2V, 3.86, 3.698 4) 8.2V, 4.91, 3.15
13 For a CE transistor amplifier, the audio signal
current  I f  and reverse current is
voltage across the collector resistance of 2 k 
[ I e  electronic charge, is 2V. Suppose the current amplification factor
V = voltage applied across junction, of the transistor is 100. The value of RB in
k = Boltzmann constant
series with VBB supply of 2V, if the DC base
T = temperature in kelvin]
current has to be10 times the signal current is
1) e  v / kT 2) eV / kT 3)  e eV / kT  1 4)  eV / kT  1 1) 4 k 2) 14 k 3) 28 k 4) 54 k
9. In the diagram D an ideal diode and an 14 Figure shows the transfer characteristics of a
alternating voltage of peak value 10V is base biased CE transistor.Which of the
connected as input V1 . Which of the following following statements are true ?
diagram represents the correct waveform of V 0

output voltage V ?
R

D 0 0.6V 2V V
+ A) At V1  0.4 V transistor is in active state
Vi  5V V0
– B) At V1  1 V it can be used as an amplifier
+5V +5V +10V
C) At V1  0.5 V , It can be used as a switch turned offf
+5V +5V
0 0 D) At V1  2.5 V , it can be used as a switch turned on
0 0
0 0 0 0
1)A,B,C 2)B,C,D 3)A,C,D 4)A,B,D
(1) (2) –5V (3) –5V (4) –10V 15. The following configuration of gates is
10. For a CE-transistor amplifier, the audio signal equivalent to
voltage across the collector resistance of 2k A

is 2V. Suppose the current amplification factor

B
of the transistor is 100. Find the input signal Y
voltage and base current, if the base resistance
is 1k .
1) 0.02V 2) 0.01V 3) 0.03V 4) 0.04V 1) NAND gate 2) XOR gate
11. In the circuit, transistor has a current 3) OR gate 4) NOR gate
()  100 . What should be the base resistor 16. The combination of the gates shown below
R neglect V , so that V  5V : produces
B BE CE
A G1
RC=1k G3 G4
RB
C B G2
VCE VCC=10V
B E 1) AND gate 2) XOR gate
3) NOR gate 4) NAND gate
17. Which of the following truth tables is true?
1) 200 k 2) 1 k 3) 500 k 4) 2 k
A
12. An N  P  N transistor is connected in
common - emitter configuration in which Y
collector supply is 8V and the voltage drop B
across the load resistance of 800  connected 1)
A B Y 2) A B Y
in the collector circuit is 0.8V. If current 0 0 0 0 0 0
amplification factor is 25/26 (If the internal 1 0 0 1 0 0
resistance of the transistor is 200  ), the 0 1 0 0 1 1
collector-emitter voltage, voltage gain and 1 1 0 1 1 1
power gain are respectively. 3) A B Y 4) A B Y
1) 5.2V, 1.86, 3 2) 6.2V, 186, 5.5 0 0 0 0 0 0
SR.INTER - IIT ADVANCED - VOL - 4 118
 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES
1 0 1 1 0 1 20. Logic gates X and Y have the truth tables
0 1 1 0 1 1 shwon below
1 1 1 1 1 0 P
18. Truth table for system of four NAND gates R P R
Q X Y
as shown in figure is :
A
P Q R P R
Y 0 0 0 0 1
1 0 0 1 0
B 0 1 0
1 1 1
A B Y A B Y
0 0 0 0 0 0 When the output of X is connected to the input
1) 0 1 1 2) 0 1 0 of Y, the resulting combination is equivalent
1 0 1 1 0 1 to a single .
1 1 0 1 1 1 1) NOT gate 2) OR gate
3) NOR gate 4) NAND gate
A B Y A B Y
0 0 1 0 0 1
LEVEL-III - KEY
3) 0 1 1 4) 0 1 0 1) 3 2) 3 3)1 4) 4 5)1 6) 1 7) 2
1 0 0 1 0 0 8) 3 9) 4 10) 2 11)1 12) 3 13) 2 14) 2
1 1 0 1 1 1
15) 2 16) 4 17)1 18)1 19)1 20) 4
19. The logic circuit shown below has the input LEVEL-III - HINTS
waveforms ‘A’ and ‘B’ as shown. Pick out the
correct output waveform I e ne   vd e
1. I  n e Avd I  n  v
A h h  d h
Y ne 7 I e 7
B Here n  5 , I  4
h h

Input A
7 7  vd e  vd e 5 7 5
      
4 5  vd h  vd h 7 4 4
Input B

2. Mobility of electron   - (1)
ne
1) 1
also resistivity  

1
From Eqs. (i) and (ii) , we get  
2) ne
Here, n = number of free electrons per unit volume
N0  d
n
3) atomicweight
6.023  1023  8.96
n  8.5  10 22
63.54
4)
From Eqs. (iii) and (iv) , we get
1

8.5  10  1.6  10 19  1.7  10 6
22

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 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

   43.25cm 2 / Vs 9. For V1  5V , the diode is forward-biased, output

AV will be fixed at 5V. For V1  5V , the diode is
3. I  e  ne e  nh h 
l reverse biased. The output will follow V
Putting the values, we get 10. Here; v0  2V ,   100,
17
I  8.78  10 A
RC (collector resistance) = 2 k , RB  1 k 
4. ne  nh  ni
v0 R  R  1 
  ni e  e  h   1.6  1.6  0.6  10 13 As Av     C  , vi  v0  B  
Current produced in germanium plate.
v1  RB   RC   

V   1k   1 
I  JA   E. A     A   2V      0.01V
d   2 k    100 
Heat generated in the plate, H  V  I  t 11. Applying KVL to QCETSRQ, we get
13 V  I R  V and calculate I
 5  1.28  10  100  6.4  10 11 joule CC C C CE C

5. KT  20  103 eV
20  103
T  eV
k
20  103 eV
 = 232 K
8.62  105 eV / K
IC I
  IB  C
N1 eE / 2 KT1 IB 
6. 
N 2 eE / 2 KT2 Applying KVL to PUTSRQP, we get
V  I R  V here V is negligible
CC B B BE BE
E  1 1  1.1
 1 1 
 28.62105 
  
2 K  T2 T1    V CC
e e  400 300  V  I R  I 
R
CC B B B
B

7. Since applied voltage is greater than 0.7 V and 12. The circuit arrangement is shown in figure
direction of current is same as direction of arrow
lC
head, both the diodes are in “on” state (see above
figure(2)). Now V0is parallel to D1and D2. C
Hence V0=0.7 V l B B VCE 800 R 0.8V L

V E  VD 10V  0.7V RB E
Current I1  R   = + - - +
R R 0.33k 
28.18 mA VBE VCE= 8V
Bothe the silecon diodes have similar Voltage drop across R L
characteristics. collector current IC = RL
I1
Hence I D1  I D2   14.09mA 0.8
2   103 amp.
800
Current in junction diode , l f  l0  e  1 In
eV / kT
8.
Now VCE  8  0.8  7.2 volt
forward baising, V is positive and in reverse bias V
is negative Then , IC 25 103
Current gain   
Ir  I0 I B (or) 26 IB
If I 0 (eeV / KT  1) 26
   IB   10 3  1.04  103 amp.
Ir I0 25
RL
  e eV / kT  1 VOL -4R
Voltage- gain
SR.INTER - IIT ADVANCED 120
C
 JEE-ADV PHYSICS- VOL- IV SEMI CONDUCTOR DEVICES


25 800 100
   3.846   
Y  A. A  B  A  B .B 
26 200 26
2  A. A  A.B  A.B  B.B
R  25  800
2
Power gain   L    
RC  26  200    
Y  A.B  A.B .

 25 
2 19. Truth table:
    4  3.698 A B Y
 26 
1 1 1
13 The output AC voltage is 2V. So the AC collector
1 0 0
2
current ic   1mA 0 1 0
2000 0 0 0
The signal current through the base is therefore , 20. Verify truth table
given by
LEVEL - IV
ic
iB  COMPREHENSION TYPE

PASSAGE - I
The D.C base current has to be10  iB A block of pure silicon at 300K has a length of
VBB  VBE  10cm and an area of 1.0cm2 . A battery of emf
 RB  , VBE  0.6V 2V is connected across it. The mobility of
lB
electron is 0.14 m 2 v 1S 1 and their number
 RB 
 2  0.6   14 k  density is 1.5  1016 m-3. The mobility of holes
0.10
is 0.05 m2 v 1S 1
14. From the given transfer characteristics of a base
biased common emitter transsistor, we note that 1. The electron current is
ii) When V1  1V ( which is in between 0.6V to 1) 6.72 104 A 2) 6.72 105 A
2.V), the transistor circuit is in active state and it 3) 6.72 106 A 4) 6.72 107 A
used as an amplifier
2. The hole current is
iii) When V1  0.5V there is no collector current ,
The transistor is in cut-off state. The transistor circuit 1) 2.0 107 A 2) 2.2 107 A
can be used as a switch turned off 3) 2.4 107 A 4) 2.6
iv) When V1  2.5V the collector current becomes
3. The total current in the block is
maximum and transistor is in saturation and can be
used as switch turned on state 1) 2.4 107 A 2) 6.72 107 A

 
15. Y   A  B  . A.B   A  B  . A  B   3) 4.32 107 A 4) 9.12 107 A
PASSAGE:2
 A. A  A.B  A.B  B.B The input and output resistances in a common base
   
Y  A.B  A.B . it is XOR gate amplifier circuits are 400  and 400K 
respectively. The emitter current is 2mA and current
16. The output of G1 is A G 2 is B . Hence output gain is 0.98.
of G 3 is AB  y = AB i.e., NAND gate. 4. The collector current is
1) 1.84mA 2)1.96mA 3)1.2mA 4)2.04mA
  
17. Y  A.B . A.B
5. The base current is
1) 0.012mA 2) 0.022mA
 
  
18. Y  A. A.B . A.B.B   A. A.B    A.B.B 
    3)0.032mA 4) 0.042mA
6. Voltage gain of transistor is

121 SR.INTER - IIT ADVANCED - VOL - 4

 SEMI CONDUCTOR DEVICES JEE-ADV PHYSICS- VOL- IV

1)960 2)970 3)980 4)990

R0 400  103
7. Power gain of transistor is 6. Av    0.98   980
Ri 400
1) 950 2) 960 3)970 4)980
8. The logic circuits are given in column I and AP   Av
the Boolean expressions in column II. 7. Power amplification,
 0.98  980  960
Column - I Column - II
(P) y  A  B ***

(Q) y  A.B

(R) y  A.B

(S) y = A + B
1) A  R , B  S , C  p, D  Q
2) A  S , B  R, C  P, D  Q
3) A  P, B  Q, C  R, D  S
4) A  S , B  P, C  Q, D  R
LEVEL-IV - KEY
1) 4 2) 3 3) 4 4) 2 5) 4 6) 3 7) 2
8) 1

LEVEL-IV - HINTS
V 2
1. E   20V / m
l 0.1
A  1.0cm 2 , ve   e E  0.14  20  2.8ms 1

I e  ne AeVe  6.72  10 7 A
2. In a pure semi conductor,
ne  nh  1.5  1016 m 3
Vh  h E  0.05  20  1.0m / s
I h  nh Aevh  2.4  107 A
3. Total current
I  Ie  I h
 9.12  10 7 A

4. I c   I e  0.98  2  1.96mA
5. I b  I e  I c  2  1.96  0.04mA

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