IR IGBT

IRGB4630DPbF
IRGIB4630DPbF
IRGP4630D(-E)PbF
IRGS4630DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

VCES = 600V C C
C
IC = 30A, TC =100°C

tSC ≥ 5µs, TJ(max) = 175°C E

C E E
G GC C
G
VCE(ON) typ. = 1.65V @ IC = 18A
IRGB4630DPbF IRGP4630DPbF IRGP4630D-EPbF
TO-220AB TO-247AC TO-247AD

C C
Applications

• Industrial Motor Drive

• Inverters E C
E
G C G
• UPS G
• Welding E IRGS4630DPbF
IRGIB4630DPbF
D2Pak
n-channel TO-220AB Full-Pak

G C E
Gate Collector Emitter

Features Benefits
High efficiency in a wide range of applications and switching
Low VCE(ON) and switching losses
frequencies
Improved reliability due to rugged hard switching
Square RBSOA and maximum junction temperature 175°C
performance and high power capability
Positive VCE (ON) temperature coefficient and tight distribution
Excellent current sharing in parallel operation
of parameters
5µs Short Circuit SOA Enables short circuit protection scheme
Lead-Free, RoHS Compliant Environmentally friendly

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRGB4630DPbF TO-220AB Tube 50 IRGB4630DPbF
IRGIB4630DPbF TO-220AB Full-Pak Tube 50 IRGIB4630DPbF
IRGP4630DPbF TO-247AC Tube 25 IRGP4630DPbF
IRGP4630D-EPbF TO-247AD Tube 25 IRGP4630D-EPbF
Tube 50 IRGS4630DPbF
IRGS4630DPbF D2Pak Tape and Reel Right 800 IRGS4630DTRRPbF
Tape and Reel Left 800 IRGS4630DTRLPbF

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Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 47
IC @ TC = 100°C Continuous Collector Current 30
A
ICM Pulse Collector Current, VGE=15V  54
ILM Clamped Inductive Load Current, VGE=20V  72
IF @ TC = 25°C Diode Continuous Forward Current 30
IF @ TC = 100°C Diode Continuous Forward Current 18
IFM Diode Maximum Forward Current  72
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate to Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 206
W
PD @ TC = 100°C Maximum Power Dissipation 103
TJ Operating Junction and -40 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. (1.6mm from case) 300 C
Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbf·in (1.1 N·m)

Thermal Resistance
Parameter Min. Typ. Max. Units
2
RθJC (IGBT) Thermal Resistance Junction-to-Case (D Pak, TO-220) ––– ––– 0.73
Thermal Resistance Junction-to-Case (TO-220 Full-Pak) ––– ––– 3.4
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 0.78
2
RθJC (Diode) Thermal Resistance Junction-to-Case (D Pak, TO-220) ––– ––– 2.0
Thermal Resistance Junction-to-Case (TO-220 Full-Pak) ––– ––– 4.6
Thermal Resistance Junction-to-Case (TO-247) ––– ––– 2.1
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak, °C/W
––– 0.5 –––
TO-220 Full-Pak )
Thermal Resistance Case-to-Sink (TO-247) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)  ––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) ––– ––– 62
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) ––– ––– 40
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak) ––– ––– 65

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA 
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.65 1.95 IC = 18A, VGE = 15V, TJ = 25°C
VCE(on) Collector-to-Emitter Saturation Voltage — 2.05 — V IC = 18A, VGE = 15V, TJ = 150°C
— 2.15 — IC = 18A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 500µA
ΔVGE(th)/ΔTJ Threshold Voltage Temp. Coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 12 — S VCE = 50V, IC = 18A, PW = 80µs
— 2.0 25 µA VGE = 0V, VCE = 600V
ICES Collector-to-Emitter Leakage Current
— 550 — VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
— 2.3 3.3 V IF = 18A
VFM Diode Forward Voltage Drop
— 1.6 — IF = 18A, TJ = 175°C

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Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge — 35 — IC = 18A
Qge Gate-to-Emitter Charge — 10 — nC VGE = 15V
Qgc Gate-to-Collector Charge — 15 — VCC = 400V
Eon Turn-On Switching Loss — 95 —
IC = 18A, VCC = 400V, VGE=15V
Eoff Turn-Off Switching Loss — 350 — µJ
Etotal Total Switching Loss — 445 — RG = 22Ω, L = 200µH, LS = 150nH,
td(on) Turn-On delay time — 40 — TJ = 25°C
tr Rise time — 25 — Energy losses include tail & diode
ns
td(off) Turn-Off delay time — 105 —
reverse recovery 
tf Fall time — 25 —
Eon Turn-On Switching Loss — 285 —
IC = 18A, VCC = 400V, VGE=15V
Eoff Turn-Off Switching Loss — 570 — µJ
Etotal Total Switching Loss — 855 — RG = 22Ω, L = 200µH, LS = 150nH,
td(on) Turn-On delay time — 40 — TJ = 175°C
tr Rise time — 25 — Energy losses include tail & diode
ns
td(off) Turn-Off delay time — 120 —
reverse recovery 
tf Fall time — 40 —
Cies Input Capacitance — 1040 — VGE = 0V
Coes Output Capacitance — 87 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 32 — f = 1.0MHz
TJ = 175°C, IC = 72A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V
RG = 22Ω, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
SCSOA Short Circuit Safe Operating Area 5.0 — — µs
RG = 22Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 260 — µJ TJ = 175°C
trr Diode Reverse Recovery Time — 100 — ns VCC = 400V, IF = 18A, VGE = 15V,
Irr Peak Reverse Recovery Current — 23 — A Rg = 22Ω, L = 200µH, LS = 150nH

Notes:
 Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by Rθ JC.
 Rθ is measured at TJ of approximately 90°C.
 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
 Pulse width limited by maximum junction temperature.
 Values influenced by parasitic L and C in measurement.
 When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.

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50 250

40 200

30 150

Ptot (W)
IC (A)

20 100

10 50

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C (°C) T C (°C)

Fig. 1 - Maximum DC Collector Current vs. Fig. 2 - Power Dissipation vs.

Case Temperature Case Temperature
100 100

10µsec
10
IC (A)
IC (A)

10
100µsec

1
1msec

Tc = 25°C DC
Tj = 175°C
Single Pulse
0.1 1
1 10 100 1000 10000 10 100 1000
VCE (V) VCE (V)

Fig. 3 - Forward SOA Fig. 4 - Reverse Bias SOA

TC = 25°C; TJ ≤ 175°C; VGE = 15V TJ = 175°C; VGE = 20V

90 90
VGE = 18V VGE = 18V
80 80
VGE = 15V VGE = 15V
VGE = 12V VGE = 12V
70 70
VGE = 10V VGE = 10V
VGE = 8.0V VGE = 8.0V
60 60

50 50
ICE (A)

ICE (A)

40 40

30 30

20 20

10 10

0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8

VCE (V) VCE (V)

Fig. 5 - Typ. IGBT Output Characteristics Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs TJ = 25°C; tp = 80µs
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90 100
VGE = 18V
80
VGE = 15V -40°c
70 VGE = 12V 80 25°C
VGE = 10V 175°C
60 VGE = 8.0V
60
50
ICE (A)

IF (A)
40
40
30

20
20
10

0 0
0 1 2 3 4 5 6 7 8
0.0 1.0 2.0 3.0 4.0 5.0
VCE (V) V F (V)

Fig. 7 - Typ. IGBT Output Characteristics Fig. 8 - Typ. Diode Forward Voltage Drop
TJ = 175°C; tp = 80µs Characteristics
20 20
18 18
16 16
14 14
12 ICE = 9.0A 12 ICE = 9.0A
VCE (V)

VCE (V)

10 ICE = 18A 10 ICE = 18A

ICE = 36A ICE = 36A
8 8
6 6
4 4
2 2
0 0
5 10 15 20 5 10 15 20
VGE (V) VGE (V)

Fig. 9 - Typical VCE vs. VGE Fig. 10 - Typical VCE vs. VGE
TJ = -40°C TJ = 25°C
20 180
18 160
16
140
14 T J = 25°C
120 T J = 175°C
12 ICE = 9.0A
VCE (V)

100
ICE (A)

10 ICE = 18A
ICE = 36A 80
8
60
6
4 40

2 20

0 0
5 10 15 20 0 5 10 15 20
VGE (V) VGE (V)

Fig. 11 - Typical VCE vs. VGE Fig. 12 - Typ. Transfer Characteristics

TJ = 175°C VCE = 50V; tp = 10µs

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1400 1000

1200

1000

Swiching Time (ns)

EOFF tdOFF
Energy (µJ)

800

100
600
EON tF
400
tdON
200
tR
0
5 10 15 20 25 30 35 40 10
5 10 15 20 25 30 35 40 45
IC (A) IC (A)

Fig. 14 - Typ. Energy Loss vs. IC Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V
900 1000

800

700 EOFF
600 Swiching Time (ns)
tdOFF
Energy (µJ)

500
EON 100
400
tdON
300

200
tF
100
tR
0 10
0 25 50 75 100 125 0 25 50 75 100 125

Rg ( Ω) RG (Ω)

Fig. 16 - Typ. Energy Loss vs. RG Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V
35 40
RG = 10Ω
30 35

RG = 22Ω 30
25
25
20
IRR (A)

IRR (A)

RG = 47Ω
20
15
RG = 100Ω 15
10
10
5 5

0 0
0 10 20 30 40 0 25 50 75 100 125
IF (A) RG (Ω)
Fig. 18 - Typ. Diode IRR vs. IF Fig. 19 - Typ. Diode IRR vs. RG
TJ = 175°C TJ = 175°C
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40 1600

35
1400 10Ω
30 36A
1200 22Ω
25

QRR (µC)
IRR (A)

47Ω
20 1000
18A
15
800
10 100Ω
9.0A
600
5

0 400
0 500 1000 1500 0 500 1000 1500
diF /dt ( A/µs) diF /dt (A/µs)

Fig. 20 - Typ. Diode IRR vs. diF/dt Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C VCC = 400V; VGE = 15V; TJ = 175°C
400 20 120
RG = 10Ω
18 110
350
16 100
300 RG = 22Ω
14 90
250 80

Current (A)
12
Energy (µJ)

Time (µs)

RG = 47Ω
200 10 70

8 60
150
6 50
100 RG = 100Ω 4 40
50 2 30

0 0 20
0 10 20 30 40 8 10 12 14 16 18
IF (A) VGE (V)

Fig. 22 - Typ. Diode ERR vs. IF Fig. 23 - VGE vs. Short Circuit Time
TJ = 175°C VCC = 400V; TC = 25°C
10000 16

14 V CES = 300V
VGE, Gate-to-Emitter Voltage (V)

V CES = 400V
12
Cies
1000
Capacitance (pF)

10

6
100 Coes
4
Cres
2

10 0
0 20 40 60 80 100 0 5 10 15 20 25 30 35
VCE (V) Q G, Total Gate Charge (nC)

Fig. 24 - Typ. Capacitance vs. VCE Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz ICE = 18A; L = 600µH

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D = 0.50
Thermal Response ( Z thJC )

0.20
0.1
0.10 R1 R2
R1 R2 Ri (°C/W) τi (sec)
τJ τC
0.05 τJ τC
τ1 τ2
0.3193 0.000273
τ1 τ2
0.02 0.4104 0.004525
Ci= τi /Ri
Ci = τi/Ri
0.01 0.01

SINGLE PULSE Notes:

( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak)

10
Thermal Response ( Z thJC )

1 D = 0.50

0.20
0.10
R1 R2 R3 Ri (°C/W)
0.05 τi (sec)
0.1 R1 R2 R3
τJ τC
0.02 τJ τC 0.244 0.000084
τ1 τ2 τ3
τ1
0.01 τ2 τ3 1.102 0.001770
Ci= τi/Ri
Ci= τi/Ri 0.655 0.013544
0.01 SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE- TO-220Pak)

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L
80 V +
DUT VCC
0 - DUT VCC
1K
Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

diode clamp /
DUT

4X L

DC VCC
-5V
DUT DUT / VCC
DRIVER
Rg

RSH

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

C force
R= VCC
ICM

100K

D1 22K
C sense
VCC
DUT DUT
G force 0.0075µF
Rg

E sense

E force

Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit

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600 30 600 60

500 25 500 50
90% ICE tr
400 20 400 40
TEST
300 15 300 30

VCE (V)
VCE (V)

ICE (A)
ICE (A)
90% test
tf
5% ICE
200 10 200 20

10% test current

100 5% VCE 5 100 10
5% VCE

0 0 0 0
EOFF Loss EON
-100 -5 -100 -10
-5.70 -5.20 -4.70 -4.20 -0.15 0.05 0.25
Time(µs) Time (µs)

Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4

30 500 250

QRR
20 400 200
tRR VCE
10
300 150
ICE
0
VCE (V)

ICE (A)
IRR (A)

200 100
-10 Peak 10%
IRR Peak
IRR 100 50
-20

0 0
-30

-40 -100 -50

-0.05 0.05 0.15 -5.00 0.00 5.00 10.00
Time (µs) Time (µs)

Fig. WF3 - Typ. Diode Recovery Waveform Fig. WF4 - Typ. S.C. Waveform
@ TJ = 175°C using Fig. CT.4 @ TJ = 150°C using Fig. CT.3

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TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM B LED O N W W 19, 2000 R E C T IF IE R
I N T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
N o t e : "P " i n a s s e m b l y lin e p o s i t i o n YEA R 0 = 2000
ASSEM B LY
i n d i c a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C

TO-220AB package is not recommended for Surface Mount Application.

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TO-220AB Full– Pak Package Outline
(Dimensions are shown in millimeters (inches))

TO-220AB Full– Pak Part Marking Information

TO-220AB Full-Pak package is not recommended for Surface Mount Application.

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TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

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TO-247AD Package Outline

Dimensions are shown in millimeters (inches)

TO-247AD Part Marking Information

E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y PART N U M BER
LO T C O D E 5657 IN T E R N A T IO N A L
ASSEM B LED O N W W 35, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "H " LO G O 035H
56 57
D A TE C O D E
ASSEM B LY YE A R 0 = 2 0 0 0
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e " LO T C O D E W EEK 35
L IN E H

TO-247AD package is not recommended for Surface Mount Application.

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D2-PAK (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)

D2-Pak (TO-263AB) Part Marking Information

THIS IS AN IRF530S WITH PART NUMBER

LOT CODE 8024 INTERNATIONAL
ASSEMBLED ON WW 02, 2000 RECTIFIER F530S
IN THE ASSEMBLY LINE "L" LOGO
DATE CODE
YEAR 0 = 2000
ASSEMBLY
LOT CODE WEEK 02
LINE L

OR
PART NUMBER
INTERNATIONAL
RECTIFIER F530S
LOGO DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE

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D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Qualification Information†
Qualification Level Industrial
(per JEDEC JESD47F) ††
TO-220AB
TO-220AB-Full-Pak
N/A
Moisture Sensitivity Level TO-247AC
TO-247AD
D2Pak MSL1
RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
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failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

17 2015-11-23