LM4040, LM4041

Precision Micro-Power
Shunt Voltage References
Description
LM4040 and LM4041 are precision two−terminal shunt mode
voltage references offered in factory programmed reverse breakdown http://onsemi.com
voltages of 1.225 V, 2.500 V, 3.000 V, 3.300 V, 4.096 V, and 5.000 V.
ON Semiconductor’s Charge Programmable floating gate
technology ensures precise voltage settings offering five grades of
initial accuracy; from 0.1% to 2%.
LM4040 and LM4041 operate over a shunt current range of 60 mA
SOT−23 3 Lead SC−70 5 Lead
to 15 mA with low dynamic impedance, and 100 ppm/°C temperature TB SUFFIX SD SUFFIX
coefficient ensuring stable reverse breakdown voltage accuracy over a CASE 527AG CASE 419AC
wide range of operating conditions.
These shunt regulators do not require an external stabilizing
capacitor but are stable with any capacitive load (up to 1 mF). MARKING DIAGRAMS
Offered in space saving SOT−23 and SC−70 packages LM4040 and
LM4041 are specified for operation over the full industrial
4xYM 4xA
temperature range of −40°C to +85°C.
G G
Features
• Reverse Breakdown Voltages: 4x = Specific Device Code
♦ 1.225 V ♦ 3.300 V = (4L = LM4040, 4M = LM4041)
♦ 2.500 V ♦ 4.096 V A = Assembly Location Code
♦ 3.000 V ♦ 5.000 V Y = Production Year
M = Production Month
• Accuracy Grades: G = Pb−Free Package
♦ A: ±0.1% ♦ D: ±1.0%
♦ B: ±0.2% ♦ E: ±2.0%
♦ C: ±0.5% PIN CONNECTIONS
• Operating Current: 60 mA to 15 mA
• Low Output Noise: 35 mV 1 1 5
(10 Hz to 10 KHz)
3 2
• Small Package Size: SOT−23, SC−70
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 2 3 4
Compliant
(SOT−23) (SC−70)
Typical Applications
• Mobile Handheld Devices
ORDERING INFORMATION
• Industrial Process Control See detailed ordering and shipping information in the package
• Instrumentation dimensions section on page 11 of this data sheet.

• Laptop and Desktop PCs

• Automotive
• Energy Management

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

July, 2013 − Rev. 4 LM4040/D
 LM4040, LM4041

RS

VIN LM4040 VR
LM4041

Figure 1. Test Circuit

Table 1. PIN DESCRIPTIONS

Pin
SOT−23 SC−70 Name Function
1 3 V+ Positive voltage
2 1 V− Negative voltage
3 2 NC This pin must be left floating or connected to V−.
4 NIC No Internal Connection. A voltage or signal applied to this pin will have no effect.
5 NIC

Table 2. ABSOLUTE MAXIMUM RATINGS

Parameter Rating Unit
Reverse Current 20 mA
Forward Current 10 mA
Junction Temperature 150 °C
Power Dissipation SOT−23−3 300 mW
Power Dissipation SC−70−5 240 mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.

Table 3. RECOMMENDED OPERATING CONDITIONS

Parameter Rating Unit
IREVERSE 0.06 − 15 mA
Ambient Temperature Range −40 to +85 °C

Table 4. ESD SUSCEPTABILITY

Symbol Parameter Min Units
ESD Human Body Model 2000 V
Machine Model 200 V

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 LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits

Symbol Parameter Test Conditions Min Typ Max Units

1.225 V
VR Reverse Breakdown Voltage TA = +25°C LM4041A (0.1%) 1.2238 1.225 1.2262 V
LM4041B (0.2%) 1.2226 1.225 1.2274
LM4041C (0.5%) 1.219 1.225 1.231
LM4041D (1.0%) 1.213 1.225 1.237
LM4041E (2.0%) 1.200 1.225 1.250
VR Reverse Breakdown Voltage LM4041A ±1.2 ±9.2 mV
Tolerance
LM4041B ±2.4 ±10.4
LM4041C ±6 ±14
LM4041D ±12 ±24
LM4041E ±25 ±36
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±20 ppm/°C
Temperature Coefficient
IR = 1 mA LM4041A, B, C ±15 ±100
LM4041D, E ±15 ±150
IR = 100 mA ±15
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4041A, B, C 0.7 2.0 mV
Change with Operating Current 1 mA
LM4041D, E 0.7 2.5
1 mA ≤ IR ≤ LM4041A, B, C 2.5 8
15 mA
LM4041D, E 2.5 10
ZR Reverse Dynamic Impedance IR = 1 mA, LM4041A, B 0.5 1.5 W
f = 120 Hz,
IAC = 0.1 IR LM4041C 0.5 1.5
LM4041D, E 0.5 2.0
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 200 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

2.500 V
VR Reverse Breakdown Voltage TA = +25°C LM4040A (0.1%) 2.498 2.500 2.502 V
LM4040B (0.2%) 2.496 2.500 2.504
LM4040C (0.5%) 2.490 2.500 2.510
LM4040D (1.0%) 2.475 2.500 2.525
LM4040E (2.0%) 2.450 2.500 2.550
VR Reverse Breakdown Voltage LM4040A ±2 ±19 mV
Tolerance
LM4040B ±4 ±21
LM4040C ±10 ±29
LM4040D ±25 ±49
LM4040E ±50 ±74
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.

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 LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits

Symbol Parameter Test Conditions Min Typ Max Units

2.500 V
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±20 ppm/°C
Temperature Coefficient
IR = 1 mA LM4040A, B, C ±15 ±100
LM4040D, E ±15 ±150
IR = 100 mA ±15
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4040A, B, C 0.3 1.0 mV
Change with Operating Current 1 mA
LM4040D, E 0.3 1.2
1 mA ≤ IR ≤ LM4040A, B, C 2.5 8
15 mA
LM4040D, E 2.5 10
ZR Reverse Dynamic Impedance IR = 1 mA, LM4040A, B 0.3 0.8 W
f = 120 Hz,
IAC = 0.1 IR LM4040C 0.3 0.9
LM4040D, E 0.3 1.1
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 350 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

3.000 V
VR Reverse Breakdown Voltage TA = +25°C LM4040A (0.1%) 2.997 3.000 3.003 V
LM4040B (0.2%) 2.994 3.000 3.006
LM4040C (0.5%) 2.985 3.000 3.015
LM4040D (1.0%) 2.970 3.000 3.030
LM4040E (2.0%) 2.940 3.000 3.060
VR Reverse Breakdown Voltage LM4040A ±3 ±22 mV
Tolerance
LM4040B ±6 ±26
LM4040C ±15 ±34
LM4040D ±30 ±59
LM4040E ±60 ±89
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±20 ppm/°C
Temperature Coefficient
IR = 1 mA LM4040A, B, C ±15 ±100
LM4040D, E ±15 ±150
IR = 100 uA ±15
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4040A, B, C 0.4 1.1 mV
Change with Operating Current 1 mA
LM4040D, E 0.4 1.3
1mA ≤ IR ≤ LM4040A, B, C 2.7 9
15 mA
LM4040D, E 2.7 11
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.

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 LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits

Symbol Parameter Test Conditions Min Typ Max Units

3.000 V
ZR Reverse Dynamic Impedance IR = 1 mA, LM4040A, B 0.4 0.9 W
f = 120 Hz,
IAC = 0.1 IR LM4040C 0.4 0.9
LM4040D, E 0.4 1.2
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 350 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

3.300 V
VR Reverse Breakdown Voltage TA = +25°C LM4040A (0.1%) 3.297 3.300 3.303 V
LM4040B (0.2%) 3.294 3.300 3.306
VR Reverse Breakdown Voltage TA = +25°C LM4040C (0.5%) 3.285 3.300 3.315 V
LM4040D (1.0%) 3.270 3.300 3.330
VR Reverse Breakdown Voltage LM4040A ±3 ±22 mV
Tolerance
LM4040B ±6 ±26
LM4040C ±15 ±34
LM4040D ±30 ±59
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±20 ppm/°C
Temperature Coefficient
IR = 1 mA LM4040A, B, C ±15 ±100
LM4040D ±15 ±150
IR = 100 mA ±15
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4040A, B, C 0.3 1.0 mV
Change with Operating Current 1 mA
LM4040D 0.3 1.2
1 mA ≤ IR ≤ LM4040A, B, C 2.5 8
15 mA
LM4040D 2.5 10
ZR Reverse Dynamic Impedance IR = 1 mA, LM4040A, B 0.3 0.8 W
f = 120 Hz,
IAC = 0.1 IR LM4040C 0.3 0.9
LM4040D 0.3 1.1
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 350 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

4.096 V
VR Reverse Breakdown Voltage TA = +25°C LM4040A (0.1%) 4.092 4.096 4.100 V
LM4040B (0.2%) 4.088 4.096 4.104
LM4040C (0.5%) 4.080 4.096 4.120
LM4040D (1.0%) 4.055 4.096 4.137
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.

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 LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits

Symbol Parameter Test Conditions Min Typ Max Units

4.096 V
VR Reverse Breakdown Voltage LM4040A ±4 ±31 mV
Tolerance
LM4040B ±8 ±35
LM4040C ±20 ±47
LM4040D ±41 ±80
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±30 ppm/°C
Temperature Coefficient
IR = 1 mA LM4040A, B, C ±20 ±100
LM4040D ±20 ±150
IR = 100 mA ±15
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4040A, B, C 0.5 1.2 mV
Change with Operating Current 1 mA
LM4040D 0.5 1.5
1 mA ≤ IR ≤ LM4040A, B, C 3.0 10
15 mA
LM4040D 3.0 13
ZR Reverse Dynamic Impedance IR = 1 mA, LM4040A, B 0.5 1.0 W
f = 120 Hz,
IAC = 0.1 IR LM4040C 0.5 1.0
LM4040D 0.5 1.3
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 800 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

5.000 V
VR Reverse Breakdown Voltage TA = +25°C LM4040A (0.1%) 4.995 5.000 5.005 V
LM4040B (0.2%) 4.990 5.000 5.010
LM4040C (0.5%) 4.975 5.000 5.025
LM4040D (1.0%) 4.950 5.000 5.050
VR Reverse Breakdown Voltage LM4040A ±5 ±38 mV
Tolerance
LM4040B ±10 ±43
LM4040C ±25 ±58
LM4040D ±50 ±99
IR_MIN Minimum Operating Current 45 65 mA
DVR/DT Reverse Breakdown Voltage IR = 10 mA ±30 ppm/°C
Temperature Coefficient
IR = 1 mA LM4040A, B, C ±20 ±100
LM4040D ±20 ±150
IR = 100 mA ±15
1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.

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 LM4040, LM4041

Table 5. DC ELECTRICAL CHARACTERISTICS

(IR = 100 mA, TA = −40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
Limits

Symbol Parameter Test Conditions Min Typ Max Units

5.000 V
DVR/DIR Reverse Breakdown Voltage IR_MIN ≤ IR ≤ LM4040A, B, C 0.5 1.4 mV
Change with Operating Current 1 mA
LM4040D 05 1.8
1 mA ≤ IR ≤ LM4040A, B, C 3.5 12
15 mA
LM4040D 3.5 15
ZR Reverse Dynamic Impedance IR = 1 mA, LM4040A, B 0.5 1.1 W
f = 120 Hz,
IAC = 0.1 IR LM4040C 0.5 1.1
LM4040D 0.5 1.5
eN Wideband Noise IR = 100 mA, 10 Hz ≤ f ≤ 10 KHz 800 mVRMS
DVR Reverse Breakdown Voltage T = 1000 h 120 ppm
Long Term Stability

VHYST Thermal Hysteresis (Note 2) DT = −40°C to +125°C 0.08 %

1. Guaranteed by design.
2. Thermal hysteresis is defined as the difference in voltage measured at +25°C after cycling to temperature −40°C and the 25°C measure-
ment after cycling to temperature +125°C.

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 LM4040, LM4041

TYPICAL PERFORMANCE CHARACTERISTICS

5 10
VIN (V)

VIN (V)
0 5

3 6

2 4
VR (V)

VR (V)
1 2

0 0

0 10 20 30 40 0 20 40 60 80
RESPONSE TIME (ms) RESPONSE TIME (ms)
Figure 2. LM4040 − 2.5 V (RS = 30 k) Figure 3. LM4040 − 5 V (RS = 30 k)

5
VIN (V)

1.5

1.0
VR (V)

0.5

0 10 20 30 40
RESPONSE TIME (ms)
Figure 4. LM4041 − 1.225 V (RS = 30 k)

100 100
REVERSE CURRENT (mA)

REVERSE CURRENT (mA)

80 80

60 60

40 40 +85°C
+85°C
+25°C +25°C −40°C
20 20
−40°C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6
REVERSE VOLTAGE (V) REVERSE VOLTAGE (V)
Figure 5. Reverse Characteristics Figure 6. Reverse Characteristics
(LM4040 − 2.5 V) (LM4040 − 5 V)

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 LM4040, LM4041

TYPICAL PERFORMANCE CHARACTERISTICS

0.3 0.4
IR = 150 mA
0.2 0.3 IR = 150 mA
+48 ppm/°C
+35 ppm/°C 0.2
0.1
VR CHANGE (%)

VR CHANGE (%)
0.1
0
0
−0.1 −20 ppm/°C
−0.1
−0.2 −29 ppm/°C
−0.2
−0.3 −0.3
−0.4 −0.4
−0.5 −0.5
−40 −20 0 20 40 60 80 100 −40 −20 0 20 40 60 80 100
TEMPERATURE (°C) TEMPERATURE (°C)
Figure 7. Temperature Drift − LM4040 Figure 8. Temperature Drift − LM4041

1.E+03 1.E+03
IR = 150 mA
IR = 1 mA
TJ = 25°C,
TJ = 25°C,
DIR = 0.1IR
OUTPUT IMPEDANCE (W)

OUTPUT IMPEDANCE (W)

1.E+02 1.E+02 DIR = 0.1IR
CL = 0 mF
CL = 0 mF
LM4041 − 1.225 V
LM4041 − 1.225 V
1.E+01 1.E+01
LM4040 − 5 V

1.E+00 1.E+00 LM4040 − 5 V

CL = 1 mF CL = 1 mF
LM4040 − 2.5 V
LM4040 − 2.5 V
1.E−01 1.E−01
1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06
FREQUENCY (Hz) FREQUENCY (Hz)
Figure 9. Output Impedance vs. Frequency Figure 10. Output Impedance vs. Frequency

100
REVERSE CURRENT (mA)

80

60

40
+85°C
+25°C
20
−40°C
0
0 0.4 0.8 1.2 1.6 2.0
REVERSE VOLTAGE (V)
Figure 11. Reverse Characteristics − LM4041

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 LM4040, LM4041

Device Description VS RS VR ILOAD

The LM404x shunt references use ON Semiconductor’s
floating gate (EEPROM) technology to produce a capacitor
ISHUNT
which stores an accurate and stable voltage that is used as the
reference voltage for a control amplifier and shunt
N−channel FET.

+ Figure 13. Typical Operating Circuit

To select a value of RS, set VS at its minimum value and

ILOAD at its maximum. Be sure to maintain a minimum
operating current of 60 mA through LM404x at all times, as
+ LM404x uses this current to power its internal circuitry. The
RS value should be large enough to keep ISHUNT less than
− 15 mA for proper regulation when VS is maximum and
VREF + ILOAD is at a minimum. Therefore, the value of RS is
bounded by the following equation:
ǒVS(min) * VRǓ
u RS
− ǒ60 mA ) ILOAD(max)Ǔ
Figure 12. Functional Block Diagram and

The device operates like a zener diode; maintaining a ǒVS(max) * VRǓ

RS u
fixed voltage across its output terminals when biased with ǒ15 mA ) ILOAD(min)Ǔ
60 mA to 15 mA of reverse current. The LM404x will also
act like a silicon diode when forward biased with currents up Choosing a larger resistance minimizes the power
to 10 mA. dissipated in the circuit by reducing the shunt current.

Applications Information Output Capacitance

The LM404x’s internal pass transistor maintains a The LM404x does not require an external capacitor for
constant output voltage by sinking the necessary amount of frequency stability and is stable for any output capacitance.
current across a source resistor. The source resistance (RS)
Effect of Temperature
is set by the load current range (ILOAD), supply voltage (VS)
LM404x has an output voltage temperature coefficient of
variations, LM404x’s terminal voltage (VR), and desired
typically ±15 to ±30 ppm/°C meaning the LM404x’s output
quiescent current.
voltage will change by 50 – 100 mV/°C for a 3.300 V
regulator. The polarity of this temperature induced voltage
shift can vary from device to device, some moving in the
positive direction and others in the negative direction.

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 LM4040, LM4041

Table 6. ORDERING INFORMATION

Specific
Device Package
Part Number Marking Voltage Accuracy Max Drift Temperature Range (Note 3)

LM4041ATB−122GT3* ±0.1%
LM4041BTB−122GT3 ±0.2% 100 ppm/°C
LM4041CTB−122GT3 4M 1.225 V ±0.5%
LM4041DTB−122GT3 ±1.0%,
150 ppm/°C
LM4041ETB−122GT3 ±2.0%,
LM4040ATB−250GT3* ±0.1%
LM4040BTB−250GT3 ±0.2% 100 ppm/°C
LM4040CTB−250GT3 2.500 V ±0.5%
LM4040DTB−250GT3 ±1.0%,
150 ppm/°C
LM4040ETB−250GT3* ±2.0%,
LM4040ATB−300GT3* ±0.1%
LM4040BTB−300GT3 ±0.2% 100 ppm/°C
LM4040CTB−300GT3 3.000 V ±0.5%
LM4040DTB−300GT3 ±1.0%,
150 ppm/°C
LM4040ETB−300GT3* ±2.0%,
−40°C to 85°C SOT−23−3
LM4040ATB−330GT3* ±0.1%
LM4040BTB−330GT3 ±0.2% 100 ppm/°C
LM4040CTB−330GT3 4L 3.300 V ±0.5%
LM4040DTB−330GT3 ±1.0%,
150 ppm/°C
LM4040ETB−330GT3* ±2.0%,
LM4040ATB−409GT3* ±0.1%
LM4040BTB−409GT3 ±0.2% 100 ppm/°C
LM4040CTB−409GT3 4.096 V ±0.5%
LM4040DTB−409GT3 ±1.0%,
150 ppm/°C
LM4040ETB−409GT3* ±2.0%,
LM4040ATB−500GT3 ±0.1%
LM4040BTB−500GT3 ±0.2% 100 ppm/°C
LM4040CTB−500GT3 5.000 V ±0.5%
LM4040DTB−500GT3 ±1.0%,
150 ppm/°C
LM4040ETB−500GT3* ±2.0%,
*Consult Sales.
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com

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 LM4040, LM4041

Table 6. ORDERING INFORMATION

Specific
Device Package
Part Number Marking Voltage Accuracy Max Drift Temperature Range (Note 3)

LM4041ASD−122GT3* ±0.1%
LM4041BSD−122GT3 ±0.2% 100 ppm/°C
LM4041CSD−122GT3 4M 1.225 V ±0.5%
LM4041DSD−122GT3 ±1.0%,
150 ppm/°C
LM4041ESD−122GT3* ±2.0%,
LM4040ASD−250GT3* ±0.1%
LM4040BSD−250GT3 ±0.2% 100 ppm/°C
LM4040CSD−250GT3 2.500 V ±0.5%
LM4040DSD−250GT3 ±1.0%,
150 ppm/°C
LM4040ESD−250GT3* ±2.0%,
LM4040ASD−300GT3* ±0.1%
LM4040BSD−300GT3 ±0.2% 100 ppm/°C
LM4040CSD−300GT3 3.000 V ±0.5%
LM4040DSD−300GT3 ±1.0%,
150 ppm/°C
LM4040ESD−300GT3* ±2.0%,
−40°C to 85°C SC−70−5
LM4040ASD−330GT3* ±0.1%
LM4040BSD−330GT3 ±0.2% 100 ppm/°C
LM4040CSD−330GT3 4L 3.300 V ±0.5%
LM4040DSD−330GT3 ±1.0%,
150 ppm/°C
LM4040ESD−330GT3* ±2.0%,
LM4040ASD−409GT3* ±0.1%
LM4040BSD−409GT3 ±0.2% 100 ppm/°C
LM4040CSD−409GT3 4.096 V ±0.5%
LM4040DSD−409GT3 ±1.0%,
150 ppm/°C
LM4040ESD−409GT3* ±2.0%,
LM4040ASD−500GT3* ±0.1%
LM4040BSD−500GT3 ±0.2% 100 ppm/°C
LM4040CSD−500GT3 5.000 V ±0.5%
LM4040DSD−500GT3 ±1.0%,
150 ppm/°C
LM4040ESD−500GT3* ±2.0%,
*Consult Sales.
3. Tape & Reel, 3,000 Units / Reel
4. All packages are RoHS−compliant (Lead−free, Halogen−free).
5. The standard lead finish is NiPdAu.
6. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
7. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com

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 LM4040, LM4041

PACKAGE DIMENSIONS

SOT−23, 3 Lead
CASE 527AG
ISSUE O

SYMBOL MIN NOM MAX

D
A 0.89 1.12

3 A1 0.013 0.10
b 0.37 0.50
c 0.085 0.18
D 2.80 3.04
E1 E
E 2.10 2.64
E1 1.20 1.40
e 0.95 BSC
1 2
e1 1.90 BSC
e L 0.40 REF
e1 L1 0.54 REF
θ 0º 8º
TOP VIEW

A
q

b
L1 L
A1 c

SIDE VIEW END VIEW

Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC TO-236.

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 LM4040, LM4041

PACKAGE DIMENSIONS

SC−88A (SC−70 5 Lead), 1.25x2

CASE 419AC
ISSUE A

SYMBOL MIN NOM MAX

D
A 0.80 1.10
e e
A1 0.00 0.10
A2 0.80 1.00
b 0.15 0.30
c 0.10 0.18
D 1.80 2.00 2.20
E1 E
E 1.80 2.10 2.40
E1 1.15 1.25 1.35
e 0.65 BSC
L 0.26 0.36 0.46
L1 0.42 REF
L2 0.15 BSC
TOP VIEW 0º 8º
θ
θ1 4º 10º

q1

A2 A
q

L
b
q1 A1 L1 c L2

SIDE VIEW END VIEW

Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-203.

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