IMPORTANT QS

UNIT-I

1(a) Explain the applications of Magic Tee.

(b) Inspect the principle of operation of Slide vane type attenuator.

2(a) Explain Faraday’s rotation Principle.

(b) Inspect the operation of Isolator with neat sketch and simplify the scattering matrix.
3(a) Explain S-Matrix and its properties
Inspect the Principle of operation for Gyrator with a neat diagram
(b)

4(a) Explain briefly about Bethe-Hole Coupler.

(b) Briefly explain the following: (i)Posts (ii) Tuning screws
Explain the operation of H-plane Tee junction and derive the scattering matrix for this
5
Tee junction with neat diagram
Explain the operation of E-plane Tee junction and simplify the scattering matrix for this
6
Tee junction with neat diagram
7(a) Analyze the construction and working of a ferrite circulator with neat diagram
(b) Inspect the principle of operation of fixed attenuator.
8(a) Analyze the probe coupling mechanism of wave guide energy into waveguide.
(b) Define microwave junction. How can it be described by scattering matrix
9 Inspect the principle of operation of rotary vane type attenuator and flap type attenuator
10 Analyze two-hole directional coupler and simplify the S-matrix of directional coupler.
Inspect the operation of Magic- Tee junction and simplify the scattering matrix for this
11
Tee junction with neat diagram.
A directional coupler has 10 dB coupling coefficient and 40 dB directivity, insertion loss
of 1 dB. For an input power of 10mW at the input port of the main arm, determine the
12
power at different ports. Other ports except the one at which the measurement is made
are match terminated.

UNIT-II
1(a) Explain about the velocity modulation process in Two Cavity klystron with neat
schematic diagram
(b) List and discuss the applications and limitations of reflex klystron and two-cavity klystron

2(a) Explain the limitations of conventional tubes at microwave frequencies

 (b) What is the use of a slow wave structure in TWT and explain about different types of
slow wave structures.
3(a) Explain the differences between TWT and Klystron.

(b) A reflex klystron oscillator has V0= 600V, L= 1mm e/m= 1.759x1011 (MKS system) and
f= 9 GHz. Find the repeller voltage for which the tube can oscillate at the peak of the n=2
mode or 1 ¾ mode.
4(a) Explain about the velocity modulation process in Reflex klystron with neat schematic
diagram
(b) How to change the frequency of oscillations in reflex klystron?
5 Explain about the Bunching process in 2 cavity klystron with all diagrams
6 Determine the expression for the output power and efficiency of 2 cavity klystron.
7(a) What are different propagation constants in TWT? How to calculate them?
(b) A helical TWT has diameter of 2 mm with 50 turns per cm. Determine axial phase
velocity and the anode voltage at which the TWT can be operated for useful gain.
8 Name the different methods of generating microwave power. Explain the necessary
theory about the working of a reflex klystron oscillator. Explain how frequency
stabilization is achieved in this tube.
9 The parameters of 2 cavity klystron are V0=900V and I0=30mA, frequency=8GHz, gap
spacing in either cavity is 1mm, spacing between the two cavities is 4Cm, effective shunt
impedance is 40K ohms. Then
a) Determine input microwave voltage in order to generate the maximum output voltage
b) Voltage gain
c) Efficiency of amplifier d) Beam loading conductance
10 In an O type TWT the acceleration voltage is 3000v, characteristics impedance is 10 ohms,
operating frequency is 10GHz and beam current is 20mA. Determine the propagation
constants of four modes of the TWT
11 Explain the amplification process of TWT and represent electronic equation of TWT with
neat schematic diagram.
12 Explain velocity modulation and current modulation two cavity klystron with neat
diagram with necessary equations

UNIT-III

1(a) Determine the Cyclotron angular frequency of Cylindrical Magnetron.

(b) Explain the terms frequency pulling and frequency pushing with reference to magnetron.
Explain how the oscillations are sustained in cavity magnetron with suitable sketches
2(a)
assuming that π – mode oscillations already exist.
(b) Explain the classification of different types of magnetrons.
3(a) Explain how the oscillations are sustained in cavity magnetron without strapping.
(b) Explain the performance of magnetrons and list the important applications
4 (a) Explain about classification of M-type tubes.
(b) Explain how cross field is used to generate oscillations in magnetron?
Determine the output power and efficiency of the magnetron.
5

6 Explain Hull cut off condition? Determine the equation for Hull off voltage.
7(a) Explain the necessity of strapping in magnetrons.
An X-band pulsed cylindrical magnetron has Vo =26kV, Io=27 A, Bo=0.336 Wb/sq.m,
(b)
α=4 cm, b=8 cm. Determine the cyclotron angular Frequency.
Determine the Hull cut-off voltage for a 8 cavity cylindrical magnetron with a neat
8
schematic diagram.
Explain how magnetron allows electron bunching to take place and prevents favoured
9
electrons from slipping away from their relative position.
Draw the schematic diagram of a cylindrical magnetron and determine the expressions for
10
Hull cut-off magnetic equation
An X-band pulsed cylindrical magnetron has Vo =32kV, Anode current Io=80 A,
Magnetic Flux density Bo=0.01 Wb/sq.m, Radius of the Cathode Cylinder α=5 cm,
Radius of the Vane edge to centre b=10 cm. Find
11
(i) The cyclotron angular Frequency.
(ii) the cut-off voltage for a fixed Bo
(iii) cut-off magnetic Field strength for a fixed Vo
Draw the schematic diagram of a cylindrical magnetron and determine the expressions for
12
Hull cut-off Voltage equation.

UNIT-IV

1(a) Explain the LSA mode of operation in a Gunn diode.

Illustrate the differences between transferred electron devices and avalanche transit time
(b)
devices.
With the help of RWH Theory, explain how negative resistance can be created in Gunn
2
diode.
Explain how Gunn diode is used as an oscillator? Explain with the help of circuit diagram.
3(a)

(b) Illustrate about Gunn domains.

4 Explain about Gunn effect.
5 How is it possible to exhibit negative resistance characteristics in an IMPATT diode?
6 Explain the Avalanche transit time diodes
Explain the Gunn effect using the two-valley theory.
7

8 Draw and explain the operation of IMPATT diode.

9 Explain various modes of operation of Gunn diode.
Draw and explain the schematic and working of TRAPATT diode. Use necessary voltage
10
and current waveforms
11 Explain the typical characteristics and applications of a Gunn diode
An IMPATT diode has a Cj of 0.05pF and Lp of 0.5nH, Cp is negligible. If the breakdown
12 voltage is 100V and the bias current is 100mA. Determine the resonant frequency and
efficiency. Assume the RF peak current as 0.8A and RL as 2Ω.

UNIT-V

1 Discuss the broadband transistor amplifier design.

2 Discuss the Low-Noise Amplifier Design.

3 Explain the principles impedance matching in microwave design.

4 Discuss briefly about Dielectric Resonator Oscillators.

5 Elaborate the Microwave filter design by the image parameter method.

6 Elaborate the Microwave filter design by the insertion loss method.

Discuss the design of RF and Microwave power amplifier.
7

8 Elaborate briefly about Transistor Microwave Oscillators

Explain briefly the goals of microwave amplifier design using Sij parameters and define
9
power gain, transducer gain and available power gain
10 With reference to RF transistor amplifier, discuss the considerations for stability and gain.
11 Discuss briefly about Dielectric Resonator Oscillators.
12 Elaborate the double stub matching techniques briefly.

UNIT-VI

1(a) Explain the importance of isolator in microwave bench setup.

 (b) Explain the Measurement of low power in microwave applications

Draw a neat diagram of a microwave bench setup and explain in detail about all the
2
components.
Give the block diagram for the measurement of attenuation at microwave frequencies
3
and explain the procedure.
Give the block diagram for the measurement of impedance at microwave frequencies
4
and explain the procedure.
5 Explain about the measurement of low and high VSWR.
6 Explain the principle of power measurement using Bolometric method
7(a) Explain the setup for measurement of Q of a cavity resonator
(b) Explain, how are microwave measurements different from low frequency measurements.
Explain different methods of measuring impedance of a terminating load in a microwave
8
system.
9(a) What is wavemeter? How it is used for microwave frequency measurements?
(b) Explain the slotted-line method for microwave measurement.
Draw the block diagram of a microwave setup for measurement of high microwave
10
powers and explain the procedure.
11 Explain any two methods of measuring microwave frequency.
Determine the SWR of a transmission system operating at 8GHz. The distance between
12(a) two minimum power points is 0.9mm on a slotted line whose velocity factor is unity.

(b) (b) Explain the precautions to be taken in Microwave Measurements.