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KSH13007 KSH13007: SEMIHOW REV.A1, Oct 2007

This document provides specifications for an 8 Ampere, 400V NPN silicon power transistor suitable for switching regulator and inverter applications. It lists maximum ratings for collector-emitter voltage, collector current, power dissipation and other parameters. Electrical characteristics include current gain, saturation voltages, switching times and output capacitance. Typical characteristics and package dimension diagrams are also included.

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0% found this document useful (0 votes)
64 views6 pages

KSH13007 KSH13007: SEMIHOW REV.A1, Oct 2007

This document provides specifications for an 8 Ampere, 400V NPN silicon power transistor suitable for switching regulator and inverter applications. It lists maximum ratings for collector-emitter voltage, collector current, power dissipation and other parameters. Electrical characteristics include current gain, saturation voltages, switching times and output capacitance. Typical characteristics and package dimension diagrams are also included.

Uploaded by

Manolo Doper
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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KSH130

007
KSH13007

◎ SEMIHOW REV.A1,Oct 2007


KSH130
007
KSH13007

Switch Mode series NPN silicon Power Transistor


- High voltage, high speed power switching
- Suitable for switching regulator, inverters motor controls

8 Amperes
NPN Silicon Power Transistor
Absolute Maximum Ratings TC=25℃ unless otherwise noted 80 Watts
CHARACTERISTICS SYMBOL RATING UNIT TO-220
1. Base
2. Collector
Collector-Base Voltage VCBO 700 V 3. Emitter
Collector-Emitter
Collector Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current(DC) IC 8 A
Collector Current(Pulse) ICP 16 A
Base Current IB 4 A
Collector Dissipation(Tc=25℃) PC 80 W 12
3
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -65~150 ℃

Electrical Characteristics TC=25℃ unless otherwise noted

CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit

Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 400 V

Emitter Cut-off Current IEBO VEB=9V,IC=0 1 ㎃

*DC Current Gain hFE1 VCE=5V,IC=2A 8 60


hFE2 VCE=5V,I
5V,IC=5A
5A 5 30

*Collector-Emitter Saturation Voltage VCE(sat) IC=2A,IB=0.4A 1 V


IC=5A,IB=1A 2 V
IC=8A,IB=2A 3 V

*Base-Emitter Saturation Voltage VBE(sat) IC=2A,IB=0.4A 1.2 V


IC=5A,IB=1A 1.6 V

Output Capacitance Cob VCB=10V, f=0.1MHz 110 ㎊

Current Gain Bandwidth Product fT VCE=10V,I


, C=0.5A 4 ㎒

Turn on Time ton 1.6 ㎲


Vcc=125V, Ic=5A
Storage Time tstg IB1=1A, IB2= -1A 3.0 ㎲
RL=50Ω
Fall Time tF 0.7 ㎲
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Note. Package Mark information.
R 15 ~ 28 S SemiHow Symbol
S
hFE1 26 ~ 39 YWW Z YWW Y year code,
Y; d WW
WW; weekk code
d
O
Classification O1(26~33), O2(31~39) KSH13007
Z hFE1 Classification
Y 37 ~ 50

◎ SEMIHOW REV.A1,Oct 2007


KSH130
007
Typical Characteristics

◎ SEMIHOW REV.A1,Oct 2007


KSH130
007
Typical Characteristics ( Continued )

◎ SEMIHOW REV.A1,Oct 2007


KSH130
Package Dimension

007
TO-
TO-220 (A)

9.90
9 90±0.20
0 20
.2
0 4 50±0.20
4.50
±0
0
3.6 1.30±0.20
φ
0±0.20
6.50
15.70±0.20
2.80±0.20

9.19±0.20

2.40±0.20
1.27±0.20
13.08±0.20

1.52±0.20
3.02±0.20
3
1

0.80±0.20
2.54typ
2.54typ 0.50±0.20

Dimensions in Millimeters

◎ SEMIHOW REV.A1,Oct 2007


KSH130
Package Dimension

007
TO-
TO-220 (B)

±0.20
.2
0 4.57±0.20
±0
4
3.8 1.27±0.20
φ
6.30±0.20
15.44±0.20
2.74±0.20

9.14±0.20

2.67±0.20
1.27±0.20
3.28±0.20

67±0.20
13

2.6

0.81±0.20
2.54typ
2.54typ 0.40±0.20

Dimensions in Millimeters

◎ SEMIHOW REV.A1,Oct 2007

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