JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23-6L Plastic-Encapsulate MOSFETS

CJL8205A Dual N-Channel MOSFET

V(BR)DSS RDS(on)MAX ID SOT-23-6L

 30 mΩ@4.5V 
20 V 5A
45mΩ@2.5V  

FEATURE APPLICATION
z TrenchFET Power MOSFET z Battery Protection
z Excellent RDS(on) z Load Switch
z Low Gate Charge z Power Management
z High Power and Current Handing Capability
z Surface Mount Package

MARKING Equivalent Circuit

G1 D1,D2 G2
6 5 4

8205A
1 2 3
S1 D1,D2 S2

ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Parameter Symbol Value Unit

Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain Current ID 6 A
Pulsed Drain Current (note 1) IDM 25 A
Thermal Resistance from Junction to Ambient (note 2) RθJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260 ℃

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Ta =25 ℃ unless otherwise specified

Parameter Symbol Test Condition Min Typ Max Unit

STATIC CHARACTERICTISCS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.6 0.8 1.5 V
VGS =4.5V, ID =3A 23 30 mΩ
Drain-source on-resistance (note 3) RDS(on)
VGS =2.5V, ID =3A 30 45 mΩ
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 12 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V
DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss 815 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 158 pF
Reverse Transfer Capacitance Crss 124 pF
SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time td(on) 16 ns
Turn-on rise time tr VDD=10V,VGS=4V, 8 ns
Turn-off delay time td(off) ID=1A,RGEN=10Ω 36 ns
Turn-off fall time tf 18 ns
Total Gate Charge Qg 14 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.5 nC
Gate-Drain Charge Qgd 2.5 nC
Notes :
1.Repetitive rating：Pluse width limited by maximum junction temperature
2.Surface Mounted on FR4 board，t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.

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Output Characteristics Transfer Characteristics
20 12
Ta=25℃ VGS=2.5V,3V,4V,5V VDS=3V
Pulsed
Pulsed
10
16

(A)
VGS=2V
(A)

8 Ta=25℃

ID
12
ID

Ta=100℃

DRAIN CURRENT
DRAIN CURRENT

VGS=1.5V
4
2

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5

DRAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE VGS (V)

RDS(ON) —— ID RDS(ON) —— VGS

50 300

Ta=25℃ Pulsed
Pulsed
250
40
(m)

(m)

ID=6A

VGS=2.5V 200
RDS(ON)

RDS(ON)

30
ON-RESISTANCE

ON-RESISTANCE

150

VGS=4.5V
20
Ta=100℃
100

10
50
Ta=25℃

0
1 2 3 4 5 6 7 0 1 2 3 4 5

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V)

IS —— VSD Threshold Voltage

8 1.2

Pulsed

1.0
(V)
IS (A)

VTH

1
0.8
THRESHOLD VOLTAGE

ID=250uA
SOURCE CURRENT

0.6
Ta=100℃
Ta=25℃

0.1 0.4

0.2

0.01 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125

SOURCE TO DRAIN VOLTAGE VSD (V) JUNCTION TEMPERATURE Tj (℃ )

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 SOT-23-6L Package Outline Dimensions

Dimensions In Millimeters Dimensions In Inches

Symbol
Min. Max. Min. Max.
A 1.050 1.250 0.041 0.049
A1 0.000 0.100 0.000 0.004
A2 1.050 1.150 0.041 0.045
b 0.300 0.500 0.012 0.020
c 0.100 0.200 0.004 0.008
D 2.820 3.020 0.111 0.119
E1 1.500 1.700 0.059 0.067
E 2.650 2.950 0.104 0.116
e 0.950(BSC) 0.037(BSC)
e1 1.800 2.000 0.071 0.079
L 0.300 0.600 0.012 0.024
θ 0° 8° 0° 8°

SOT-23-6L Suggested Pad Layout

NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.

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SOT-23-6L Tape and Reel

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