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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the 2SC4370 silicon NPN power transistor from SavantIC Semiconductor. It is packaged in a TO-220F case and is a complement to the 2SA1659 transistor. Key specifications include an absolute maximum collector-emitter voltage of 160V, collector current of 1.5A, and DC current gain ranging from 70 to 240. The transistor has applications in high voltage circuits.

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Javier Mendoza Castro
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45 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the 2SC4370 silicon NPN power transistor from SavantIC Semiconductor. It is packaged in a TO-220F case and is a complement to the 2SA1659 transistor. Key specifications include an absolute maximum collector-emitter voltage of 160V, collector current of 1.5A, and DC current gain ranging from 70 to 240. The transistor has applications in high voltage circuits.

Uploaded by

Javier Mendoza Castro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4370

DESCRIPTION
·With TO-220F package
·Complement to type 2SA1659
·High transition frequency

APPLICATIONS
·High voltage applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter

Absolute maximum ratings (Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 160 V

VCEO Collector-emitter voltage Open base 160 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 1.5 A

IB Base current 0.15 A

PC Collector dissipation TC=25 20 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

Free Datasheet http://www.Datasheet4U.com


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4370

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 160 V

VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V

VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.0 V

ICBO Collector cut-off current VCB=160V; IE=0 1.0 µA

IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA

hFE DC current gain IC=0.1A ; VCE=5V 70 240

fT Transition frequency IC=0.1A ; VCE=10V 100 MHz

COB Collector output capacitance f=1MHz;VCB=10V 25 pF

hFE Classifications

O Y

70-140 120-240

Free Datasheet http://www.Datasheet4U.com


SavantIC Semiconductor
www.datasheet4u.com
Product Specification

Silicon NPN Power Transistors 2SC4370

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)

Free Datasheet http://www.Datasheet4U.com

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