HY19P03 D/U/V

P-Channel Enhancement Mode MOSFET

Feature Pin Description

 -30V/-90A
RDS(ON)= 4.8mΩ(typ.)@VGS = 10V
RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V

 100% avalanche tested

 Reliable and Rugged
 Lead Free and Green Devices Available
(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S

Applications

 Power Management in DC/DC converter.

P-Channel MOSFET

Ordering and Marking Information

Package Code
D U V D: TO-252-2L U: TO-251-3L V:TO-251-3S
HY19P03 HY19P03 HY19P03
YYXXXJWW G YYXXXJWW G YYXXXJWW G Date Code Assembly Material
YYXXX WW G:Halogen Free

Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
nation finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise
customers to obtain the latest version of relevant information to verify before placing orders.

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Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Drain Current-Continuous Tc=25°C -90 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C -360 A
Tc=25°C -90 A
ID Continuous Drain Current
Tc=100°C -59 A
Tc=25°C 50 W
PD Maximum Power Dissipation
Tc=100°C 20 W
RJC Thermal Resistance, Junction-to-Case 2.5 °C/W
RJA Thermal Resistance, Junction-to-Ambient ** 110 °C/W
EAS SinglePulsed-Avalanche Energy *** L=0.3mH 358*** mJ

Note: * Repetitive rating; pulse width limited by max junction temperature.

** Surface mounted on FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HY19P03
Symbol Parameter Test Conditions Unit
Min Typ Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250uA -30 - - V
VDS=-30V, VGS=0V - - -1 uA
IDSS Drain-to-Source Leakage Current
TJ=55°C - - -10 uA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250uA -1.0 -1.7 -3.0 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
VGS=-10V,ID= -45A - 4.8 6 mΩ
RDS(ON)* Drain-Source On-state Resistance
VGS=-4.5V,ID= -45A 6.4 8 mΩ
Diode Characteristics
VSD* Diode Forward Voltage ISD= -45A,VGS=0V - -0.82 -1.3 V
trr Reverse Recovery Time - 25 - ns
ISD= -45A,dI/dt=100A/us
Qrr Reverse Recovery Charge - 20 - nC

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Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

HY19P03
Symbol Parameter Test Conditions Unit
Min Typ Max
Dynamic Characteristics
VGS=0V,VDS=0V,F=1
RG Gate Resistance - 3.5 - Ω
MHz
Ciss Input Capacitance VGS=0V, - 4787 -
Coss Output Capacitance VDS=-15V, - 461 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 329 -
td(ON) Turn-on Delay Time - 12 -
Tr Turn-on Rise Time VDD= -15V,RG=3Ω, - 16 -
ns
td(OFF) Turn-off Delay Time IDS= -45A,VGS=10V - 75 -
Tf Turn-off Fall Time - 37 -
Gate Charge Characteristics
Qg Total Gate Charge - 90 -
VDS = -24V, VGS= -10V，
Qgs Gate-Source Charge - 7.6 - nC
ID= -45A,
Qgd Gate-Drain Charge - 19 -

Note: *Pulse test; pulse width ≤ 300us，duty cycle ≤ 2%

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HY19P03 D/U/V
Typical Operating Characteristics

Figure 1: Power Dissipation Figure 2: Drain Current

Power Dissipation (w)

-ID-Drain Current(A)
Voltage
Tc-Case Temperature(℃) Tc-Case Temperature(℃)

Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance

Normalized Transient
-ID-Drain Current(A)

Impedance
Voltage

Thermal
Zθ jc

-VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal

Impedance, Junction-to-Case

Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance

RDS(ON)-ON-Resistance(Ω)
-ID-Drain Current(A)

Voltage
Voltage

-VDS-Drain-Source Voltage (V) - ID-Drain Current(A)

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HY19P03 D/U/V

Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward
Normalized On-Resistance

-IS-Source Current (A)

Voltage

Voltage
Tj-Junction Temperature (℃) -VSD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics

-VGS-Gate-Source Voltage (V)
C-Capacitance(pF)
Voltage

Voltage

-VDS-Drain-Source Voltage (V) Q G-Gate Charge (nC)

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Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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HY19P03 D/U/V
Device Per Unit

Package Type Unit Quantity

TO-252-2L Tube 75
TO-251-3L Tube 75
TO-251-3S Tube 75

Package Information
TO-252-2L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.00 - 0.20
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 9.40 10.10 10.50
L 1.38 1.50 1.75
L1 2.90REF
L2 0.51BSC
L3 0.88 - 1.28
L4 - - 1.00
L5 1.65 1.80 1.95
θ 0° - 8°

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HY19P03 D/U/V

TO-251-3L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b2 0.00 0.04 0.10
b2' 0.00 0.04 0.10
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 16.22 16.52 16.82
L1 9.15 9.40 9.65
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95

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TO-251-3S

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 2.20 2.30 2.40
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.50
c 0.43 0.53 0.63
D 5.98 6.10 6.22
D1 5.30REF
E 6.40 6.60 6.80
E1 4.63 - -
e 2.286BSC
H 10.00 11.22 11.44
L1 3.90 4.10 4.30
L3 0.88 1.02 1.28
L5 1.65 1.80 1.95

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HY19P03 D/U/V
Classification Profile

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

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Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³
Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³ Volume mm³
Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Worldwide Sales and Service: [email protected]
Technical Support: technical @ hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
No.105, 5th Fengcheng Road, Economic and Technological Development Zone, Xi'an, China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: [email protected]
Web net: www.hooyi.cc

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