BCW32LT1G

General Purpose
Transistors
NPN Silicon
Features http://onsemi.com
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
COLLECTOR
Qualified and PPAP Capable 3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant 1
BASE
MAXIMUM RATINGS
2
Rating Symbol Value Unit
EMITTER
Collector-Emitter Voltage VCEO 32 Vdc
Collector-Base Voltage VCBO 32 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc 3
Collector Current − Continuous IC 100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the 1
device. If any of these limits are exceeded, device functionality should not be 2
assumed, damage may occur and reliability may be affected.
SOT−23 (TO−236AB)
CASE 318
THERMAL CHARACTERISTICS STYLE 6
Characteristic Symbol Value Unit
Total Device Dissipation PD mW MARKING DIAGRAM
FR-5 Board(1) 225
TA = 25°C
Derate above 25°C 1.8 mW/°C
D2 M G
Thermal Resistance, RqJA 556 °C/W G
Junction−to−Ambient
1
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25°C D2 = Device Code
Derate above 25°C 2.4 mW/°C M = Date Code*
G = Pb−Free Package
Thermal Resistance, RqJA 417 °C/W
(Note: Microdot may be in either location)
Junction−to−Ambient
*Date Code orientation and/or overbar may
Junction and Storage Temperature TJ, Tstg −55 to +150 °C vary depending upon manufacturing location.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
ORDERING INFORMATION

Device Package Shipping†

BCW32LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
NSVBCW32LT1G SOT−23 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:

August, 2014 − Rev. 3 BCW32LT1/D
 BCW32LT1G

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO 32 − − Vdc
(IC = 2.0 mAdc, VEB = 0)
Collector −Base Breakdown Voltage V(BR)CBO 32 − − Vdc
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO
(VCB = 32 Vdc, IE = 0) − − 100 nAdc
(VCB = 32 Vdc, IE = 0, TA = 100°C) − − 10 mAdc

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 200 − 450
Collector −Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 0.5 mAdc) − − 0.25
Base −Emitter On Voltage VBE(on) Vdc
(IC = 2.0 mAdc, VCE = 5.0 Vdc) 0.55 − 0.70

SMALL− SIGNAL CHARACTERISTICS

Output Capacitance Cobo − − 4.0 pF
(IE = 0, VCB = 10 Vdc, f = 1.0 MHz)
Noise Figure NF − − 10 dB
(IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

20 100
IC = 1.0 mA BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
50
RS = 0 IC = 1.0 mA RS ≈ ∞
300 mA 20
en, NOISE VOLTAGE (nV)

300 mA
In, NOISE CURRENT (pA)

10
10 100 mA
5.0
7.0 100 mA
2.0
5.0
1.0
10 mA
30 mA 0.5 30 mA
3.0
0.2 10 mA

2.0 0.1
10 20 50 100 200 500 1k 2k 5k 10k 10 20 50 100 200 500 1k 2k 5k 10k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 1. Noise Voltage Figure 2. Noise Current

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 BCW32LT1G

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

500k 1M
200k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz
RS , SOURCE RESISTANCE (OHMS)

RS , SOURCE RESISTANCE (OHMS)

100k 200k
50k 100k
20k 50k
10k 20k
5k 10k
2.0 dB 1.0 dB
2k 5k
3.0 dB 4.0 dB
1k 2k 2.0 dB
6.0 dB 3.0 dB
500 10 dB
1k
500 5.0 dB
200
100 200 8.0 dB
50 100
10 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz

500k
10 Hz to 15.7 kHz
200k
RS , SOURCE RESISTANCE (OHMS)

100k
50k
Noise Figure is defined as:

ǒ Ǔ
20k
en2 ) 4KTRS ) In 2RS2 1ń2
10k NF + 20 log10
5k 4KTRS
1.0 dB
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
2k 2.0 dB I = Noise Current of the Transistor referred to the input.
1k 3.0 dB
n (Figure 4)
500 K = Boltzman’s Constant (1.38 x 10−23 j/°K)
5.0 dB
200 T = Temperature of the Source Resistance (°K)
8.0 dB R = Source Resistance (W)
100
50 S
10 20 30 50 70 100 200 300 500 700 1k
IC, COLLECTOR CURRENT (mA)

Figure 5. Wideband

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 BCW32LT1G

TYPICAL STATIC CHARACTERISTICS

400
TJ = 125°C
h FE, DC CURRENT GAIN

200 25°C

-55°C
100
80

60 VCE = 1.0 V
VCE = 10 V
40
0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0 100
TJ = 25°C TA = 25°C
IB = 500 mA
IC, COLLECTOR CURRENT (mA) PULSE WIDTH = 300 ms
0.8 80 DUTY CYCLE ≤ 2.0% 400 mA

IC = 1.0 mA 10 mA 50 mA 100 mA 300 mA

0.6 60

200 mA
0.4 40

100 mA
0.2 20

0 0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region Figure 8. Collector Characteristics

1.4 1.6
*APPLIES for IC/IB ≤ hFE/2
θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C
1.2
0.8
25°C to 125°C
V, VOLTAGE (VOLTS)

1.0
*qVC for VCE(sat)
0
0.8 VBE(sat) @ IC/IB = 10 - 55°C to 25°C

0.6 -0.8
VBE(on) @ VCE = 1.0 V
0.4 25°C to 125°C
-1.6
0.2 qVB for VBE - 55°C to 25°C
VCE(sat) @ IC/IB = 10
0 -2.4
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages Figure 10. Temperature Coefficients

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 BCW32LT1G

TYPICAL DYNAMIC CHARACTERISTICS

10
TJ = 25°C
7.0 f = 1.0 MHz

Cib
5.0

C, CAPACITANCE (pF)
Cob
3.0

2.0

1.0
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

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 BCW32LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AP

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3 THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E HE MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.89 1.00 1.11 0.035 0.040 0.044
c A1 0.01 0.06 0.10 0.001 0.002 0.004
1 2
b 0.37 0.44 0.50 0.015 0.018 0.020
b c 0.09 0.13 0.18 0.003 0.005 0.007
e 0.25 D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
q e 1.78 1.90 2.04 0.070 0.075 0.081
L 0.10 0.20 0.30 0.004 0.008 0.012
L1 0.35 0.54 0.69 0.014 0.021 0.029
A HE 2.10 2.40 2.64 0.083 0.094 0.104
q 0° −−− 10 ° 0° −−− 10°
L
A1 STYLE 6:
L1 PIN 1. BASE
2. EMITTER
VIEW C 3. COLLECTOR

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035

0.8
0.031
SCALE 10:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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PUBLICATION ORDERING INFORMATION

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