2SC4541

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC4541
Power Amplifier Applications
Unit: mm
Power Switching Applications

· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)

· High speed switching time: tstg = 0.5 µs (typ.)
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
· Complementary to 2SA1736

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 80 V

Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 6 V
Collector current IC 3 A
Base current IB 0.6 A
Collector power dissipation PC 500 mW JEDEC ―

PC JEITA SC-62
Collector power dissipation 1000 mW
(Note) TOSHIBA 2-5K1A
Junction temperature Tj 150 °C
Weight: 0.05 g (typ.)
Storage temperature range Tstg −55 to 150 °C

2
Note: Mounted on ceramic substrate (250 mm × 0.8 t)

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 80 V, IE = 0 ― ― 0.1 µA

Emitter cut-off current IEBO VEB = 6 V, IC = 0 ― ― 0.1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V
hFE (1) VCE = 2 V, IC = 100 mA 120 ― 400
DC current gain
hFE (2) VCE = 2 V, IC = 2 A 40 ― ―
Collector-emitter saturation voltage VCE (sat) IC = 1.5 A, IB = 75 mA ― ― 0.5 V
Base-emitter saturation voltage VBE (sat) IC = 1.5 A, IB = 75 mA ― ― 1.2 V
Transition frequency fT VCE = 2 V, IC = 100 mA ― 100 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF

Turn-on time ton OUTPUT ― 0.1 ―

20 µs INPUT IB1

20 Ω
IB1 IB2
Switching time Storage time tstg ― 0.5 ― µs
30 V
IB2

IB1 = −IB2 = 75 mA,

Fall time tf DUTY CYCLE ≤ 1% ― 0.1 ―

Marking

Type name

KD

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IC – VCE hFE – IC
4 1000

Common emitter
Ta = 25°C 300 Ta = 100°C
60 50
(A)

3 40

hFE
30 100
IC

20
25

DC current gain
Collector current

2 15 30 -25

10

10

1 IB = 5 mA

3 Common emitter
VCE = 2 V
0
0 1
0 1 2 3 4 5 1 3 10 30 100 300 1000 3000

Collector-emitter voltage VCE (V) Collector current IC (mA)

VCE (sat) – IC VBE (sat) – IC

10 100
Common emitter Common emitter
IC/IB = 20
Collector-emitter saturation voltage

3 IC/IB = 20
30
Base-emitter saturation voltage

1 10
VCE (sat) (V)

VBE (sat) (V)

0.3 3

Ta = -25°C
0.1 Ta = 100°C 1

0.03 25 0.3 25
-25 100

0.01 0.1
1 3 10 30 100 300 1000 3000 1 3 10 30 100 300 1000 3000

Collector current IC (mA) Collector current IC (mA)

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IC – VBE Safe Operating Area

3.0 10
Common emitter IC max (pulse)*
VCE = 2 V IC max
2.5 (continuous)
3 *100 ms *10 ms *t = 1 ms
(A)

2.0

(A)
IC

1
Collector current

IC
1.5 **: DC operation
Ta = 100°C 25 Ta = 25°C

Collector current
0.3
40 ´ 50 ´ 0.8 t
-25 **: DC operation
1.0
Ta = 25°C
0.1 250 mm2 ´ 0.8 t
**: DC operation
0.5 Ta = 25°C

0.03 *: Single nonrepetitive pulse

0 Ta = 25°C
0 0.4 0.8 1.2 1.6 2.0 **: Mounted on ceramic substrate
0.01 Curves must be derated linearly VCEO
Base-emitter voltage VBE (V) with increase in temperature max
0.005
0.1 0.3 1 3 10 30 100

Collector-emitter voltage VCE (V)

PC – Ta
1.4
(1) Mounted on ceramic substrate
2
PC (W)

1.2 (250 mm ´ 0.8 t)

(2) No heat sink

(1)
1.0
Collector power dissipation

0.8

0.6
(2)

0.4

0.2

0
0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

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RESTRICTIONS ON PRODUCT USE 000707EAA

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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