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Experiment No. 8

The document summarizes a laboratory experiment on field effect transistors. The experiment involved measuring the input and output characteristics of an enhancement mode MOSFET. For the input characteristic, drain current was measured with varying gate voltages at a fixed drain-source voltage. For the output characteristic, drain current and drain voltage were measured at different gate voltages. The results showed that increasing the positive gate voltage decreases the channel resistance and increases drain current. Additionally, an enhancement mode MOSFET operates like a normally open switch that turns on with a positive gate voltage.

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133 views6 pages

Experiment No. 8

The document summarizes a laboratory experiment on field effect transistors. The experiment involved measuring the input and output characteristics of an enhancement mode MOSFET. For the input characteristic, drain current was measured with varying gate voltages at a fixed drain-source voltage. For the output characteristic, drain current and drain voltage were measured at different gate voltages. The results showed that increasing the positive gate voltage decreases the channel resistance and increases drain current. Additionally, an enhancement mode MOSFET operates like a normally open switch that turns on with a positive gate voltage.

Uploaded by

LoraineCundangan-medina
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Laboratory Report

Experiment No. 8
THE FIELD EFFECT TRANSISTOR FAMILIARIZATION
Course/section: ECE 005 / ME51FA1 Instructor: ENGR. NELOR JANE L. AGUSTIN
Group No.: Date Performed: FEBRUARY 18, 2020
Group Members:
1. CANTONG, JOSHUA MARTIN
2. CHUA, KENNETH C
3. CRISOSTOMO, CHRISTIAN
4. CUEVAS, LORENZE LANCE
5. DOLOSA, DAREN JEAN
6. INOCENCIO, KYLE MATTHEW

6. Assessment (Rubric for Laboratory Performance):


7. Data and Results:

Activity 1: ENHANCEMENT MODE MOSFET INPUT CHARACTERISTIC

Channel Y1: current flow from the drain to the source


Channel Y2: sine waveform supplied to the gate of the MOSFET

Activity 2: ENHANCEMENT MODE MOSFET OUTPUT CHARACTERISTIC

Voltage Output: 2V
Voltage Output: 4V

Voltage Output: 6V
Voltage Output: 8V

8. Observation:

We have observed that with a fixed VDS drain-source voltage connected across the

eMOSFET we can plot the values of drain current, ID with varying values of VGS to obtain a graph

of the mosfets forward DC characteristics. In addition, increasing this positive gate voltage will

cause the channel resistance to decrease further causing an increase in the drain current, ID

through the channel. In other words, for an enhancement mode MOSFET: +V GS turns the transistor

“ON”, while a zero or -VGS turns the transistor “OFF”. As a result, the enhancement-mode MOSFET

is equivalent to a “normally-open” switch.


9. Interpretation:

Generally, enhancement-mode MOSFETs make excellent electronics switches due

to their low “ON” resistance and extremely high “OFF” resistance as well as their infinitely high

input resistance due to their isolated gate. In an enhancement-mode MOSFET, the electrostatic

field created by the application of a gate voltage enhances the conductivity of the channel, rather

than deplete the channel as in the case of a depletion-mode MOSFET.

10. Conclusion:

In conclusion, a Field Effect Transistor (FET) is a three terminal device. The

MOSFET is the most commonly used active device in electronics and because of its

characteristics, MOSFETs are also widely used in high-power applications, mixed signal (analog

and digital) circuitry, and analog applications. In this laboratory experiment, we measure the

characteristics of a MOSFET and to compare these characteristics with the theoretically predicted

characteristics. Lastly, the transfer characteristic relates drain current (ID) response to the input

gate-source driving voltage (VGS). Since the gate terminal is electrically isolated from the remaining

terminals drain and source. The gate current is essentially zero, so that gate current is not part of

device characteristics.
11. Assessment Task:

a. What is the major difference in construction of the D-MOSFET and the E-MOSFET?

The Depletion mode MOSFET, is normally ON so there is continuity between the Drain
and Source pins, like a closed switch, to turn it OFF, you increase the Gate Voltage
beyond the threshold voltage level. The Enhancement mode MOSFET is normally OFF
so there is a high impedance between Drain and Source, like an open switch, to turn it
ON, you increase the Gate Voltage beyond the threshold voltage. Basically, in D-
MOSFET, it can conduct my both methods, enhancement or depletion method but, E-
MOSFET can only make use of enhancement method.

b. If you measured that the drain voltage of the FET is equal to the supply voltage.
What would be the possible causes?

The operation of a FET when its drain voltage is equal to the supply voltage can best be
described as operating within its “cut-off” region. Specifically, when the input voltage, (VIN)
causes the gate of the transistor to zero, the FET conducts virtually no current and the
output voltage (VOUT) is equal to the supply voltage VD. So the FET is sensibly “OFF”.

c. Why doesn't the drain current change when an open occurs in the gate circuit of a
zero-biased D-M0SFET circuit?

In a zero-biased D-MOSFET, the gate-to-source voltage ideally remains zero when an


open occurs in the gate circuit; thus, the drain current doesn't change, and the bias
appears normal.

d. If the gate of an E-MOSFET becomes shorted to ground in a circuit with voltage-


divider bias, what is the drain voltage?

There is an increase in drain current, ID for a given increase in gate-source voltage, VGS
determines the slope or gradient of the curve for constant values of VDS. Then we can see
that turning an enhancement MOS transistor “ON” is a gradual process and in order for
us to use the MOSFET as an amplifier we must bias its gate terminal at some point above
its threshold level.

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