SD2931-10

RF power transistor:
HF/VHF/UHF N-channel power MOSFETs
Datasheet - production data

• POUT = 150 W min. with 14 dB gain @ 175 MHz

• Thermally enhanced packaging for lower
junction temperatures

Description
The SD2931-10 is a gold metalized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
M174 signal applications up to 230 MHz.
Epoxy sealed
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25% lower thermal resistance),
Figure 1. Pin connection representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
4 1 critical factors.

3 2

1. Drain 3. Gate
2. Source 4. Source

Features
• Gold metalization
• Excellent thermal stability
• Common source configuration
Table 1. Device summary
Order code Marking Base qty. Package Packaging(1)

SD2931-10W SD2931-10 25 pcs M174 Plastic tray

1. For more details please refer to Chapter 11: Marking, packing and shipping specifications.

July 2016 DocID7076 Rev 10 1/19

This is information on a product in full production. www.st.com
Contents SD2931-10

Contents

1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

6 Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

8 Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

9 Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

11 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17

12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2/19 DocID7076 Rev 10

SD2931-10 Electrical data

1 Electrical data

1.1 Maximum ratings

(TCASE = 25 °C).

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V(BR)DSS(1) Drain source voltage 125 V

VDGR Drain-gate voltage (RGS = 1 MΩ) 125 V
VGS Gate-source voltage ±40 V
ID Drain current 20 A
PDISS Power dissipation 389 W
TJ Max. operating junction temperature 200 °C
TSTG Storage temperature -65 to +150 °C
1. TJ = 150°C

1.2 Thermal data

Table 3. Thermal data

Symbol Parameter Value Unit

RthJC Junction - case thermal resistance 0.45 °C/W

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Electrical characteristics SD2931-10

2 Electrical characteristics

(TCASE = 25 °C).

2.1 Static

Table 4. Static (per side)

Symbol Test conditions Min Typ Max Unit

V(BR)DSS VGS = 0 IDS = 100 mA 125 V

IDSS VGS = 0 VDS = 50 V 50 μA

IGSS VGS = 20 VDS = 0 250 nA

(1)
VGS(Q) VDS = 10 V ID = 250 mA See table below V
VDS(ON) VGS = 10 V ID = 10 A 3.0 V
GFS VDS = 10 V ID = 5 A 5 6 mho
CISS VGS = 0 VDS = 50 V f = 1 MHz 480 pF
COSS VGS = 0 VDS = 50 V f = 1 MHz 190 pF

CRSS VGS = 0 VDS = 50 V f = 1 MHz 18 pF

1. VGS(Q) sorted with alpha/numeric code marked on unit.

2.2 Dynamic

Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit

POUT VDD = 50 V IDQ = 250 mA f = 175 MHz 150 W

GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB
nD VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 %

Load VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz

10:1 VSWR
mismatch All phase angles

4/19 DocID7076 Rev 10

SD2931-10 Electrical characteristics

Table 6. VGS sorts

Symbol Value Symbol Value

A 2.0 - 2.1 K 2.9 - 3.0

B 2.1 - 2.2 L 3.0 - 3.1
C 2.2 - 2.3 M 3.1 - 3.2
D 2.3 - 2.4 N 3.2 - 3.3
E 2.4 - 2.5 P 3.3 - 3.4
F 2.5 - 2.6 Q 3.4 - 3.5
G 2.6 - 2.7 R 3.5 - 3.6
H 2.7 - 2.8 S 3.6 - 3.7
J 2.8 - 2.9

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Transient thermal impedance SD2931-10

3 Transient thermal impedance

Figure 2. Transient thermal impedance

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6/19 DocID7076 Rev 10

SD2931-10 Transient thermal impedance

Figure 3. Transient thermal impedance model

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5 2KP &  )

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DocID7076 Rev 10 7/19

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Impedance data SD2931-10

4 Impedance data

Figure 4. Impedance data

ZDL

Typical Input Typical Drain

Impedance Load Impedance

G
Zin

Table 7. Impedance data

Freq ZIN (Ω) ZDL (Ω)

30 MHz 1.7 - j 5.7 6.8 + j 0.9

175 MHz 1.2 - j 2.0 2.0 + j 2.4

8/19 DocID7076 Rev 10

SD2931-10 Typical performance

5 Typical performance

Figure 5. Capacitance vs drain-source voltage Figure 6. Drain current vs gate voltage

10000
20

Tc=-20 °C

ID, DRAIN CURRENT (A)

f =1MHz Tc=+25 °C
C, CAPACITANCE (pF)

15
1000
Ciss

10 Tc=+80 °C
Coss
VDS = 10 V
100
5

Crss

10 0
0 10 20 30 40 50 2 2.5 3 3.5 4 4.5 5 5.5 6

VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)

Figure 7. Gate-source voltage vs case Figure 8. Maximum thermal resistance vs case

temperature temperature
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

1.12
0.6
1.08 Id =9A
Id =10A Id =7A
1.04 Id =5A
Id =11A 0.56
RTH(j-c) (°C/W)

0.96 0.52
Id =4A
0.92 Id =2A

Id =1A 0.48
0.88
Vds= 10 V Id =.25A
0.84
Id =.1A
0.44
0.8 25 35 45 55 65 75 85
-25 0 25 50 75 100 Tc, CASE TEMPERATURE (°C)
Tc, CASE TEMPERATURE (°C)

Figure 9. Safe operating area

100
Ids(A)

10

(1)

1
1 10 100 1000
Vds(V)
(1) Current in this area may be limited by Rds(on)

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Typical performance @ 175 MHz SD2931-10

6 Typical performance @ 175 MHz

Figure 10. Output power vs input power Figure 11. Output power vs input power
270
270
Pout, OUTPUT POWER (W)

240 Tc =-20 °C

Pout, OUTPUT POWER (W)

Vdd= 50V
240
210
Tc =+25 °C
210
180 Vdd= 40V
180
150
150 Tc =+80 °C
120
120
90
90
60 f= 175MHz Vdd= 50V
60
30 Idq= 250mA Idq= 250mA
30 f= 175MHz
0
0
0 5 10 15 20 25
0 5 10 15 20 25
Pin, INPUT POWER (W)
Pin, INPUT POWER(W)

Figure 12. Power gain vs output power Figure 13. Efficiency vs output power

18 80

16 70
Gp, POWER GAIN (dB)

Nd, EFFICIENCY (%)

14 60

12 50

10 40
Vdd=50V Vdd=50V
8 Idq=250mA 30 Idq=250mA
f=175Mhz f=175Mhz
6 20
0 50 100 150 200 250 0 50 100 150 200 250
Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W)

Figure 14. Output power vs supply voltage Figure 15. Drain current vs gate-source voltage
270 20
240 Pin =10W
Tc=-20 °C
Pout,OUTPUT POWER(W)

210
ID, DRAIN CURRENT (A)

Tc=+25 °C
15
Pin =5W
180

150
Pin =2.5W 10 Tc=+80 °C
120

90
5
60
Idq= 250mA
30 f= 175MHz

0 0
24 28 32 36 40 44 48 52 2 2.5 3 3.5 4 4.5 5 5.5 6

Vdd,DRAIN VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V)

10/19 DocID7076 Rev 10

SD2931-10 Test circuit

7 Test circuit

Figure 16. 175 MHz schematic (production test circuit)

Note: All dimensions in inches

REF. 1021579C

Table 8. Component part list

Component Description

T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long

T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long
FB1 Toroid X 2, 0.5” OD .312” ID 850μ 2 turns
FB2, FB3 VK200
FB4 Shield bead, 1” OD 0.5” ID 850μ 3 turns
L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long
PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
R1, R3 470 ohm 1 W chip resistor
R2 360 ohm 1/2 W resistor
R4 20 Kohm 10 turn potentiometer
R5 560 ohm 1 W resistor
C1, C11 470 pF ATC chip cap
C2 43 pF ATC chip cap
C3, C8, C9 Arco 404, 12-65 pF
C4 Arco 423, 16-100 pF

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Test circuit SD2931-10

Table 8. Component part list (continued)

Component Description

C5 120 pF ATC chip cap

C6 0.01 μF ATC chip cap
C7 30 pF ATC chip cap
C10 91 pF ATC chip cap
C12, C15 1200 pF ATC chip cap
C13, C14,C16, C17 0.01 μF / 500 V chip cap
C18 10 μF 63 V electrolytic capacitor

Figure 17. 175 MHz test circuit photomaster

4 inches

6.4 inches

Figure 18. 175 MHz test circuit

12/19 DocID7076 Rev 10

SD2931-10 Typical performance @ 30 MHz

8 Typical performance @ 30 MHz

Figure 19. Output power vs input power Figure 20. Power gain vs output power

250
Pout, OUTPUT POWER (W)

30
Vdd = 50 V

PG, POWER GAIN (dB)

200 29

150 28

Vdd = 40 V 27
100
26 f = 30 MHz
f = 30 MHz VDD = 50 V
50
IDQ = 250 mA 25 IDQ = 250 mA

0 24
0 0.1 0.2 0.3 0.4 0.5 0 40 80 120 160 200
Pin, INPUT POWER (W) Pout, OUTPUT POWER (W)

Figure 21. Efficiency vs output power Figure 22. Output power vs supply voltage

70 200
Pin=.31 W
60
Pin=.22 W
Efficiency (%)

50 150
Pout(W)

40
30 f = 30 MHz 100 Pin=.13 W

20 VDD = 50 V
IDQ = 250 mA f = 30 MHz
10 50
IDQ = 250 mA
0
0 40 80 120 160 200 0
Pout, OUTPUT POWER (W) 24 28 32 36 40 44 48 52
VDD(V)

Figure 23. Output power vs gate voltage

200
Pout, OUTPUT POWER (W)

T= +25 °C
T= -20 °C
150

100 T= +80 °C

VDD = 50 V
50 IDQ = 250 mA
f = 30 MHz
Pin = Constant
0
0 1 2 3 4 5 6

VGS GATE-SOURCE VOLTAGE (V)

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Test circuit @ 30 MHz SD2931-10

9 Test circuit @ 30 MHz

Figure 24. 30 MHz test circuit schematic (engineering test circuit)

Figure 25. 30 MHz test circuit part list

Symbol Description

T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long
T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long
FB1 Toroid 1.7” OD .30” ID 220 μ 4 turns
FB2 Surface mount EMI shield bead
FB3 Toroid 1.7” OD .300” ID 220μ 3 turns
RFC1 Toroid 0.5” OD 0.30” ID 125μ 4 turns 12 awg wire
PCB 0.62” woven fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55
R1, R3 1 KΩ 1 W chip resistor
R2 680 Ω 3 W wirewound resistor
C1,C4,C6,C7,C8,
0.1 μF ATC chip cap
C9, C11,C12,C13
C2, C3 750 pF ATC chip cap
C5 470 pF ATC chip cap
C10 10 μF 63 V electrolytic capacitor
C14 100 μF 63 V electrolytic capacitor

14/19 DocID7076 Rev 10

SD2931-10 Package information

10 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

Figure 26. M174 (0.500 DIA 4/L N/HERM W/FLG) package outline

Controlling Dimension: Inches 1011000D

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Package information SD2931-10

Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) package mechanical data
mm. Inch
Dim.
Min Typ Max Min Typ Max

A 5.56 5.584 0.219 0.230

B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130

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SD2931-10 Marking, packing and shipping specifications

11 Marking, packing and shipping specifications

Table 10. Packing and shipping specifications

Pcs per Dry pack
Order code Packaging VGS Lot code
tray humidity

SD2931-10W Plastic tray 25 < 10 % Not mixed Not mixed

Figure 27. Marking drawing

Table 11. Marking specifications

Symbol Description

W Wafer process code

X VGS sort
CZ Assembly plant
xxx Last 3 digit of diffusion lot
VY Diffusion plant
MAR County of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week

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Revision history SD2931-10

12 Revision history

Table 12. Document revision history

Date Revision Changes

09-Sep-2004 4
17-Jun-2004 5 Updated Table 5: Dynamic on page 4
Updated Table 4: Static (per side), Table 5: Dynamic and Table 6:
04-Mar-2008 6
VGS sorts on page 5
08-Feb-2011 7 Inserted Chapter 11: Marking, packing and shipping specifications.
12-Jan-2012 8 Inserted Chapter 3: Transient thermal impedance.
19-Dec-2012 9 Updated Table 10: Packing and shipping specifications
14-Jul-2016 10 Updated VGS value in Table 2: Absolute maximum ratings.

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SD2931-10

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DocID7076 Rev 10 19/19

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