MOSFET

MetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM
OptiMOSTMFDPower-Transistor,250V
IPP220N25NFD

DataSheet
Rev.2.0
Final

PowerManagement&Multimarket
 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

1Description TO-220-3

Features tab
•N-channel,normallevel
•FastDiode(FD)withreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21

Drain
Table1KeyPerformanceParameters Pin 2, tab

Parameter Value Unit

Gate
VDS 250 V Pin 1
RDS(on),max 22 mΩ
ID 61 A Source
Pin 3

Type/OrderingCode Package Marking RelatedLinks

IPP220N25NFD PG-TO220-3 220N25NF -

1)
J-STD20 and JESD22
Final Data Sheet 2 Rev.2.0,2014-02-06
 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 3 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
at 25 °C
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 61 TC=25°C
Continuous drain current ID A
- - 44 TC=100°C
Pulsed drain current 1) ID,pulse - - 244 A TC=25°C
Avalanche energy, single pulse EAS - - 610 mJ ID=37A,RGS=25Ω
ID=122A,VDS=125V,
Reversediodepeakdv/dt dv/dt - - 60 kV/µs
di/dt=1500A/µs,Tj,max=175°C
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 300 W TC=25°C
IEC climatic category;
Operating and storage temperature Tj,Tstg -55 - 175 °C
DIN IEC 68-1: 55/175/56

3Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.3 0.5 K/W -
Thermal resistance, junction - ambient,
RthJA - - 62 K/W -
minimal footprint
Thermal resistance, junction - ambient,
RthJA - - 40 K/W -
6 cm2 cooling area 2)

1)
See figure 3
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet 4 Rev.2.0,2014-02-06
 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

4Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 250 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=270µA
- 0.1 1 VDS=200V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=200V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) - 19 22 mΩ VGS=10V,ID=61A
Gate resistance RG - 2.5 3.8 Ω -
Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=61A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 5320 7076 pF VGS=0V,VDS=125V,f=1MHz
Output capacitance Coss - 299 398 pF VGS=0V,VDS=125V,f=1MHz
Reverse transfer capacitance Crss - 6 13 pF VGS=0V,VDS=125V,f=1MHz
VDD=125V,VGS=10V,ID=30.5A,
Turn-on delay time td(on) - 14 - ns
RG,ext=1.6Ω
VDD=125V,VGS=10V,ID=30.5A,
Rise time tr - 10 - ns
RG,ext=1.6Ω
VDD=125V,VGS=10V,ID=30.5A,
Turn-off delay time td(off) - 26 - ns
RG,ext=1.6Ω
VDD=125V,VGS=10V,ID=30.5A,
Fall time tf - 8 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 24 - nC VDD=125V,ID=61A,VGS=0to10V
Gate to drain charge Qgd - 7 - nC VDD=125V,ID=61A,VGS=0to10V
Switching charge Qsw - 16 - nC VDD=125V,ID=61A,VGS=0to10V
Gate charge total Qg - 65 86 nC VDD=125V,ID=61A,VGS=0to10V
Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=61A,VGS=0to10V
Output charge Qoss - 144 - nC VDD=125V,VGS=0V

1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 5 Rev.2.0,2014-02-06
 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continous forward current IS - - 61 A TC=25°C
Diode pulse current 1)
IS,pulse - - 244 A TC=25°C
Diode hard commutation current 2)
IS,hard - - 122 A -
Diode forward voltage VSD - 1 1.2 V VGS=0V,IF=61A,Tj=25°C
Reverse recovery time trr - 128 257 ns VR=100V,IF=42.7A,diF/dt=100A/µs
Reverse recovery charge Qrr - 623 - nC VR=100V,IF=42.7A,diF/dt=100A/µs

1)
Diode pulse current is defined by thermal and/or package limits
2)
Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
Final Data Sheet 6 Rev.2.0,2014-02-06
 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
320 70

280 60

240
50

200
40
Ptot[W]

ID[A]
160
30
120

20
80

40 10

0 0
0 50 100 150 200 0 50 100 150 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100

1 µs

10 µs
102
100 µs 0.5
ZthJC[K/W]

1 ms
ID[A]

1 0.2
10 10-1
10 ms
0.1

DC
0.05
0
10
0.02

0.01

single pulse
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
150 30

10 V 4.5 V
125 7V 25

5V
5V 7V
100 20 10 V

RDS(on)[mW]
ID[A]

75 15

50 4.5 V 10

25 5

0 0
0 1 2 3 4 5 0 20 40 60 80 100 120 140
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
180

120
160

100 140

120
80
100
gfs[S]
ID[A]

60 80

60
40

40
20 175 °C
20
25 °C

0 0
0 2 4 6 8 0 25 50 75 100 125
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 8 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
70 4.0

60 3.5

3.0 2700 µA
50

2.5 270 µA
RDS(on)[mW]

40

VGS(th)[V]
2.0
98%
30
1.5
typ
20
1.0

10 0.5

0 0.0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=61A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
4
10 103
Ciss 25 °C
175 °C
25°C, 98%
175°C, 98%

103
Coss
102
C[pF]

IF[A]

102

101
Crss
101

100 100
0 40 80 120 160 0.0 0.5 1.0 1.5 2.0
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 9 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
102 10

8
200 V
25 °C
125 V
100 °C 6

VGS[V]
IAS[A]

125 °C 50 V
101

100 0
100 101 102 103 0 20 40 60 80
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=61Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

290

280

270

260
VBR(DSS)[V]

250

240

230

220
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 10 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

6PackageOutlines

Figure1OutlinePG-TO220-3,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.0,2014-02-06

 OptiMOSTMFDPower-Transistor,250V

IPP220N25NFD

RevisionHistory
IPP220N25NFD

Revision:2014-02-06,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-02-06 Release of final version

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InfineonTechnologiesAG
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©2014InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 12 Rev.2.0,2014-02-06