SKiiP 32 NAB 12 MiniSKIIP 3

SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 32 NAB 12
Inverter 3-phase bridge rectifier +
VCES 1200 V braking chopper +
VGES ± 20 V 3-phase bridge inverter
IC Theatsink = 25 / 80 °C 65 / 45 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 130 / 90 A
IF = –IC Theatsink = 25 / 80 °C 60 / 40 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 120 / 80 A
Case M3
Bridge Rectifier
VRRM 1500 V
ID Theatsink = 80 °C 35 A
IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C 700 A
I2t tp = 10 ms; sin. 180 °, Tj = 25 °C 2400 A2s
Tj – 40 . . . + 150 °C
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V

Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 50 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
td(on) VCC = 600 V; VGE = ± 15 V – 44 100 ns
tr IC = 50 A; Tj = 125 °C – 56 100 ns
td(off) Rgon = Rgoff = 22 Ω – 380 500 ns
tf inductive load – 70 100 ns
Eon + Eoff – 13 – mJ
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 3,3 – nF
Rthjh per IGBT – – 0,5 K/W UL recognized file no. E63532
IGBT - Chopper • specification of temperature
VCEsat IC = 25 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V sensor see part A
td(on) VCC = 600 V; VGE = ± 15 V – 75 150 ns • common characteristics B 16 – 4
tr IC = 25 A; Tj = 125 °C – 65 130 ns
[Link]
td(off) Rgon = Rgoff = 47 Ω – 400 600 ns
tf inductive load – 50 100 ns Options
Eon + Eoff – 6,2 – mJ • also available with powerful
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 1,65 – nF chopper. For characteristics
Rthjh per IGBT – – 1,0 K/W please refer to Inverter IGBT
Diode 2) - Inverter & Chopper
VF = VEC IF = 50 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2,3) V 1)
Theatsink = 25 °C, unless
VTO Tj = 125 °C – 1,0 1,2 V otherwise specified
rT Tj = 125 °C – 16 22 mΩ 2)
CAL = Controlled Axial Lifetime
IRRM IF = 50 A, VR = – 600 V – 40 – A Technology (soft and fast
Qrr diF/dt = – 800 A/µs – 8,0 – µC recovery)
Eoff VGE = 0 V, Tj = 125 °C – 2,0 – mJ
Rthjh per diode – – 1,0 K/W
Diode - Rectifier
VF IF = 35 A, Tj = 25 °C – 1,2 – V
Rthjh per diode – – 1,6 K/W
Temperature Sensor
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2 – 2,5 Nm
Case mechanical outline see page M3
B 16 – 9 [Link]
* For diagrams of the Chopper IGBT please refer to SKiiP 30 NAB 12
© by SEMIKRON 0698 B 16 – 59
[Link]

[Link]
 IC [A] [Link]
100

17V
80
15V

13V

60 11V

9V

40 7V

20

0
0 1 2 3 4 5
VCE [V]
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C

Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = ± 15 V VGE = ± 15 V
RG = 22 Ω IC = 50 A

[Link]

Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
VGE [V] 32NA1205 C [nF] 32NA1206
20 ICpuls = 50 A 100 VGE = 0 V
18 f = 1 MHz
600V 800V

16

14
10
12

10 Ciss

8
1
6
Coss
4

2 Crss

0 0,1
0 100 200 300 400 0 10 20 30 40
QG [nC] VCE [V]
Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE

B 16 – 60 0698 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0

0.8

0.6

0.4

0.2

0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH

8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4

0,5
2
[Link]

0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

B 16 – 4 0698 © by SEMIKRON
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MiniSKiiP 3

SKiiP 30 NAB 06 Circuit