Experiment 5 Lab Manual

American International University- Bangladesh

Department of Electrical and Electronic Engineering
EEE2104: Electronic Devices Laboratory

Title: Study of Transistor Characteristics in Common Emitter Amplifier

Introduction:

A BJT is a three terminal semiconductor device. It is widely used in discrete circuits as well as
in integrated circuits. The main applications of BJTs are analog circuits. For example, BJTs are
used for amplifiers in particular for high speed amplifiers. BJTs can be used for digital circuits
as well, but most of the digital circuits are nowadays realized by field effect transistors (FETs).
There are three operating modes for BJTs, the active mode (amplifying mode), the cut-off mode
and the saturation mode. To apply a BJT as an amplifier, the BJT has to operate in the active
mode. To apply a BJT as a digital circuit element, the BJT has to operate in the cut-off mode
and the saturation mode.

The main objectives of this experiment are to-

1. become familiar with bipolar junction transistors (BJTs)

2. study the biasing of a Common Emitter (CE) Amplifier, and
3. obtain the input and output characteristics of a common-emitter based BJT circuits.

Theory and Methodology:

Device structure of bipolar junction transistors

Each BJT consists of two anti serial connected diodes. The BJT can be either implemented as
an npn or a pnp transistor. In both cases, the center region forms the base (B) of the transistor,
while the external regions form the collector (C) and the emitter (E) of the transistor. External
wire connections to the p and n regions (transistor terminals) are made through metal (e.g.
Aluminum) contacts.
A cross section of the two types of BJTs consisting of an emitter-base junction and a collector-
base junction is shown in the figure below. An npn or a pnp transistors are called bipolar
transistors because both types of carriers (electrons and holes) contribute to the overall current.
In the case of a field effect transistor, either the electronics or the holes determine the current
flow. Therefore a field effect transistor is a unipolar device. The current and voltage
amplification of a BJT is controlled by the geometry of the device (for example width of the
base region) and the doping concentrations in the individual regions of the device. In order to
achieve a high current amplification, the doping concentration in the emitter region is typically
higher than that of the base region. The base is a lightly doped very thin region between the
emitter and the collector and it controls the flow of charge carriers from the emitter to collector
region.

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 Experiment 5 Lab Manual

Circuit Configuration:

The following figures show the symbol for the npn transistor and pnp transistor. The emitter
of the BJT is always marked by an arrow, which indicates whether the transistor is an npn or a
pnp transistor.

npn BJT symbol pnp BJT symbol

There are three basic ways in which a BJT can be configured. In each case, one terminal is
common to both the input and output circuit shown in figure above.

1. The common emitter configuration is used for voltage and current amplification and is
the most common configuration for transistor amplifiers.
2. The common collector configuration often called an emitter follower, since its output
is taken from the emitter resistor. It is useful as an impedance matching device since its
input impedance is much higher than its output impedance.
3. The common base configuration is used for high frequency applications because the
base separates the input and output, minimizing oscillations at high frequency. It has a
high voltage gain, relatively low input impedance and high output impedance compared
to the common collector.

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 Experiment 5 Lab Manual

Biasing of Bipolar Junction Transistors:

In most of the cases, the BJT is used as an amplifier or switch. In order to perform these
functions, the transistor must be correctly biased. Depending on the bias condition (forward or
reverse) of each of the BJT junctions, different modes of operation of the BJT are obtained.
The three mode are defined as follows:
1. Active: Emitter junction is forward biased, collector junction is reverse biased. The BJT
operates in the active mode and the BJT can be used as an amplifier.
2. Saturation: Both the emitter and collector junctions are forward biased. If the BJT is used
as a switch, the saturation mode corresponds to the on state of the BJT.
3. Cut-off: Both the emitter and collector junction are reverse biased. If the BJT is used as a
switch, the cut-off mode corresponds to the off state of the BJT.

Input and Output Characteristics:

The input characteristics curves are plotted between IB and VBE keeping the voltage, VCE,
constant. The input characteristics look like the characteristics of a forward-biased diode. The
base-to-emitter voltage varies only slightly. The input dynamic resistance is calculated from
the ratio of the small change of base-to-emitter voltage to the small change of base current.

Fig: BJT Common Emitter Input Characteristics

The output characteristics curves are plotted between the collector current, IC, and the collector-
to-emitter voltage drop by keeping the base current, IB, constant. These curves are almost
horizontal. The output dynamic resistance again can be calculated from the ratio of the small
change of emitter-to-collector voltage drop to the small change of the collector current.

Fig: BJT Common Emitter Output Characteristics

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 Experiment 5 Lab Manual

Pre-Lab Homework:

You must solve the following questions and prepare a short report on it before the start of the
lab.
Analyze the following common emitter circuit:

1. Design the above common emitter circuit using PSpice simulation tool for 2N2222
transistor.
2. Determine the DC operation point values for VB, VC, VCE, VE, IC, and IB, where VBB =
0, 1, and 2.5 V and VCC = 8 V and 16 V

Apparatus:

1) Trainer Board :
2) Transistor : C828 [ 1pc ]
3) Resistors : 1KΩ [ 1pc ]
10KΩ [ 1pc ]
4) DC Power Supply
5) Multimeter
6) Power Supply Cable : [ 2pc]

Precautions:

Transistors are sensitive to be damaged by electrical overloads, heat, humidity, and radiation.
Damage of this nature often occurs by applying the incorrect polarity voltage to the collector
circuit or excessive voltage to the input circuit. One of the most frequent causes of damage to
a transistor is the electrostatic discharge from the human body when the device is handled. The
applied voltage, current should not exceed the maximum rating of the given transistor.

Experimental Procedure:

Circuit Diagram:

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 Experiment 5 Lab Manual

1. Identify the terminals of the transistor and record the value of Beta.
2. Make the circuit connections as shown in the above figure.
3. For input characteristics first fix the voltage VCE and vary the voltage VBB and calculate
𝑉 −𝑉
the Base current IB using: 𝐼𝐵 = 𝐵𝐵10𝑘 𝐵𝐸
4. For output characteristics, first open the input circuit (i. e. to make IB = 0). Vary the
collector voltage VCC in steps of 4V and calculate the Collector current IC using: 𝐼𝐶 =
𝑉𝐶𝐶 −𝑉𝐶𝐸
1𝑘

5. Now close the input circuit and fix the base current IB at 50μA by varying VBB. Vary
the voltage VCC according to the table and calculate IC in each step. Repeat the process
for other values of IB.
6. Plot the input and output characteristic graphs and locate the Q-point

Data Table:
1. Input Characteristics

VCC = 8V VCC = 16V

VBB VBE IB VBB VBE IB
0v 0v
0.5v 0.5v
1v 1v
1.5v 1.5v
2v 2v
2.5v 2.5v

2. Output Characteristics

IB = 0μA IB = 50μA IB = 100μA

VCC VCE IC VCC VCE IC VCC VCE IC

0v 0v 0v
4v 4v 4v
8v 8v 8v
12v 12v 12v
16v 16v 16v

Simulation and Measurement:

Compare the simulation results with your experimental data/ wave shapes and comment on
the differences (if any).

Questions for report writing:

1) Plot the input {IB vs VBE} and output {IC vs VCE} characteristics as well as {IB vs IC}
curves using Excel.
2) Simulate the circuit and submit simulated tables and graphs to be compared with the
experimental graphs.
© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 5
 Experiment 5 Lab Manual
3) Show all calculations for theoretical values and submit tables and graphs to be
compared with the experimental graphs.
4) Explain the behavior of the input and output characteristics in terms of the three regions
of operation: cutoff, active, saturation.
5) What is the Q-point? Discuss its significance

Discussion and Conclusion:

Interpret the data/findings and determine the extent to which the experiment was successful in
complying with the goal that was initially set. Discuss any mistake you might have made while
conducting the investigation and describe ways the study could have been improved.

Reference(s):

1. Adel S. Sedra, Kennth C. Smith, Microelectronic Circuits, Saunders College

Publishing, 3rd ed., ISBN: 0-03-051648-X, 1991.
2. American International University–Bangladesh (AIUB) Electronic Devices Lab
Manual.
3. David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design,
john Wiley & Sons Canada, Ltd.; ISBN: 0471410160, 2002.

© Dept. of EEE, Faculty of Engineering, American International University-Bangladesh (AIUB) 6