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Emerging Domain in Electronics Engineering Kec 101T 1

This document contains a theory examination question paper for emerging domains in electronics engineering. It has 7 sections with multiple choice and numerical type questions. Section A contains 10 short answer questions related to basic electronics concepts. Section B contains circuit analysis problems. Section C deals with semiconductor device characteristics. Sections D and E are related to transistor and op-amp circuit analysis. Sections F and G contain digital logic and communication system problems. The paper tests knowledge across various core electronics topics through analytical and conceptual questions.

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Dulce De
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0% found this document useful (0 votes)
437 views3 pages

Emerging Domain in Electronics Engineering Kec 101T 1

This document contains a theory examination question paper for emerging domains in electronics engineering. It has 7 sections with multiple choice and numerical type questions. Section A contains 10 short answer questions related to basic electronics concepts. Section B contains circuit analysis problems. Section C deals with semiconductor device characteristics. Sections D and E are related to transistor and op-amp circuit analysis. Sections F and G contain digital logic and communication system problems. The paper tests knowledge across various core electronics topics through analytical and conceptual questions.

Uploaded by

Dulce De
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Subject Code: KEC101T


0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM I) THEORY EXAMINATION 2021-22
EMERGING DOMAIN IN ELECTRONICS ENGINEERING
 
Time: 3 Hours Total Marks: 100
Note: 1. Attempt all Sections. If require any missing data; then choose suitably.

SECTION A

1. Attempt all questions in brief. 2 x 10 = 20


a. Determine , if IE = 5 mA, IC = 4.95 mA.
b. Define transconductance of JFET.
c. What do you mean by CMRR?
d. Differentiate the BJT and JFET.
e. (1010110100.110)2 = ( )16?
f. Differentiate between Avalanche and Zener breakdown.
g. Simplify the Boolean function using Boolean Algebra theorems:
ABC + ABC + ABC + ABC
h. Differentiate between Microprocessor and Microcontroller.
i. What is Doping? What is the need of Doping?

1
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j. What is RADAR? Write down two applications of RADAR.
29

2.
2_

24
SECTION B
2P

5.
2. Attempt any three of the following: 10 x 3 = 30

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P2

a. What do mean by clipper? Draw the output waveform of the given circuit.
17
Q

|1
5
:5
: 59
08
2
02

b. Draw the Structure of Depletion type N-MOSFET. Explain its operation with
characteristic graph.
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c. i) Subtract using 10’s complement: (9754)10 – (364)10


ar

ii) Subtract using 1’s complement: (10111)2 – (110011)2


M

d. Describe AM modulation and Demodulation technique with adequate diagram.


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e. Write down the characteristics of ideal OP-AMP. Derive the expression for
|2

gain of OP-AMP as non-inverting amplifier.

SECTION C
3. Attempt any one part of the following: 10 x 1 = 10
(a) Define Voltage Multiplier. Draw the circuit and explain the working of voltage
Tripler and Quadrupler circuit.
(b) Draw the V-I charateristics of zener diode. Determine the network of figure
given below, determine the range of Vin that will maintain VL at 8V and not

QP22P2_290 | 25-Mar-2022 08:59:55 | 117.55.242.131


Printed Page: 2 of 3 
Subject Code: KEC101T
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM I) THEORY EXAMINATION 2021-22
EMERGING DOMAIN IN ELECTRONICS ENGINEERING
 
exceeded the maximum power rating of the Zener diode.
.

4. Attempt any one part of the following: 10 x 1 = 10


(a) Describe the construction and working of a NPN transistor in CE configuration
with respect to size and doping. Also, draw the input and output characteristic
graph.
(b) Define α and β with respect to BJT and derive the relationship between them.

1
A transistor having  = 0.975 and reverse saturation current ICBO= 10A is

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0
operated in CE mode. If the base current is 250A. Calculate IE and IC.
29

2.
2_

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5. Attempt any one part of the following: 10 x 1 = 10
2P

5.
(a) (i) Draw and explain the working of Integrator and Differentiator using OP-

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AMP. 17
(ii) Write Short note on basic elements of communication system.
Q

(b) (i) Determine the output voltage of an OPAMP for the input voltage of
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V1=150µV and V2=140µV. The amplifier has differential gain Ad=4000 and
5

CMRR is 100.
:5

(ii) Determine the output of the following circuit.


59

Given V1=V2=0.15V
:
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2
02
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6. Attempt any one part of the following: 10 x 1 = 10


(a) i) Describe briefly Satellite Communication.
ii) Explain Positive and Negative Clamper using suitable circuit diagram and
input/output waveform.
(b)  An audio frequency signal 5Sin(2500t) is used to amplitude modulate a
carrier of 25Sin(2105t). Calculate:
(i) Modulation index
(ii) Amplitude of Each side band

QP22P2_290 | 25-Mar-2022 08:59:55 | 117.55.242.131


Printed Page: 3 of 3 
Subject Code: KEC101T
0Roll No: 0 0 0 0 0 0 0 0 0 0 0 0 0

BTECH
(SEM I) THEORY EXAMINATION 2021-22
EMERGING DOMAIN IN ELECTRONICS ENGINEERING
 
(iii) Total power
(iv) Bandwidth
(v) Transmission efficiency

7. Attempt any one part of the following: 10 x 1 = 10


(a) Minimize using K-map and realize using NOR gates only. F (A, B, C, D) = ΠM
(3, 4, 5, 7, 9, 13, 14, 15). d(0, 2, 8).
(b) F (A, B, C, D, E) = Σm (0,1,2,4,5,6,10,13,14,18,21,22,24,26,29,30). Simplify
the function with help of K-map and realize the simplified function using basic
logic gates.
 

1
13
0
29

2.
2_

24
2P

5.
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P2

17
Q

|1
5
:5
: 59
08
2
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-2
ar
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QP22P2_290 | 25-Mar-2022 08:59:55 | 117.55.242.131

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