BCX 68
NPN Silicon AF Transistors
1
• For general AF applications
2
• High collector current
3
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX 69 (PNP) 2
VPS05162
Type Marking Pin Configuration Package
BCX 68 CA 1=B 2=C 3=E SOT-89
BCX 68-10 CB 1=B 2=C 3=E SOT-89
BCX 68-16 CC 1=B 2=C 3=E SOT-89
BCX 68-25 CD 1=B 2=C 3=E SOT-89
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
DC collector current IC 1 A
Peak collector current ICM 2
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TS = 130 °C Ptot 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Junction ambient 1) RthJA ≤75 K/W
Junction - soldering point RthJS ≤20
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
1 Sep-30-1999
BCX 68
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage V(BR)CEO 20 - - V
IC = 30 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 25 - -
IC = 10 µA, IB = 0
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 1 µA, IC = 0
Collector cutoff current ICBO - - 100 nA
VCB = 25 V, IE = 0
Collector cutoff current ICBO - - 100 µA
VCB = 25 V, IE = 0 , TA = 150 °C
DC current gain 1) hFE 50 - - -
IC = 5 mA, VCE = 10 V
DC current gain 1) hFE -
IC = 500 mA, VCE = 1 V BCX 68 85 - 375
BCX 68-10 85 100 160
BCX 68-16 100 160 250
BCX 68-25 160 250 375
DC current gain 1) hFE 60 - -
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1) VCEsat - - 0.5 V
IC = 1 A, IB = 100 mA
Base-emitter voltage 1) VBE(ON)
IC = 5 mA, VCE = 10 V - 0.6 -
IC = 1 A, VCE = 1 V - - 1
AC Characteristics
Transition frequency fT - 100 - MHz
IC = 100 mA, VCE = 5 V, f = 20 MHz
1) Pulse test: t ≤ 300µs, D = 2%
2 Sep-30-1999
BCX 68
Total power dissipation Ptot = f (TA*;TS ) Collector current I C = f (VBE)
* Package mounted on epoxy VCE = 1V
BCX 68 EHP00460 BCX 68 EHP00461
1.2 10 4
W mA
Ptot
1.0 ΙC
10 3
0.8 5
100 ˚C
25 ˚C
TA TS -50 ˚C
0.6 10 2
5
0.4
1
10
0.2 5
0.0 10 0
0 50 100 ˚C 150 0 0.2 0.4 0.6 0.8 1.0 V 1.2
TA ; TS VBE
Permissible pulse load Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp ) VCE = 5V
BCX 68 EHP00462 BCX 68 EHP00463
10 3 10 3
Ptot max tp MHz
5 tp
Ptot DC D= 5
T fT
T
10 2 D=
0
0.005
5 0.01
0.02 10 2
0.05
0.1
0.2
10 1 0.5 5
10 0 10 1
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 5 10 1 5 10 2 mA 10 3
tp ΙC
3 Sep-30-1999
BCX 68
DC current gain hFE = f (IC ) Collector-emitter saturation voltage
VCE = 1V IC = f (VCEsat), h FE = 10
BCX 68 EHP00464
10 3 10
4 BCX 68 EHP00465
mA
5
h FE ΙC
100 ˚C
3
10
25 ˚C
10 2 5
-50 ˚C
100 ˚C
5 25 ˚C
2 -50 ˚C
10
5
10 1
1
10
5
5
0
10 0 10
0 0.2 0.4 0.6 V 0.8
10 0 5 10 1 5 10 2 5 10 3 mA 10 4
ΙC VCE sat
Collector cutoff current ICBO = f (TA) Base-emitter saturation voltage
VCB = 25V IC = f (VBEsat), hFE = 10
BCX 68 EHP00466 BCX 68 EHP00467
10 5 10 4
nA mA
Ι CB0 max ΙC
10 4
5 10 3
5
100 ˚C
3 25 ˚C
10
-50 ˚C
5
10 2
typ 5
10 2
5
1
1
10
10
5
5
10 0 10 0
0 50 100 ˚C 150 0 0.2 0.4 0.6 0.8 1.0 V 1.2
TA VBE sat
4 Sep-30-1999
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