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Power Transistors

2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
Unit: mm
■ Features
● High forward current transfer ratio hFE which has satisfactory linearity
5.0±0.1
● Low collector to emitter saturation voltage VCE(sat)
10.0±0.2 1.0
● Allowing automatic insertion with radial taping

4.2±0.2
■ Absolute Maximum Ratings

13.0±0.2
90°
(TC=25˚C)

2.5±0.2
Parameter Symbol Ratings Unit
1.2±0.1 C1.0
Collector to 2SB1417 –60 2.25±0.2
VCBO V 0.65±0.1
base voltage 2SB1417A –80

Solder Dip
18.0±0.5
0.35±0.1 1.05±0.1

Collector to 2SB1417 –60 0.55±0.1

VCEO V 0.55±0.1
emitter voltage 2SB1417A –80
Emitter to base voltage VEBO –6 V
C1.0 1 2 3
Peak collector current ICP –5 A
Collector current IC –3 A
2.5±0.2 2.5±0.2
Collector power TC=25°C 15 1:Base
PC W 2:Collector
dissipation Ta=25°C 2.0 3:Emitter
Junction temperature Tj 150 ˚C MT4 Type Package

Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SB1417 VCE = –60V, VBE = 0 –100
ICES µA
current 2SB1417A VCE = –80V, VBE = 0 –100
Collector cutoff 2SB1417 VCE = –30V, IB = 0 –100
ICEO µA
current 2SB1417A VCE = –60V, IB = 0 –100
Emitter cutoff current IEBO VEB = –6V, IC = 0 –100 µA
Collector to emitter 2SB1417 –60
VCEO IC = –30mA, IB = 0 V
voltage 2SB1417A –80
hFE1* VCE = –4V, IC = –1A 70 250
Forward current transfer ratio
hFE2 VCE = –4V, IC = –3A 10
Base to emitter voltage VBE VCE = –4V, IC = –3A –1.8 V
Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A –1.2 V
Transition frequency fT VCE = –5V, IC = – 0.2A, f = 10MHz 30 MHz
Turn-on time ton 0.3 µs
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
Storage time tstg 1.0 µs
VCC = –50V
Fall time tf 0.2 µs

*h Rank classification
FE1

Rank Q P
hFE1 70 to 150 120 to 250

Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification.

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Power Transistors 2SB1417, 2SB1417A

PC — Ta IC — VCE VCE(sat) — IC
20 –6 –100

Collector to emitter saturation voltage VCE(sat) (V)

TC=25˚C IC/IB=8
(1) TC=Ta
Collector power dissipation PC (W)

(2) Without heat sink –30

(PC=2.0W) –5
IB=–100mA –90mA

Collector current IC (A)

15 –80mA –10
–70mA
–4
–60mA
–3
–50mA
–40mA
10 –3 –1
(1) –30mA
TC=–25˚C
–20mA – 0.3
–2 100˚C
5 – 0.1
–10mA
–1 25˚C
– 0.03
(2)

0 0 – 0.01
0 20 40 60 80 100 120 140 160 0 –2 –4 –6 –8 –10 –12 – 0.1 – 0.3 –1 –3 –10 –30 –100
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A)

IC — VBE hFE — IC fT — IC
–6 100000 10000
VCE=–4V VCE=–4V VCE=–5V
f=10MHz
Forward current transfer ratio hFE

30000 3000 TC=25˚C

Transition frequency fT (MHz)

–5
Collector current IC (A)

10000 1000

–4
3000 300
TC=100˚C
–3 1000 100

25˚C
300 TC=100˚C 30
–2
25˚C
100 –25˚C 10

–1
–25˚C 30 3

0 10 1
0 – 0.4 – 0.8 –1.2 –1.6 –2.0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Base to emitter voltage VBE (V) Collector current IC (A) Collector current IC (A)

Cob — VCB ton, tstg, tf — IC Area of safe operation (ASO)

1000 100 –100
IE=0 Pulsed tw=1ms Non repetitive pulse
Collector output capacitance Cob (pF)

f=1MHz Duty cycle=1% TC=25˚C

TC=25˚C 30 IC/IB=5 –30
300
Switching time ton,tstg,tf (µs)

(IB1=–IB2)
Collector current IC (A)

10 VCC=–200V –10
TC=25˚C ICP
100
3 –3
IC t=1ms
tstg 10ms
30 1 –1

DC
0.3 ton – 0.3
10

0.1 – 0.1
tf
2SB1417A
2SB1417

3
0.03 – 0.03

1 0.01 – 0.01
–1 –3 –10 –30 –100 0 –1 –2 –3 –4 –1 –3 –10 –30 –100 –300 –1000
Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V)

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Power Transistors 2SB1417, 2SB1417A

Rth(t) — t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) Without heat sink
Thermal resistance Rth(t) (˚C/W)

(2) With a 50 × 50 × 2mm Al heat sink

1000

100 (1)

(2)

10

0.1
10–4 10–3 10–2 10–1 1 10 102 103 104
Time t (s)