Advanced Power

Electronics Corp. AP5521GM-HF-3

Complementary N and P-channel
Enhancement-mode Power MOSFETs
Simple Drive Requirement
D2
Low Gate Charge D2 N-CH BV DSS 100V
D1
D1
Fast Switching Performance RDS(ON) 150mΩ
RoHS-compliant, halogen-free S2
G2 ID 2.5A
G1
SO-8 S1 P-CH BVDSS -100V
RDS(ON) 160mΩ
Description ID -2.5A

Advanced Power MOSFETs from APEC provide the designer with the best D1 D2
combination of fast switching, low on-resistance and cost-effectiveness.
The AP5521GM-HF-3 is in a standard SO-8 package, which is widely
used for commercial and industrial surface-mount applications, and is G1 G2
well suited for applications such as DC and servo motor drives.
S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 100 -100 V
VGS Gate-Source Voltage ±20 ±20 V
3
ID at TA=25°C Continuous Drain Current 2.5 -2.5 A
3
ID at TA=70°C Continuous Drain Current 2.0 -2,0 A
1
IDM Pulsed Drain Current 10 -10 A
PD at TA=25°C Total Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 °C/W

Ordering Information
AP5521GM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
N-channel Electrical Specifications at Tj=25°C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 100 - - V
VGS=10V, ID=2A - 120 150 mΩ
RDS(ON) Static Drain-Source On-Resistance2
VGS=5V, ID=1A - 145 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.4 3 V
gfs Forward Transconductance VDS=10V, ID=2A - 3.3 - S
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA
2
Qg Total Gate Charge ID=2A - 6 10 nC
Qgs Gate-Source Charge VDS=50V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3 - nC
2
td(on) Turn-on Delay Time VDS=50V - 4.5 - ns
tr Rise Time ID=1A - 6.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 16 - ns
tf Fall Time VGS=10V - 5.5 - ns
Ciss Input Capacitance VGS=0V - 420 670 pF
Coss Output Capacitance VDS=15V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=1.5A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=2A, VGS=0V - 35 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 50 - nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA 2/8

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
P-channel Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -100 - - V
VGS=-10V, ID=-2A - 125 160 mΩ
RDS(ON) Static Drain-Source On-Resistance2
VGS=-5V, ID=-1A - 145 250 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -2 -3 V
gfs Forward Transconductance VDS=-10V, ID=-2A - 8 - S
IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=±20V, VDS=0V - - ±100 nA
2
Qg Total Gate Charge ID=-2A - 14 22.5 nC
Qgs Gate-Source Charge VDS=-50V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC
2
td(on) Turn-on Delay Time VDS=-50V - 10 - ns
tr Rise Time ID=-1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 50 - ns
tf Fall Time VGS=-10V - 21 - ns
Ciss Input Capacitance VGS=0V - 1400 2240 pF
Coss Output Capacitance VDS=-15V - 135 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-1.5A, VGS=0V - - -1.3 V
2
trr Reverse Recovery Time IS=-2A, VGS=0V - 40 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 80 - nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse width <300us, duty cycle < 2%.
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec; 135°C/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

©2010 Advanced Power Electronics Corp. USA 3/8

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
Typical N-channel Electrical Characteristics
20 16

T A =25° C 10V T A =150 ° C 10V

7.0V 7.0V
16
6.0V 6.0V
5.0V

ID , Drain Current (A)

ID , Drain Current (A)

12

5.0V V G =4.0V
12

8
V G = 4.0V

4
4

0 0
0 2 4 6 8 0 2 4 6 8 10

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

180 2.6

I D = 1A I D =2A
o V G =10V
T A = 25 C 2.2

160
RDS(ON0 (mΩ )

Normalized R DS(ON)

1.8

140 1.4

1.0

120

0.6

100 0.2
2 4 6 8 10 -50 0 50 100 150

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance
vs. Junction Temperature
8 1.4

1.2

6
Normalized VGS(th) (V)

T j =150 o C T j =25 o C
1.0
IS(A)

0.8

0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) o

T j , Junction Temperature ( C)
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
Typical N-channel Electrical Characteristics (cont.)
10 600
f=1.0MHz
ID=2A
V DS = 50 V
VGS , Gate to Source Voltage (V)

500
8

400
C iss

C (pF)
6

300

200

2
100

C oss
C rss
0 0
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (R thja)

0.2
10

Operation in this
100us 0.1 0.1
ID (A)

area limited by
RDS(ON) 0.05

1
1ms 0.02

0.01
PDM
10ms 0.01 t
Single Pulse
T
0.1
100ms Duty factor = t/T
o
T A =25 C Peak Tj = PDM x Rthja + Ta
Rthja=135°C/W
Single Pulse 1s
0.01 DC 0.001
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%

QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf
Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
Typical P-channel Electrical Characteristics
20 12

T A =25 o C -10V T A = 150 o C -10V

-8.0V -8.0V
16
-7.0V 10
-7.0V
-6.0V -6.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

V G = - 5.0V 8
V G = - 5.0V
12

4
2

0 0
0 2 4 6 8 0 2 4 6 8

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

160 2.2

I D = -1 A I D = -2 A
T A =25 o C V G = - 10V
1.8
Normalized R DS(ON)

150
RDS(ON) (mΩ )

1.4

140

1.0

130
0.6

120 0.2
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
8 1.6

1.4
Normalized -VGS(th) (V)

1.2
-IS(A)

4 1.0

T j =150 o C T j =25 o C
0.8

0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
Typical P-channel Electrical Characteristics (cont.)
10
f=1.0MHz
2000

I D = -2A
V DS = -50V
-VGS , Gate to Source Voltage (V)

8 1600

C iss

C (pF)
6 1200

4 800

2 400

C oss
0 0 C rss
0.0 8.0 16.0 24.0 32.0 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (R thja)

0.2
10

0.1
0.1
Operation in this
area limited by 100us
RDS(ON) 0.05
1ms
-ID (A)

1
0.02

0.01
10ms PDM
0.01 t
Single Pulse
T
0.1
100ms
o Duty factor = t/T
T A =25 C Peak Tj = PDM x Rthja + Ta

Single Pulse 1s Rthja=135°C/W

DC
0.01 0.001
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V
QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP5521GM-HF-3
Package Dimensions: SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27
e 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L θ

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.
c

DETAIL A

Marking Information:

Product: AP5521
Package:
5521GM GM = RoHS-compliant halogen-free SO-8

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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