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Vlsi Process Technology

This document provides an overview of a course on VLSI process technology. The course aims to introduce fundamentals of MOS and CMOS fabrication processes. It covers topics like crystal growth, wafer preparation, lithography methods, deposition processes, ion implantation, and metallization. Students will analyze fabrication of NMOS, CMOS memory and bipolar devices. They will also understand nuances of assembly and packaging of VLSI devices. The course is divided into 5 units covering areas like electron grade silicon, lithography, deposition processes, ion implantation and metallization, and analytical and assembly techniques.

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80 views

Vlsi Process Technology

This document provides an overview of a course on VLSI process technology. The course aims to introduce fundamentals of MOS and CMOS fabrication processes. It covers topics like crystal growth, wafer preparation, lithography methods, deposition processes, ion implantation, and metallization. Students will analyze fabrication of NMOS, CMOS memory and bipolar devices. They will also understand nuances of assembly and packaging of VLSI devices. The course is divided into 5 units covering areas like electron grade silicon, lithography, deposition processes, ion implantation and metallization, and analytical and assembly techniques.

Uploaded by

shivaspy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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VLSI PROCESS TECHNOLOGY

PROFESSIONAL ELECTIVES IV
Course Code Category Hours / Week Credits Maximum Marks
L T P C CIA SEE Tota
17CD04209 Core
4 0 - 4 40 60 100
l
Contact Classes: Tutorial Classes: Nil Practical Classes: Nil Total Classes: 60
OBJECTIVES:
60
 To introduce the fundamentals of multi rate signal processing and cognitive
Radio.
 To provide rigorous foundation in MOS and CMOS fabrication process.
OUTCOMES:
 Able to understand various techniques involved in the VLSI fabrication process.
 Able to understand the different lithography methods and etching process
 Analyze the deposition and diffusion mechanisms.
 Analyze the fabrication of NMOS, CMOS memory and bipolar devices
 Understand the nuances of assembly and packaging of VLSI devices.
UNIT - I ELECTRON GRADE SILICON Classes: 15
Crystal growth. Wafer preparation. Vapour phase and molecular beam epitaxy. SOI. Epitaxial
evaluation. Oxidation techniques, systems and properties. Oxidation defects. Ch 1, 2, 3
UNIT - II LITHOGRAPHY Classes: 10
Optical, electron, X-ray and ion lithography methods. Plasma properties, size, control, etch
mechanism, etch techniques and equipments ch 4, 5
UNIT - III DEPOSITION PROCESS AND METHODS Classes: 10
Diffusion in solids. Diffusion equation and diffusion mechanisms ch 7
UNIT-IV ION IMPLANTATION AND METALLIZATION Classes: 15
Process simulation of ion implementation, diffusion, oxidation, epitaxy, lithography, etching and
deposition. NMOS, CMOS, MOS memory and bipolar IC technologies. IC fabrication ch 10, 11
UNIT-V ANALYTICAL AND ASSEMBLY TECHNIQUES Classes: 10
Packaging of VLSI devices ch 13
Text Books:
1. S.M.Sze, “VLSI Technology (2/e)” , McGraw Hill, 1988
Reference Books:
1. W. Wolf, “Modern VLSI Design”, (3/e), Pearson,2002

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